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Publication List - Munehiro Ogasawara (16 entries)
Journal Paper
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Arisa Kimura,
Kaito Kuroki,
Ryoichiro Yoshida,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification,
Japanese Journal of Applied Physics,
Vol. 62,
SC1060,
Feb. 2023.
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Kaito Kuroki,
Arisa Kimura,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Design and Fabrication Results of Z-gate Layout MOSFETs for Radiation Hardness Integrated Circuit,
Japanese Journal of Applied Physics,
Vol. 62,
SC1045,
Jan. 2023.
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Takashi Yoda,
Noboru Ishihara,
Yuta Oshima,
Motoki Ando,
Kohei Kashiwagi,
Ryoichiro Yoshida,
Arisa Kimura,
Kaito Kuroki,
Shinsuke Nabeya,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Hiroyuki Ito.
Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology,
Japanese Journal of Applied Physics,
Vol. 61,
SC1081-1,
Mar. 2022.
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Munehiro Ogasawara,
Ryoichiro Yoshida,
Yuta Oshima,
Motoki Ando,
Arisa Kimura,
Kenji Hirakawa,
Masayuki Iwase,
Shinsuke Nabeya,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage,
Japanese Journal of Applied Physics,
Vol. 60,
104501-1,
Dec. 2021.
International Conference (Reviewed)
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Arisa Kimura,
Kaito Kuroki,
Ryoichiro Yoshida,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
CMOS Inverter-Base Ring Oscillator Design and Evaluation Against gray Total Ionizing Dose Effect,
International Conference on Solid State Devices and Materials,
International Conference on Solid State Devices and Materials,
Sept. 2022.
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Takashi Yoda,
Noboru Ishihara,
Yuta Oshima,
Motoki Ando,
Ryoichiro Yoshida,
Shinsuke Nabeya,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Hiroyuki Ito.
CMOS 2-D Array Data Transfer Circuit Design and Evaluation for Use in A Radiation Environment,
SSDM2021,
July 2021.
Domestic Conference (Reviewed)
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Ryoichiro Yoshida,
Arisa Kimura,
Motoki Ando,
Yuta Oshima,
Shinsuke Nabeya,
Kenji Hirakawa,
Masayuki Iwase,
Noboru Ishihara,
Munehiro Ogasawara,
Takashi Yoda,
Hiroyuki Ito.
ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計,
DAシンポジウム2021,
情報処理学会シンポジウムシリーズ,
情報処理学会,
Sept. 2021.
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Arisa Kimura,
Ryoichiro Yoshida,
Motoki Ando,
Yuta Oshima,
Shinsuke Nabeya,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Effect of γ-ray irradiation on CMOS Ring-Oscillator and its factor analysis,
第34回 回路とシステムのワークショップ,
Aug. 2021.
International Conference (Not reviewed / Unknown)
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Kaito Kuroki,
Arisa Kimura,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect,
International Conference on Solid State Devices and Materials,
International Conference on Solid State Devices and Materials,
JJAP,
Sept. 2022.
Domestic Conference (Not reviewed / Unknown)
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Kaito Kuroki,
Arisa Kimura,
Ryoichiro Yoshida,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
CMOS集積回路におけるリーク電流への γ線照射の影響,
Mar. 2022.
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Arisa Kimura,
Kaito Kuroki,
Ryoichiro Yoshida,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Circuit modeling of the effect of γ-ray irradiation on ring oscillator IC,
Mar. 2022.
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Arisa Kimura,
Ryoichiro Yoshida,
Motoki Ando,
Yuta Oshima,
Shinsuke Nabeya,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Effect of γ-Ray Irradiation on CMOS Logic Circuits with Different P-Type and N-Type FET Size Ratios,
2021年 電子情報通信学会ソサイエティ大会,
Sept. 2021.
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Arisa Kimura,
Ryoichiro Yoshida,
Motoki Ando,
Yuta Oshima,
Shinsuke Nabeya,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Radiation hardness evaluation of ELT in Ring-oscillator,
第68回 応用物理学会春季学術講演会,
Mar. 2021.
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Ryoichiro Yoshida,
Arisa Kimura,
Motoki Ando,
Yuta Oshima,
Shinsuke Nabeya,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
高累積線量におけるMOSFETのゲートバイアス特性比較,
第81回 応用物理学会秋季学術講演会,
Sept. 2020.
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Motoki Ando,
Yuta Oshima,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Evaluation of TID effect in CMOS logic circuits,
2019年 電子情報通信学会総合大会,
Mar. 2019.
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Yuta Oshima,
Motoki Ando,
Kenji Hirakawa,
Masayuki Iwase,
Munehiro Ogasawara,
Takashi Yoda,
Noboru Ishihara,
Hiroyuki Ito.
Development of dynamic deterioration model of MOSFET under TID effect,
第66回 応用物理学会春季学術講演会,
Mar. 2019.
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