Journal Paper

• T. Murooka, J. Yaita, T. Makino, M. Ogura, H. Kato, S. Yamasaki, M. Natal, S. E. Saddow, T. Iwasaki, M. Hatano. Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates, IEEE Transactions on Electron Devices, Vol. 67, Issue 1, p. 212-216, Dec. 2019.
• J. Yaita, T.Suto, M. Natal, S. E. Saddow, M. Hatano, T. Iwasaki. In-situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates, Diamond & Related Materials, Vol. 88, pp. 158-162, Sept. 2018.
• J. Yaita, T. Tsuji, M. Hatano, T. Iwasaki. Preferentially-aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on si substrates via 3C-SiC intermediate layers, Appl. Phys. Express, Vol. 11, pp. 045501.1〜4, Mar. 2018.
• Takayuki Iwasaki, Taisuke Suwa, Junya Yaita, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano. Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage Current, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 64, No. 8, pp. 3298-3302, July 2017.
• J. Yaita, M. Natal, S. E. Saddow, M. Hatano, T. Iwasaki. Influence of High Power-Density Plasma on Heteroepitaxial Diamond Nucleation on 3C-SiC Surface, Applied Physics Express, Vol. 10, No. 4, pp. 045502-1-4, Mar. 2017.  Official location  
• T. Suto, J. Yaita, T. Iwasaki, M. Hatano. Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC-Si (111) substrate, Appl. Phys. Lett., Vol. 110, pp. 062102-1-062102-5, Feb. 2017.
• S. Furuyama, K.Tahara, T. Iwasaki, M.Shimizu, J.Yaita, M.Kondo, T. Kodera, M.Hatano. Improvement of fluorescence intensity of nitrogen vacancy centers in self-formed diamond microstructures, Appl. Phys. Lett, No. 107, pp. 163012-1-4, Oct. 2015.
• J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, M. Hatano. Heteroepitaxial Growth of Diamond Films on 3C-SiC / Si Substrates with Utilization of Antenna-Edge Microwave Plasma CVD for Nucleation, 2015 Jananese Journal of Applied Physics, Vol. 54, pp. 04DH13-1〜4, Mar. 2015.
• Takayuki Iwasaki, Junya Yaita, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Hideyo Okushi, Satoshi Yamasaki, Mutsuko Hatano. 600 V Diamond Junction Field-Effect Transistors Operated at 200 °C, IEEE Electron Device Lett., Vol. 35, pp. 241-243, 2014.

International Conference (Reviewed)

• Takuya Murooka, Junya Yaita, Takayuki Iwasaki, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Mutsuko Hatano. A High Performance Diamond JFET for Next Generation Power Semiconductor Devices, The Sixth International Education Forum on Envbironment and Energy Science, Dec. 2017.
• Takeru Suto, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. Heteroepitaxial Growth of Highly-Oriented Diamond Films on 3C-SiC / Si (111) Substrates by Pulse Bias Enhanced Nucleation, 2016 MRS Fall Meeting & Exhibit, Nov. 2017.
• Takeyuki Tsuji, Hayato Ozawa, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. High Growth Rate CVD of Selectively Aligned Ensemble NV Centers, 2017MRS Fall Meeting & Exhibit, Nov. 2017.
• J. Yaita, T. Iwasaki, Meralys R. Natal, Stephen E. Saddow, M. Hatano. High-Quality Heteroepitaxial Diamond Films Grown on 3C-SiC/Si Substrates, Hasselt Diamond Workshop 2017, Mar. 2017.
• J. Yaita, T. Iwasaki, Meralys R. Natal, Stephen E. Saddow, M. Hatano. Scaling Laws for the Dislocation Reduction in Heteroepitaxial Diamond Films on 3C-SiC/Si Substrates, The Fifth International Education Forum on Environment and Energy Science, Dec. 2016.
• J. Yaita, T. Iwasaki, Meralys R. Natal, Stephen E. Saddow, M. Hatano. Effect of High Plasma Density on Heteroepitaxial Diamond Nucleation on 3C-SiC/Si Substrates, 2015 MRS Fall Meeting & Exhibit, Dec. 2015.
• J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, M. Hatano. Improving of Heteroepitaxial Diamond Crystalline for Diamond Power Device Applications, The Fourth International Education Forum on Environment and Energy Science(ACEEES), Dec. 2015.
• T.Suto, J.Yaita, T.Iwasaki, M.Natal, S.E.Saddow, M.Hatano. Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave Plasma CVD, SSDM2015, Sept. 2015.
• S. Furuyama, K. Tahara, T. Iwasaki, M. Shimizu, J. Yaita, M. Kondo, T. Kodera, M. Hatano. Improvement of photon collection efficiency from a nitrogen vacancy center in a self-formed diamond microstructure, Diamond Quantum Sensing Workshop 2015, Aug. 2015.
• Junya Yaita, Takayuki Iwasaki, Meralys Reyes-Natal, Stephen E. Saddow, Mutsuko Hatano. Improvement of the nucleation density and orientation of diamond nuclei on 3C-SiC/Si Substrates by using high-power density plasma, 9th International Conference on New Diamond and Nano Carbons 2015, May 2015.
• T. Iwasaki, H. Kato, J.Yaita, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki, M.Hatano. Current Enhancement by Conductivity Modulation in Diamond JFETs for Next Generation Low-Loss Power Devices, The 27th International Symposium on Power Semiconductor Devices and ICs,, May 2015.
• T. Iwasaki, H. Kato, J. Yaita, T. Makino, M. Ogura, D. Takauchi, H. Okushi, S. Yamasaki, M. Hatano. Minority carrier injection in diamond power JFETs for on-current improvement, Hasselt Diamond Workshop 2015, Feb. 2015.
• S. Furuyama, T. Iwasaki, M. Shimizu, J. Yaita, T. Kodera, M. Hatano. Collection efficiency improvement of NV centers by selective growth of diamond, Hasselt Diamond Workshop 2015, Feb. 2015.
• J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, M. Hatano. Heteroepitaxial Growth of Highly-Oriented Diamond Films on Si(001) Substrates with 3C-SiC(001) Buffer Layers, 2014 MRS Fall Meeting & Exhibit, Dec. 2014.
• J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, M. Hatano. Heteroepitaxial Growth of Diamond on Si Substrates via 3C-SiC buffer layer by Antenna Edge Microwave Plasma CVD for Power Electronics Application, The Third International Education Forum on Environment and Energy Science, Dec. 2014.
• Takayuki Iwasaki, Junya Yaita, Meralys Reyes-Natal, Stephen E. Saddow, Mutsuko Hatano. High Voltage Characteristics and Interface Analysis of Diamond Lateral p-n Junction Devices, 2014 MRS Fall Meeting & Exhibit, Dec. 2014.
• J.Yaita, T.Iwasaki, M.Natal, S.E.Sadow, M.Hatano. Heteroepitaxial growth of diamond films on 3C-SiC (001)/Si substrates by antenna-edge microwave plasma CVD, SSDM 2014, Sept. 2014.
• T. Iwasaki, J. Yaita, M. Natal, S. E. Saddow, M. Hatano. Heteroepitaxial nucleation of diamond on 3C-SiC(001) thin films by antenna-edge microwave plasma CVD, Hasselt Diamond Workshop 2014, Feb. 2014.

Domestic Conference (Reviewed)

• Takeru Suto, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. パルスバイアス核形成および選択的エッチング効果を用いた3C-SiC/Si上への(111)高配向ダイヤモンドの合成, 第30回ダイヤモンドシンポジウム, Nov. 2016.
• Takeru Suto, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. パルスバイアス核形成による3C-SiC(111)/Si(111)上へのダイヤモンドヘテロエピタキシャル成長, 第２９回ダイヤモンドシンポジウム, Nov. 2015.
• Junya Yaita, Takayuki Iwasaki, M.Natal, S.E. Saddow, Mutsuko Hatano. 先端放電型プラズマCVDを用いた3C-SiC/Si上へのダイヤモンドヘテロエピタキシャル成長, 第２８回ダイヤモンドシンポジウム, Nov. 2014.

International Conference (Not reviewed / Unknown)

• T. Suto, J. Yaita, T. Iwasaki, M. Hatano. Heteroepitaxial Growth of Diamond on 3C-SiC/Si by Antenna-edge Microwave Plasma CVD, Diamond Quantum Sensing Workshop 2015, Aug. 2015.

Domestic Conference (Not reviewed / Unknown)

• Takuya Murooka, Junya Yaita, Takayuki Iwasaki, 牧野 俊晴, 小 倉 政彦, 加藤 宙光, Natal Meralys, Saddow Stephen E., 山崎 聡, Mutsuko Hatano. 3C-SiC/Si 基板上に形成したヘテロエピタキシャルダイ ヤモンドSBD の電気特性, 第65回応用物理学会 春季学術講演会, Mar. 2018.
• Haruka Hoshino, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. ヘテロエピタキシャル核形成プロセスにおけるバイアス 電流のモニタリング, 第65回応用物理学会 春季学術講演会, Mar. 2018.
• Takuya Murooka, Junya Yaita, Takayuki Iwasaki, 牧野俊晴＊, 加藤宙光＊, 小倉政彦＊, Mutsuko Hatano. 大電流化を目指したダイヤモンドJFETの新規構造, 第31回ダイヤモンドシンポジウム, Nov. 2017.
• Junya Yaita, Haruka Hoshino, Takeyuki Tsuji, Takayuki Iwasaki, Mutsuko Hatano. ヘテロエピタキシャル核形成技術を用いたナノダイヤモ ンド中のNVセンター配向制御, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• Takeyuki Tsuji, Junya Yaita, Hayato Ozawa, Takayuki Iwasaki, Mutsuko Hatano. 高プラズマパワー密度CVDによる高配向・高生成NVアンサンブルの高速合成, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• Takeru Suto, Shinnosuke Kuwabara, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. 高酸素濃度成長を用いたSi(111)上高配向ダイヤ膜の合成, 第64回応用物理学会春季学術講演会, Mar. 2017.
• Junya Yaita, Takayuki Iwasaki, Meralys Natal, S. E. Saddow, Mutsuko Hatano. 高密度プラズマを用いた3C-SiC/Si上のダイヤモンドヘテロエピタキシャル成長及び欠陥評価, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• Takeru Suto, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. 3C-SiC(111)/Si(111)上への高配向ダイヤモンドのヘテロエピタキシャル成長, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• Takeru Suto, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. “パルスバイアス核形成法を用いた3C-SiC(111)/Si(111)上への高配向ダイヤモンドの合成, 第63回応用物理学会春季学術講演会, Mar. 2016.
• Junya Yaita, Takayuki Iwasaki, Meralys Reyes Nata, Stephen E. Saddow, Mutsuko Hatano. 高密度プラズマによる3C-SiC/Si上のダイヤモンド核配向性の向上, 第63回応用物理学会春季学術講演会, Mar. 2016.
• Yuta Iida, Junya Yaita, Ryouta Shimamura, Kei Hasegawa, Mutsuko Hatano, Manabu Ihara. 固体酸化物型燃料電池燃料極への第3成分の添加と発電特性およびメカニズムの検討, 2016.
• Satoko Furuyama, Takayuki Iwasaki, 清水麻希, Junya Yaita, Tetsuo Kodera, Mutsuko Hatano. ダイヤモンド選択成長によるNVセンターの集光率向上, 第62回応用物理学会春季学術講演会, Mar. 2015.
• Junya Yaita, Takayuki Iwasaki, Meralys Natal, Steven E. Saddow, Mutsuko Hatano. 先端放電型プラズマＣＶＤを用いた3C-SiC(001)/Si(001)ウェハ上への高配向ダイヤモンド薄膜合成, 第75回ダ応用物理学会秋季学術講演会,, Sept. 2014.
• Junya Yaita, Takayuki Iwasaki, S.E.Saddow, Mutsuko Hatano. 先端放電型プラズマCVDを用いたb-SiC上へのダイヤモンドヘテロエピタキシャル成長, 第61回応用物理学会春季学術講演会, Mar. 2014.

Other Publication

• Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. Heteroepitaxy of diamond on SiC, Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing, pp. 81-97, July 2018.

Degree

• Study of diamond heteroepitaxy on Si substrates for power and sensor devices,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/03/26,   
• Study of diamond heteroepitaxy on Si substrates for power and sensor devices,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/03/26,   
• Study of diamond heteroepitaxy on Si substrates for power and sensor devices,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/03/26,   

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