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Publication List - Takeo Maruyama (92 entries)
Journal Paper
-
S. Arai,
N. Nishiyama,
T. Maruyama,
T. Okumura.
GaInAsP/InP Membrane Lasers for Optical Interconnects,
IEEE J. Sel. Top. Quantum Electron.,
IEEE,
Vol. 17,
No. 5,
pp. 1381 - 1389,
Sept. 2011.
-
Tadashi Okumura,
Munetaka Kurokawa,
Mizuki Shirao,
daisuke kondo,
Hitomi Ito,
Nobuhiko Nishiyama,
Takeo Maruyama,
SHIGEHISA ARAI.
Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits,
Opt. Express,
Vol. 17,
No. 15,
pp. 12564-12570,
July 2009.
-
SHIGEHISA ARAI,
Takeo Maruyama.
GaInAsP/InP Quantum-Wire Lasers,
IEEE J. Select. Topics in Quantum Electron.,
IEEE,
Vol. 15,
No. 3,
pp. 731-742,
May 2009.
-
Tadashi Okumura,
Takeo Maruyama,
HIDENORI YONEZAWA,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
Injection-type GaInAsP-InP-Si Distributed-feedback Laser Directly Bonded on Silicon-on-insulator Substrate,
IEEE Photonics Technol. Lett.,
Vol. 21,
No. 5,
pp. 283-285,
Mar. 2009.
-
Keita Inoue,
Dhanorm Plumwongrot,
Nobuhiko Nishiyama,
Shinichi Sakamoto,
Haruki Enomoto,
Shigeo Tamura,
Takeo Maruyama,
Shigehisa Arai.
Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60,
Jpn. J. Appl. Phys.,
vol. 48,
no. 3,
p. 030208,
Mar. 2009.
-
PDHANORM,
Takeo Maruyama,
Anisul Haque,
Yagi Hideki,
Koji Miura,
Yoshifumi Nishimoto,
SHIGEHISA ARAI.
Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures,
Jpn. J. Appl. Phys.,
Vol. 47,
No. 5,
pp. 3735-3741,
May 2008.
-
SHIGEHISA ARAI,
PDHANORM,
Takeo Maruyama,
Anisul Haque,
Yagi Hideki,
Koji Miura,
Yoshifumi Nishimoto.
Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures,
Jpn. J. Appl. Phys.,
Vol. 47,
No. 5,
pp. 3735-3741,
May 2008.
-
Tadashi Okumura,
Takeo Maruyama,
Masaki Kanemaru,
Shinichi Sakamoto,
SHIGEHISA ARAI.
Single-mode operation of GaInAsP/InP-membrane distributed feedback (DFB) lasers bonded on silicon-on-insulator (SOI) substrate with rib-waveguide structure,
Jpn. J. Appl. Phys.,
Vol. 46,
No. 48,
pp. L1206-L1208,
Dec. 2007.
-
T. Okumura,
T. Maruyama,
M. Kanemaru,
S. Sakamoto,
S. Arai.
Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure,
Jpn. J. Appl. Phys.,
vol. 46,
no. 48,
pp. L1206-L1208,
Dec. 2007.
-
S. Sakamoto,
H. Naitoh,
M. Ohtake,
Y. Nishimoto,
T. Maruyama,
N. Nishiyama,
S. Arai.
85°C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer,
Jpn. J. Appl. Phys.,
vol. 46,
no. 47,
pp. L1155-L1157,
Nov. 2007.
-
H. Naitoh,
S. Sakamoto,
Mamoru Otake,
T. Okumura,
T. Maruyama,
N. Nishiyama,
S. Arai.
GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure,
Jpn. J. Appl. Phys.,
vol. 46,
no. 47,
pp. L1158-L1160,
Nov. 2007.
-
D. Plumwongrot,
Y. Nishimoto,
S. M. Ullah,
Y. Tamura,
M. Kurokawa,
T. Maruyama,
N. Nishiyama,
S. Arai.
Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions,
Jpn. J. Appl. Phys.,
vol. 46,
no. 45,
pp. L1090-L1092,
Nov. 2007.
-
S. Sakamoto,
Y. Nishimoto,
S. Tamura,
T. Maruyama,
N. Nishiyama,
S. Arai.
Strongly Index-Coupled Membrane BH-DFB Lasers With Surface Corrugation Grating,
IEEE J. Select. Top. in Quantum Electron.,
IEEE,
vol. 13,
no. 5,
pp. 1135-1141,
Sept. 2007.
-
S. Sakamoto,
H. Kawashima,
H. Naitoh,
S. Tamura,
T. Maruyama,
S. Arai.
Reduced Temperature Dependence of Lasing Wavelength in Membrane Buried Heterostructure DFB Lasers with Polymer Cladding Layers,
IEEE Photonics Technology Letters,
Vol. 19,
No. 5,
pp. 291-293,
Mar. 2007.
-
Y. Nishimoto,
K. Miura,
H. Yagi,
D. Plumwongrot,
K. Ohira,
T. Maruyama,
S. Arai.
Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes,
Jpn. J. Appl. Phys.,
vol. 46,
no. 2,
pp. L34-L36,
Feb. 2007.
-
Y. Nishimoto,
K. Miura,
H. Yagi,
D. Plumwongrot,
K. Ohira,
T. Maruyama,
S. Arai.
Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes,
Japanese Journal of Applied Physics,
Vol. 46,
No. 2,
pp. L34-L36,
Feb. 2007.
-
T. Maruyama,
T. Okumura,
S. Arai.
Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate,
Japanese Journal of Applied Physics,
Vol. 45,
No. 11,
pp. 8717-8718,
Nov. 2006.
-
Takeo Maruyama,
Tadashi Okumura,
SHIGEHISA ARAI.
Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate,
Jpn. J. Appl. Phys,
Vol. 45,
No. 11,
pp. L8717-L8718,
Nov. 2006.
-
Takeo Maruyama,
Tadashi Okumura,
Shinichi Sakamoto,
Koji Miura,
Yoshifumi Nishimoto,
SHIGEHISA ARAI.
GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate,
Opt. Express,
Vol. 16,
No. 14,
pp. 8814-8818,
Sept. 2006.
-
T. Maruyama,
T. Okumura,
S. Sakamoto,
K. Miura,
Y. Nishimoto,
S. Arai.
GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate,
Optics Express,
Vol. 14,
No. 18,
pp. 8184-8188,
Sept. 2006.
-
H. Yagi,
K. Miura,
Y. Nishimoto,
D. Plumwongrot,
K. Ohira,
T. Maruyama,
S. Arai.
Low-threshold-current operation of 1540 nm GaInAsP/InP distributed-feedback lasers with multiple-quantum-wire active regions,
Japanese Journal of Applied Physics,
Vol. 87,
No. 22,
pp. 223120-1-223120-3,
Nov. 2005.
-
H. Yagi,
T. Sano,
K. Ohira,
D. Plumwongrot,
T. Maruyama,
A. Haque,
S. Tamura,
S. Arai.
GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes,
Japanese Journal of Applied Physics,
Vol. 43,
No. 6A,
pp. 3401-3409,
June 2004.
-
T. Maruyama,
N. Nakamura,
M. Watanabe.
Crystal Growth of BeZnSe on CaF2/Si(111) Subtrate,
Jpn. J. Appl. Phys.,
Vol. 41,
No. 8A,
pp. L876-L877,
Aug. 2002.
-
Y. Niiyama,
T. Maruyama,
N. Nakamura,
M. Watanabe.
Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001),
Jpn. J. Appl. Phys.,
Vol. 41,
No. 7A,
pp. L751-L753,
July 2002.
-
Takeo Maruyama,
Naoto Nakamura,
Masahiro Watanabe.
Crystal growth of BeZnSe on CaF2/Si(111) substrate,
Japanese Journal of Applied Physics,
Vol. 41,
pp. L876-L877,
2002.
-
T. Maruyama,
N. Nakamura,
M. Watanabe.
Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF2 on Si(111) Substrate Prepared by Rapid Thermal Annealling,
Jpn. J. Appl. Phys.,
Vol. 39,
No. 4B,
pp. 1996-2000,
Apr. 2000.
-
Takeo MARUYAMA,
Naoto NAKAMURA,
Masahiro WATANABE.
Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2 on Si(111) Substrate Prepared by Rapid Thermal Annealing,
Japanese Journal of Applied Physics,
Vol. 39,
pp. 1996-2000,
2000.
-
T. Maruyama,
N. Nakamura,
M. Watanabe.
Visible electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF2/Si(111) with Rapid Thermal Anneal,
Jpn. J. Appl. Phys.,
Vol. 38,
No. 8B,
pp. L904-L906,
Aug. 1999.
-
Takeo MARUYAMA,
Naoto NAKAMURA,
Masahiro WATANABE.
Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystyalline CaF_2/Si(111) with Rapid Thermal Anneal,
Japanese Journal of Applied Physics,
Vol. 38,
pp. L904-L906,
1999.
-
M. Watanabe,
T. Maruyama,
S. Ikeda.
Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): effect of rapid thermal annealing,
J. Luminescence,
Vol. 80,
No. 253,
pp. 253-256,
1999.
-
M. Watanabe,
T. Matsunuma,
T. Matsunuma,
T. Maruyama,
Y. Maeda.
Electroluminescence of nanocrystal Si embedded in singel-crystal CaF2/Si,
Vol. 37,
No. 5B,
pp. L591-L593,
May 1998.
-
M. Watanabe,
T. Matsunuma,
T. Maruyama,
Y. Maeda.
Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF2/Si(111),
Jpn. J. Appl. Phys.,
Vol. 37,
No. 5B,
pp. L591-L593,
May 1998.
-
MASAHIRO WATANABE,
W. Saitoh,
K. Mori,
H. Sugiura,
T. Maruyama,
M. Asada.
Reduction of Electrical Resistance of Nanometer-Thick CoSi2 Film on CaF2 by pseudomorphic growth of CaF2 on Si(111),
Jpn. J. Appl. Phys.,
Vol. 36,
No. 7A,
pp. 4470-4471,
July 1997.
Official location
-
MASAHIRO WATANABE,
Y. Miyamoto, K,
T. Maruyama,
M. Asada.
Detection of hot electron current with scanning hot electron microscopy,
Appl. Phys. Lett,
Vol. 69,
No. 15,
pp. 2196-2198,
Oct. 1996.
International Conference (Reviewed)
-
Nobuhiko NISHIYAMA,
Takeo MARUYAMA,
Shigehisa ARAI.
III-V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI,
IPRM 2009,
IEEE,
WB1.1,
May 2009.
-
Keita Inoue,
Dhanorm Plumuwongrot,
Nobuhiko Nishiyama,
Shinichi Sakamoto,
Haruki Enomoto,
Shigeo Tamura,
Takeo Maruyama,
Shigehisa Arai.
Loss Reduction of SiWireWaveguide on SOI Substrate Prepared by Parallel Plate RIE using Double Layered Resist Mask with C60,
The IEEE Nanotechnology Materials and Devices Conference 2008,
IEEE NMDC2008,
Oct. 2008.
Official location
-
Tadashi Okumura,
Takeo Maruyama,
HIDENORI YONEZAWA,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
Injection Type GaInAsP/InP/Si DFB Lasers Directly Bonded on SOI Substrate,
The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008),
Vol. Versaille, France,
No. TuA1-6,
May 2008.
-
D. Plumwongrot,
M. Kurokawa,
T. Okumura,
Y. Nishimoto,
T. Maruyama,
N. Nishiyama,
S. Arai.
Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths,
OPTO2008 (part of SPIE Photonics West 2008),
OPTO2008 (part of SPIE Photonics West 2008),
SPIE,
Vol. San Jose (USA),
No. 6909-11,
Jan. 2008.
-
SHIGEHISA ARAI,
SAEED MAHMUD ULLAH,
SeungHun Lee,
PDHANORM,
Munetaka Kurokawa,
Shinichi Sakamoto,
Hideyuki Naitoh,
Tadashi Okumura,
Takeo Maruyama,
Nobuhiko Nishiyama.
GaInAsP/InP Distributed Feedback and Distributed Reflector Lasers with Fine Wirelike Active Regions,
Photonics WEST Optoelectronics 2008,
OPTO2008 (part of SPIE Photonics West 2008),
SPIE,
Vol. Photonics WEST Optoelectronics 2008,
No. San Jose (USA),
pp. 6902-04,
Jan. 2008.
-
D. Plumwongrot,
Yousuke Tamura,
Y. Nishimoto,
M. Kurokawa,
T. Maruyama,
N. Nishiyama,
S. Arai.
Length dependencies of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process,
OPTO2008 (part of SPIE Photonics West 2008),
OPTO2008 (part of SPIE Photonics West 2008),
No. 6902-4,
Jan. 2008.
-
D. Plumwongrot,
Y. Tamura,
T. Maruyama,
N. Nishiyama,
S. Arai.
Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures,
The 20th International Microprocesses and Nanotechnology Conference (MNC2007),
Digest of MNC2007,
no. 6A-4-51,
Nov. 2007.
-
D. Plumwongrot,
M. Kurokawa,
T. Okumura,
Y. Nishimoto,
T. Maruyama,
N. Nishiyama,
S. Arai.
Observation of RIE Induced Damage on Lasing Properties of GaInAsP/InP MQW Lasers Fabricated by 2-step Growths,
The 34th International Symposium on Compound Semiconductors (ISCS2007),
The 34th International Symposium on Compound Semiconductors (ISCS2007),
no. ThC-P9,
Sept. 2007.
-
T. Maruyama,
T. Okumura,
M. Kanemaru,
S. Sakamoto,
S. Tamura,
S. Arai.
GaInAsP/InP Membrane DFB Lasers Directly Boded on SOI Substrate with Rib-waveguide Structure,
12th OptoElectronics and Communications Conference/16th Intl Conference on Integrated Optics & Optical Fiber Communication (OECC/IOOC 2007),
12th OptoElectronics and Communications Conference/16th Intl Conference on Integrated Optics & Optical Fiber Communication (OECC/IOOC 2007),
Vol. Yokohama (Japan),
no. 12D1-3,
pp. 390-391,
July 2007.
-
Tadashi Okumura,
Takeo Maruyama,
Masaki Kanemaru,
Shinichi Sakamoto,
shigeo tamura,
SHIGEHISA ARAI.
Fundamental-mode operation of GaInAsP/InP membrane DFB lasers bonded on SOI substrate and its waveguide integration,
The 19th Indium Phosphide and Related Material,
TuB2-2,
May 2007.
-
Hideyuki Naitoh,
Shinichi Sakamoto,
Mamoru Otake,
Tadashi Okumura,
Takeo Maruyama,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
80 ºC CW Operation of GaInAsP/InP Membrane BH-DFB Laser With Air-Bridge Structure,
The 19th Indium Phosphide and Related Material (IPRM 2007),
Vol. Matsue (Japan),
No. ThB1-2,
May 2007.
-
S. Sakamoto,
H. Naitoh,
H. Kawashima,
M. Ohtake,
S. Tamura,
T. Maruyama,
N. Nishiyama,
S. Arai.
85℃ continuous wave operation of membrane BH-DFB Laser cladded by benzocyclobutene,
10th International Symposium on Contemporary Photonics Technology (CPT 2007),
10th International Symposium on Contemporary Photonics Technology (CPT 2007),
Vol. Tokyo (Japan),
no. G-6,
Jan. 2007.
-
Takeo Maruyama,
Tadashi Okumura,
Shinichi Sakamoto,
Koji Miura,
Yoshifumi Nishimoto,
SHIGEHISA ARAI.
GaInAsP/InP long-wavelength membrane BH-DFB lasers directly bonded on SOI Substrate,
The 11th Opto-Electronics and Communications Conferen,
Vol. Kaohsiung (Taiwan),
No. 5E1-3,
July 2006.
-
T. Maruyama,
N. Nakamura,
M. Watanabe.
Visible Electroluninescence from Silicon Nanocrystals Embeded in CaF2 Epilayers on Si(111) with Rapid Thermal Anneal,
The 1999 International Conference on Solid State Devices and Materials,
D-11-1,
426-427,
Sept. 1999.
-
M. Watanabe,
T. Maruyama,
S. Ikeda.
Light Emission from Nanocrystal Si Embedded in CaF2 Epilayers on Si(111): Effect of Rapid Thermal Annealing,
E-MRS 1998 Spring Meeting,
B-II/P.10,
B-29,
June 1998.
-
M. Watanabe,
T. Matsunuma,
T. Maruyama,
M. Asada.
Electroluminescence from silicon nanoparticles embedded in CaF2 on Si(111),
Phantoms Strategic Domain Meetings (PHASDOM97),
D2.23c,
Mar. 1997.
-
F. Vazquez,
D. Kobayashi,
I. Kobayashi,
K. Furuya,
Y. Miyamoto,
T. Maruyama,
M. Watanabe,
M. Asada.
Experimental Evidence of Hot Electron Detection with Scanning Hot Electron Microscopy (SHEM),
the 1996 International Conference on Solid State Devices and Materials,
Sympo. IV-7,
187-189,
Aug. 1996.
Domestic Conference (Reviewed)
International Conference (Not reviewed / Unknown)
Domestic Conference (Not reviewed / Unknown)
-
Nobuhiko Nishiyama,
Takeo Maruyama,
Yoshitaka Oiso,
Tomohiro Amemiya,
Takayuki Iwasaki,
Mutsuko Hatano.
磁気センサの大型化を可能とする導波路集積型ダイヤモンドセンサ構造の提案,
第67回応用物理学会春季学術講演会,
第67回応用物理学会春季学術講演会予稿集,
Mar. 2020.
-
Nobuhiko Nishiyama,
Takeo Maruyama,
SHIGEHISA ARAI.
Status of semiconductor lasers and emitting devices of Si Substrate,
2009年電子情報通信学会総合大会,
CI-2-4,
Mar. 2009.
-
SHIGEHISA ARAI,
Takeo Maruyama,
Nobuhiko Nishiyama,
Tadashi Okumura,
Munetaka Kurokawa,
Mizuki Shirao,
HIDENORI YONEZAWA,
daisuke kondo,
Hitomi Ito.
シリコンフォトニクス光源,
シリコンフォトニクス技術分科会,
シリコンフォトニクス技術分科会,
JEITA(社 電子情報技術産業協会),
Dec. 2008.
-
SHIGEHISA ARAI,
Takeo Maruyama,
Nobuhiko Nishiyama,
Tadashi Okumura,
Munetaka Kurokawa,
Mizuki Shirao,
HIDENORI YONEZAWA,
daisuke kondo,
Hitomi Ito.
SOI上の半導体薄膜レーザ,
電子情報通信学会シリコンフォトニクス研究会,
電子情報通信学会,
東京,
SiPH2008-15,
pp. 19–24,
Nov. 2008.
-
Keita Inoue,
Nobuhiko Nishiyama,
Haruki Enomoto,
Shigeo tamura,
Takeo Maruyama,
Shigehisa Arai.
Evaluation of Si Wire Waveguide Fabricated by Parallel Plate RIE Process using Double Layered EB Resist Containing C60,
iNOW 2008,
Digest of iNOW2008,
No. 3-P24,
Aug. 2008.
-
Tadashi Okumura,
Takeo Maruyama,
HIDENORI YONEZAWA,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding,
電子情報通信学会レーザ・量子エレクトロニクス研究会.,
Vol. 東京,
No. LQE2008-29,
pp. pp. 45-50,
June 2008.
-
Keita Inoue,
プルームウォンロート・タノーム,
Nobuhiko Nishiyama,
Shinichi Sakamoto,
Haruki Enomoto,
shigeo tamura,
Takeo Maruyama,
SHIGEHISA ARAI.
C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上,
第55回応用物理学関係連合講演会,
第55回応用物理学関係連合講演会,
応用物理学会,
Vol. 千葉,
No. 29p-ZG-15,
Mar. 2008.
-
プルームウォンロート・タノーム,
Koji Ozawa,
Munetaka Kurokawa,
shigeo tamura,
Takeo Maruyama,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
低温現像によるGaInAsP/InP量子細線構造の線幅ばらつきの低減,
第55回応用物理学関係連合講演会,
第55回応用物理学関係連合講演会,
応用物理学会,
Vol. 千葉,
no. 28p-E-18,
Mar. 2008.
-
Tadashi Okumura,
Takeo Maruyama,
HIDENORI YONEZAWA,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
直接貼付法によるSOI基板上注入形GaInAsP/InP DFB レーザ,
第55回応用物理学関係連合講演会,
第55回応用物理学関係連合講演会,
応用物理学会,
Vol. 千葉,
no. 29p-ZQ-4,
Mar. 2008.
-
Munetaka Kurokawa,
プルームウォンロート・タノーム,
Koji Ozawa,
Takeo Maruyama,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
GaInAsP/InP量子井戸構造のRIEプラズマによるPL強度劣化とアニールによる回復,
第55回応用物理学関係連合講演会,
第55回応用物理学関係連合講演会,
応用物理学会,
Vol. 千葉,
No. 28p-P9-7,
Mar. 2008.
-
Dhanorm Plumwongrot,
田村洋介,
西本頼史,
Munetaka Kurokawa,
Takeo Maruyama,
N. Nishiyama,
S. Arai.
Wire-Length Dependence of Polarization Anisotropy in GaInAsP/InP Quantum-Wire Structures,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
応用物理学会,
Vol. 札幌,
no. 7a-N-11,
p. 1421,
Sept. 2007.
-
Tadashi Okumura,
Takeo Maruyama,
Masaki Kanemaru,
SHIGEHISA ARAI.
直接貼付法によるSOI基板上GaInAsP/InP-LED,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
Vol. 札幌,
no. 7a-C-13,
p. 1160,
Sept. 2007.
-
Munetaka Kurokawa,
Dhanorm Plumwongrot,
西本頼史,
Takeo Maruyama,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
2段階OMVPE成長GaInAsP/InP量子井戸レーザにおけるRIEプラズマ損傷とその低減,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
応用物理学会,
Vol. 札幌,
no. 7p-C-6,
p. 1162,
Sept. 2007.
-
Takeo Maruyama,
Tadashi Okumura,
SHIGEHISA ARAI.
シリコン上レーザ実現への展望,
電子情報通信学会エレクトロニクスソサィエティ大会,
電子情報通信学会エレクトロニクスソサィエティ大会,
電子情報通信学会,
Vol. 鳥取,
no. CK-1-8,
pp. SS14-SS15,
Sept. 2007.
-
Takeo Maruyama,
Tadashi Okumura,
Masaki Kanemaru,
Shinichi Sakamoto,
shigeo tamura,
SHIGEHISA ARAI.
Thermal characteristics of GaInAsP/InP membrane DFB lasers on SOI substrate integrated with rib-waveguide,
The 12th Opto-Electronics and Communications Conference,
12D1-3,
July 2007.
-
Hideyuki Naitoh,
Shinichi Sakamoto,
大竹守,
Tadashi Okumura,
Takeo Maruyama,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ,
電子情報通信学会レーザ・量子エレクトロニクス研究会,
電子情報通信学会レーザ・量子エレクトロニクス研究会,
電子情報通信学会,
Vol. 東京,
no. LQE2007-21,
pp. 19-22,
June 2007.
-
Hideyuki Naitoh,
Shinichi Sakamoto,
大竹守,
Tadashi Okumura,
Takeo Maruyama,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ,
第54回応用物理学関係連合講演会,
第54回応用物理学関係連合講演会,
Vol. 神奈川,
No. 28p-SG-11,
p. 1225,
Mar. 2007.
-
プルームウォンロート・タノーム,
田村洋介,
西本頼史,
Munetaka Kurokawa,
Takeo Maruyama,
SHIGEHISA ARAI.
Plasma Induced Material Composition Alteration in GaInAsP/InP Quantum-Well Structure,
第54回応用物理学関係連合講演会,
第54回応用物理学関係連合講演会,
応用物理学会,
Vol. 神奈川,
no. 27a-SM-9,
p. 1483,
Mar. 2007.
-
Takeo Maruyama,
Tadashi Okumura,
Masaki Kanemaru,
Shinichi Sakamoto,
SHIGEHISA ARAI.
導波路集積型SOI基板上GaInAsP/InP薄膜DFBレーザ,
第54回応用物理学関係連合講演会,
Vol. 神奈川,
No. 28a-SG-11,
Mar. 2007.
-
Takeo Maruyama,
Tadashi Okumura,
Masaki Kanemaru,
Shinichi Sakamoto,
SHIGEHISA ARAI.
SOI基板上導波路集積型BH-DFB半導体薄膜レーザ,
電子情報通信学会シリコンフォトニクス研究会,
Vol. 東京,
No. SiPH2006-11,
pp. 49-52,
Jan. 2007.
-
Tadashi Okumura,
Takeo Maruyama,
Shinichi Sakamoto,
Yoshifumi Nishimoto,
SHIGEHISA ARAI.
直接貼り付け法によるSOI基板上GaInAsP/InP半導体薄膜レーザ,
電子情報通信学会レーザ・量子エレクトロニクス研究会,
Vol. 東京,
No. LQE2006-104,
pp. 7-12,
Dec. 2006.
-
Takeo Maruyama,
Tadashi Okumura,
Shinichi Sakamoto,
SHIGEHISA ARAI.
直接貼付法によるSOI基板上GaInAsP/InP薄膜DFBレーザ,
第67回応用物理学会学術講演会,
Vol. 滋賀,
No. 29a-ZT-15,
p. Digest III-p. 1049,
Aug. 2006.
-
Takeo Maruyama,
Tadashi Okumura,
Shinichi Sakamoto,
Koji Miura,
Yoshifumi Nishimoto,
SHIGEHISA ARAI.
Direct bonding of GaInAsP/InP membrane structure on SOI wafer,
The 18th Indium Phosphide and Related Materials Conference (IPRM2006),
The 18th Indium Phosphide and Related Materials Conference,
Vol. WP-2,
May 2006.
-
Takeo Maruyama,
Tadashi Okumura,
SHIGEHISA ARAI.
SOI 基板上へのGaInAsP/InP 薄膜直接貼り付け,
第53回応用物理学関係連合講演会,
Vol. 東京,
No. 24a-B-6,
Mar. 2006.
-
Y. Niiyama,
T. Yokoyama,
T. Murata,
T. Maruyama,
M. Watanabe.
Theoretical analysis of BeMgZnSe ultraviolet quantum well laser – cladding layer Mg content dependence of threshold current density –,
The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys,
30p-B-13,
1,
251,
Aug. 2003.
-
Y. Niiyama,
T. Maruyama,
M. Watanabe.
UV-Photoluminescence of BeMgZnSe-BeZnSe DH structure on GaP(100) substrate,
The 63rd Autumn Meeting of The Jpn. Soc. of Appl. Phys,
26p-YE-7,
1,
272,
Sept. 2002.
-
N. Nakamura,
T. Maruyama,
Y. Niiyama,
M. Watanabe.
Epitaxial growth of BeMgZnSe on GaP(001),
The 62nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys,
11a-P1-3,
1,
207,
Sept. 2001.
-
T. Maruyama,
N. Nakamura,
Y. Niiyama,
M. Watanabe.
UV photoluminescence from BeZnSe grown on GaP (001) substratre at room temperature,
The 62nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys,
11a-P1-2,
1,
207,
Sept. 2001.
-
T. Maruyama,
N. Nakamura,
M. Watanabe.
Epitaxial growth of BeZnSe on CaF2/Si(111) substrate,
The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies,
28p-K-13,
1,
319,
Mar. 2001.
-
T. Maruyama,
N. Nakamura,
M. Watanabe.
Crystal growth of BeSe on CaF2/Si(111) substrate,
The 61st Autumn Meeting of The Jpn. Soc. Of Appl. Phys,
4p-Z-8,
1,
236,
Sept. 2000.
-
N. Nakamura,
T. Maruyama,
M. Watanabe.
EL spectra from nano-crystalline Si embedded in CaF2/Si(111) thin film,
The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys,
3p-ZN-15,
2,
768,
Sept. 1999.
-
T. Maruyama,
N. Nakamura,
M. Watanabe.
RTA ambient dependence of PL spectra from nano-crystalline Si embedded in CaF2/Si(111) thin film,
The 59th Autumn Meeting of The Jpn. Soc. Of Appl. Phys,
16a-ZE-8,
2,
795,
Sept. 1998.
-
T. Maruyama,
S. Ikeda,
M. Watanabe.
Growth condition dependence of photoluminescence spectra from nano-cryatalline Si embedded in CaF2/Si(111) thin film,
The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies,
29a-p-8,
2,
838,
Mar. 1998.
-
M. Watanabe,
T. Matsunuma,
T. Maruyama,
M. Asada.
Visible Electroluminescence from Silicon Nanoparticles Embedded in CaF2 on Si(111),
Second International Symposium on Control of Semiconductor Interfaces,
A3-6,
Oct. 1996.
-
W.Saitoh,
K.Mori,
H.Sugiura,
T.Maruyama,
M.Watanabe,
M.Asada.
Relation of Resistance of Ultra Thin CoSi2 Films on CaF2 and Crystal Quality of CaF2,
Nat. Conv. Rec. of The Japan Soc. of Appl. Phys.,
8p-ZE17,
1,
200,
Sept. 1996.
-
松沼健司,
Takeo Maruyama,
MASAHIRO WATANABE,
浅田雅弘.
Electroluminescence spectra from nano-crystalline Si embedded in CaF2,
Nat. Conv. Rec. of The Japan Soc. of Appl. Phys.,
8p-V15,
2,
679,
Sept. 1996.
-
T.Matsunuma,
T.Maruyama,
M.Watanabe,
M.Asada.
Growth condition dependence of electroluminescence from nanometer crystalline Si embedded in CaF2,
Nat. Conv. Rec. of The Japan Soc. of Appl. Phys.,
26aZF5,
1,
214,
Mar. 1996.
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