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水谷涼一 研究業績一覧 (21件)
論文
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Reika Ota,
Shinnosuke Yasuoka,
Ryoichi Mizutani,
Takahisa Shiraishi,
Kazuki Okamoto,
Kuniyuki Kakushima,
Tomoyuki Koganezawa,
Osami Sakata,
Hiroshi Funakubo.
Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes,
J. Appl. Phys.,
vol. 134,
pp. 214103-1-6,
Dec. 2023.
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Shinnosuke Yasuoka,
Ryoichi Mizutani,
Reika Ota,
Takahisa Shiraishi,
Takao Shimizu,
Kazuki Okamoto,
Masato Uehara,
Hiroshi Yamada,
Morito Akiyama,
Hiroshi Funakubo.
Invariant polarization switching kinetics in an (Al0.2Sc0.8)N film with frequency and temperature,
Appl. Phys. Lett.,
vol. 123,
pp. 202902,
Nov. 2023.
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Shinnosuke Yasuoka,
Ryoichi Mizutani,
Reika Ota,
Takahisa Shiraishi,
Takao Shimizu,
Masato Uehara,
Hiroshi Yamada,
Morito Akiyama,
Hiroshi Funakubo.
Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy,
ACS Appl. Electron. Mater.,
Vol. 4,
pp. 5165−5170,
Oct. 2022.
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Shinnosuke YASUOKA,
Ryoichi MIZUTANI,
Reika OTA,
Takahisa SHIRAISHI,
Takao SHIMIZU,
Shintaro YASUI,
Yoshitaka EHARA,
Ken NISHIDA,
Masato UEHARA,
Hiroshi YAMADA,
Morito AKIYAMA,
Yasuhiko IMAI,
Osami SAKATA,
Hiroshi FUNAKUBO.
Enhancement of crystal anisotropy and ferroelectricity by decreasing thickness in (Al,Sc)N films,
J. Ceram. Soc. Jpn.,
Vol. 130,
No. 7,
pp. 436-441,
July 2022.
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Masato Uehara,
Ryoichi Mizutani,
Shinnosuke Yasuoka,
Takao Shimizu,
Hiroshi Yamada,
Morito Akiyama,
Hiroshi Funakubo.
Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN,
Appl. Phys. Exp.,
Vol. 15,
pp. 081003-1-5,
July 2022.
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Masato Uehara,
Ryoichi Mizutani,
Shinnosuke Yasuoka,
Takahisa Shiraishi,
Takao Shimizu,
Hiroshi Yamada,
Morito Akiyama,
Hiroshi Funakubo.
Demonstration of ferroelectricity in GaN-based thin film,
Appl. Phys. Lett.,
Vol. 119,
pp. 172901-1-5,
Oct. 2021.
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Ryoichi Mizutani,
Shinnosuke Yasuoka,
Takahisa Shiraishi,
Takao Shimizu,
Masato Uehara,
Hiroshi Yamada,
Morito Akiyama,
Osami Sakata,
Hiroshi Funakubo.
Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC/cm2 around 10 nm in thickness,
Appl. Phys. Exp.,
Vol. 14,
pp. 105501,
Sept. 2021.
国際会議発表 (査読有り)
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Masato Uehara,
Ryoichi Mizutani,
Shinnosuke Yasuoka,
Takao Shimizu,
Hiroshi Yamada,
Morito Akiyama,
Hiroshi Funakubo.
Demonstration of Ferroelectric Properties in GaN Alloyed with Sc,
2022 MRS Fall Meeting & Exhibit,
Dec. 2022.
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Shinnosuke Yasuoka,
Ryoichi Mizutani,
Reika Ota,
Takahisa Shiraishi,
Takao Shimizu,
Masato Uehara,
Hiroshi Yamada,
Morito Akiyama,
Hiroshi Funakubo.
Establishment of Control Method for Ferroelectric Properties in (Al1-xScx)N Films,
2022 MRS Spring Meeting & Exhibit,
May 2022.
国際会議発表 (査読なし・不明)
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Hiroshi Funakubo,
Shinnosuke Yasuoka,
Ryoichi Mizutani,
Takahisa Shiraishi,
Akinori Tateyama,
Reika Ota,
Kazuki Okamoto,
Takao Shimizu,
Masato Uehara,
Hiroshi Yamada,
Morito Akiyama.
Thickness Scaling and Low Voltage Operation of Ferroelectric (Al1-xScx)N Films Prepared by Sputtering Method,
2022 MRS Fall Meeting & Exhibit,
Nov. 2022.
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Reika Ota,
Shinnosuke Yasuoka,
Ryoichi Mizutani,
Takahisa Shiraishi,
Kuniyuki Kakushima,
Hiroshi Funakubo.
Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes,
2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics,
Nov. 2022.
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Ryoichi Mizutani,
Shinnosuke Yasuoka,
Takao Shimizu,
Hiroshi Funakubo.
Temperature dependence of ferroelectricity in (Al1-xScx)N thin films,
Dec. 2021.
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Hiroshi Funakubo,
Shinnosuke Yasuoka,
Ryoichi Mizutani,
Takahisa Shiraishi,
Akinori Tateyama,
Takao Shimizu,
Masato Uehara,
Hiroshi Yamada,
Morito Akiyama,
Yoshiomi Hiranaga,
Yasuo Cho.
Control of Ferroelectric Property in (Al1-xScx)N Films Prepared by Sputtering Method,
2021 MRS Fall Meeting & Exhibit,
Nov. 2021.
国内会議発表 (査読なし・不明)
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上原雅人,
水谷涼一,
安岡慎之介,
清水荘雄,
山田浩志,
秋山守人,
舟窪浩.
Sc添加GaN薄膜の強誘電性へのSc濃度と温度の影響,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
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大田怜佳,
安岡慎之介,
水谷涼一,
白石貴久,
舟窪浩.
種々の電極を用いた(Al1-x,Scx)N薄膜の強誘電性評価,
第69回応用物理学会春季学術講演会,
Mar. 2022.
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安岡慎之介,
水谷涼一,
大田怜佳,
白石貴久,
清水荘雄,
安井伸太郎,
江原祥隆,
西田謙,
上原雅人,
山田浩志,
秋山守人,
今井康彦,
坂田修身,
舟窪浩.
薄膜化による(Al,Sc)N膜の結晶異方性及び強誘電特性の向上,
第69回応用物理学会春季学術講演会,
Mar. 2022.
-
安岡慎之介,
水谷涼一,
大田怜佳,
白石貴久,
清水荘雄,
上原雅人,
山田浩志,
秋山守人,
舟窪浩.
面内配向及び熱歪による(Al,Sc)N薄膜の強誘電特性の制御,
第69回応用物理学会春季学術講演会,
Mar. 2022.
-
安岡慎之介,
水谷涼一,
大田怜佳,
白石貴久,
清水荘雄,
上原雅人,
山田浩志,
秋山守人,
舟窪浩.
強誘電体(Al1-xScx)N薄膜の結晶構造と電気特性の関係,
第41回電子材料研究討論会,
Nov. 2021.
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水谷涼一,
安岡慎之介,
清水荘雄,
舟窪浩.
(ScxAl1-x)N薄膜の強誘電性の温度依存性,
第68回応用物理学会春季学術講演会,
Mar. 2021.
その他の論文・著書など
特許など
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舟窪浩,
白石貴久,
安岡慎之介,
水谷涼一,
大田怜佳,
召田 雅実 ,
楠瀬 好郎,
上岡 義弘 ,
末本 祐也 ,
飯浜 準也 .
窒化アルミニウムスカンジウム膜及び強誘電体素子.
特許.
公開.
国立大学法人東京工業大学, 東ソー株式会社.
2023/03/30.
PCT/JP2023/013181.
2023/10/05.
WO 2023/190869.
2023.
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