論文

• "Mokh Hadi", "Shinichi Kano", "Kuniyuki Kakushima", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer, Semiconductor Science and Technology, Vol. 29, No. 11, Oct. 2014.
• "Y. Wu", "H. Hasegawa", "K. Kakushima", "K. Ohmori", "T. Watanabe", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "Y. Kataoka", "K. Natori", "K. Yamada", "H. Iwai". A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability, Microelectronics Reliability, Vol. 54, No. 5, pp. 899-904, May 2014.
• "Yusuke Takei", "Mari Okamoto", "Wataru Saito", "Kazuo Tsutsui", "Kuniyuki Kakushima", "Hitoshi Wakabayashi", "Yoshinori Kataoka", "Hiroshi Iwai". Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, ECS Transactions, Vol. 61, No. 4, pp. 265-270, May 2014.
• "Chunmeng Dou", "Tomoya Shoji", "Kazuhiro Nakajima", "Kuniyuki Kakushima", "Parhat Ahmet", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, pp. 725-729, Apr. 2014.
• "T. Kawanago", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT, IEEE Transaction on Electron Devices(T-ED), Vol. 61, No. 3, pp. 785-791, Feb. 2014.
• "K. Tuokedaerhan", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain, Applied Physics Letters (APL), Vol. 104, No. 2, Jan. 2014.
• Tuokedaerhan, K., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Hitoshi Wakabayashi, Tsutsui, K., Natori, K., Iwai, H.. Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain, Applied Physics Letters, Vol. 104, No. 2, 2014.
• Dou, C., Shoji, T., Nakajima, K., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Hitoshi Wakabayashi, Tsutsui, K., Natori, K., Iwai, H.. Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, No. 4, pp. 725-729, 2014.
• Hadi, M.S., Kano, S., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Hitoshi Wakabayashi, Tsutsui, K., Natori, K., Iwai, H.. A resistive switching device based on breakdown and anodic reoxidization of thin SiO2on Si-based electrodes using CeOxbuffer layer, Semiconductor Science and Technology, Vol. 29, No. 11, 2014.

国際会議発表 (査読有り)

• M. Okamoto, K. Kakushima, Y. Kataoka, K. Natori, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure, WiPDA, Oct. 2014.
• T. Shoji, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells, 29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014), Sept. 2014.
• Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai. Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, The International Workshop on Nitride Semiconductors (IWN2014), Aug. 2014.
• Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai. Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, 225th ECS Meeting, May 2014.
• T. Ohashi, H. Wakabayashi, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes, China Semiconductor Technology International Conference (CSTIC) 2014, 2014.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, Hitoshi Wakabayashi. Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs, International Conference on Solid State Devices and Materials, Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, 1074, 2014.
• T. Ohashi, S. Yamaguchi, K. Matsuura, H. Wakabayashi. Sputtered MoS2 Film for Future High-Performance Nanoelectronic Devices, The 7th Thailand-Japan International Academic Conference, Material Engineering and Technology, 2014.
• Okamoto, M., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Hitoshi Wakabayashi, Tsutsui, K., Iwai, H., Saito, W.. Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, pp. 94-97, 2014.
• Munekiyo, S., Lei, Y.M., Natori, K., Iwai, H., Kawanago, T., Kakushima, K., Kataoka, K., Nishiyama, A., Sugii, N., Hitoshi Wakabayashi, Tsutsui, K., Furuhashi, M., Miura, N., Yamakawa, S.. Passivation of SiO2/SiC interface with La2O3capped oxidation, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, pp. 114-116, 2014.
• Hitoshi Wakabayashi. Progress and benchmarking of CMOS-device technologies, 2014 International Conference on Electronics Packaging, ICEP 2014, pp. 434-437, 2014.
• Lei, Y.M., Munekiyo, S., Kawanago, T., Kakushima, K., Kataoka, K., Hitoshi Wakabayashi, Tsutsui, K., Natori, K., Iwai, H., Furuhashi, M., Miura, N.. Enhanced oxidation of sic substrates using La2O3capped annealing and a proposal for uniform LaSiON gate dielectric formation, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, pp. 110-113, 2014.
• Akira Nakajima, Sin-ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors, The 26th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2014), 2014.
• DARYOUSH ZADEH, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction, IEDM 2013, 2014.

国際会議発表 (査読なし・不明)

• Y. Ito, H. Hori, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y.Kataoka, A.Nishiyama, N. Sugii, K. Natori, H. Iwai. Proposal of junction formation process for solar cells made of silicon microstructures, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Kamiya, Y. Takei, W. Saito, K. Kakushima, H. Wakabayashi, Y. Kataoka, K. Tsutsui, H. Iwai. Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• T. Kato, T.Inamura, A.Sasaki, K.Aoki, K.Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Thickness-dependent electrical characterization of β‐FeSi2, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Minjae Yoon, K. Terayama, A. Nakajima, S. Nichizawa, H. Ohasi, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai. Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Motoki, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama, Feb. 2014.
• H. Hasegawa, Y.Wu, J.Song, K. Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Y. Nakamura, K. Kakushima, Y. Kataoka, A. Nishiyama, H. Wakabayashi, N. Sugii, K. Tsutsui, K. Natori, H. Iwai. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics: WIMNACT, Feb. 2014.
• M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• K. Terayama, A. Nakajima, S. Nishizawa, H. Ohasi, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai. Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 雷 一鳴, Shu Munekiyo, Kuniyuki KAKUSHIMA, Takamasa Kawanago, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, M. Furuhashi, N. Miura, S. Yamakawa. Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Takafumi Katou, Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristic of b-FeSi2, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yoshihiro Matsukawa, Mari Okamoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yusuke Takei, Mari Okamoto, S. Man, Ryosuke Kayanuma, Masayuki Kamiya, 齋藤渉, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT, 2014.
• Masayuki Kamiya, Yusuke Takei, 齋藤渉, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yuuma Itou, Hayato Hori, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Schottky barrier height reduction process for silicide/Si interfaces, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroaki Yonezawa, Rei Kayanuma, 中島 昭, 西澤伸一, 大橋弘通, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, HIROSHI IWAI. AlGaN/GaN-based p-channel HFETs with wide-operating temperature, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Kazuma Terayama, 中島 昭, 西澤伸一, 大橋弘通, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. Caluculation of ultimate on-resistance in GaN lateral HFETs using device simulation, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Sin Man, Rei Kayanuma, Yusuke Takei, T. Takahashi, M. Shimizu, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hayato Hori, Yuuma Itou, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Effects of substrate back bias on solar cells formed on thin SOI structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Takumi Ohashi, Hitoshi Wakabayashi, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, KAZUO TSUTSUI, HIROSHI IWAI. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 中島 昭, Hiroaki Yonezawa, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, 西澤伸一, 大橋弘通, Hitoshi Wakabayashi, HIROSHI IWAI. One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors, The 26th International Symposium on Power Semiconductor Devices and ICs(ISPSD 2014), 2014.
• Mari Okamoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiS, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, 大毛利健治, T. Watanabe, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, Keisaku Yamada, HIROSHI IWAI. Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-, 2014.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• unknown unknown, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, HIROSHI IWAI. Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• wei li, 佐々木亮人, 大図秀行, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Jiangning Chen, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, 齋藤渉. Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Taichi Inamura, Takafumi Katou, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on silicide semiconductors for high efficiency thin film photovoltaic devices, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, Akira Nishiyama, Nobuyuki Sugii, 片岡好則, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Effect of pretreatment for high-/k//InGaAs interface property, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 関拓也, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111), The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kenji Natori, takeo hattori, HIROSHI IWAI. Atomically flat interface of La-silicate/Si with W2C gate electrodes, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 吉原亮, Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Interface control process toward un-pinned metal/germanium Schottky contact, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films, J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Hiroaki Imamura, Taichi Inamura, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Tomoya Shoji, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Hitoshi Wakabayashi, Nobuyuki Sugii, HIROSHI IWAI. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroki Hasegawa, Y. Wu, 宋 禛漢, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.

国内会議発表 (査読なし・不明)

• Chunmeng Dou, Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 立体Si構造における局所的な界面準位密度の抽出, ゲートスタック研究会 ―材料・プロセス・評価の物理―（第19回研究会）, 2014.
• ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 大嶺洋, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現, 第61回応用物理学会春季学術講演会, 2014.
• Tuokedaerhan Kamale, Shuhei Hosoda, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. W2Cゲート電極によるLa-silicate MOSFETの移動度改善, 第61回応用物理学会春季学術講演会, 2014.
• 呉研, 長谷川明紀, 角嶋邦之, 渡辺 孝信, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性, 第61回応用物理学会春季学術講演会, 2014.
• 陳江寧, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性, 第61回応用物理学会春季学術講演会, 2014.
• LiWei, 佐々木亮人, 大図 秀行, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 単斜晶WO3薄膜抵抗率の熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• 稲村太一, 嘉藤貴史, 佐々木亮人, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. β-FeSi2の抵抗率熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響, 第61回応用物理学会春季学術講演会, 2014.
• 関拓也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現, 第61回応用物理学会春季学術講演会, 2014.
• 吉原亮, 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子, 第61回応用物理学会春季学術講演会, 2014.
• 今村浩章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価, 第61回応用物理学会春季学術講演会, 2014.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 大橋弘通, 岩井洋, 齋藤渉. TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Siナノワイヤー曲面における保護膜界面準位密度の研究, 第61回応用物理学会春季学術講演会, 2014.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価, 第61回応用物理学会春季学術講演会, 2014.
• 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係, 第61回応用物理学会春季学術講演会（2014年3月17日～3月20日）, 2014.
• 譚錫昊, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 劉 璞誠, 竇春萌, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 雷 一鳴, 宗清修, 角嶋邦之, 川那子高暢, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 古橋 壮之, 三浦 成久, 山川 聡. ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析, 第61回応用物理学会春季学術講演会, 2014.
• Yoon Minjae, 寺山一真, 中島 昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋. デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証, 第61回応用物理学会春季学術講演会, 2014.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性, 第61回応用物理学会春季学術講演会, 2014.
• 武井優典, 岡本真里, マンシン, 萱沼怜, 神谷真行, 齋藤渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性, 第61回応用物理学会春季学術講演会, 2014.
• 堀隼人, 伊藤勇磨, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 薄膜SOI太陽電池の発電特性への基板バイアス効果, 第61回応用物理学会春季学術講演会, 2014.
• 米澤宏昭, 萱沼怜, 中島 昭, 西澤伸一, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋. 広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET, 第61回応用物理学会春季学術講演会, 2014.
• 伊藤勇磨, 堀隼人, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 微細Si構造を利用した太陽電池に適した接合プロセスの提案, 第61回応用物理学会春季学術講演会, 2014.
• 神谷真行, 武井優典, 齋藤渉, 角嶋邦之, 若林整, 片岡好則, 筒井一生, 岩井洋. AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 伊藤勇磨, 堀隼人, 宮澤遼太, 嘉藤貴史, 角嶋邦之, 若林整, 筒井一生, 片岡好則, 岩井洋. Surface States, Potential and Interface Control for Si Nanowire PV, 文部科学省「革新的エネルギー研究開発拠点形成事業」第2回国際シンポジウム ナノワイヤー太陽電池 ～最先端の太陽電池研究で福島復興へ～, 2014.
• 寺山一真, 中島 昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋. デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算, 第61回応用物理学会春季学術講演会, 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.

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