論文

• Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact, IEEE Journal of the Electron Devices Society, IEEE, Vol. 11, p. 15-21, Nov. 2022.  公式リンク  
  
• Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, Volume 61, June 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics (JJAP), Vol. 61, No. 2, Feb. 2022.

国際会議発表 (査読有り)

• Kazuto Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films, International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation, International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.

国際会議発表 (査読なし・不明)

• Y.-W. Lin, K. Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y.-F. Tsao, T.-J. Huang, H.-T. Hsu, K. Kakushima. Ferroelectric HfO2 Capacitors for Varctor Application in GHz, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• "Kazuto Mizutani, Yu-Wei Lin, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima". Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Kazuto Mizutani, Yu Wei Lin, Takuya Hoshii, Hiroshi Funakubo, Hitoshi Wakabayashi, Kazuto Tsutsui, Kuniyuki Kakushima. Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing, 2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications), Aug. 2020.

国内会議発表 (査読なし・不明)

• 川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 水谷 一翔, 星井 拓也, 川那子 高暢, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善, 第83回応用物理学会秋季学術講演会, Sept. 2022.

学位論文

• A study on reliability improvements in ferroelectric HfO2 by rare-earth oxides lamination and capping,  Thesis,  Tokyo Institute of Technology, 
• 希土類酸化物層を利用した強誘電体酸化ハフニウムの信頼性改善に関する研究,  論文要旨,  東京工業大学, 

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