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Publication List - Takamasa Kawanago 2012 (13 / 94 entries)
Journal Paper
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Takamasa Kawanago,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs,
Solid-State Electronics,
Vol. 74,
pp. 2-6,
Aug. 2012.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2,
IEEE ELECTRON DEVICE LETTERS,
Vol. 33,
No. 3,
pp. 423-425,
Mar. 2012.
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マイマイティ マイマイティレャアティ,
Miyuki Kouda,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
片岡 好則,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs,
Semiconductor Science and Technology,
Vol. 27,
No. 4,
Mar. 2012.
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H.D. Trinh,
Yueh-Chin Lin,
H.C. Wang,
C.H. Chang,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
Takamasa Kawanago,
Y.G. Lin,
C.M. Chen,
Y.Y.Wong,
G.N. Huang,
M. Hudait,
E.Y. Chang.
Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors,
Applied Physics Express,
Vol. 5,
No. 2,
pp. .021104-1-3,
Feb. 2012.
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Takamasa Kawanago,
鈴木 拓也,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process,
Solid-State Electronics,
Vol. 68,
pp. .68-72,
Feb. 2012.
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Takamasa Kawanago,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature,
IEEE Transactions on Electron Devices,
Vol. 59,
No. 2,
pp. 269-276,
Feb. 2012.
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Miranda Enrique,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
J. Sune,
HIROSHI IWAI.
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown,
Microelectronics Reliability,
Vol. 52,
pp. 1909-1912,
2012.
International Conference (Reviewed)
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E. Mranda,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
J. Sune,
HIROSHI IWAI.
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown,
ESREF2012,
[588] E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”, ESREF2012, October, 2012, Cagliari, Italy,
2012.
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T. Kawanago,
K. Kakushima,
P. Ahmet,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
K. Natori,
T. Hattori,
H. Iwai.
(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture,
42nd European Solid-State Device Research Conference (ESSDERC 2012),
2012.
International Conference (Not reviewed / Unknown)
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Nitrogen incorporated La-silicate gate dielectric with high scalability,
IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT,
2012.
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Kuniyuki KAKUSHIMA,
Yuya Suzuki,
ダリューシュザデ,
Takamasa Kawanago,
HIROSHI IWAI.
Development of Core Technologies for Green Nanoelectronics,
International Symposium on “Development of Core Technologies for Green Nanoelectronics”,
2012.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture,
ESSDERC 2012,
2012.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture,
ESSDERC 2012,
2012.
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