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星井拓也 2012年 研究業績一覧 (4件 / 204件)
論文
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Takuya Hoshii,
Sunghoon Lee,
Rena Suzuki,
Noriyuki Taoka,
Masafumi Yokoyama,
Hishashi Yamada,
Masahiko Hata,
Tetsuji Yasuda,
Mitsuru Takenaka,
Shinichi Takagi.
Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation,
Journal of Applied Physics,
Vol. 112,
No. 7,
pp. 073702,
Oct. 2012.
公式リンク
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Rena Suzuki,
Noriyuki Taoka,
Masafumi Yokoyama,
Sang-Hyeon Kim,
Takuya Hoshii,
Tatsuro Maeda,
Tetsuji Yasuda,
Osamu Ichikawa,
Noboru Fukuhara,
Masahiko Hata,
Mitsuru Takenaka,
Shinichi Takagi.
Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties,
Journal of Applied Physics,
Vol. 112,
No. 8,
pp. 084103,
Oct. 2012.
公式リンク
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Wipakorn Jevasuwan,
Yuji Urabe,
Tatsuro Maeda,
Noriyuki Miyata,
Tetsuji Yasuda,
Akihiro Ohtake,
Hisashi Yamada,
Masahiko Hata,
Sunghoon Lee,
Takuya Hoshii,
Mitsuru Takenaka,
Shinichi Takagi.
Controlling Anion Composition at Metal-Insulator-Semiconductor Interfaces on III-V Channels by Plasma Processing,
Japanese Journal of Applied Physics,
Vol. 51,
No. 6 PART 1,
pp. 065701,
May 2012.
公式リンク
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R. Suzuki,
N. Taoka,
M. Yokoyama,
S. Lee,
S. H. Kim,
T. Hoshii,
T. Yasuda,
W. Jevasuwan,
T. Maeda,
O. Ichikawa,
N. Fukuhara,
M. Hata,
M. Takenaka,
S. Takagi.
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density,
Applied Physics Letters,
Vol. 100,
No. 13,
pp. 132906,
2012.
公式リンク 公式リンク
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