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Publication List - YASUYUKI MIYAMOTO 2010 (32 / 477 entries)
Journal Paper
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Toru Kanazawa,
kazuya wakabayashi,
Hisashi Saito,
Ryousuke Terao,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source,
Applied Physics Express,
Vol. 3,
No. 9,
094201,
Sept. 2010.
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H. Saito,
Y. Miyamoto,
K. Furuya.
Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2,
Applied Phys. Exp.,
vol. 3,
no. 8,
p. 084101,
Aug. 2010.
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C-I. Kuo,
H-T. Hsu,
Y-L. Chen,
C-Y. Wu,
E. Y. Chang,
Y. Miyamoto,
W-C. Tsern,
K. C. Sahoo.
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications,
IEEE Electron Device Letters,
vol. 31,
no. 7,
pp. 677-679,
July 2010.
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Y. Miyamoto,
S. Takahashi,
T. Kobayashi,
Hiroyuki Suzuki,
K. Furuya.
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector,
IEICE Trans. Electron.,
電子情報通信学会,
vol. E93C,
no. 5,
pp. 644-647,
May 2010.
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Chia-Ta Chang,
Heng-Tung Hsu,
Edward Yi Chang,
Chien-I Kuo,
Jui-Chien Huang,
Chung-Yu Lu,
Yasuyuki Miyamoto.
30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs,
IEEE Electron Device Letters,
Vol. 31,
No. 2,
pp. 105 - 107,
Feb. 2010.
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Takafumi Uesawa,
Masayuki Yamada,
Yasuyuki Miyamoto,
Kazuhito Furuya.
Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases,
Japanese Journal of Applied Physics,
応用物理学会,
Vol. 49,
024302,
Feb. 2010.
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Kuo,
C.-I.,
Hsu,
H.-T.,
Chang, E.Y.,
YASUYUKI MIYAMOTO,
Wu,
C.-Y.,
Chen,
Y.-L.,
Hsiao,
Y.-L..
DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology,
Japanese Journal of Applied Physics,
Vol. 49,
No. 1 Part 1,
2010.
International Conference (Reviewed)
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Chien-I Kuo,
Wee Chin Lim,
Heng-Tung Hsu,
Chin-Te Wang,
Li-Han Hsu,
Faiz Aizad,
Guo-Wei Hung,
Yasuyuki Miyamoto,
Edward Yi Chang.
Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate,
2010 International Conference on Enabling Science and Nanotechnology (ESciNano),
Dec. 2010.
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Toru Kanazawa,
Ryousuke Terao,
Yuutarou Yamaguchi,
Shunsuke Ikeda,
Yosiharu Yonai,
YASUYUKI MIYAMOTO.
InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer,
2010 International Conference on Solid State Devices and Materials,
pp. 129-130,
Sept. 2010.
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C.-T. Wang,
C.-I. Kuo,
W.-C. Lim,
L.-H. Hsu,
H.-T. Hsu,
Y. Miyamoto,
E.Y. Chang,
S.-P. Tsai,
Y.-S. Chiu.
An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications,
22nd Int. Conf. Indium Phosphide and Related Materials,
June 2010.
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M. Yamada,
T. Uesawa,
Y. Miyamoto,
K. Furuya.
Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density,
37th International Symposium on Compound Semiconductor,
June 2010.
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T. Kanazawa,
K. Wakabayashi,
H. Saito,
R. Terao,
T. Tajima,
S. Ikeda,
Y. Miyamoto,
K. Furuya.
Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut,
22nd Int. Conf. Indium Phosphide and Related Materials,
June 2010.
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Faiz Aizad,
Heng-Tung Hsu,
Chien-I Kuo,
Chien-Ying Wu,
Edward Yi Chang,
Yasuyuki Miyamoto,
Guo-Wei Huang,
Yu-Lin Chen,
Yu-Sheng Chiu.
Investigation Logic Performances of 80-nm HEMTs for InxGa1?xAs,
37th International Symposium on Compound Semiconductor,
June 2010.
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Y. Miyamoto,
T. Kanazawa,
H. Saito.
InGaAs MISFET with epitaxially grown source,
The 3rd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,
InGaAs MISFET with epitaxially grown source,
June 2010.
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H. Saito,
Y. Miyamoto,
K. Furuya.
Vertical InGaAs FET with hetero-launcher and undoped channel,
22nd Int. Conf. Indium Phosphide and Related Materials,
June 2010.
International Conference (Not reviewed / Unknown)
Domestic Conference (Not reviewed / Unknown)
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Toru Kanazawa,
Ryousuke Terao,
Yuutarou Yamaguchi,
Shunsuke Ikeda,
Yosiharu Yonai,
atsushi kato,
YASUYUKI MIYAMOTO.
InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate,
第71回応用物理学会学術講演会,
Sept. 2010.
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Ryousuke Terao,
Toru Kanazawa,
Shunsuke Ikeda,
Yosiharu Yonai,
atsushi kato,
YASUYUKI MIYAMOTO.
Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric,
第71回応用物理学会学術講演会,
Sept. 2010.
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YASUYUKI MIYAMOTO.
CI-2-2 HMET,HBTによるTHz波源(CI-2.テラヘルツ波源デバイスの現状と展望,依頼シンポジウム,ソサイエティ企画),
電子情報通信学会ソサイエティ大会講演論文集,
一般社団法人電子情報通信学会,
Vol. 2010,
No. 2,
pp. "SS-17"-"SS-18",
Aug. 2010.
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Toru Kanazawa,
kazuya wakabayashi,
Hisashi Saito,
Ryousuke Terao,
Tomonori Tajima,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
III-V族サブミクロンチャネルを有する高移動度MOSFET,
電気学会電子デバイス研究会,
Mar. 2010.
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Takashi Kobayashi,
Hiroyuki Suzuki,
Naoaki Takebe,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
SiO2細線埋め込みInP/InGaAs DHBTの作製,
第57回応用物理学関係連合研究会,
Mar. 2010.
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Hisashi Saito,
Tomoki Kususaki,
Yutaka Matsumoto,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
縦型InGaAs チャネルMISFET の極微細メサに向けた選択的ウェットエッチング,
第57回応用物理学関係連合研究会,
Mar. 2010.
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Ryousuke Terao,
Toru Kanazawa,
Hisashi Saito,
kazuya wakabayashi,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特,
第57回応用物理学関係連合研究会,
Mar. 2010.
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Yuji Isogai,
Takashi Kobayashi,
Yuutarou Yamaguchi,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Si基板上へ転写したInP系HBTの動作,
第57回応用物理学関係連合研究会,
Mar. 2010.
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kazuya wakabayashi,
Toru Kanazawa,
Hisashi Saito,
Ryousuke Terao,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性,
第57回応用物理学関係連合研究会,
Mar. 2010.
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Masayuki Yamada,
Takafumi Uesawa,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
HBTにおける高電流密度動作時エミッタ充電時間の電流反比例特性からの逸脱,
電子情報通信学会電子デバイス研究会,
電子情報通信学会技術研究報告 電子デバイス,
Jan. 2010.
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YASUYUKI MIYAMOTO.
テラヘルツ帯におけるトランジスタ,
応用物理学会応用電子物性分科会,
Jan. 2010.
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Toru Kanazawa,
kazuya wakabayashi,
Hisashi Saito,
Ryousuke Terao,
Tomonori Tajima,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric,
IEICE Technical Report, Electron Devices,
IEICE Technical Report, Electron Devices,
Vol. 109,
No. 360,
pp. 39-42,
Jan. 2010.
Other Publication
Patent
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