論文

• M. Yamada, K. Uchida, Y. Miyamoto. Delay time component of InGaAs MOSFET caused by dynamic source resistance, IEICE Trans. Electron, Vol. E97-C, No. 5, pp. 419-422, May 2014.
• Tsunaki Takahashi, Shunri Oda, Ken Uchida. Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires, Japanese Journal of Applied Physics, Vol. 52, pp. 064203 (7 pages), May 2013.
• Teruyuki Ohashi, Shunri Oda, Ken Uchida. Impact of Deformation Potential Increase at Si/SiO$_{2}$ Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 52, pp. 04CC12 (6 pages), Mar. 2013.
• Aya Shindome, Yu Doioka, Nobuyasu Beppu, Shunri Oda, Ken Uchida. Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons, Japanese Journal of Applied Physics, Vol. 52, pp. 04CN05 (5 pages), Mar. 2013.
• Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, Ken Uchida. Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 52, pp. 04CC03 (6 pages), Feb. 2013.
• G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, S. Oda. Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots, Physical Review B, Vol. 86, pp. 115322 (5 pages), Sept. 2012.
• K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda. Key capacitive parameters for designing single-electron transistor charge sensors, J. Appl. Phys, Journal of Applied Physics, Vol. 111, pp. 093715-1-5, May 2012.
• Y. Nakamine, T. Kodera, K. Uchida, S. Oda. Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching, Japanese Journal of Applied Physics, Vol. 50, pp. 115002-1-4, Nov. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Growth of narrow and straight germanium nanowires by vapour-liquid-solid chemical-vapour-deposition, Japanese Journal of Applied Physics, Vol. 50, pp. 105002 (6 pages), Oct. 2011.  公式リンク  
  
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition, Journal of Nanoscience and Nanotechnology, Vol. 11, pp. 8163-8168, Sept. 2011.  公式リンク  
  
• N. Kadotani, T. Ohashi, T. Takahashi, S. Oda, K. Uchida. Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 50, pp. 094101 (7 pages), Sept. 2011.
• M. A. Sulthoni, T. Kodera, K. Uchida, S. Oda. Numerical simulation study of electrostatically defined silicon double quantum dot device, J. Appl. Phys., Vol. 110, pp. 054511 -1-4, Aug. 2011.
• BERRIN PINAR ALGUL, 小寺 哲夫, 小田 俊理, 内田 建. Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade, Jpn. J. Appl. Phys, Vol. 50, pp. 04DN01 (4 pages), Apr. 2011.
• Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda. Simulation study of charge modulation in coupled quantum dots in silicon, Japanese Journal of Applied Physics, Vol. 50, 04DJ05, Apr. 2011.
• T. Takahashi, T. Kodera, S. Oda, K. Uchida. Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field, Journal of Applied Physics, Vol. 109, pp. 034505, Feb. 2011.
• Y. Nakamine, N. Inaba, T. Kodera, K. Uchida, R. N. Pereira, A. R. Stegner, M. S. Brandt, M. Stutzmann, S. Oda. Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System, Japanese Journal of Applied Physics, Vol. 50, pp. 025002, Feb. 2011.
• N. Kadotani, T. Takahashi, T. Ohashi, S. Oda, K. Uchida. Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm, Journal of Applied Physics, Vol. 110, pp. 034502. (7 pages), 2011.
• Y. Nakamine, T. Kodera, K. Uchida, S. Oda. Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching, Vol. 50, No. 115002, 4pages, 2011.
• T. Ishikawa, H. Nikaido, K. Usami, K. Uchida, S. Oda. Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots, Japanese Journal of Applied Physics, pp. 125002 (4 pages), Dec. 2010.
• Jun Ogi, Thierry Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David A. Williams, Shunri Oda, Hiroshi Mizuta. Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots, Japanese Journal of Applied Physics, Vol. 49, pp. 045203, 2010.
• Jun Ogi, Mohammad Adel Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, Hiroshi Mizuta. Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation, Japanese Journal of Applied Physics, Vol. 49, pp. 044001, 2010.
• 高橋綱己, 山端元音, 小木純, 小寺哲夫, 小田俊理, 内田建. 「強磁場印加による(110)pMOSFETサブバンド構造の直接的観測」, 『応用物理学会シリコンテクノロジー分科会研究集会予稿集』, 応用物理学会, No. 118, pp. 12-15, 2010.
• T. Nagami, Y. Tsuchiya, K. Uchida, H. Mizuta, S. Oda. Scaling Analysis of Nanoelectromechanical Memory Devices, Japanese Journal of Applied Physics, Vol. 49, in press, 2010.
• G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, S. Oda, H. Mizuta. Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K, Appl. Phys. Express., Vol. 2, No. 9, pp. 095002, Sept. 2009.
• Xin Zhou, Ken Uchida, hiroshi mizuta, SHUNRI ODA. Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure, Journal of Applied Physics, Vol. 106, pp. 044511, Aug. 2009.
• Chuanbo Li, Kouichi Usami, T. Muraki, H. Mizuta, K. Uchida, S. Oda. The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate, Applied Physics Letters, Vol. 93, pp. 041917 (3 pages), Aug. 2009.
• G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, S. Oda. Electron transport through silicon serial triple quantum dots, Solid State Electronics, Vol. 53, pp. 779-785, July 2009.
• Benjamin Henri Jose Pruvost, K. Uchida, H. Mizuta, S. Oda. Design optimization of NEMS switches for suspended-gate single-electron transistor applications, IEEE Transactions on Nanotechnology, 8 (2), 174-184, Mar. 2009.
• Benjamin Henri Jose Pruvost, Ken Uchida, hiroshi mizuta, SHUNRI ODA. Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors, IEEE Transactions on Nanotechnology, 2009.
• S. Kobayashi, M. Saitoh, K. Uchida. Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors, J. Appl. Phys, Vol. 106, 024511, 2009.
• M. Saitoh, S. Kobayashi, K. Uchida. Stress Engineering in High-k FETs for Mobility and On-Current Enhancements, IEEE Trans. on Electron Devices, Vol. 56, pp. 1451-1457, 2009.
• Xin Zhou, K. Uchida, H. Mizuta, S. Oda. Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films, 2009.
• M. Ono, K. Uchida, T. Tezuka. Advantages of Densely Packed Multi-Wire Transistors with Planar Gate Structure Fabricated on Low-k Buried Insulator over Planar Silicon-on-Insulator Devices, Jpn. J. Appl. Phys., Vol. 48, 054505, 2009.

著書

• 芝原 健太郎, 宮本恭幸, 内田 建. タウア・ニン 最新VLSIの基礎 第二版, 丸善, Jan. 2013.

国際会議発表 (査読有り)

• Aya Shindome, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Experimental Study on SET/RESET Conditions for Graphene ReRAM, Solid State Devices and Materials Conference, Sept. 2013.
• T. Kodera, K. Horibe, T. Kambara, T. Sawada, K. Uchida, Y. Arakawa, S. Oda. Fabrication and characterization of silicon quantum dots toward spin-based quantum information devices, Internatilnal Workshop on silicon Quantum Electronics, Feb. 2013.
• Teruyuki Ohashi, Shunri Oda, Ken Uchida. Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET, IEEE EDS WIMNACT-37, P-15, 2013.
• Satoshi Ihara, Tetsuo Kodera, Kosuke Horibe, Yukio Kawano, Ken Uchida, Shunri Oda. Demonstration of large charging energy in quantum dots fabricated on ultrathin SOI, IEEE EDS WIMNACT-37, P-8, 2013.
• T. Ohashi, T. Takahashi, T. Kodera, S. Oda, K. Uchida. Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms, 2012 International Conference on Solid State Devices and Materials (SSDM 2012), Sept. 2012.
• Yoshifumi Nakamine, Jannatul Ferdous Susoma, Ran Zheng, Nobuhiro Kondo, Mohammad R. T. Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, Shunri Oda. Electrical and Optical Properties of Silicon Nanocrystals Prepared by Very High Frequency Plasma Deposition System, 8th International Nanotechnology Conference, May 2012.
• Tetsuo Kodera, kousuke Horibe, Tomohiro Kambara, Thierry Ferrus, Alessandro Rossi, Ken Uchida, David A. Williams, Yasuhiko Arakawa, Shunri Oda. Silicon quantum dot devices toward electron spin quantum bits, 8th International Nanotechnology Conference, May 2012.
• Teruyuki Ohashi, Shunri Oda, Ken Uchida. Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs, ECS Transactions, Vol. 50 (9), pp. 171-174, 2012.
• N. Beppu, T. Takahashi, S Oda, K. Uchida. Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV, IEDM 2012, pp. 641-644, 2012.
• T. Takahashi, K.Chen, N.Beppu, S. Oda, K. Uchida. Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability, IEDM2011, 34.6, Dec. 2011.
• T. Ohashi, T. Takahashi, N. Beppu, S. Oda, K. Uchida. Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs, IEDM2011, No. 16.4, Dec. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition, 24th International Microprocesses and Nanotechnology Conference, 27B-8-4, Oct. 2011.
• T. Kodera, K. Horibe, W. Lin, T. Kambara, T. Ferrus, A. Rossi, K. Uchida, D. A. Williams, Y. Arakawa, S. Oda. Development of silicon quantum dot devices toward spin quantum bits, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-12, Oct. 2011.
• K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda. Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-11, Oct. 2011.
• Y. Fukuoka, T. Kodera, K. Takeda, T. Obata, K. Yoshida, T. Otsuka, K. Sawano, K Uchida, Y. Shiraki, S. Tarucha, S. Oda. Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-10, Oct. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Synthesis of small-diameter Ge NW at low temperature for electron device application, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-6, Oct. 2011.
• Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Yukio Kawano, Ken Uchida, Mutsuko Hatano, Shunri Oda. Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-3, Oct. 2011.
• Ian C. Robertson, Tetsuo Kodera, Yasuko Yanagida, Ken Uchida, Shunri Oda. Utilizing 2D figures of DNA polymer for self-assembly applications on silicon platform, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-1, Oct. 2011.
• Teruyuki Ohashi, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda, Ken Uchida. Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-15, Oct. 2011.
• Tsunaki Takahashi, Tetsuo Kodera, Shunri Oda, Ken Uchida. Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, P-14, Oct. 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Germanium nanowires with 3-nm-diameter prepared by low temperature (260oC) vapour-liquid-solid chemical vapour deposition, EuroCVD 18, 9-5, Sept. 2011.
• T. Kodera, K. Horibe, T. Kambara, G. Yamahata, K. Uchida, Y. Arakawa, S. Oda. Observation of few-electron regime and suppression of inter-dot tunneling in silicon quantum dots, the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011), Sept. 2011.
• T. Kodera, K. Horibe, H. Hayashi, Tomohiro Kambara, K. Uchida, Y. Arakawa, S. Oda. Triangularly-positioned silicon triple quantum dots, the 15th International Conference on Modulated Semiconductor Structures (MSS 15), Tu-P-119, Aug. 2011.
• Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda. Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System, 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 4C4-4, Aug. 2011.
• K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda. Observation of single-electron regime in a silicon quantum dot by a single-electron transistor, the 19th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS 19), Tu-P-49, July 2011.
• Y. Fukuoka, T. Kodera, T. Otsuka, K. Takeda, T. Obata, K. Yoshida, K. Sawano, K Uchida, Y. Shiraki, S. Tarucha, S. Oda. Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact, IEEE Silicon Nanoelectronics Workshop, No. 5-17, June 2011.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda. Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device, IEEE Silicon Nanoelectronics Workshop, No. 5-12, June 2011.
• Yoshifumi Nakamine, Mohammad R. T. Mofrad, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Ryoichi Ishihara, Shunri Oda. Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System, IEEE Silicon Nanoelectronics Workshop, No. 5-6, June 2011.
• Tetsuo Kodera, Kousuke Horibe, Tomohiro Kambara, Gento Yamahata, Ken Uchida, Yasuhiko Arakawa, Shunri Oda. Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots, 7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011.
• Yoshifumi Nakamine, Ken Someno, Hiroki Nikaido, Masahiro Kouge, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda. Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application, 7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011.
• Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda. Synthesis of small-diameter Ge NW at low temperature for electron device application, 7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011.
• T. Kodera, K. Horibe, W. Lin, T. Kambara, T. Ferrus, A. Rossi, K. Uchida, D. A. Williams, Y. Arakawa, S. Oda. Charge Detection in Silicon Quantum Dots Coupled in Parallel, IEEE Silicon Nanoelectronics Workshop, No. 6-3, May 2011.
• Y. Nakamine, Michiel van der Zwan, Johan van der Cingel, Tetsuo Kodera, Ken Uchida, Ryoichi Ishihara, Shunri Oda. Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System, Materials Research Society, A9.5, Apr. 2011.
• Ian Robertson, Tetsuo Kodera, Yasuko Yanagida, Ken Uchida, Shunri Oda. Constructing Templates for One-dimensional Nanostructure Uusing DNA Origami, Materials Research Society, LL5.6, Apr. 2011.
• T. Ohashi, T. Takahashi, N. Beppu, S. Oda, K. Uchida. Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs, IEDM 2011, pp. 390-393, 2011.
• T. Takahashi, N. Beppu, K. Chen, S. Oda, K. Uchida. Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability, IEDM 2011, pp. 809-812, 2011.
• N. Kadotani, T. Takahashi, K. Chen, T. Kodera, S. Oda, K. Uchida. Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3, EDM2010, Dec. 2010.
• Tomohiro Kambara, Tetsuo Kodera, Gento Yamahata, Ken Uchida, Shunri Oda. Simulation study of charge modulation in coupled quantum dots in silicon, Solid State Devices and Materials Conference, Extended Abstracts, Sept. 2010.
• Berrin Pinar Algul, Tetsuo Kodera, Shunri Oda, Ken Uchida. Study on Device Parameters of Carbon Nanotube FETs to RealizeSteep Subthreshold Slope of less than 60 mV/decade, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Sept. 2010.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda. Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically, Solid State Devices and Materials Conference, Extended Abstracts, Sept. 2010.
• T. Kodera, G. Yamahata, T. Kambara, K. Uchida, C. M. Marcus, S. Oda. Magnetic field dependence of a leakage current in Pauli-spin blockade regime of silicon double quantum dots, School and conference on Spin-based quantum information processing, Aug. 2010.
• Ian C. Robertson, Ken Uchida, Shunri Oda. Artificial Membrane Constructed by one-dimensional Nanostructure using DNA Origami, 7th International Conference – NN10, July 2010.
• M. Saitoh, Y. Nakabayashi, H. Itokawa, M. Murano, I. Mizushima, K. Uchida, T. Numata. Short-Channel Performance and Mobility Analysis of <110>- and <100>-Oriented Tri-Gate Nanowire MOSFETs with Raised Source/Drain Extensions, Symposium on VLSI Technology (VLSI Symp.), pp. 169, June 2010.
• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, H. Mizuta. Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots, IEEE Silicon Nanoelectronics Workshop, June 2010.
• T. Kodera, G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. M. Marcus, S. Oda. Spin-related tunneling in lithographically-defined silicon quantum dots, , 2010 IEEE Silicon Nanoelectronics Workshop, June 2010.
• Ian C. Robertson, K. Uchida, S. Oda. Artificial membrane constructed by one-dimensional nanostructure using DNA origami, Materials Research Society, Apr. 2010.
• G. Yamahata, T. Kodera, T. Kambara, K. Uchida, C. M. Marcus, S. Oda. Pauli Spin Blockade in a Lithographycally-defined Silicon Double Quantum Dot, QNSP2010, Mar. 2010.
• Xin Zhou, Ken Uchida, Shunri Oda. Current fluctuations in three-dimensionally stacked Si nanorystals thin films, Applied Physics Letters, Vol. 96, pp. 092112 (3 pages), Mar. 2010.
• K. Uchida. Hole/Electron Transport in (110) pMOSFETs, China Semiconductor Technology International Conference (CSTIC), I05_16, Mar. 2010.
• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, H. Mizuta. Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots, IOP Quantum Dot Meeting (QDCAM2010), Jan. 2010.
• T. Takahashi, G. Yamahata, J. Ogi, T. Kodera, S. Oda, K. Uchida. Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility, IEDM2009, Dec. 2009.
• J. Ogi, T Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, Hiroshi Mizuta. Electron-phonon interaction in suspended Si double quantum dots, International Microprocesses and Nanotechnology Conference (MNC 2009), Nov. 2009.
• Tetsuya Ishikawa, Hiroki Nikaido, kouichi usami, Ken Uchida, Shunri Oda. Formation of two-dimensional array of Si nanocrystals using nano Si ink, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• T. Nagami, Y. Tsuchiya, K. Uchida, hiroshi mizuta, S. Oda. Scaling Analysis of NEMS Memory Devices, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Y. Nakamine, T. Kodera, K. Uchida, S. Oda. Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching, 22nd Int. Microprocess and Nanotechnology Conference (MNC 2009), Oct. 2009.
• Liang He, kouichi usami, Ken Uchida, Shunri Oda. Preparation and characterization of P-doped Ge nanowires by VLS-CVD, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, Shunri Oda. Electron transport through coupled Si quantum dots toward quantum information devices, G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists, Oct. 2009.
• J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, H. Mizuta, S. Oda. Suspended quantum dot devices for sensor or quantum bit applications, G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists, Oct. 2009.
• Y.Nakamine, T.Kodera, K.Uchida, Shunri Oda. Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Berrin Pinar Algul, Ken Uchida, Shunri Oda. Modeling of Band-to-Band Tunneling in MOS Structures, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Jean L. Tarun, Shaoyun Huang, Ken Uchida, Naoki Fukata, Koji Ishibashi, Shunri Oda. Transport Properties of Silicon Nanowire with Ferromagnetic Leads, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• D. Hippo, Y. Nakamine, K. Uchida, S. Oda. Thermotherapy for Cancer Using Silicon Nanocrystals, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Ian C. Robertson, Ken Uchida, Shunri Oda. Artificial Membrane Interfacial Layers via 1D nanostructures for Bio-Sensors, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• T. Kodera, G. Yamahata, T. Kambara, Thierry Ferrus, D. A. Williams, K. Uchida, Yasuhiko Arakawa, S. Oda. Fabrication and characterization of silicon double quantum dots towards spin qubits, G-COE PICE International Symposium on Silicon Nano Devices in 2030:, Oct. 2009.
• Chao Yan, Ken Uchida, Shunri Oda. Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Xin Zhou, Ken Uchida, Shunri Oda. Carrier transport in ensemble of Si nanocrystals prepared by VHF plasma process,, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2009.
• Zhou, K Uchida, SHUNRI ODA. Characteristics of current oscillations phenomenon in Si nanorystal thin films, 第70回応用物理学会学術講演会, Sept. 2009.
• 晏超, 内田 建, 小田俊理. MEMS(NEMS) 共振器設計のための体系的最適化法, 、第70回応用物理学会学術講演会, Sept. 2009.
• 二階堂広基, 石川哲也, 内田 建, 小田俊理. Langmuir-Blodgett法によるナノ結晶シリコン量子ドットの集積配列, 第70回応用物理学会学術講演会, Sept. 2009.
• T. Ishikawa, H. Nikaido, Kouichi Usami, K. Uchida, S. Oda. Fabrication of nano Si ink and two-dimensionally assembled Si nanocrystals, 35th International Conference on Micro & Nano Engineering, Sept. 2009.
• Xin Zhou, Ken Uchida, Hiroshi Mizuta, Shunri Oda. Current oscillations observed for sparse Si nanorystal thin films, IEEE Silicon Nanoelectronics Workshop, June 2009.
• Xin Zhou, Ken Uchida, Hiroshi Mizuta, Shunri Oda. Lateral conduction of Si nanorystals by thin film transistor structures, IEEE Silicon Nanoelectronics Workshop, June 2009.
• Tomoyuki Kurihara, Yohei Nagahama, Daisuke Kobayshi, Hiroki Niikura, Yoshishige Tsuchiya, Hiroshi Mizuta, Hiroshi Nohira, Ken Uchida, Shunri Oda. Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide, IEEE Silicon Nanoelectronics Workshop, June 2009.
• J. Ogi, T. Ferrus, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, Hiroshi Mizuta. Study of single-electron transport via suspended double silicon quantum dots, IEEE Silicon Nanoelectronics Workshop, June 2009.
• Aditi Goyal, Muhammad A Rafiq, Ken Uchida, Shunri Oda. Parameter Randomness Analysis of Multiple Tunnel Junctions, IEEE Silicon Nanoelectronics Workshop, June 2009.
• K. Uchida. Carrier Transport and Stress Engineering in Advanced Nanoscale MOS Transistors, Proceedings of International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), pp. 6-7, Apr. 2009.
• K. Uchida, M. Saitoh. Uniaxial Stress Engineering in (100) and (110) CMOS Transistors, Physics and Chemistry of Surfaces and Interfaces (PCSI-36), Jan. 2009.
• M. Saitoh, N. Yasutake, Y. Nakabayashi, K. Uchida, T. Numata. Understanding of Strain Effects on High-Field Carrier Velocity in (100) and (110) CMOSFETs under Quasi-Ballistic Transport, Technical Digest of International Electron Device Meeting (IEDM), pp. 469-472, 2009.
• Y. Nakabayashi, T. Ishihara, T. Numata, K. Uchida, S. Takagi. Inversion-Layer Mobility Limited by Coulomb Scattering on Si (100), (110) and (111) n-MOSFETs, Ext Abst. of the International Conference on Solid State Devices and Materials (SSDM), 1052-1053, 2009.
• S. Kobayashi, M. Saitoh, Y. Nakabayashi, T. Ishihara, T. Numata, K. Uchida. Experimental Study on Hall Factor in Ultrathin-Body SOI n-MOSFETs, Ext Abst. of the International Conference on Solid State Devices and Materials (SSDM), pp. 1054-1055, 2009.
• M. Saitoh, N. Yasutake, Y. Nakabayashi, K. Uchida, T. Numata. Physical Understanding of Vth and Idsat Variations in (110) CMOSFETs, Symposium on VLSI Technology (VLSI Symp.), pp. 114-115, 2009.
• S. Kobayashi, T. Ishihara, M. Saitoh, Y. Nakabayashi, T. Numata, K. Uchida. Successful measurements of Electron energy dependence of interface-trap-induced scattering in N-MOSFETs,, IEEE International Reliability Physics Symposium, pp. 26-30, 2009.
• Chao Yan, Ken Uchida, Shunri Oda. Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling, G-COE PICE International Symposium on Silicon Nano Devices in 2030, Oct. 2008.
• Gento. Yamahata, Ken. Uchida, Shunri. Oda, Yoshishige. Tsuchiya, Hiroshi. Mizuta. Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots, Sept. 2008.

国内会議発表 (査読有り)

• 小田俊理, 内田 建. シリコンナノテクノロジー：１次元、０次元、その先は？, 第70回応用物理学会学術講演会, Sept. 2009.
• 村木太郎, 李 伝波, 増渕和典, 宇佐美浩一, 内田 建, 小田俊理. ラジカル窒化を用いたゲルマニウムナノワイヤデバイスの作製, 第56回応用物理学関係連合講演会, Apr. 2009.

国際会議発表 (査読なし・不明)

• Tetsuo Kodera, Tomohiro Kambara, Kousuke Horibe, Gento Yamahata, Ken Uchida, Shunri Oda. Silicon Quantum Dots for Spin-Based Quantum Information Processing, , 2nd Japanese-Russian young scientists conference on nano-materials and nano-technology, Sept. 2010.

国内会議発表 (査読なし・不明)

• 高橋綱己, 別府伸耕, 陳君ろ, 小田俊理, 内田建. バルク／SOI FinFET の自己加熱およびアナログ特性の最適化, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 新留彩, 高橋綱己, 小田俊理, 内田建. グラフェン抵抗変化型メモリの3端子動作に関する研究, 第61回応用物理学会春季学術講演会, Mar. 2014.
• 黒澤裕也, 角谷直哉, 高橋綱己, 大橋輝之, 小田俊理, 内田建. 不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 高橋綱己, 小田俊理, 内田建. 熱特性モデル化による回路中のFinFET動作温度評価手法, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 新留彩, 高橋綱己, 小田俊理, 内田建. グラフェン抵抗変化型メモリのSET/RESET条件に関する研究, 第74回応用物理学会秋季学術講演会, Sept. 2013.
• 小寺 哲夫, 堀部 浩介, 蒲原 知宏, 山端 元音, 内田 建, 荒川 泰彦, 小田 俊理. 電子スピン量子ビットに向けた少数電子シリコン量子ドットの実現, 第58回応用物理学関係連合講演会, 25p-KV-1, Mar. 2013.
• 大橋輝之, 小田俊理, 内田建. 歪みによる電子移動度向上へMOS界面における変形ポテンシャル上昇が与える影響, 第60回応用物理学会春季学術講演会, 2013.
• 新留 彩, 別府伸耕, 高橋綱己, 小田俊理, 内田 建. 架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性, 第60回応用物理学会春季学術講演会, 2013.
• 高橋綱己, 別府伸耕, 小田俊理, 内田建. 熱配慮設計によるFinFETアナログ特性の最適化, 第60回応用物理学会春季学術講演会, 2013.
• 別府伸耕, 小田俊理, 内田 建. AC コンダクタンス法及びパルスIV 法による自己発熱抑制時のSOI MOSFETドレイン電流評価, 第59回応用物理学関係連合講演会, 17a-A1-8, Mar. 2012.
• 福岡佑二, 小寺哲夫, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田建, 白木靖寛, 樽茶清悟, 小田俊理. Capping gate構造を有するSi/SiGe量子ドットの作製と評価, 2012年春季第59回応用物理学関係連合学術講演会, Mar. 2012.
• 高橋綱己, 別府伸耕, 陳 君璐, 小田俊理, 内田 建. デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計, 第59回応用物理学関係連合講演会, 17a-A1-9, Mar. 2012.
• 大橋輝之, 高橋綱己, 内田 建, 小田俊理. MOS 界面における変形ポテンシャルの上昇, 第59回応用物理学関係連合講演会, 17a-A1-3, Mar. 2012.
• 黒澤裕也, 角谷直哉, 高橋綱己, 大橋輝之, 小田俊理, 内田 建. ナノ薄膜SOI における不純物のイオン化エネルギー増大, 第59回応用物理学関係連合講演会, 17a-A1-4, Mar. 2012.
• 中峯嘉文, 小寺哲夫, 河野行雄, 内田 建, 小田俊理. 無水フッ酸エッチングによるシリコンナノ結晶の自然酸化膜の除去, 第59回応用物理学関係連合講演会, 17p-GP11-9, Mar. 2012.
• 小寺哲夫, 堀部浩介, 林文城, 蒲原知宏, T. Ferrus, A. Rossi, 内田建, D. A. Williams, 荒川泰彦, 小田俊理. シリコン量子ドットを用いた電荷検出, 日本物理学会2012年年次大会, Mar. 2012.
• 宮本恭幸, 山田真之, 内田建. InGaAs MOSFETにおけるソース充電時間の検討, 電子情報通信学会技術研究報告, Jan. 2012.
• 別府伸耕, 小田俊理, 内田 建. ACコンダクタンス法を用いた実験手法に対する検証, 第73回応用物理学会学術講演会, 2012.
• 新留 彩, 福田祐樹, 小田俊理, 内田 建. ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明, 第73回応用物理学会学術講演会, 2012.
• 新留 彩, 福田裕樹, 小田俊理, 内田 建. 架橋多層グラフェンナノリボンにおける電荷数の温度依存性, 第59回応用物理学関係連合講演会, 2012.
• 大橋輝之, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明, 秋季 第73回応用物理学会学術講演会, 2012.
• 高橋綱己, 別府伸耕, 小田俊理, 内田 建. デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出, 第73回応用物理学会学術講演会, 2012.
• 小寺哲夫, 堀部浩介, 蒲原知宏, 山端元音, 内田建, 荒川泰彦, 小田俊理. シリコン量子ドットにおけるスピン効果と磁場依存性, 日本物理学会2011年秋季大会, Sept. 2011.
• 堀部浩介, 小寺哲夫, 蒲原知宏, 内田 建, 小田俊理. シリコン量子ドットと単電子トランジスタ電荷センサーの静電結合評価, 第72回応用物理学会学術講演会, pp. 1p-P10-2, Aug. 2011.
• 福岡佑二, 小寺哲夫, 大塚朋廣, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田 建, 白木靖寛, 樽茶清悟, 小田俊理. Si/SiGe量子ドット構造のシミュレーションと作製, 第72回応用物理学会学術講演会, pp. 1p-P10-3, Aug. 2011.
• 大橋輝之, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. 低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価, 第72回応用物理学会学術講演会, pp. 2a-J-11, Aug. 2011.
• 小寺哲夫, 堀部浩介, 林 文城, 蒲原知宏, Thierry Ferrus, Alessandro Rossi, 内田 建, David Williams, 荒川泰彦, 小田俊理. 並列結合したシリコン量子ドットにおける電荷検出実験, 第72回応用物理学会学術講演会, pp. 2p-K-5, Aug. 2011.
• Berrin Pinar Algul, Tetsuo Kodera, SHUNRI ODA, Ken Uchida. NTFETsにおけるトンネル・リーク電流の抑制に関する研究, 第72回応用物理学会学術講演会, pp. 30a-ZJ-4, Aug. 2011.
• 中峯嘉文, Mohammad Mofrad, Michiel Van Der Zwan, Johan Van Der Cingel, 小寺哲夫, 内田 建, 石原良一, 小田俊理. レーザアニーリングによるシリコンナノ結晶薄膜の電気特性への影響, 第72回応用物理学会学術講演会, pp. 2p-ZG-2, Aug. 2011.
• 福岡佑二, 小寺哲夫, 大塚朋廣, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田 建, 白木靖寛, 樽茶清悟, 小田俊理. Si/SiGe 量子ドット作製に向けたPd トップゲート動作点の低電圧化, 第58回応用物理学関係連合講演会, 26p-KV-6, Mar. 2011.
• 林 文城, 小寺哲夫, Thierry Ferrus, Alessandro Rossi, David Williams, 内田 建, 小田俊理. シリコン単電子トランジスタを電荷センサとした電子数変化の検出, 第58回応用物理学関係連合講演会, 27a-KC-7, Mar. 2011.
• 中峯嘉文, Michiel Van Der Zwan, Johan Van Der Cingel, 小寺哲夫, 内田 建, 石原良一, 小田俊理. VHF プラズマにより作製されたシリコンナノ結晶のレーザアニーリング, 第58回応用物理学関係連合講演会, 27p-BA-4, Mar. 2011.
• 角谷直哉, 高橋綱己, 大橋輝之, 小寺哲夫, 小田俊理, 内田 建. 高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係, 第58回応用物理学関係連合講演会, Mar. 2011.
• 堀部浩介, 小寺哲夫, 蒲原知宏, 内田 建, 小田俊理. チャージセンサによるシリコン量子ドットの少数電子状態観測, 第58回応用物理学関係連合講演会, Mar. 2011.
• 高下雅央, 石川哲也, 宇佐美浩一, 小寺哲夫, 内田 建, 小田俊理. 凹凸基板を用いたディップコーティング法によるナノ結晶シリコンの集積化技術, 第71回応用物理学会学術講演会, 17a-ZB-4, Sept. 2010.
• 福岡佑二, 小寺哲夫, 大塚朋廣, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田 建, 白木靖寛, 樽茶清悟, 小田俊理. Si/SiGe系2DEGのPdショットゲート制御による結合量子ドットの作製, 第71回応用物理学会学術講演会, 14a-NC-1, Sept. 2010.
• ベッリン ピナー アルグル, 小寺哲夫, 小田俊理, 内田 建. CNTトランジスタにおけるバンド間トンネルを利用したS係数60 mV/dec未満を実現するデバイスパラメータの研究, 第71回応用物理学会学術講演会, 15a-ZK-1, Sept. 2010.
• 小林大助, 栗原智之, 小寺哲夫, 内田 建, 野平博司, 小田俊理. Pr系酸化膜を用いたヘテロ積層構造トンネル膜の電気特性シミュレーションと作製及び評価, 第71回応用物理学会学術講演会, 17a-ZE-2, Sept. 2010.
• 引田和宏, 小寺哲夫, 小田俊理, 内田 建. InPに格子整合したIn0.53Ga0.47Asバンド構造の一軸歪み依存性, 第71回応用物理学会学術講演会, 16a-ZE-10, Sept. 2010.
• 角谷直哉, 高橋綱己, 小寺哲夫, 小田俊理, 内田 建. pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価, 第71回応用物理学会学術講演会, 16a-ZE-2, Sept. 2010.
• kouichi usami, Tetsuo Kodera, Ken Uchida, SHUNRI ODA. Small-diameter Ge nanowires grown at 280°C by VLS－CVD, 第71回応用物理学会学術講演会, 15a-ZD-4, Sept. 2010.
• 蒲原知宏, 小寺哲夫, 山端元音, 内田 建, 小田俊理. サイドゲートとトップゲートを用いたシリコン二重結合量子ドット形成シミュレーション, 第71回応用物理学会学術講演会, 17p-ZE-1, Sept. 2010.
• 小寺哲夫, 山端元音, 蒲原知宏, 内田 建, 小田俊理. シリコン結合量子ドットにおけるスピン効果の観測, 第71回応用物理学会学術講演会, 14p-NC-6, Sept. 2010.
• ロバートソン イアン, 内田 建, 小田 俊理. Utilizing electoosmotic affects in aligning DNA functionalized nanowires after being anchored onto a pattern surface, 第57回応用物理学関係連合講演会, 19p-ZE-4, Mar. 2010.
• 小木 純, Thierry Ferrus, 小寺哲夫, 土屋良重, 内田 建, David Williams, 水田 博, 小田俊理. シリコン宙づり構造内の結合二重量子ドットの電子フォノン相互作用, 第57回応用物理学関係連合講演会, 20a-P14-13, Mar. 2010.
• 永見 佑, 土屋良重, 水田 博, 内田 建, 小田俊理. エレクトロメカニカルシミュレーションによるNEMSメモリのスケーリング特性, 第57回応用物理学関係連合講演会, 17p-B-12, Mar. 2010.
• 蒲原知宏, 小寺哲夫, 山端元音, 内田 建, 小田俊理. ダブルトップゲートを有するシリコン量子ドットのシミュレーションと作製, 第57回応用物理学関係連合講演会, 19a-B-3, Mar. 2010.
• Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Syunri Oda. Simulation of silicon double quantum dots device fabricated by combining lithographical and electrostatical approaches, 第57回応用物理学関係連合講演会, 19a-B-4, Mar. 2010.
• 中峯嘉文, 小寺哲夫, 内田 建, 小田俊理. VHFプラズマパワーの変化によるシリコンナノ結晶の縮小化, 第57回応用物理学関係連合講演会, 17a-TG-10, Mar. 2010.
• 高橋綱己, 山端元音, 小木 純, 小寺哲夫, 小田俊理, 内田 建. 強磁場印加による(110) pMOSFETサブバンド構造の直接的観測, 第57回応用物理学関係連合講演会, 18a-B-2, Mar. 2010.
• 山端元音, 小寺哲夫, 水田 博, 内田 建, 小田俊理. トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御, 第70回応用物理学会学術講演会, Sept. 2009.
• 中峯嘉文, 内田 建, 小田俊理. VHFプラズマにより作製されたSi量子ドットのPドーピング, 第56回応用物理学関係連合講演会, Apr. 2009.
• 永見 佑, 土屋良重, 斎藤慎一, 新井 唯, 嶋田壽一, 水田 博, 内田 建, 小田俊理. pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの, 第56回応用物理学関係連合講演会, Apr. 2009.
• 小木 純, Thierry Ferrus, 土屋良重, 内田 建, David Williams, 水田 博, 小田俊理. Siナノブリッジチャネルに埋め込まれた結合二重量子ドット特性観測, 第56回応用物理学関係連合講演会, Mar. 2009.
• 山端元音, 土屋良重, 水田 博, 内田 建, 小田俊理. シリコン量子ドットデバイスの制御性向上に関する検討, 第56回応用物理学関係連合講演会, Mar. 2009.
• Xin Zhou, 中峯嘉文, 内田 建, 小田俊理. Trap effects on carrier transport in Si nanocrystals thin film, 第56回応用物理学関係連合講演会, Mar. 2009.

学位論文

• シリコン単電子素子とその集積回路への応用に関する研究,  本文,  Doctor of Engineering,  東京大学,  2002/09/--, 

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