論文

• Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact, IEEE Journal of the Electron Devices Society, IEEE, Vol. 11, p. 15-21, Nov. 2022.  公式リンク  
  
• Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, Volume 61, June 2022.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP), Vol. 61, May 2022.
• Ryota Shibukawa, Sung Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films, Japanese Journal of Applied Physics, Volume 61, Apr. 2022.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBA05, Apr. 2021.
• S-L. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, T-K. Chung, E. Chang, K. Kakushima. Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering, Applied Physics Letters, Vol. 118, No. 8, Page 82902, Feb. 2021.
• Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. A possible origin of the large leakage current in ferroelectric Al1-xScxN films, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30907, Feb. 2021.
• Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui. N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation, Applied Physics Express (APEX), No. 2, pp. 21002, Jan. 2021.

国際会議発表 (査読有り)

• R. Shibukawa, S. -L. Tsai, T. Hoshii, H. Wakbayashi, K. Tsutsui, K. Kakushima. Thermal stability of ferroelectric AlScN films, International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation, International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• S. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.

国内会議発表 (査読なし・不明)

• 川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用, 第83回応用物理学会秋季学術講演会, Sept. 2022.

学位論文

• A Study on Reliability and Scalability of Ferroelectric AlScN Films,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2023/03/26,   
• A Study on Reliability and Scalability of Ferroelectric AlScN Films,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2023/03/26,   
• A Study on Reliability and Scalability of Ferroelectric AlScN Films,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2023/03/26,   

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