論文

• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination, Applied Physics Express, Dec. 2022.  公式リンク  
  
• Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact, IEEE Journal of the Electron Devices Society, IEEE, Vol. 11, p. 15-21, Nov. 2022.  公式リンク  
  
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics, Aug. 2022.  公式リンク  
  
• Ryota Shibukawa, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films, Japanese Journal of Applied Physics, Vol. 61, No. SH, pp. SH1003, July 2022.  公式リンク  
  
• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, July 2022.  公式リンク  
  
• Atsuki Miyata, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima, Takuya Hoshii. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure, Japanese Journal of Applied Physics, July 2022.  公式リンク  
  
• Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, Volume 61, June 2022.
• M. Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, Yoshiaki Daigo, Ichiro Mizushima, T. Yoda, K. Kakushima. Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate, Japanese Journal of Applied Physics, Vol. 61, SH1011, June 2022.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP), Vol. 61, May 2022.
• Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics, Vol. 61, No. SC, pp. SC1004, May 2022.  公式リンク  
  
• Atsuki Miyata, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure, Japanese Journal of Applied Physics, 61, SH, SH1005, Apr. 2022.
• Ryota Shibukawa, Sung Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films, Japanese Journal of Applied Physics, Volume 61, Apr. 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics (JJAP), Vol. 61, No. 2, Feb. 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics, Feb. 2022.  公式リンク  
  
• Takamasa KAWANAGO, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya HOSHII, Kuniyuki Kakushima, Kazuo TSUTSUI, Hitoshi WAKABAYASHI. Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.

国際会議発表 (査読有り)

• Shonosuke Kimura, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma, the International Workshop on Nitride Semiconductors 2022, Oct. 2022.

国内会議発表 (査読なし・不明)

• 水谷 一翔, 星井 拓也, 川那子 高暢, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 阿野 響太郎, 星井 拓也, 若林 整, 筒井 一生, 依田 孝, 角嶋 邦之. ゲート付きSiC pnダイオードの電気特性評価, 第83回応用物理学会秋季学術講演会, Aug. 2022.

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