論文

• Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing, Japanese Journal of Applied Physics, Vol. 61, 075506, July 2022.
• Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box, Journal of the Electron Devices Society (J-EDS), Vol. 9, p. 1117, Aug. 2021.

国際会議発表 (査読有り)

• Ryo Ono, Shinya Imai, Takamasa Kawanago, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Takuya Hamada, Taiga Horiguchi, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering, Internatonal Conference on Solid State Devices and Materials, Sept. 2021.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Shigetaka Tomiya, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.

国内会議発表 (査読なし・不明)

• 今井 慎也, 梶川 亮介, 川那子 高暢, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 今井 慎也, 小野 凌, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. MoS2膜質のスパッタ成膜レート依存性調査, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 堀口 大河, 濱田 拓也, 辰巳 哲也, 冨谷 茂隆, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 拓也, 堀口 大河, 辰巳 哲也, 冨谷 茂隆, 濱田 昌也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.

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