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Publication List - Kazuto Ohsawa (22 entries)
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Journal Paper
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Y. Miyamoto,
T. Kanazawa,
N. Kise,
H. Kinoshita,
K. Ohsawa.
Regrown Source/Drain in InGaAs Multi-Gate MOSFETs,
J. Crystal Growth,
vol. 522,
(2019)11-15,
Sept. 2019.
Official location
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K. Ohsawa,
S. Netsu,
N. Kise,
S. Noguchi,
Y. Miyamoto.
Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks,
Jpn. J. Appl. Phys.,
vol. 56,
no. 4S,
04CG05 2017,
Mar. 2017.
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K. Ohsawa,
A. Kato,
T. Kanazawa,
E. Uehara,
Y. Miyamoto.
Channel thickness dependence on InGaAs MOSFET with InP source for high current density,
IEICE Electronics Express,
vol. 11,
No. 14,
pp. 1-5,
July 2014.
International Conference (Reviewed)
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Y.Miyamoto,
T. Kanazawa,
N. Kise,
H. Kinoshita,
Kazuto Ohsawa.
Regrown Source / Drain in InGaAs Multi-Gate MOSFET,
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX),
P2-32,
June 2018.
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Toru Kanazawa,
Kazuto Ohsawa,
Tomohiro Amemiya,
Nobukazu Kise,
Ryosuke Aonuma,
Yasuyuki Miyamoto.
Fabrication of InGaAs Nanosheet Transistors with Regrown Source,
Compound Semiconductor Week (CSW2018),
We3C3.2,
May 2018.
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N. Kise,
S. Iwata,
R. Aonuma,
K. Ohsawa,
Y. Miyamoto.
GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature,
Compound Semiconductor Week 2017,
C804,
May 2017.
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K. Ohsawa,
N. Kise,
Y. Miyamoto.
Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks,
2016 International Conference on Solid State Devices and Materials (SSDM),
Sept. 2016.
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K. Ohsawa,
Y. Mishima,
Y. Miyamoto.
Operation of 13-nm channel length InGaAs-MOSFET with n-InP source,
27th International Conference on Indium Phosphide and Related Materials,
July 2015.
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K. Ohsawa,
A. Kato,
T. Sagai,
T. Kanazawa,
E. Uehara,
Y. Miyamoto.
Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density,
10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013),
2-9,
pp. 19-20,
Sept. 2013.
International Conference (Not reviewed / Unknown)
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Y. Miyamoto,
T. Kanazawa,
Y. Yonai,
K. Ohsawa,
Y. Mishima,
M. Fujimatsu,
K. Ohashi,
S. Nestu,
S. Iwata.
InGaAs channel for low supply voltage,
2015 International Conference on Solid State Devices and Materials (SSDM),
Sept. 2015.
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Y. Miyamoto,
T. Kanazawa,
Y. Yonai,
K. Ohsawa,
Y. Mishima,
T. Irisawa,
M. Oda,
T. Tezuka.
(Invited) Growth Process for High Performance of InGaAs MOSFETs,
72nd Device Research Conference (DRC),
June 2014.
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Y. Miyamoto,
T. Kanazawa,
Y. Yonai,
A. Kato,
M. Fujimatsu,
M. Kashiwano,
K. Ohsawa,
K. Ohashi.
(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications,
26th International Conference on InP and Related Materials (IPRM 2014),
May 2014.
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Y. Miyamoto,
T. Kanazawa,
Y. Yonai,
A. Kato,
K. Ohsawa,
M. Oda,
T. Irisawa,
T. Tezuka.
Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density,
44th IEEE Semiconductor Interface Specialists Conference (SICS 2013),
Dec. 2013.
Domestic Conference (Not reviewed / Unknown)
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Toru Kanazawa,
Kazuto Ohsawa,
Tomohiro Amemiya,
Nobukazu Kise,
Ryousuke Aonuma,
YASUYUKI MIYAMOTO.
InGaAsナノシートトランジスタの作製,
第65回応用物理学会春季学術講演会,
18a-G203-3,
Mar. 2018.
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Kazuto Ohsawa,
Toru Kanazawa,
Nobukazu Kise,
Tomohiro Amemiya,
YASUYUKI MIYAMOTO.
InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発,
第78回応用物理学会秋季学術講演会,
No. 8a-S22-2,
Sept. 2017.
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Kazuto Ohsawa,
Shinji Noguchi,
Netsu Seikou,
Nobukazu Kise,
YASUYUKI MIYAMOTO.
[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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Kazuto Ohsawa,
Shinji Noguchi,
Netsu Seikou,
Nobukazu Kise,
YASUYUKI MIYAMOTO.
HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響,
電子情報通信学会電子デバイス研究会,
信学技報,
vol. 116,
no. 431,
pp. 35-40,
Jan. 2017.
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Kazuto Ohsawa,
Nobukazu Kise,
YASUYUKI MIYAMOTO.
15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性,
第77回応用物理学会秋季学術講演会,
Sept. 2016.
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Kazuto Ohsawa,
Yuichi Mishima,
YASUYUKI MIYAMOTO.
InGaAs-MOSFETのチャネル長微細化に関する研究,
第62回応用物理学会春季学術講演会,
Mar. 2015.
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YASUYUKI MIYAMOTO,
Toru Kanazawa,
Yosiharu Yonai,
atsushi kato,
Motohiko Fujimatsu,
Masashi Kashiwano,
Kazuto Ohsawa,
Kazumi Ohashi.
低電圧/高速動作にむけたInGaAs MOSFETソース構造,
電子情報通信学会 電子デバイス研究会,
IEICE Technical Report,
Aug. 2014.
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Kazuto Ohsawa,
atsushi kato,
Takeru Sagai,
Toru Kanazawa,
Eiji Uehara,
YASUYUKI MIYAMOTO.
高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性,
第74回秋季応用物理学会学術講演会,
Sept. 2013.
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Takeru Sagai,
Eiji Uehara,
Kazuto Ohsawa,
YASUYUKI MIYAMOTO.
n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性,
2013年電子情報通信学会総合大会,
Mar. 2013.
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