論文

• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of rare earth silicates for highly scaled gate dielectrics, Microelectronic Engineering, Vol. 87, No. 10, pp. 1868-1871, Oct. 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, M.Adachi, Koichi Okamoto, Soshi Sato, Jaeyeol Song, Takamasa Kawanago, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Interface and electrical properties of La-silicate for direct contact of high-k with silicon, Solid-State Electronics, Vol. 54, pp. 715-719, June 2010.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. SrO capping effect for La2O3/ Ce-Silicate gate dielectrics, Microelectronics Reliability 50, pp. 356-359, Mar. 2010.
• Tomotsune Koyanagi, Kiichi Tachi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation, Japanese Journal of Applied Physics, Vol. 48, 2009.

国際会議発表 (査読有り)

• Tomotsune Koyanagi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, AKIRA NISHIYAMA, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device, ECS 216th Meeting, vol. 25, No. 6, pp. 17-22, Oct. 2009.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Kiichi Tachi, Miyuki Kouda, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm, ESSDERC 2009, 39th European Solid-State Device Research Conference, p. 403, Sept. 2009.
• K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. 0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Impact of Thin La2O3 Insertion for HfO2 MOSFET, 213th ECS Meeting, May 2008.
• M.Adachi, K.Okamoto, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors, ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5, The Electrochemikal Society, Vol. 11, No. 4, pp. 157-167, Oct. 2007.

国内会議発表 (査読なし・不明)

• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La2O3MOSデバイスへのSrO導入による電気特性の変化, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La203系MOSFETへのMg挿入による電気特性の変化, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 702, Sept. 2008.
• 岡本晃一, 舘喜一, 足立学, 佐藤創志, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会 予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.
• 足立学, 岡本晃一, 舘喜一, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 宋在烈, 舘喜一, 岡本晃一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.

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