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松浦賢太朗 2018年 研究業績一覧 (21件 / 63件)
論文
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K. Matsuura,
J. Shimizu,
M. Toyama,
T. Ohashi,
I. Muneta,
S. Ishihara,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration,
IEEE Journal of the Electron Devices Society,
IEEE,
Vol. 6,
pp. 1251 - 1257,
Nov. 2018.
公式リンク
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J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
N. Ikarashi,
H. Wakabayashi,
N. Ikarashi.
Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing,
Journal of the Electron Devices Society,
Vol. 7,
No. 1,
p. 2,
Oct. 2018.
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M. Toyama,
T. Ohashi,
K. Matsuura,
J. Shimizu,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing,
JPN J APPL PHYS,
57,
07MA04,
June 2018.
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Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Investigation on Mo1-xWxS2 Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C4H9)2S2,
JPN J APPL PHYS,
57,
06HB04,
May 2018.
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N. Hayakawa,
Iriya Muneta,
Takumi Ohashi,
Kenntarou Matsuura,
Junnichi Shimizu,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Hitoshi Wakabayashi.
Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control,
Japan Journal of Applied Physics,
IOP Publishing,
Vol. 57,
04FP13,
Mar. 2018.
公式リンク
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K. Matsuura,
T. Ohashi,
I. Muneta,
S. Ishihara,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization,
Journal of Electrical Materials,
Springer US,
Vol. 47,
No. 7,
pp. 3497,
Mar. 2018.
国際会議発表 (査読有り)
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S. Ishihara,
Y. Hibino,
Y. Oyanagi,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Stimulating Raman Spectra of Sputtering Deposited Polycrystalline MoS2 Films by Phonon Confinement Model,
MRS Fall Meeting & Exhibit,
Nov. 2018.
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Y. Oyanagi,
Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Fabrication of WS2 Film by DC Bias Applied High-Temperature Sputtering,
MRS Fall Meeting & Exhibit,
Nov. 2018.
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M. Hamada,
K. Matsuura,
T. Sakamoto,
H. Tanigawa,
T. Ohashi,
I. Muneta,
T. Hoshii,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film,
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),
Oct. 2018.
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T. Sakamoto,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
Y. Suzuki,
N. Ikarashi,
H. Wakabayashi.
Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy,
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),
Oct. 2018.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Centimeter-scale high-performance few-layer MoS2 fabricated by RF magnetron sputtering and subsequent post-deposition annealing,
International Conference on Solid State Devices and Materials,
Sept. 2018.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Low-temperature solid-phase crystallization of sputtering deposited quasi-layered MoS2 thin film,
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18),
Aug. 2018.
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Y. Hibino,
S. Ishihara,
Y. Oyanagi,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias,
ECS Transactions,
vol. 85,
no. 13,
531,
May 2018.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor,
MRS Spring Meeting & Exhibit,
Mar. 2018.
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K. Matsuura,
J. Shimizu,
M. Toyama,
T. Ohashi,
I. Muneta,
S. Ishihara,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate,
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM),
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings,
pp. 104-106,
Mar. 2018.
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Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Investigation of MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition,
MRS Spring Meeting & Exhibit,
Mar. 2018.
国内会議発表 (査読なし・不明)
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松浦 賢太朗,
清水 淳一,
外山 真矢人,
大橋 匠,
宗田 伊理也,
石原 聖也,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
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五十嵐 智,
松浦 賢太朗,
濱田 昌也,
谷川 晴紀,
坂本 拓朗,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
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谷川 晴紀,
松浦 賢太朗,
濱田 昌也,
坂本 拓朗,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
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坂本 拓朗,
大橋 匠,
松浦 賢太朗,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減,
Mar. 2018.
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大橋 匠,
坂本 拓朗,
松浦 賢太朗,
清水 淳一,
外山 真矢人,
石原 聖也,
日比野 祐介,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
Migration制御したスパッタリング法による2次元層状MoS2成膜,
第65回応用物理学会春季学術講演会,
Mar. 2018.
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