論文

• Kiichi Tachi, N. Vulliet, S. Barraud, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Cristoloveanu, T. Ernst. Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET”, Solid-State Electronics, Vol. 65-66, pp. 16-21, Nov. 2011.
• Kiichi Tachi, S. Barraud, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Cristoloveanu, T. Ernst. Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs, Microelectronics Reliability, Vol. 51, pp. 885-888, May 2011.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of rare earth silicates for highly scaled gate dielectrics, Microelectronic Engineering, Vol. 87, No. 10, pp. 1868-1871, Oct. 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, M.Adachi, Koichi Okamoto, Soshi Sato, Jaeyeol Song, Takamasa Kawanago, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Interface and electrical properties of La-silicate for direct contact of high-k with silicon, Solid-State Electronics, Vol. 54, pp. 715-719, June 2010.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. SrO capping effect for La2O3/ Ce-Silicate gate dielectrics, Microelectronics Reliability 50, pp. 356-359, Mar. 2010.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, Kiichi Tachi, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric, Solid-State Electronics, Vol. 54, pp. 720-723, 2010.
• Tomotsune Koyanagi, Kiichi Tachi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation, Japanese Journal of Applied Physics, Vol. 48, 2009.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, Jaeyeol Song, Soshi Sato, Hiroshi Nohira, E. Ikenaga, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film, JOURNAL OF APPLIED PHYSICS, [ 145] K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui, N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009, Vol. 106, 2009.
• Kuniyuki KAKUSHIMA, K. Okamoto, M. Adachi, Kiichi Tachi, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion, SOLID-STATE ELECTRONICS, Vol. 52, pp. 1280-1284, 2008.
• Soshi Sato, Kiichi Tachi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Thermal-stability improvement of LaON thin film formed using nitrogen radicals, Microelectronic Engineering, Vol. 84, pp. 1894-1897, 2007.
• Takamasa Kawanago, Kiichi Tachi, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application, Microelectronic Engineering, Vol. 84, pp. 2335-2338, 2007.

国際会議発表 (査読有り)

• Kiichi Tachi, M. Casse, S. Barraud, C. Dupre, A. Hubert, N. Vulliet, M.E. Faivre, C. Vizioz, C. Carabasse, V. Delaye, J.M. Hartmann, HIROSHI IWAI, S. Cristoloveanu, O. Faynot, T. Ernst. Experimental study on carrier transport limiting phenomena in 10 nm width nanowire CMOS transistors, 2010 IEDM, Dec. 2010.
• Kiichi Tachi, N. Vulliet, S. Barraud, B. Guillaumot, V. Maffini-Alvaro, C. Vizioz, C. Arvet, Y. Campidelli, P. Gautier, J.M. Hartmann, T. Skotnicki, S. Cristoloveanu, HIROSHI IWAI. 3D Source/Drain Doping Optimization in Multi-Channel MOSFET, ESSDERC 2010, 40th European Solid-State Device Research Conference, Sept. 2010.
• Kiichi Tachi, M.Casse, D.Jang, C.Dupre, A.Hubert, N.Vulliet, C. Maffini-Alvaro, C. Vizioz, C. Carabasse, V. Delaye, J.M.Hartmann, G.Ghibaudo, HIROSHI IWAI, S. Cristoloveanu, O. Faynot, T.Ernst. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires, IEDM 2009, Dec. 2009.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Kiichi Tachi, Miyuki Kouda, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm, ESSDERC 2009, 39th European Solid-State Device Research Conference, p. 403, Sept. 2009.
• M. Kouda, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Okamoto, K. Tachi, S. Sato, J. Song, T. Kawanago, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Impact of Thin La2O3 Insertion for HfO2 MOSFET, 213th ECS Meeting, May 2008.
• Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007), Nov. 2007.
• K.Tachi, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer, ECS Transactions, The Electrochmical Society, Vol. 11, No. 4, pp. 191-198, Oct. 2007.
• K. Tachi, H. Iwai, T. Hattori, N. Sugii, K. Tsutsui, P. Ahemt, K. Kakushima. Effect of Oxygen for Ultra-Thin La2O3 Film Deposition, 2006 Joint International Meeting of ECS, Oct. 2006.
• J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, I. Hiroshi. Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2, 2006 Joint International Meeting of ECS, Oct. 2006.
• H. Nohira, T. Matsuda, K. Tachi, Y. Shiino, J. Song, Y. Kuroki, J. Ng, P. Ahmet, K. Kakushima, K. Tsutsui, E. Ikenaga, K. Kobayashi, H. Iwai, T. Hattori. Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer, 2006 Joint International Meeting of ECS, Oct. 2006.

国内会議発表 (査読有り)

• 藤澤 宏樹, 舘 喜一, 角嶋 邦之, パールハット・アヘメト, 筒井 一生, 杉井 信之, 服部 健雄, 岩井 洋. Alキャップ層がW/La2O3/Si MOS構造の電気特性に及ぼす影響, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 821, Sept. 2007.
• 佐藤創志, 舘喜一, 宋在烈, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. ラジカル窒化によるLa_2O3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）, 電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス, 電子情報通信学会, Vol. 107, No. 85, pp. 71-74, May 2007.

国際会議発表 (査読なし・不明)

• 小山将央, Naoto Shigemori, Kenji Ozawa, Kiichi Tachi, Kuniyuki KAKUSHIMA, O. Nakatsuka, 大毛利健治, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source, 41st European Solid-State Device Research Conference, 2013.
• Kiichi Tachi, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Cristoloveanu, T. Ernst. Characterization of carrier transport in vertically-stacked Si nanowire FETs, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, 来山大祐, Miyuki Kouda, Jaeyeol Song, Takamasa Kawanago, M. Mamatrishat, Kiichi Tachi, M. K. Bera, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, Keisaku Yamada, HIROSHI IWAI. Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability, 2010 Symposium on VLSI Technology, June 2010.
• Kiichi Tachi, T Ernst, C Dupre, A Hubert, S Becu, HIROSHI IWAI, S Cristoloveanu, O Faynot. Transport Optimization with Width Dependence of 3D-stacked GAA Silicon Nanowire FET with High-k/Metal Gate Stack, 2009 Silicon Nanoelectronics Workshop, June 2009.

国内会議発表 (査読なし・不明)

• 角嶋邦之, 小柳友常, 来山大祐, 幸田みゆき, 宋在烈, 佐藤創志, 川那子高暢, M. マイマイティ, 舘喜一, M.K. Bera, パールハットアヘメト, 野平博司, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 山田啓作, 岩井洋. LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御, 応用物理学会分科会 シリコンテクノロジー, ，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）, No. 127, pp. 4-8, July 2010.
• 舘喜一, 角嶋邦之, T. Ernst, S. Cristoloveanu, 岩井洋. Vertically-Stacked Nanowire Transistors for future CMOS, 複合創造領域シンポジウム, 2010.
• 宋在烈, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 840, Mar. 2009.
• 船水清永, 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 703, Sept. 2008.
• 宋在烈, 舘喜一, 岡本晃一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 北村 幸司, 舘喜一, 角嶋邦之, 野平 博司, 岩井洋. HfLaOx/SiO2/Siの組成分布に及ぼす熱処理の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.
• 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeO2/La2O3積層ゲート絶縁膜の電気特性評価, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 850, Mar. 2008.
• 岡本晃一, 舘喜一, 足立学, 佐藤創志, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会 予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.
• 足立学, 岡本晃一, 舘喜一, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 2, pp. 849, Mar. 2008.

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