論文

• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, Kenji Natori, HIROSHI IWAI. Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure, Solid-State Electronics, Vol. 84, pp. 53-57, June 2013.
• Y. Wu, 竇春萌, F. Wei, Kuniyuki KAKUSHIMA, 大毛利健治, パールハットアヘメト, T. Watanabe, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, 片岡好則, takeo hattori, HIROSHI IWAI. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability, Japanese Journal of Applied Physics, Vol. 52, No. 4S, pp. 04CC28-1-04CC28-5, Apr. 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Hiroshi Nohira, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, Solid-State Electronics, Vol. 82, pp. 29-33, Apr. 2013.

国際会議発表 (査読有り)

• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.

国際会議発表 (査読なし・不明)

• unknown unknown, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 来山大祐, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. [Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Takuya Suzuki, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI, 安田哲二. Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Ryuji Hosoi, Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive switching properties of Ce oxides, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel Ni silicidation technology for Schottky diode formation, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent phonon limited electron mobility of Si nanowire, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kazuki Matsumoto, 小山将央, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si fin and nanowire structures, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Jun Kanehara, Yusuke Takei, Youhei Miyata, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kouhei Akita, Jun Kanehara, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. [517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, KENJI NATORI, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, [G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• unknown unknown, A. Ablimit, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electron transport in ballistic diodes: influence of phonon generation in drain region, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• DARYOUSH ZADEH, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of metal Schottky junction for InGaAs substrate, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Tasuku Kaneda, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 157-164, 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, 中塚理, パールハットアヘメト, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100), 15th International Conference on Thin Films, 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure, 15th International Conference on Thin Films, 2013.
• Yuya Suzuki, ダリューシュザデ, Ryuji Hosoi, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation, 15th International Conference on Thin Films, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, Miranda Enrique, takeo hattori, HIROSHI IWAI. Influence electrode materials on CeOx based resistive switching, CSTIC 2012, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Wei Li, 中島一裕, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Interface State Density of 3-dimensional Si channel, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Transient Switching Characteristics of Ce-oxide Resistive Switching Devices, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuya Suzuki, ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface controlled metal contact for n-type diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Stacked Ni-Silicidation Process for Schottky Barrier FET, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent resistivity change of Ni-silicides in nano-region, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Infrared absorption study of La-silicate gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Surface Treatments for Metal Contact on p-type Diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Novel Ohmic Contact Process for n-Ge Substrates, R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Mari Okamoto, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), February 18, 2013, , Japan, 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. International Symposium on Next-Generation Electronics(ISNE 2013), International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Wei Li, 中島一裕, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method, CSTIC 2012, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process, ECS 222nd Meeting, ECS Transactions, 2012.
• Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 145-150, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 9, pp. 217-221, 2012.
• Tohtarhan Kamal, R. Tan, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 281-284, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates, CSTIC 2012, 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Y. Izumi, T. Muro, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures, 2012 12th International Workshop on Junction Technology(IWJT2012), 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure, ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,, ECS Transactions, Vol. 50, No. 3, pp. 447-450, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• マイマイティ マイマイティレャアティ, 関拓也, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Heat Generation within Drain Region on Transport of Hot Electrons, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI, 安田哲二. Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Miyuki Kouda, 鈴木 拓也, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI. Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• DARYOUSH ZADEH, Ryuji Hosoi, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Characterization and improvement of high-k/InGaAs devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by conductance method, Interface state density measurements of 3D silicon channel by conductance method, 2012.
• K. Tuokedaerhan, Tasuku Kaneda, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Annealing Ambient for La2O3/Si Capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Daisuke Kitayama, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, [550] K. Nakajima, W. Li, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Interface state density measurements of 3D silicon channel by charge pumping method”, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 鈴木 拓也, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI, 安田哲二. Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive swirching properties of Ce oxides, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, Tsukuba Nanotechnology Symposium(TNS’11), 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics, ECS 220th Meeting,ECS Transactions, ECS Transactions, Vol. 41, No. 7, pp. 119-124, 2011.

国内会議発表 (査読なし・不明)

• 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 2, pp. 849, Mar. 2008.
• パールハット アヘメト, 筒井一生, 角嶋邦之, 杉井 信之, 知京 豊裕, 服部健雄, 長田 貴弘, 岩井洋. 高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 0, pp. 896, Mar. 2008.
• 足立学, 岡本晃一, 舘喜一, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 宋在烈, 舘喜一, 岡本晃一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 岡本晃一, 舘喜一, 足立学, 佐藤創志, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会 予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.

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