論文

• J. A. Ng, Y. Kuroki, N. Sugii, K. Kakushima, S.-I. Ohmi, K. Tsutsui, T. Hattori, H. Iwai, H. Wong. Effects of low temperature annealing on the ultrathin La₂O₃ gate dielectric; comparison of post deposition annealing and post metallization annealing, Microelectronic Engineering, Vol. 80, pp. 206-209, 2005.
• So Watanabe, Motoki Maeda, Tsuyoshi Sugisaki, Kazuo Tsutsui. Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process, Japanese Journal of Applied Physics, Vol. 44, No. 4B, pp. 2637-2641, 2005.
• Y. Sasaki, C.G. Jin, K. Okashita, H. Tamura, H. Ito, B. Mizuno, H. Sauddin, R. Higaki, T. Satoh, K. Majima, Y. Fukagawa, K. Takagi, I. Aiba, S. Ohmi, K. Tsutsui, H. Iwai. New method of Plasma doping with in-situ Helium pre-amorphization, Nuclear Instruments and Methods in Physics Research B, Vol. 237, pp. 41-45, 2005.
• C.G. Jin, Y. Sasaki, K. Okashita, H. Tamura, H. Ito, B. Mizuno, K. Tsutsui, S. Ohmi, H. Iwai. Ultra shallow p⁺/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation, Nuclear Instruments and Methods in Physics Research B, Vol. 237, pp. 58-61, 2005.
• Kazuo Tsutsui, Ryota Higaki, Yuichiro Sasaki, Takahisa Sato, Hideki Tamura, Katsumi Okashita, Bunji Mizuno, Hiroshi Iwai. Doping Effects from Neutral B₂H₆ Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping, Japanese Journal of Applied Physics, Vol. 44, No. 6A, pp. 3903-3907, 2005.
• Motoki Maeda, Natsuko Matsudo, So Watanabe, Kazuo Tsutsui. Growth characteristics of ultra-thin epitaxial Ca_xMg_1-xF₂ alloys on Si(111) substrates, Journal of Crystal Growth, Vol. 285, pp. 572-578, 2005.
• Motoki Maeda, Joji Omae, So Watanabe, Yohei Toriumi, Kazuo Tsutsui. Surface Modification of Si Substrates by CdF₂ Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures, Journal of Crystal Growth, Vol. 278, pp. 643-648, 2005.
• Yongshik Kim, Kunihiro Miyauchi, Shun-ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai. Electrical Properties of Vacuum Annealed La₂O₃ Thin Films grown by E-Beam Evaporation, Japanese Journal of Applied Physics, Vol. 36, pp. 41-49, 2005.

国際会議発表 (査読有り)

• Youichi Kobayashi, Ruifei Xiang, Kazuo Tsutsui, Hiroshi Iwai. Formation of heat resistant Ni silicide by additional Hf layers, Materials for Advanced Metallization (MAM2005), Mar. 2005.

国際会議発表 (査読なし・不明)

• So Watanabe, Yohei Toriumi, Motoki Maeda Tsuyoshi Sugisaki, Kazuo Tsutsui. Fluoride Resonant Tunneling Diodes on Si Substrates, 2005 International Semiconductor Device Research Symposium, Proc. of 2005 International Semiconductor Device Research Symposium, pp. TP3-05, Dec. 2005.
• So Watanabe, Tsuyoshi Sugisaki, Yohei Toriumi, Motoki Maeda, Kazuo Tsutsui. Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates, 2005 Int. Conf. on Solid State Devices and Materials, Ext. Abs. of 2005 Int. Conf. on Solid State Devices and Materials, pp. 160-161, Sept. 2005.
• K. Tsutsui, K. Majima, Y. Fukagawa, Y. Sasaki, K. Okashita, H. Tamura, K. Kakushima, H. Ito, B. Mizuno, H. Iwai. Analysis of Conductivity in Ultra-shallow p⁺ Layers Formed by Plasma Doping, 5th International Workshop on Junction Technology (IWJT2005), Ext. Abs. of 5th International Workshop on Junction Technology, pp. 73-74, June 2005.
• H. Sauddin, H. Tamura, K. Okashita, Y. Sasaki, H. Ito, B. Mizuno, K. Kakushima, K. Tsutsui, H. Iwai. Reverse Current of Plasma Doped p⁺ /n Ultra-Shallow Junction, 5th International Workshop on Junction Technology (IWJT2005), Ext. Abs. of 5th International Workshop on Junction Technology, pp. 75-78, June 2005.
• Motoki Maeda, Natsuko Matsudo, So Watanabe, Kazuo Tsutsui. Study on crystalline structure of Ca_xMg_1-xF₂ alloy composed of cubic fluorite CaF₂ and tetragonal rutile MgF₂ on Si, 13th International Congress on Thin Films, Abstract book of 13th International Congress on Thin Films, pp. 44, June 2005.
• Natsuko Matsudo, Motoki Maeda, So Watanabe, Kazuo Tsutsui. Epitaxial Growth of Ca_xMg_1-xF₂ Alloy for Fluoride Ultra-Thin Heterostructures on Si Substrates, 47th Annual TMS Electronic Materials Conference, Abstract of 47th Annual TMS Electronic Materials Conference, pp. 105, June 2005.
• I. Aiba, Y. Sasaki, K. Okashita, H. Tamura, Y. Fukagawa, K. Tsutsui, H. Ito, K. Kakushima, B. Mizuno, H. Iwai. Feasibility Study of Plasma Doping on Si Substrates with Photo-Resist Patterns, 5th International Workshop on Junction Technology (IWJT2005), Ext. Abs. of 5th International Workshop on Junction Technology, pp. 71-72, June 2005.

国内会議発表 (査読なし・不明)

• 斎藤格広, 渡邉聡, 前田元輝, 筒井一生. 弗化物多層構造による縦方向集積共鳴トンネルデバイスの製作, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1213, Sept. 2005.
• 杉崎剛, 渡辺聡, 前田元輝, 筒井一生. Si(100)基板V溝上の弗化物混晶系共鳴トンネルダイオードの作製, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1213, Sept. 2005.
• 大前譲治, 前田元輝, 杉崎剛, 渡邉聡, 筒井一生. 弗化物ヘテロデバイス集積化に向けたCdF₂分子線によるSi基板表面改質法, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1214, Sept. 2005.
• Sauddin Hendriansyah, 田村秀貴, 岡下勝己, 佐々木雄一朗, 伊藤裕之, 水野文二, 角嶋邦之, 筒井一生, 岩井洋. プラズマドーピング法で形成したメサ型p⁺/n接合の逆方向電流の評価, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 2, pp. 723, Sept. 2005.
• 深川洋太郎, 相庭一穂, 小林勇介, 田村秀貴, 岡下勝己, 佐々木雄一朗, 水野文二, 筒井一生, 角嶋邦之, 岩井洋. プラズマドーピングで形成したp⁺層の極浅化に伴う電気伝導特性の変化, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 2, pp. 723, Sept. 2005.
• 松田徹, 野平博司, 池永英司, 相庭一穂, 深川洋太郎, 田村英貴, 岡下勝巳, 金成国, 佐々木雄一朗, 伊藤裕之, 角嶋邦之, 筒井一生, 水野文二, 岩井洋, 服部健雄. シリコン表面近傍にプラズマドープしたボロン原子の化学結合状態, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 2, pp. 723, Sept. 2005.
• 松土夏子, 前田元輝, 渡邉聡, 筒井一生. Si基板上エピタキシャルCa_xMg_1-xF₂混晶超薄膜の電気的特性, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1213, Sept. 2005.

特許など

• 岩井洋, 筒井一生, 角嶋　邦之, 奥野　泰利, 松元　道一, 久保田　正文, 上田　誠二. 半導体装置及びその製造方法. 特許. 公開. 国立大学法人東京工業大学, 松下電器産業　株式会社. 2005/12/09. 特願2005-355808. 2007/06/07. 特開2007-142347. 2007.

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