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Publication List - Mayato Toyama (6 entries)
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International Conference (Reviewed)
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K. Matsuura,
J. Shimizu,
M. Toyama,
T. Ohashi,
I. Muneta,
S. Ishihara,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate,
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM),
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings,
pp. 104-106,
Mar. 2018.
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M. Toyama,
T. Ohashi,
K. Matsuura,
J. Shimizu,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing,
Advanced Metallization Conference 2017: 27th Asian Session,
Oct. 2017.
Official location
Domestic Conference (Not reviewed / Unknown)
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Kenntarou Matsuura,
Junnichi Shimizu,
Mayato Toyama,
Takumi Ohashi,
Takuro Sakamoto,
Iriya Muneta,
石原聖也,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
小椋厚志,
Hitoshi Wakabayashi.
大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用,
応用物理学会シリコンテクノロジー分科会第216回研究集会,
Feb. 2019.
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Kenntarou Matsuura,
Junichi Shimizu,
Mayato Toyama,
Takumi Ohashi,
Iriya Muneta,
石原 聖也,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Atsushi Ogura,
Hitoshi Wakabayashi.
大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
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Takumi Ohashi,
Takuro Sakamoto,
Kentaro Matsuura,
Junnichi Shimizu,
Mayato Toyama,
石原 聖也,
日比野 祐介,
Iriya Muneta,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Atsushi Ogura,
Hitoshi Wakabayashi.
Migration制御したスパッタリング法による2次元層状MoS2成膜,
65th JSAP Spring meeting,
Mar. 2018.
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Mayato Toyama,
Takumi Ohashi,
Kentaro Matsuura,
Junnichi Shimizu,
Iriya Muneta,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Hitoshi Wakabayashi.
スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性,
64th JSAP Spring meeting,
Mar. 2017.
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