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筒井一生 2013年 研究業績一覧 (100件 / 898件)
論文
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"K. Tuokedaerhan",
"R. Tan,
K. Kakushima",
"P. Ahmet",
"Y. Kataoka",
"A. Nishiyama",
"N. Sugii",
"H. Wakabayashi",
"K. Tsutsui",
"K. Natori",
"T. Hattori",
"H. Iwai".
Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application,
Applied Physics Letters (APL),
Vol. 103,
Sept. 2013.
-
"Keita Takahashi",
"Kazuo Tsutsui".
Growth of Thin Epitaxial CaxSr1-xF2/SrF2 Layers with Low Leakage Current on Ge Substrates,
Japanese Journal of Applied Physics (JJAP),
Vol. 52,
No. 10R,
Sept. 2013.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
takeo hattori,
Kenji Natori,
HIROSHI IWAI.
Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure,
Solid-State Electronics,
Vol. 84,
pp. 53-57,
June 2013.
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Y. Wu,
竇春萌,
F. Wei,
Kuniyuki KAKUSHIMA,
大毛利健治,
パールハットアヘメト,
T. Watanabe,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
Keisaku Yamada,
片岡好則,
takeo hattori,
HIROSHI IWAI.
Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability,
Japanese Journal of Applied Physics,
Vol. 52,
No. 4S,
pp. 04CC28-1-04CC28-5,
Apr. 2013.
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DARYOUSH ZADEH,
Hiroshi Oomine,
Yuya Suzuki,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Hiroshi Nohira,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode,
Solid-State Electronics,
Vol. 82,
pp. 29-33,
Apr. 2013.
国際会議発表 (査読有り)
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Shuhei Hosoda,
Kamale Tuokedaerhan,
Kuniyuki Kakushima,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kenji Natori,
Hiroshi Iwai.
Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode,
224th ECS Meeting in San Francisco,
Oct. 2013.
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T. Seki,
T. Kawanago,
K. Kakushima,
P. Ahmet,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
K. Natori,
T. Hattori,
H. Iwai.
Electrical and Infrared Absorption Studies on La-silicate/Si Interface,
IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013),
Feb. 2013.
-
K. Tsutsui.
Analyses of Electrical Activation and Deactivation of Impurities Doped in Scaled-down Si Device Structures by X-ray Photoelectron Spectroscopy,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology 37 (WIMNACT-37),
Feb. 2013.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,
ESSDERC 2013,
2013.
-
ダリューシュザデ,
Hiroshi Oomine,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density,
2013 International Conference on Solid State Devices and Materials(SSDM),
2013.
-
unknown unknown,
shinichi kano,
竇春萌,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer,
2013 International Conference on Solid State Devices and Materials(SSDM),
2013.
-
DARYOUSH ZADEH,
Hiroshi Oomine,
Yuya Suzuki,
Kuniyuki KAKUSHIMA,
Hiroshi Nohira,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode,
2013.
国際会議発表 (査読なし・不明)
-
Hiroshi Oomine,
DARYOUSH ZADEH,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates,
ECS 224nd Meeting,
ECS Transactions,
Vol. 58,
No. 7,
pp. 385-389,
Oct. 2013.
-
Taichi Inamura,
佐々木亮人,
青木克明,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A stacked sputtered process for β-FeSi2 formation,
ECS 224nd Meeting,
ECS Transactions,
Oct. 2013.
-
Taichi Inamura,
佐々木亮人,
青木克明,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A stacked sputtered process for β-FeSi2 formation,
ECS 224nd Meeting,
ECS Transactions,
Oct. 2013.
-
Shuhei Hosoda,
K. Tuokedaerhan,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT,
ECS 224nd Meeting,
ECS Transactions,
Vol. 58,
No. 7,
pp. 61-64,
Oct. 2013.
-
宋 禛漢,
Kazuki Matsumoto,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
杉井信之,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation,
ECS 224nd Meeting,
ECS Transactions,
Vol. 58,
No. 7,
pp. 87-91,
Oct. 2013.
-
Ryuji Hosoi,
Yuya Suzuki,
ダリューシュザデ,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Wei Li,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface state density measurements of 3D silicon channel by charge pumping method,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
shinichi kano,
竇春萌,
unknown unknown,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Impact of metal electrode material on resistive switching properties of Ce oxides,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
田中祐樹,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Yuta Tamura,
吉原亮,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
A novel Ni silicidation technology for Schottky diode formation,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Kana Tsuneishi,
Miyuki Kouda,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical properties of Tm2O3 gate dielectric and its scaling issues,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Michihiro Hosoda,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Size dependent phonon limited electron mobility of Si nanowire,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Kazuki Matsumoto,
小山将央,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Ni silicidation for Si fin and nanowire structures,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
吉原亮,
Yuta Tamura,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical characterization of atomically flat NiSi2 Schottky diode,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Jun Kanehara,
Yusuke Takei,
Youhei Miyata,
Hiroshi Nohira,
Y. Izumi,
TAKAYUKI MURO,
木下豊彦,
パールハットアヘメト,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
takeo hattori,
HIROSHI IWAI.
Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Kouhei Akita,
Jun Kanehara,
Hiroshi Nohira,
Y. Izumi,
TAKAYUKI MURO,
木下豊彦,
パールハットアヘメト,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
takeo hattori,
HIROSHI IWAI.
[517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Tasuku Kaneda,
Miyuki Kouda,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure,
ECS 220th Meeting,
ECS Transactions,
Vol. 41,
No. 7,
pp. 157-164,
2013.
-
中島一裕,
Soshi Sato,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method,
ECS 220th Meeting,
ECS Transactions,
Vol. 41,
No. 7,
pp. 293-298,
2013.
-
中島一裕,
Soshi Sato,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method,
ECS 220th Meeting,
ECS Transactions,
Vol. 41,
No. 7,
pp. 293-298,
2013.
-
Yuta Tamura,
吉原亮,
Kuniyuki KAKUSHIMA,
中塚理,
パールハットアヘメト,
Hiroshi Nohira,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100),
15th International Conference on Thin Films,
2013.
-
Takamasa Kawanago,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure,
15th International Conference on Thin Films,
2013.
-
Yuya Suzuki,
ダリューシュザデ,
Ryuji Hosoi,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation,
15th International Conference on Thin Films,
2013.
-
shinichi kano,
竇春萌,
unknown unknown,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
片岡好則,
Kenji Natori,
Miranda Enrique,
takeo hattori,
HIROSHI IWAI.
Influence electrode materials on CeOx based resistive switching,
CSTIC 2012,
2013.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface properties of La-silicate gate dielectrics on Si(110)surface,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
unknown unknown,
shinichi kano,
竇春萌,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
unknown unknown,
shinichi kano,
竇春萌,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
unknown unknown,
shinichi kano,
竇春萌,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
unknown unknown,
shinichi kano,
竇春萌,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
K. Tuokedaerhan,
Shuhei Hosoda,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Wei Li,
中島一裕,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Extraction of Interface State Density of 3-dimensional Si channel,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Jiangning Chen,
鹿 国強,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Jiangning Chen,
鹿 国強,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Jiangning Chen,
鹿 国強,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
shinichi kano,
竇春萌,
unknown unknown,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Transient Switching Characteristics of Ce-oxide Resistive Switching Devices,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Yuya Suzuki,
ダリューシュザデ,
Hiroshi Oomine,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
田中祐樹,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface controlled metal contact for n-type diamonds,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Yuta Tamura,
吉原亮,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Stacked Ni-Silicidation Process for Schottky Barrier FET,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Kana Tsuneishi,
Jiangning Chen,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Kazuki Matsumoto,
小山将央,
Y. Wu,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Size dependent resistivity change of Ni-silicides in nano-region,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Yang Zhao,
マイマイティ マイマイティレャアティ,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Separation of bulk and interface traps of La-silicate on Si(100) surface,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Yang Zhao,
マイマイティ マイマイティレャアティ,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Separation of bulk and interface traps of La-silicate on Si(100) surface,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Yang Zhao,
マイマイティ マイマイティレャアティ,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Separation of bulk and interface traps of La-silicate on Si(100) surface,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Taichi Inamura,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Formation of Fe-silicides using Multi-Stacking Sputtering Process,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Taichi Inamura,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Formation of Fe-silicides using Multi-Stacking Sputtering Process,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Hiroshi Oomine,
ダリューシュザデ,
Yuya Suzuki,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Hiroshi Oomine,
ダリューシュザデ,
Yuya Suzuki,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
関拓也,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Infrared absorption study of La-silicate gate dielectrics,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Atsushi Takemasa,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Impact of Surface Treatments for Metal Contact on p-type Diamonds,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Shuhei Hosoda,
K. Tuokedaerhan,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
吉原亮,
Yuta Tamura,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
A Novel Ohmic Contact Process for n-Ge Substrates,
R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
宋 禛漢,
小山将央,
Kazuki Matsumoto,
Kuniyuki KAKUSHIMA,
中塚理,
大毛利健治,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Keisaku Yamada,
HIROSHI IWAI.
Atomically flat Ni-silicide/Si interface using NiSi2 sputtering,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
Mari Okamoto,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), February 18, 2013, , Japan,
2013.
-
関拓也,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
International Symposium on Next-Generation Electronics(ISNE 2013),
International Symposium on Next-Generation Electronics(ISNE 2013),
2013.
-
Kazuki Matsumoto,
小山将央,
Y. Wu,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width,
International Symposium on Next-Generation Electronics(ISNE 2013),
2013.
-
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
HIROSHI IWAI.
Interface State Density of Passivation/Nanowire Interface,
The 1st International Symposium on Nano-Wire Si Solar Cells/ MEXT “FUTURE-PV Innovation” Project,
2013.
-
Kuniyuki KAKUSHIMA,
吉原亮,
KAZUO TSUTSUI,
HIROSHI IWAI.
A Low Temperature Ohmic Contact Process for n-type Ge Substrates,
2013 13th International Workshop on Junction Technology(IWJT2013),
2013.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface properties of La-silicate gate dielectrics on Si(110)surface,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
-
小山将央,
Naoto Shigemori,
Kenji Ozawa,
Kiichi Tachi,
Kuniyuki KAKUSHIMA,
O. Nakatsuka,
大毛利健治,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Keisaku Yamada,
HIROSHI IWAI.
Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source,
41st European Solid-State Device Research Conference,
2013.
-
Kuniyuki KAKUSHIMA,
Jun Kanehara,
takeo hattori,
KAZUO TSUTSUI,
HIROSHI IWAI.
Boron depth profile of a plasma immersed substrate by XPS analysis,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Nitrogen incorporated La-silicate gate dielectric with high scalability,
[G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
マイマイティ マイマイティレャアティ,
関拓也,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
unknown unknown,
A. Ablimit,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electron transport in ballistic diodes: influence of phonon generation in drain region,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
DARYOUSH ZADEH,
Yuya Suzuki,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Characterization of metal Schottky junction for InGaAs substrate,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
竇春萌,
Soshi Sato,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Si nanowire FET with asymmetric channel,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Y. Wu,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
An analytical model of a tunnel FET with Schottky junction,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
K.Tuokedaerhan,
金田翼,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Impact of annealing ambient for La2O3/Si capacitor,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
来山大祐,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
[Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
中島一裕,
Wei Li,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface state density measurements of 3D silicon channel by charge pumping method,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
中島一裕,
Wei Li,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
杉井信之,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface state density measurements of 3D silicon channel by charge pumping method,
G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
-
Takamasa Kawanago,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET,
41st European Solid-State Device Research Conference,
2013.
国内会議発表 (査読なし・不明)
-
石川昂,
小路智也,
角嶋邦之,
若林整,
片岡好則,
西山彰,
杉井信之,
筒井一生,
名取研二,
岩井洋.
チャージポンピング法を用いた三次元Si構造の界面準位密度測定,
第74回応用物理学会秋季学術講演会,
2013.
-
米澤宏昭,
中島 昭,
西澤 伸一,
大橋 弘通,
筒井一生,
角嶋邦之,
若林整,
岩井洋.
AlGaN/GaN系pチャンネルHFETの製作,
第74回応用物理学会秋季学術講演会,
2013.
-
武井優典,
神谷真行,
寺山一真,
米澤宏昭,
齋藤 渉,
筒井一生,
角嶋邦之,
若林整,
片岡好則,
岩井洋.
AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
神谷真行,
寺山一真,
武井優典,
齋藤 渉,
角嶋邦之,
若林整,
片岡好則,
筒井一生,
岩井洋.
AlGaN/GaN HEMTへの凹凸AlGaN層導入による2次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性,
第74回応用物理学会秋季学術講演会,
2013.
-
大橋匠,
若林整,
角嶋邦之,
杉井信之,
西山彰,
片岡好則,
名取研二,
筒井一生,
岩井洋.
単層MoS2チャネルを用いたn-MOSFETの性能見積もり,
[第74回応用物理学会秋季学術講演会,
2013.
-
松川佳弘,
岡本真里,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋,
齋藤渉.
AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
嘉藤貴史,
稲村太一,
佐々木 亮人,
青木 克明,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究,
第74回応用物理学会秋季学術講演会,
2013.
-
劉 璞誠,
米澤宏昭,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
AlGaNのドライエッチングへのBcl3の影響に関する研究,
第74回応用物理学会秋季学術講演会,
2013.
-
譚錫昊,
岡本真里,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
元木雅章,
吉原亮,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
宗清修,
川那子高暢,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響,
第74回応用物理学会秋季学術講演会,
2013.
-
長谷川明紀,
呉研,
宋 禛漢,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上,
第74回応用物理学会秋季学術講演会,
2013.
-
中村嘉基,
細田修平,
Tuokedaerhan Kamale,
角嶋邦之,
片岡好則,
西山彰,
若林整,
杉井信之,
筒井一生,
名取研二,
岩井洋.
W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価,
第74回応用物理学会秋季学術講演会,
2013.
-
小路智也,
石川昂,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定,
第74回応用物理学会秋季学術講演会,
2013.
-
岡本真里,
松川佳弘,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化,
第74回応用物理学会秋季学術講演会,
2013.
-
今村浩章,
稲村太一,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価,
第74回応用物理学会秋季学術講演会,
2013.
-
鹿国強,
大嶺洋,
ザデハサン ダリユーシユ,
角嶋邦之,
西山彰,
杉井信之,
片岡好則,
若林整,
筒井一生,
名取研二,
岩井洋.
ALD堆積条件によるLa2O3/In0.53Ga0.47Asキャパシタの電気特性への影響,
第74回応用物理学会秋季学術講演会,
2013.
-
宋 禛漢,
松本一輝,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
服部健雄,
岩井洋.
Niシリサイドナノワイヤ抵抗率のNi膜厚依存性,
第74回応用物理学会秋季学術講演会,
2013.
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