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Publication List - Shinjiro Iwata (14 entries)
Journal Paper
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Wenbo Lin,
Shinjiro Iwata,
Koichi Fukuda,
Yasuyuki Miyamoto.
Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration,
Japanese Journal of Applied Physics,
Vol. 55,
No. 7,
pp. 070303,
June 2016.
Official location
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Shinjiro Iwata,
Kazumi Ohashi,
Wenbo Lin,
Koichi Fukuda,
YASUYUKI MIYAMOTO.
GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性,
電気学会論文誌C,
Vol. 136,
no. 4,
pp. 467-473,
Apr. 2016.
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K. Ohashi,
M. Fujimatsu,
S. Iwata,
Y. Miyamoto.
Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs,
Jpn. J. Appl.Phys.,
Vol. 54,
Number 4S,
Apr. 2015.
International Conference (Reviewed)
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N. Kise,
S. Iwata,
R. Aonuma,
K. Ohsawa,
Y. Miyamoto.
GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature,
Compound Semiconductor Week 2017,
C804,
May 2017.
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Y. Miyamoto,
W. Lin,
S.Iwata,
K. Fukuda.
Steep sub-threshold slope in short-channel InGaAs TFET (Invited),
The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016),
A6-I-01,
July 2016.
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S. Iwata,
W. Lin,
K. Fukuda,
Y. Miyamoto.
Design of drain for low off current in GaAsSb/InGaAs tunnel FETs,
2015 International Conference on Solid State Devices and Materials (SSDM),
Sept. 2015.
International Conference (Not reviewed / Unknown)
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Y. Miyamoto,
M. Fujimatsu,
K. Ohashi,
A. Yukimachi,
S. Iwata.
Steep subthreshold slope in InGaAs MOSFET,
SemiconNano2015,
Sept. 2015.
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Y. Miyamoto,
T. Kanazawa,
Y. Yonai,
K. Ohsawa,
Y. Mishima,
M. Fujimatsu,
K. Ohashi,
S. Nestu,
S. Iwata.
InGaAs channel for low supply voltage,
2015 International Conference on Solid State Devices and Materials (SSDM),
Sept. 2015.
Domestic Conference (Not reviewed / Unknown)
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Shinjiro Iwata,
Kazumi Ohashi,
Netsu Seikou,
Koichi Fukuda,
YASUYUKI MIYAMOTO.
GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化,
第76回応用物理学会秋季学術講演会,
16a-1C-6,
Sept. 2018.
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Nobukazu Kise,
Shinjiro Iwata,
Ryousuke Aonuma,
YASUYUKI MIYAMOTO.
[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET,
第78回応用物理学会秋季学術講演会,
Sept. 2017.
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Ryousuke Aonuma,
Shinjiro Iwata,
Nobukazu Kise,
YASUYUKI MIYAMOTO.
68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET,
電気学会電子デバイス研究会,
EDD-17-051,
Mar. 2017.
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Shinjiro Iwata,
Nobukazu Kise,
Ryousuke Aonuma,
YASUYUKI MIYAMOTO.
[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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Wenbo Lin,
Shinjiro Iwata,
Koichi Fukuda,
YASUYUKI MIYAMOTO.
Contribution to Off-Current of Source-Drain Direct Tunneling in Short-Channel TFET,
The 63rd JSAP Spring Meeting 2016,
Mar. 2016.
Official location
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Shinjiro Iwata,
Kazumi Ohashi,
YASUYUKI MIYAMOTO.
GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性,
電子情報通信学会 総合大会,
Mar. 2015.
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