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Publication List - YASUYUKI MIYAMOTO 2019 (19 / 477 entries)
Journal Paper
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Y. Miyamoto,
T. Kanazawa,
N. Kise,
H. Kinoshita,
K. Ohsawa.
Regrown Source/Drain in InGaAs Multi-Gate MOSFETs,
J. Crystal Growth,
vol. 522,
(2019)11-15,
Sept. 2019.
Official location
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K. Hotta,
Y. Tomizuka,
K. Itagaki,
I. Makabe,
S. Yoshida,
Y. Miyamoto.
Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure,
Jpn. J. Appl. Phys,
58, (2019),
SC,
SCCD14,
May 2019.
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W Zhang,
T. Kanazawa,
Y. Miyamoto.
Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment,
Apl. Phys. Exp,
vol. 12,
no. 6,
065005 (2019),
May 2019.
Official location
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R. Aonuma,
N. Kise,
Y. Miyamoto.
GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature,
Jpn. J. Appl. Phys.,
58, SBBA08 (2019),
Mar. 2019.
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W Zhang,
S. Netsu,
T. Kanazawa,
T. Amemiya,
Y. Miyamoto.
Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor,
Jpn. J. Appl. Phys,
58, SBBH02 (2019),
Jan. 2019.
International Conference (Reviewed)
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Moataz Eissa,
Takuya Mitarai,
Tomohiro Amemiya,
Nobuhiko Nishiyama,
Yasuyuki Miyamoto.
Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction,
32nd International Microprocesses and Nanotechnology Conference (MNC 2019),
Oct. 2019.
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K. Fukuda,
N. Nogami,
S. Kunisada,
Y. Miyamoto.
Circuit speedoriented device design scheme for double gate hetero tunnel FETs,
2019 International Conference on Solid State Devices and Materials(SSDM 2019),
PS-1-21(LN),,
Sept. 2019.
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M.Kitamura,
T.Kanazawa,
Y.Miyamoto.
Evaluation of fabricationmethod of InGaAs nanosheet,
13rd th Topical Workshop onHeterostructure Microelectronics, (TWHM 2019),
6-6,
Aug. 2019.
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Y. Miyamoto.
Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer,
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019),
B7-4,
July 2019.
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Tomohiro Amemiya,
Tomoya Yoshida,
Yuki Atsumi,
Yasuyuki Miyamoto,
Yoichi Sakakibara,
Shigehisa Arai.
Si-based Orbital Angular Momentum Mux/Demux Module,
IEEE International Nanoelectronics Conference (INEC 2019),
July 2019.
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A. Hayasaka,
R. Aonuma,
K. Hotta,
I. Makabe,
S. Yoshida,
Y. Miyamoto.
N-polar GaN HEMT with Al2O3 gate insulator,
Compound Semiconductor Week 2019,
MoP-G-8 (Poster),
May 2019.
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Tomohiro Amemiya,
Tomoya Yoshida,
Yuki Atsumi,
Nobuhiko Nishiyama,
Yasuyuki Miyamoto,
Yoichi Sakakibara,
Shigehisa Arai.
Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides,
2019 Optical Fiber Communication Conference (OFC 2019),
Mar. 2019.
Domestic Conference (Not reviewed / Unknown)
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Moataz Eissa,
Takuya Mitarai,
Tomohiro Amemiya,
Nobuhiko Nishiyama,
Yasuyuki Miyamoto.
Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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Akihiro Hayasaka,
Ryousuke Aonuma,
Koushi Hotta,
Nanae Kanai,
眞壁 勇夫,
吉田 成輝,
YASUYUKI MIYAMOTO.
N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減,
第80回 応用物理学会 秋季学術講演会,
18p-N302-11,
Sept. 2019.
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Akihiro Hayasaka,
Ryousuke Aonuma,
Koushi Hotta,
眞壁 勇夫,
吉田 成輝,
YASUYUKI MIYAMOTO.
Al2O3ゲート絶縁膜を持つN極性GaN HEMT,
第66回応用物理学会春季学術講演会,
9p-M121-13,
Mar. 2019.
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Tomohiro Amemiya,
Tomoya Yoshida,
Yuki Atsumi,
nobuhiko nishiyama,
YASUYUKI MIYAMOTO,
Yoichi Sakakibara,
SHIGEHISA ARAI.
Siフォトニクスによる光渦MUX/DEMUXモジュール,
電子情報通信学会 2018年総合大会,
Mar. 2019.
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Wenlun Zhang,
Toru Kanazawa,
Minoru Kitamura,
YASUYUKI MIYAMOTO.
UV-O3表面酸化によるHfS2 MOSFETの性能改善,
第66回応用物理学会春季学術講演会,
11p-W521-4,
Mar. 2019.
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Naoya Nogami,
Koichi Fukuda,
YASUYUKI MIYAMOTO.
量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討,
第66回応用物理学会春季学術講演会,
9p-S221-4,
Mar. 2019.
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Minoru Kitamura,
Toru Kanazawa,
YASUYUKI MIYAMOTO.
HSQを用いたInGaAsナノシート構造作製法評価,
第66回応用物理学会春季学術講演会,
11a-M121-11,
Mar. 2019.
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