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Publication List - Iriya Muneta 2019 (19 / 148 entries)
Journal Paper
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Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization,
Journal of the Electron Devices Society (J-EDS),
IEEE,
Vol. 7,
No. 1,
pp. 1258-1263,
Dec. 2019.
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Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing,
Applied Physics Letters,
Vol. 115,
p. 192404,
Nov. 2019.
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Jaejun Kim,
Hiroyoshi Ohtsu,
Taizen Den,
Krittanun Deekamwong,
Iriya Muneta,
Masaki Kawano.
Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory,
Chemical Science,
Royal Society of Chemistry,
Vol. 10,
pp. 10888 - 10893,
Oct. 2019.
International Conference (Reviewed)
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H. Tanigawa,
K. Matsuura,
I. Muneta,
T. Hoshii,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks,
Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019),
Nov. 2019.
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Ryunosuke Otsuki,
Yuta Suzuki,
Takuro Sakamoto,
Takanori Shirokura,
Iriya Muneta,
Masahiro Nagao,
Hitoshi Wakabayashi,
Nobuyuki Ikarashi.
Structural analysis of MoS2 films fabricated by radiofrequency sputtering using highangle annular dark field scanning transmission electron microscopy,
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019),
Nov. 2019.
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Tomohiko Yamagishi,
Atsushi Hori,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET,
Int. Conf. on Solide State Devices and Materials (SSDM2019),
Sept. 2019.
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Iriya Muneta,
Naoki Hayakawa,
Takanori Shirokura,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Ferromagnetic tunnel devices with two-dimensional layered material MoS2,
Collaborative Conference on Materials Research (CCMR) 2019,
June 2019.
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K. Matsuura,
M. Hamada,
T. Hamada,
H. Tanigawa,
T. Sakamoto,
W. Cao,
K. Parto,
A. Hori,
I. Muneta,
T. Kawanago,
K. Kakushima,
K. Tsutsui,
A. Ogura,
K. Banerjee,
H. Wakabayashi.
Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration,
Int. Workshop on Juction Technology (IWJT2019),
June 2019.
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Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Katsumi Satoh,
Tomoko Matsudai,
Takuya Saraya,
Toshihiro Takakura,
Kazuo Itou,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Iriya Muneta,
Hitoshi Wakabayashi,
Akira Nakajima,
Shin-ichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs,
31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019),
May 2019.
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Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing,
3rd Electron Devices Technology and Manufactureing Conference (EDTM2019),
Mar. 2019.
International Conference (Not reviewed / Unknown)
Domestic Conference (Not reviewed / Unknown)
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Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Katsumi Satoh,
Tomoko Matsudai,
Takuya Saraya,
Toshihiko Takakura,
Kazuo Itou,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Iriya Muneta,
Hitoshi Wakabayashi,
Akira Nakajima,
Shin-ichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs,
電子情報通信学会 SDM(シリコン材料・デバイス)研究会,
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,
電子情報通信学会,
Vol. 119,
No. 273,
pp. 45-48,
Nov. 2019.
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Shinya Imai,
Masaya Hamada,
Satoshi Igarashi,
Iriya Muneta,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Hitoshi Wakabayashi.
硫化プロセスにおけるスパッタMoS2膜質向上の重要性,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing,
The 80th JSAP Autumn meeting,
Sept. 2019.
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Masaya Hamada,
Kentaro Matsuura,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Hitoshi Wakabayashi.
スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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Haruki Tanigawa,
Kentaro Matsuura,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Hitoshi Wakabayashi.
正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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Tomohiko Yamagishi,
Atsushi Hori,
Iriya Muneta,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Hitoshi Wakabayashi.
横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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Kenntarou Matsuura,
Masaya Hamada,
Takuro Sakamoto,
Haruki Tanigawa,
Iriya Muneta,
石原 聖也,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Atsushi Ogura,
Hitoshi Wakabayashi.
F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減,
第66回応用物理学会春期学術講演会,
Mar. 2019.
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Kenntarou Matsuura,
Junnichi Shimizu,
Mayato Toyama,
Takumi Ohashi,
Takuro Sakamoto,
Iriya Muneta,
石原聖也,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
小椋厚志,
Hitoshi Wakabayashi.
大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用,
応用物理学会シリコンテクノロジー分科会第216回研究集会,
Feb. 2019.
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