論文

• Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing, Japanese Journal of Applied Physics, Vol. 61, 075506, July 2022.
• Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Emi Kano, Nobuyuki Ikarashi, Hitoshi Wakabayash. Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box, Journal of the Electron Devices Society (J-EDS), Vol. 9, p. 1117, Aug. 2021.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH10, Feb. 2021.
• Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing, Journal of the Electron Devices Society (J-EDS), Vol. 9, Page 278-285, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH05, Jan. 2021.
• Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo. Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 59, No. 8, Page 80906, Aug. 2020.

国際会議発表 (査読有り)

• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi. Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region, International Conference on Solid State Devices and Materials, Sept. 2021.
• Takuya Hamada, Taiga Horiguchi, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering, Internatonal Conference on Solid State Devices and Materials, Sept. 2021.
• Masaya Hamada, Takuya Hamada, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node, International Workshop on Junction Technology (IWJT2021), June 2021.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Shigetaka Tomiya, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi. Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration, Int. Workshop on Juction Technology (IWJT2019), June 2019.

国際会議発表 (査読なし・不明)

• Takuya Hamada, Shinpei Yamaguchi, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Kazuo Tsutsui. Electrical properties of selectively grown GaN channel for FinFETs, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.

国内会議発表 (査読なし・不明)

• 濱田 昌也, 松浦 賢太朗, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact, 第70回応用物理学会春季学術講演会, Mar. 2023.
• 立松 真一, 濱田 昌也, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. アニール処理によるWS2-Niエッジコンタクト特性の向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 筒井一生, 濱田拓也, 高山 研, 金 相佑, 星井拓也, 角嶋邦之, 若林 整, 高橋言緒, 井手利英, 清水三聡. 選択成長法を用いたGaN 系FinFET, 電気学会電子デバイス研究会, Mar. 2021.
• 高山 研, 太田 貴士, 佐々木 満孝, 向井 勇人, 濱田 拓也, 高橋 言雄, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 松浦 賢太朗, 濱田 昌也, 濱田 拓也, 谷川 晴紀, 坂本 拓朗, 堀 敦, 宗田 伊理也, 川那子 高暢, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 向井 勇人, 髙山 研, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 選択成長法を用いたGaN FinFETの作製, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 拓也, 堀口 大河, 辰巳 哲也, 冨谷 茂隆, 濱田 昌也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 高山 研, 向井 勇人, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三総, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. GaN Fin構造選択成長における低抵抗領域の発生原因の検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 堀口 大河, 濱田 拓也, 辰巳 哲也, 冨谷 茂隆, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 拓也, 向井 勇人, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 向井 勇人, 濱田 拓也, 高橋 言緒, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 濱田拓也, 向井勇人, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第82回半導体・集積回路シンポジウム, Aug. 2018.

学位論文

• Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26,   
• Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26, 
• Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26,   
• Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2022/03/26,   

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