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宗田伊理也 2017年 研究業績一覧 (22件 / 148件)
論文
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Iriya Muneta,
Toshiki Kanaki,
Shinobu Ohya,
Masaaki Tanaka.
Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet,
Nature Communications,
Nature Publishing Group,
Vol. 8,
15387,
May 2017.
公式リンク
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Takumi Ohashi,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness,
Applied Physics Express,
IOP Publishing,
Vol. 10,
Mar. 2017.
公式リンク
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"Jun’ichi Shimizu",
"Takumi Ohashi",
"Kentaro Matsuura",
"Iriya Muneta",
"Kuniyuki Kakushima",
"Kazuo Tsutsui",
"Hitoshi Wakabayashi".
High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs,
Japanese Journal of Applied Physics (JJAP),
Vol. 56,
No. 4S,
2017.
国際会議発表 (査読有り)
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Suguru Tatsunokuchi,
Iriya Muneta,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Kuniyuki Kakushima.
Photovoltaic Properties of Lateral Si Nano Wall Solar Cells,
2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017),
Nov. 2017.
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Iriya Muneta,
Hiroshi Terada,
Toshiki Kanaki,
Shinobu Ohya,
Masaaki Tanaka.
(Invited) Sudden restoration of the band ordering at the onset of ferromagnetic transition and magnetic anisotropy control by the quantum size effect in a ferromagnetic semiconductor,
62nd Annual Conference on Magnetism and Magnetic Materials,
Nov. 2017.
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M. Toyama,
T. Ohashi,
K. Matsuura,
J. Shimizu,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing,
Advanced Metallization Conference 2017: 27th Asian Session,
Oct. 2017.
公式リンク
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M. Tanaka,
S. Ohya,
L.D. Anh,
N.T. Tu,
I. Muneta,
P.N. Hai.
(Invited) Recent progress and topics in semiconductor spintronics and ferromagnetic semiconductors,
Junjirou Kanamori Memorial International Symposium – New Horizon of Magnetism-,
Sept. 2017.
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N. Hayakawa,
I. Muneta,
T. Ohashi,
K. Matsuura,
J. Shimizu,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure,
International Conference on Solid State Devices and Materials,
Sept. 2017.
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K. Kakushima,
T. Suzuki,
T. Hoshii,
I. Muneta,
H. Wakabayashi,
HIROSHI IWAI,
Y. Aoki,H. Nohira Aoki,
KAZUO TSUTSUI.
Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes,
Int. Workshop on Junction Technology (IWJT2017),
June 2017.
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Iriya Muneta.
(Invited) Band structure and ferromagnetism in ferromagnetic semiconductor GaMnAs,
Collaborative Conference on Materials Research,
June 2017.
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岡田 泰典,
山口 晋平,
大橋 匠,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas,
International Workshop on Junction Technology,
June 2017.
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J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
N. Ikarashi,
H. Wakabayashi.
Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET,
IEEE Electron Device Technology and Manufacturing Conference (EDTM),
2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM),
pp. 222-223,
June 2017.
公式リンク
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K. Kakushima,
Yuta Ikeuchi,
T. Hoshii,
I. Muneta,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
T. Kikuchi,
S. Ishikawa.
Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes,
Int. Workshop on Junction Technology (IWJT2017),
June 2017.
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S. Hirano,
J. Shimizu,
K. Matsuura,
T. Ohashi,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films,
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM),
pp. 234-235,
June 2017.
公式リンク
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Kakushima, K.,
Suzuki, T.,
Hoshii, T.,
Iriya Muneta,
Wakabayashi, H.,
Tsutsui, K.,
Iwai, H.,
Nohira, H.,
Takuya Hoshii.
Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes,
17th International Workshop on Junction Technology, IWJT 2017,
pp. 81-82,
2017.
公式リンク
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Kakushima, K.,
Ikeuchi, Y.,
Hoshii, T.,
Iriya Muneta,
Wakabayashi, H.,
Tsutsui, K.,
Iwai, H.,
Kikuchi, T.,
Ishikawa, S.,
Takuya Hoshii.
Low temperature ohmic contact for p-type GaN using Mg electrodes,
17th International Workshop on Junction Technology, IWJT 2017,
pp. 85-86,
2017.
公式リンク
国際会議発表 (査読なし・不明)
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K. Tsutsui,
K. Kakushima,
T. Hoshii,
A. Nakajima,
S. Nishizawa,
H. Wakabayashi,
I. Muneta,
K. Sato,
T. Matsudai,
W. Saito,
T. Saraya,
K. Itou,
M. Fukui,
S. Suzuki,
M. Kobayashi,
T. Takakura,
T. Hiramoto,
A. Ogura,
Y. Numasawa,
I. Omura,
H. Ohashi,
H. Iwai.
3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat),
ASICON2017,
Proceedings of International Conference on ASIC,
Vol. 2017-October,
pp. 1137-1140,
Oct. 2017.
公式リンク
国内会議発表 (査読なし・不明)
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筒井一生,
角嶋邦之,
星井 拓也,
中島 昭,
西澤 伸一,
若林整,
宗田伊理也,
佐藤 克己,
末代 知子,
齋藤 渉,
更屋 拓哉,
伊藤 一夫,
福井 宗利,
鈴木 慎一,
小林 正治,
高倉 俊彦,
平本 俊郎,
小椋 厚志,
沼沢 陽一郎,
大村 一郎,
大橋 弘通,
岩井洋.
三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術),
電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan,
電気学会,
Vol. 2017,
No. 74,
pp. 1-6,
Nov. 2017.
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外山 真矢人,
大橋 匠,
松浦 賢太朗,
清水 淳一,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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早川直希,
宗田伊理也,
大橋匠,
松浦賢太朗,
清水淳一,
角嶋邦之,
筒井一生,
若林整.
トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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龍口 傑,
星井 拓也,
宗田 伊理也,
若林 整,
筒井 一生,
岩井 洋,
角嶋 邦之.
横型Siナノウォール太陽電池の発電特性に関する検討,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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篠原 健朗,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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