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Publication List - Yota Takamura 2011 (18 / 244 entries)
Journal Paper
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Y. Takamura,
S. Sugahara.
Analysis and Design of Hanle-Effect Spin Transistors at 300 K,
IEEE Magn. Lett.,
Vol. 2,
pp. 3000404/1-4,
Oct. 2011.
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Y. Takamura,
T. Sakurai,
R. Nakane,
Y. Shuto,
S. Sugahara.
Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing,
J. Appl. Phys.,
American Institute of Physics,
Vol. 109,
no. 7,
pp. 07B768/1-3,
Apr. 2011.
International Conference (Reviewed)
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Y. Takamura,
S. Sugahara.
Analysis and design of Hanle-effect spin-transistor,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
pp. 125-126,
Oct. 2011.
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Y. Takamura,
K. Hayashi,
Y. Shuto,
S. Sugahara.
Formation and structural analysis of half-metallic Co2FeSi/SiOxNy/Si contacts with radical-oxynitridation-SiOxNy tunnel barrier,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
paper P-40,
pp. 127-128,
Oct. 2011.
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M. Satoh,
Y. Takamura,
S. Sugahara.
Preparation and characterization of L21-ordered full-Heusler Co2FeSi1-xAlx alloy thin films formed by rapid thermal annealing,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
paper P-41,
pp. 129-130,
Oct. 2011.
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Y. Takamura,
S. Sugahara.
Analysis of the Hanle effect in Si MOS inversion channels at 300K,
56th Annual Conf. on Magnetism and Magnetic Materials (MMM),
HB-12,
pp. 548-529,
Oct. 2011.
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T. Okishio,
Y. Takamura,
S. Sugahara.
Low-barrier ferromagnet source/drain MOSFETs using CoFe/Mg/AlOx/Si depinning contacts,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
paper P-42,
pp. 131-132,
Oct. 2011.
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T. Okishio,
Y. Takamura,
S. Sugahara.
Fabrication of spin-MOSFETs using CoFe/Mg/AlOx/Si tunnel junctions for the source and drain,
International Conf. on Solid State Devices and Materials (SSDM),
J-4-4,
p. 31,
Sept. 2011.
Official location
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M. Satoh,
Y. Takamura,
S. Sugahara.
Characterization of L21-ordered full-Heusler Co2FeSi1-xAlx alloy thin films formed by silicidation technique employing a silicon-on-insulator substrate,
Electronic Materials Conf. (EMC) 2011,
DD-10,
p. 96,
June 2011.
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Y. Takamura,
K. Hayashi,
Y. Shuto,
S. Sugahara.
Formation of half-metallic tunnel junctions of Co2FeSi/SiOxNy/Si using radical oxynitridation technique,
Electronic Materials Conf. (EMC) 2011,
DD-9,
p. 96,
June 2011.
International Conference (Not reviewed / Unknown)
Domestic Conference (Not reviewed / Unknown)
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Takao Okishio,
Yota Takamura,
SATOSHI SUGAHARA.
CoFe/Mg/AlOx/Siデピン接合を用いた低バリア強磁性ソース/ドレインMOSFET,
第16回半導体スピン工学の基礎と応用(PASPS-16),
p. 75,
Nov. 2011.
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Yota Takamura,
Kengo Hayashi,
Taijiro Kagei,
Yusuke Shuto,
SATOSHI SUGAHARA.
ラジカル酸窒化膜を用いたCFS/SiOxNy/Siトンネル接合の形成と構造評価,
第16回半導体スピン工学の基礎と応用(PASPS-16),
p. 41,
Nov. 2011.
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Yota Takamura,
Kengo Hayashi,
Yusuke Shuto,
Satoshi Sugahara.
Formation of Co2FeSi/SiOxNy/Si tunnel junctions using radical oxinitradation technique,
The 72nd Fall Meeting, 2011,
31p-ZS-12,
Sept. 2011.
Official location
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Yota Takamura,
Satoshi Sugahara.
Analysis of the Hanle effect in spin-MOSFETs,
The 72nd Fall Meeting, 2011,
2p-P-24,
Sept. 2011.
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Takao Okishio,
Yota Takamura,
SATOSHI SUGAHARA.
CoFe/Mg/AlOx/Siトンネル構造をソース/ドレインに用いたスピンMOSFETの作製,
第72回応用物理学会学術講演会,
1p-P10-25,
Aug. 2011.
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Kengo Hayashi,
Yota Takamura,
Yusuke Shuto,
SATOSHI SUGAHARA.
RTA法を用いたCo2FeSiの形成における初期多層膜構造の影響,
第58回応用物理学関係連合講演会,
25a-KM-10,
Mar. 2011.
Official location
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Mitsuhiro Satou,
Yota Takamura,
SATOSHI SUGAHARA.
Characterization of full-Heusler Co2FeSi1-xAlx alloy thin films formed by RTA,
第58回応用物理学関係連合講演会,
25a-KM-11,
Mar. 2011.
Official location
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