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Publication List - Takamasa Kawanago 2010 (11 / 94 entries)
Journal Paper
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Kuniyuki KAKUSHIMA,
Koichi Okamoto,
Tomotsune Koyanagi,
Miyuki Kouda,
Kiichi Tachi,
Takamasa Kawanago,
Jaeyeol Song,
Ahmet Parhat,
KAZUO TSUTSUI,
Nobuyuki Sugii,
takeo hattori,
HIROSHI IWAI.
Selection of rare earth silicates for highly scaled gate dielectrics,
Microelectronic Engineering,
Vol. 87,
No. 10,
pp. 1868-1871,
Oct. 2010.
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Kuniyuki KAKUSHIMA,
Kiichi Tachi,
M.Adachi,
Koichi Okamoto,
Soshi Sato,
Jaeyeol Song,
Takamasa Kawanago,
Ahmet Parhat,
KAZUO TSUTSUI,
Nobuyuki Sugii,
takeo hattori,
HIROSHI IWAI.
Interface and electrical properties of La-silicate for direct contact of high-k with silicon,
Solid-State Electronics,
Vol. 54,
pp. 715-719,
June 2010.
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Kuniyuki KAKUSHIMA,
Koichi Okamoto,
Tomotsune Koyanagi,
Miyuki Kouda,
Kiichi Tachi,
Takamasa Kawanago,
Jaeyeol Song,
Ahmet Parhat,
Hiroshi Nohira,
KAZUO TSUTSUI,
Nobuyuki Sugii,
takeo hattori,
HIROSHI IWAI.
SrO capping effect for La2O3/ Ce-Silicate gate dielectrics,
Microelectronics Reliability 50,
pp. 356-359,
Mar. 2010.
International Conference (Reviewed)
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Ahmet Parhat,
来山大祐,
金田 翼,
鈴木 拓也,
Tomotsune Koyanagi,
Miyuki Kouda,
M. Mamatrishat,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI.
Scaling of EOT Beyond 0.5nm,
ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010,
Nov. 2010.
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M. Mamatrishat,
Miyuki Kouda,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
A. Aierken,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
HIROSHI IWAI.
Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics,
ECS 218th Meeting,
Oct. 2010.
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Takamasa Kawanago,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks,
ESSDERC 2010, 40th European Solid-State Device Research Conference,
Sept. 2010.
International Conference (Not reviewed / Unknown)
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Kuniyuki KAKUSHIMA,
Tomotsune Koyanagi,
来山大祐,
Miyuki Kouda,
Jaeyeol Song,
Takamasa Kawanago,
M. Mamatrishat,
Kiichi Tachi,
M. K. Bera,
Ahmet Parhat,
Hiroshi Nohira,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
Keisaku Yamada,
HIROSHI IWAI.
Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability,
2010 Symposium on VLSI Technology,
June 2010.
Domestic Conference (Not reviewed / Unknown)
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鈴木 拓也,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用,
第71回応用物理学会学術講演会,
Sept. 2010.
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Kuniyuki KAKUSHIMA,
Tomotsune Koyanagi,
来山大祐,
Miyuki Kouda,
Jaeyeol Song,
Soshi Sato,
Takamasa Kawanago,
M. マイマイティ,
Kiichi Tachi,
M.K. Bera,
Ahmet Parhat,
Hiroshi Nohira,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
Keisaku Yamada,
HIROSHI IWAI.
LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御,
応用物理学会分科会 シリコンテクノロジー,
,野平博司,筒井一生,西山彰,杉井信之,名取研二,服部健雄,山田啓作,岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8(2010年7月22日 ),
No. 127,
pp. 4-8,
July 2010.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
酸素添加がWゲートMOSデバイスの電気特性に与える影響,
第57回応用物理学関係連合講演会,
第57回応用物理学関係連合講演会講演予稿集,
pp. 13-151,
Mar. 2010.
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Takamasa Kawanago,
鈴木 拓也,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric,
複合創造領域シンポジウム,
2010.
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