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Publication List - YASUYUKI MIYAMOTO 2009 (33 / 477 entries)
Journal Paper
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Chia-Yuan Chang,
Heng-Tung Hsu,
Edward Yi Chang,
Hai-Dang Trinh,
Yasuyuki Miyamoto.
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric,
Electrochemical and Solid-State Letters,,
vol. 12,
no. 12,
pp. H456-H459,
Dec. 2009.
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Chia-Yuan Chang,
Heng-Tung Hsu,
Edward Yi Chang,
YASUYUKI MIYAMOTO.
InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications,
Japanese Journal of Applied Physics,
Volume 48,
No. 4, Issue 2,
04C094 (3 pages),
Apr. 2009.
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Hisashi Saito,
Yasuyuki Miyamoto,
Kazuhito Furuya.
Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain,
Applied Physics Express,
The Japan Society of Applied Physics,
Vol. 2,
No. 3,
034501,
Mar. 2009.
Book
International Conference (Reviewed)
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YASUYUKI MIYAMOTO.
Vertical InGaAs FET with hetero-launcher and undoped channel,
International Symposium on Advanced Nanodevices and Nanotechnology (ISANN),
Dec. 2009.
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Toru Kanazawa,
Hisashi Saito,
Kazuya Wakabayashi,
Ryousuke Terao,
Tomonori Tajima,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region,
2009 International Conference on Solid State Devices and Materials,
pp. 246-247,
Oct. 2009.
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Takafumi Uesawa,
Masayuki Yamada,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases,
Topical Workshop on Heterostructure Materials (TWHM2009),
Aug. 2009.
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YASUYUKI MIYAMOTO,
Hiroaki Yamashita,
Naoaki Takebe,
KAZUHITO FURUYA.
In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO2 Wire,
Topical Workshop on Heterostructure Materials (TWHM2009),
Aug. 2009.
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YASUYUKI MIYAMOTO,
Shinnosuke Takahashi,
Takashi Kobayashi,
Hiroyuki Suzuki,
KAZUHITO FURUYA.
Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector,
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD),
June 2009.
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H. Saito,
Y. Miyamoto,
K. Furuya.
Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel,
IEEE 21th Conference on Indium Phosphide and Related Materials,
311,
May 2009.
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Toru Kanazawa,
KAZUHITO FURUYA,
YASUYUKI MIYAMOTO,
Hisashi Saito,
kazuya wakabayashi,
Tomonori Tajima.
InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source,
IEEE 21th Conference on Indium Phosphide and Related Materials,
May 2009.
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Chien-I Kuo,
Heng-Tung Hsu,
Chung Li,
Chien Ying Wu,
Edward Yi Chang,
YASUYUKI MIYAMOTO,
Y.-L. Chen,
D. Biswas.
A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT,
IEEE 21th Conference on Indium Phosphide and Related Materials (IPRM'09),
May 2009.
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Edward Yi Chang,
Chien-I Kuo,
Heng-Tung Hsu,
YASUYUKI MIYAMOTO,
Chia Ta Chang,
Chien Ying Wu.
Evaluation of InAs QWFET for Low Power Logic applications,
Semiconductor Technologies meeting,ECS Transactions Vol. 12, 7th ISTC/CISC Emerging,
Mar. 2009.
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YASUYUKI MIYAMOTO.
InGaAs MISFET with hetero-laucher,
2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices",
Mar. 2009.
International Conference (Not reviewed / Unknown)
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H. Saito,
Y. Miyamoto,
K. Furuya.
Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel,
Int. Symposium on Silicon Nano Devices in 2030,
Oct. 2009.
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YASUYUKI MIYAMOTO.
InGaAs/InP MISFET,
Int. Symposium on Silicon Nano Devices in 2030,
Oct. 2009.
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K. Wakabayashi,
T. Kanazawa,
H. Saito,
R. Terao,
S. Ikeda,
Y. Miyamoto,
K. Furuya.
InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure,
Int. Symposium on Silicon Nano Devices in 2030,
Oct. 2009.
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YASUYUKI MIYAMOTO,
Toru Kanazawa,
Hisashi Saito,
KAZUHITO FURUYA.
InGaAs/InP MISFET with epitaxially grown source,
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD),
June 2009.
Domestic Conference (Not reviewed / Unknown)
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Toru Kanazawa,
Hisashi Saito,
kazuya wakabayashi,
Tomonori Tajima,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
High mobility III-V MOSFET with n+-source regrown by MOSFET,
電気学会 電子・情報・システム部門大会,
Sept. 2009.
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Naoaki Takebe,
Hiroaki Yamashita,
Shinnosuke Takahashi,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング,
第70回応用物理学会学術講演会,
Sept. 2009.
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Masayuki Yamada,
Takafumi Uesawa,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
HBTにおける超高速動作時エミッタ充電時間の理論的解析,
第70回応用物理学会学術講演会,
Sept. 2009.
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kazuya wakabayashi,
Toru Kanazawa,
Hisashi Saito,
Tomonori Tajima,
Ryousuke Terao,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性,
第70回応用物理学会学術講演会,
Sept. 2009.
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Hisashi Saito,
Tomoki Kususaki,
Yutaka Matsumoto,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFET の高駆動能力動作,
第70回応用物理学会学術講演会,
Sept. 2009.
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Tomoki Kususaki,
Hisashi Saito,
Yutaka Matsumoto,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
縦型InGaAs-MISFETの試作,
第70回応用物理学会学術講演会,
Sept. 2009.
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Kazuya Wakabayashi,
Toru Kanazawa,
Hisashi Saito,
Tomonori Tajima,
Ryosuke Terao,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
I-V characteristics of undoped channel InP/InGaAs MOSFET with regrown source region,
The 70th Autumn Meeting, 2008; The Japan Society of Applied Physics,
pp. 1299,
Sept. 2009.
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Naoaki Takebe,
Hiroaki Yamashita,
Shinnosuke Takahashi,
Hisashi Saito,
Takashi Kobayashi,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング,
電子情報通信学会電子デバイス研究会,
June 2009.
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Takafumi Uesawa,
Masayuki Yamada,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Reduction of the base transit time in ultra-thin graded base InP/GaInAs Heterojunction Bipolar Transistor,
The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies,
Mar. 2009.
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Juntaro Minezaki,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Enhanced Possibility of Electron Wave Diffraction Observation with InP/GaInAs Phase-Shifter,
The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies,
Mar. 2009.
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YASUYUKI MIYAMOTO,
Toru Kanazawa.
III-V ナノデバイス,
電子情報通信学会2009年全国大会,
Mar. 2009.
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Hisashi Saito,
Tomoki Kususaki,
Yutaka Matsumoto,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel,
The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies,
1456,
Mar. 2009.
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Toru Kanazawa,
KAZUHITO FURUYA,
YASUYUKI MIYAMOTO,
Hisashi Saito,
kazuya wakabayashi,
Tomonori Tajima.
I-V characteristics of III-V MOSFET with MOVPE regrown source region,
The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies,
Mar. 2009.
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Hisashi Saito,
Toru Kanazawa,
Yasuyuki Miyamoto,
Kazuhito Furuya.
Fabrication of vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel,
Technical Meeting on Electron Devices, IEE Jpn.,
Mar. 2009.
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Takafumi Uesawa,
Masayuki Yamada,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor,
Technical Report of IEICE, Electron Devices,
Jan. 2009.
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