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角嶋邦之 2011年 研究業績一覧 (75件 / 817件)
論文
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Kiichi Tachi,
N. Vulliet,
S. Barraud,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
S. Cristoloveanu,
T. Ernst.
Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET”,
Solid-State Electronics,
Vol. 65-66,
pp. 16-21,
Nov. 2011.
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Soshi Sato,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Kenji Ohmori,
KENJI NATORI,
Keisaku Yamada,
HIROSHI IWAI.
Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure,
Solid-State Electronics,
Vol. 65-66,
pp. 2-8,
Nov. 2011.
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Soshi Sato,
Kuniyuki KAKUSHIMA,
Kenji Ohmori,
KENJI NATORI,
Keisaku Yamada,
HIROSHI IWAI.
Electrical characteristics of asymmetrical silicon nanowire field-effect transistors,
APPLIED PHYSICS LETTERS,
Vol. 99,
No. 22,
pp. 223518-1-3,
Nov. 2011.
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来山大祐,
久保田透,
Tomotsune Koyanagi,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
[ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011,
Japanese Journal of Applied Physics,
Vol. 50,
No. 10,
pp. 10PA05-1-5,
Oct. 2011.
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Miyuki Kouda,
Kenji Ozawa,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
HIROSHI IWAI,
ト部友二,
安田哲二.
Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes,
Japanese Journal of Applied Physics,
Vol. 50,
No. 10,
pp. 10PA06-1-4,
Oct. 2011.
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Miyuki Kouda,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm,
Japanese Journal of Applied Physics,
Vol. 50,
No. 10,
pp. 10PA04-1-4,
Oct. 2011.
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Miyuki Kouda,
Kenji Ozawa,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
HIROSHI IWAI,
ト部友二,
安田哲二.
Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes,
Japanese Journal of Applied Physics,
Vol. 50,
No. 10,
pp. 10PA06-1-4,
Oct. 2011.
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unknown unknown,
W. Yasenjiang,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
M. Geni,
KENJI NATORI,
HIROSHI IWAI.
Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+–i–n+ Diode,
Japanese Journal of Applied Physics,
Vol. 50,
No. 10,
pp. 104301-1-3,
Oct. 2011.
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ダリューシュザデ,
Takashi Kanda,
山下晃司,
Kuniyuki KAKUSHIMA,
Hiroshi Nohira,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods,
Japanese Journal of Applied Physics,
Vol. 50,
No. 10,
pp. 10PD03-1-4,
Oct. 2011.
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山下晃司,
沼尻 侑也,
M. Watanabe,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
Hiroshi Nohira.
Study of High-k/Ino.53Ga.0.47As interface by Hard X-ray Photoemission Spectroscopy,
Japanese Journal of Applied Physics,
Vol. 50,
No. 10,
pp. 10PD02-1-5,
Oct. 2011.
-
H. Wong,
Y. B.L,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI.
Subthreshold Characteristics of MOS Transistors With CeO(2)/La(2)O(3) Stacked Gate Dielectric,
IEEE ELECTRON DEVICE LETTERS,,
Aug. 2011.
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ダリューシュザデ,
Kuniyuki KAKUSHIMA,
Takashi Kanda,
Y.C.Lin,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
E.Y.Chang,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques,
Microelectronic Engineering,
Vol. 88,
No. 7,
pp. 1109-1112,
July 2011.
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来山大祐,
Tomotsune Koyanagi,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3,
Microelectronic Engineering,
Vol. 88,
No. 7,
pp. 1330-1333,
July 2011.
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Soshi Sato,
Wei Li,
Kuniyuki KAKUSHIMA,
Kenji Ohmori,
KENJI NATORI,
Keisaku Yamada,
HIROSHI IWAI.
Eatraction of additional interfacial states of silicon nanowire field-effect transistors,
APPLIED PHYSICS LETTERS,
Vol. 98,
June 2011.
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H.D. Trinh,
G. Brammertz,
E.Y. Chang,
C.I. Kuo,
C.Y. Lu,
Y.C. Lin,
H. Q. Nguyen,
Y. Y. Wong,
B.T. Tran,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI.
Electrical Characterization of Al2O3 /n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments,
IEEE ELECTRON DEVICE LETTERS,
Vol. 32,
No. 6,
June 2011.
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Soshi Sato,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Kenji Ohmori,
KENJI NATORI,
Keisaku Yamada,
HIROSHI IWAI.
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors,
Microelectronics Reliability,
Vol. 51,
pp. 879-884,
May 2011.
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HIROSHI IWAI,
KENJI NATORI,
Kenji Shiraishi,
岩田 潤一,
押山 淳,
Keisaku Yamada,
Kenji Ohmori,
Kuniyuki KAKUSHIMA,
Ahmet Parhat.
Si nanowire FET and its modeling,
Science China,
Vol. 54,
No. 5,
pp. 1004-1011,
May 2011.
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Kiichi Tachi,
S. Barraud,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
S. Cristoloveanu,
T. Ernst.
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs,
Microelectronics Reliability,
Vol. 51,
pp. 885-888,
May 2011.
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DARYOUSH ZADEH,
Soshi Sato,
Kuniyuki KAKUSHIMA,
A. Srivastava,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
C.K. Sarkar,
HIROSHI IWAI.
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise,
Microelectronics Reliability,
Vol. 51,
pp. 746-750,
Apr. 2011.
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Soshi Sato,
Kenji Ohmori,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KENJI NATORI,
Keisaku Yamada,
HIROSHI IWAI.
Experimental Characterization of Quasi-Fermi Pontential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry,
Applied Physics Express,
Vol. 4,
No. 044201,
Apr. 2011.
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K. Shubhakar,
K.L. Pey,
S.S. Kushvaha,
S.J. O'Shea,
N. Raghavan,
M. Bosman,
Miyuki Kouda,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI.
Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy,
Applied Physics Letters,
Vol. 98,
No. 072902,
Feb. 2011.
国際会議発表 (査読有り)
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Jun Kanehara,
Youhei Miyata,
Hiroshi Nohira,
Yudai Izumi,
Takayuki Muro,
Toyohiko Kinoshita,
Parhat Ahmet,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Takeo Hattori,
Hiroshi Iwai.
Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles,
2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011),
Sept. 2011.
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Youhei Miyata,
Jun Kanehara,
Hiroshi Nohira,
Yudai Izumi,
Takayuki Muro,
Toyohiko Kinoshita,
Parhat Ahmet,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Takeo Hattori,
Hiroshi Iwai.
Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures,
2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011),
Sept. 2011.
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K. Kakushima,
J. Kanehara,
Y. Izumi,
T. Muro,
T. Kinoshita,
P. Ahmet,
K. Tsutsui,
T. Hattori,
H. Iwai.
Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy,
2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011),
Sept. 2011.
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Miyuki Kouda,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm,
2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11),
2011.
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Soshi Sato,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Kenji Ohmori,
KENJI NATORI,
Keisaku Yamada,
HIROSHI IWAI.
Structural Effects of Channel Cross-section on a Gate Capacitance of Silicon Nanowire Field-Effect Transistors,
CSTIC2011,
2011.
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Ahmet Parhat,
来山大祐,
金田翼,
鈴木 拓也,
Tomotsune Koyanagi,
Miyuki Kouda,
マイマイティ マイマイティレャアティ,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm,
CSTIC2011,
2011.
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Kenji Ohmori,
W. Feng,
Soshi Sato,
R. Hettiarachchi,
M. Sato,
T. Matsuki,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
Keisaku Yamada.
Direct Real-Time Observation of Channel Potential Fluctuation, Correlated to Random Telegraph Noise of Drain Current Using Nanowire MOSFETs with Four-Probe Terminals,
2011 Symposium on VLSI Technology,
2011.
国内会議発表 (査読有り)
国際会議発表 (査読なし・不明)
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Miyuki Kouda,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics,
ECS 220th Meeting,
ECS Transactions,
Vol. 41,
No. 7,
pp. 119-124,
2011.
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Miyuki Kouda,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics,
ECS 220th Meeting,ECS Transactions,
ECS Transactions,
Vol. 41,
No. 7,
pp. 119-124,
2011.
-
Hiroshi Nohira,
小松新,
山下晃司,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
Y. Hioshi,
K. Sawano,
Y. Shiraki.
XPS Study on Chemical Bonding States of high-k/high-μ Gate Stacks for Advanced CMOS,
ECS 220th Meeting,
ECS Transactions,
Vol. 41,
No. 7,
pp. 137-146,
2011.
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櫻井 蓉子,
大毛利健治,
Keisaku Yamada,
Kenji Shiraishi,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
S. Nomura.
Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires,
ECS 220th Meeting,
2011.
-
Y. Wu,
Kuniyuki KAKUSHIMA,
大毛利健治,
Akira Nishiyama,
HIROSHI IWAI,
Keisaku Yamada.
A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors,
Tsukuba Nanotechnology Symposium(TNS’11),
2011.
-
竇春萌,
Soshi Sato,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Si nanowire FET with asymmetric channel,
Tsukuba Nanotechnology Symposium(TNS’11),
2011.
-
Miyuki Kouda,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes,
2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11),
2011.
-
ダリューシュザデ,
Takashi Kanda,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization,
2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11),
2011.
-
HIROSHI IWAI,
Kuniyuki KAKUSHIMA,
E.Y.Chang,
Yueh-Chin Lin.
III-V MOSFETs for Next Generation – Fabrication of III-V MOS Capacitors,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
Kiichi Tachi,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI,
S. Cristoloveanu,
T. Ernst.
Characterization of carrier transport in vertically-stacked Si nanowire FETs,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
Soshi Sato,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
Kenji Ohmori,
KENJI NATORI,
Keisaku Yamada,
HIROSHI IWAI.
Influence of the cross-sectional shape for Si nanowire FETs,
,Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
KENJI NATORI,
HIROSHI IWAI.
Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
unknown unknown,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KENJI NATORI,
HIROSHI IWAI.
Influence of Phonon Generation of Hot Electrons in Drain Region on Ballistic Transport,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
Naoto Shigemori,
Soshi Sato,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
An effective suppression process for Ni silicide enchroachment into Si nanowire,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
小山将央,
Naoto Shigemori,
Hideaki Arai,
Soshi Sato,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Lateral encroachment of Ni silicide into silicon nanowire,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
中島一裕,
Soshi Sato,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
Takamasa Kawanago,
鈴木 拓也,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
An effective process for oxygen defect suppression for La-based oxide gate dielectric,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
金田翼,
Miyuki Kouda,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Effect of rare earth oxide capping for La-based gate oxides,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
マイマイティ マイマイティレャアティ,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
HIROSHI IWAI.
Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
来山大祐,
久保田 透,
Tomotsune Koyanagi,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
-
Takashi Kanda,
ダリューシュザデ,
Y. C. Lin,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
E.Y. Chang,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors,
CSTIC2011,
2011.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation,
CSTIC2011,
2011.
-
W. Feng,
R. Hettiarachchi,
Soshi Sato,
Kuniyuki KAKUSHIMA,
M. Niwa,
HIROSHI IWAI,
Keisaku Yamada,
Kenji Ohmori.
Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties,
2011 International Conference on Solid State Devices and Materials(SSDM 2011),
2011.
-
Ahmet Parhat,
来山大祐,
金田翼,
鈴木 拓也,
Tomotsune Koyanagi,
Miyuki Kouda,
マイマイティ マイマイティレャアティ,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks,
,219th ECS Meeting,
2011.
-
C. Dou,
向井 弘樹,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure,
219th ECS Meeting,
2011.
国内会議発表 (査読なし・不明)
-
鈴木 拓也,
幸田みゆき,
角嶋邦之,
パールハットアヘメト,
岩井洋,
安田哲二.
ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価,
第72回応用物理学会学術講演会,
2011.
-
Kamale Tuokedaerhan,
金田翼,
マイマイティ マイマイティレャアティ,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響,
第72回応用物理学会学術講演会,
2011.
-
常石佳奈,
来山大祐,
幸田みゆき,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
W/Tm2O3/n-Si構造キャパシタの電気特性におけるTm2O3膜厚依存性,
第72回応用物理学会学術講演会,
2011.
-
沢尻 侑也,
山下晃司,
小松 新,
ダリューシュザデ,
角嶋邦之,
岩井洋,
野平博司.
AR-XPSによる(NH4) 2S処理したIn0.53Ga0.47As表面の化学結合状態の評価,
第72回応用物理学会学術講演会,
2011.
-
鈴木佑哉,
細井隆司,
ダリューシュザデ,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析,
第72回応用物理学会学術講演会,
2011.
-
松本一輝,
小山将央,
呉研,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討,
第72回応用物理学会学術講演会,
2011.
-
角嶋邦之,
金原潤,
筒井一生,
服部健雄,
岩井洋.
高濃度ボロンドープ飼料の角度分解X線光電子分光による濃度分布解析,
第72回応用物理学会学術講演会,
2011.
-
宮田陽平,
金原潤,
難波覚,
三角元力,
筒井一生,
野平博司,
室隆桂之,
木下豊彦,
角嶋邦之,
パールハットアヘメト,
服部健雄,
岩井洋.
軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析,
第72回応用物理学会学術講演会,
2011.
-
金原潤,
宮田陽平,
秋田洸平,
筒井一生,
野平博司,
室隆桂之,
木下豊彦,
パールハットアヘメト,
角嶋邦之,
服部健雄,
岩井洋.
Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布,
第72回応用物理学会学術講演会,
2011.
-
田村雄太,
角嶋邦之,
中塚 理,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響,
第72回応用物理学会学術講演会,
2011.
-
吉原 亮,
角嶋邦之,
パールハットアヘメト,
中塚理,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性,
第72回応用物理学会学術講演会,
2011.
-
フェン ウェイ,
ヘッティアーラッチ・ランガ,
佐藤創志,
角嶋邦之,
M.Niwa,
岩井洋,
山田啓作,
大毛利健二.
Advantages of Silicon Nanowire MOSFETs over Planar MOSFETs Investigated from the Aspect of Drain-Current Noise,
第72回応用物理学会学術講演会,
2011.
-
大毛利健二,
フェン ウェイ,
佐藤創志,
ヘッティアーラッチ・ランガ,
佐藤 基之,
松木 武雄,
角嶋邦之,
岩井洋,
山田啓作.
ドレイン電流のランダムテレグラフノイズに相関したFETチャネルポテンシャル揺らぎの実時間直接観測,
第72回応用物理学会学術講演会,
2011.
-
叶真一,
MokhammadSholihul Hadi,
竇春萌,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性,
第72回応用物理学会学術講演会,
2011.
-
細田倫央,
李映勲,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
岩井洋.
矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性,
第72回応用物理学会学術講演会,
2011.
-
佐藤創志,
角嶋邦之,
パールハットアヘメト,
大毛利健治,
名取研二,
山田啓作,
岩井洋.
Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors,
ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会),
2011.
-
小澤健児,
幸田みゆき,
角嶋邦之,
パールハットアヘメト,
岩井洋,
ト部友二,
安田哲二.
La2O3 のALD成長のための原料選択:シクロペンタジエニル錯体とアミディネート錯体の比較,
ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会),
2011.
-
LiWei,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価,
第72回応用物理学会学術講演会,
2011.
-
田中 祐樹,
川那子高暢,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響,
第72回応用物理学会学術講演会,
2011.
-
関 拓也,
来山大祐,
角嶋邦之,
パールハットアヘメト,
筒井一生,
西山彰,
杉井信之,
名取研二,
服部健雄,
岩井洋.
High-k/Si 直接接合構造における界面準位の定量評価について,
第72回応用物理学会学術講演会,
2011.
特許など
-
AHMETPARHAT,
マイマイティ マイマイティレシャティ,
岩井洋,
服部健雄,
筒井一生,
角嶋邦之.
半導体素子.
特許.
公開.
国立大学法人東京工業大学.
2011/12/27.
特願2011-285538.
2013/07/08.
特開2013-135135.
2013.
-
角嶋邦之,
岩井洋,
アヘメト パールハット,
佐藤 創志,
山田 啓作,
大毛利 健治.
ナノワイヤトランジスタ及びその製造方法.
特許.
公開.
国立大学法人東京工業大学, 学校法人早稲田大学.
2010/03/31.
特願2010-079972.
2011/10/20.
特開2011-211127.
2011.
-
角嶋邦之,
岩井洋,
アヘメト パールハット,
佐藤 創志,
山田 啓作,
大毛利 健治.
ナノワイヤトランジスタ及びその製造方法.
特許.
公開.
国立大学法人東京工業大学, 学校法人早稲田大学.
2010/03/31.
特願2010-079971.
2011/10/20.
特開2011-211126.
2011.
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