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Publication List - SATOSHI SUGAHARA (409 entries)
Journal Paper
-
S. Sugahara.
Spin Metal-Oxide-Semiconductor Field-Effect Transistors (Spin MOSFETs) for Spin-Electronic Integrated Circuits,
IEE Proc. Circuits, Device-Systems,
Vol. 152,
No. 4,
pp. 355-365,
2005.
-
S.Sugahara,
M.Tanaka.
A Spin Metal-Oxide-Semiconductor Field-effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain,
Appl. Phys. Lett.,
Vol. 84,
No. 13,
pp. 2307-2309,
2004.
-
T. Akushichi,
Y. Takamura,
Y. Shiotsu,
S. Yamamoto,
S. Sugahara.
Spin Injection Behavior of CoFe/MgO/Si Tunnel Contacts: Effects of Radical Oxygen Annealing,
J. Electron. Mater.,
vol. 52,
pp. 6902-6910,
Aug. 2023.
-
Yusaku Shiotsu,
Satoshi Sugahara.
Binarized Neural Network Accelerator Macro Using Ultralow-Voltage Retention SRAM for Energy Minimum-Point Operation,
IEEE J. Explor. Solid-State Comput. Devices Circuits,
vol. 8,
pp. 134-144,
Dec. 2022.
-
Hayato Yoshida,
Yusaku Shiotsu,
Daiki Kitagata,
Shuichiro Yamamoto,
Satoshi Sugahara.
Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches,
IEEE Open Journal of Circuits and Systems,
Vol. 2,
pp. 520-533,
Aug. 2021.
-
Y. Shiotsu,
S. Yamamoto,
Y. Shuto,
H. Funakubo,
M. K. Kurosawa,
S. Sugahara.
Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits,
IEEE Trans. on Electron Devices,
vol. 67,
no. 9,
pp. 3852-3860,
Aug. 2020.
-
Y. Shiotsu,
T. Seino,
T. Kondo,
S. Sugahara.
Modeling and Design of Thin-Film π-Type Micro Thermoelectric Generator Using Vacuum/Insulator-Hybrid Isolation for Self-Powered Wearable Devices,
IEEE Trans. on Electron Devices,
vol. 67,
no. 9,
pp. 3834-3842,
July 2020.
-
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
Proactive useless data flush architecture for nonvolatile SRAM using magnetic tunnel junctions,
Feb. 2020.
-
Y. Shiotsu,
T. Seino,
N. Chiwaki,
S. Sugahara.
Thin-Film π-Type Micro TEG Using Vacuum/Insulator-Hybrid Isolation with Convex-Shape Hot-Plate Module Structure for Wearable Device Applications,
Journal of Physics: Conference Series,
Vol. 1407,
pp. 1-4,
Dec. 2019.
-
D. Kitagata,
S. Yamamoto,
S. Sugahara.
Design and energy-efficient architectures for nonvolatile static random access memory using magnetic tunnel junctions,
Jpn. J. Appl. Phys,
Vol. 58,
No. SB,
pp. 1-10,
Mar. 2019.
-
N Chiwaki,
T Seino,
S Sugahara.
Design and Performance of Transverse-Type Thin-Film Nano-Thermoelectric Generators,
Journal of Physics: Conf. Series,
Vol. 1052,
pp. 012133/1-4,
July 2018.
-
N. Chiwaki,
T. Seino,
S. Sugahara.
Design and performance of transverse-type thin-film micro thermoelectric generators,
J. Micromech. Microeng.,
Vol. 28,
No. 9,
pp. 094003/1-6,
June 2018.
-
Y. Takamura,
Y. Shuto,
S. Yamamoto,
H. Funakubo,
M. Kurosawa,
S. Nakagawa,
S. Sugahara.
Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM,
Solid-State Electron.,
vol. 128,
no. Supplement C,
pp. 194-199,
Oct. 2016.
Official location
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T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing,
J. Appl. Phys.,
AIP Publishing LLC,
Vol. 117,
No. 17,
pp. 17B531/1-4,
May 2015.
-
Y. Takamura,
T. Akushichi,
Y. Shuto,
S. Sugahara.
Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration,
J. Appl. Phys.,
AIP Publishing LLC,
Vol. 117,
No. 17,
pp. 17D919/1-4,
Apr. 2015.
-
Y. Kawame,
T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact,
J. Appl. Phys.,
AIP Publishing LLC,
Vol. 117,
No. 17,
pp. 17D151/1-3,
Apr. 2015.
-
R. Nakane,
Y. Shuto,
H. Sukegawa,
Z.C. Wen,
S. Yamamoto,
S. Mitani,
M. Tanaka,
K. Inomata,
S. Sugahara.
Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip,
Solid-State Electronics,
Elsevier,
Vol. 102,
pp. 52-58,
Dec. 2014.
-
Y. Takamura,
T. Akushichi,
A. Sadono,
T. Okishio,
Y. Shuto,
S. Sugahara.
Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices,
J. Appl. Phys.,
AIP Publishing LLC.,
vol. 115,
no. 17,
pp. 17C307/1-3,
Apr. 2014.
-
Y. Takamura,
K. Hayashi,
Y. Shuto,
R. Nakane,
S. Sugahara.
Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors,
J. Electron. Mater.,
Springer,
vol. 41,
no. 5,
pp. 954-958,
Apr. 2012.
-
Y. Takamura,
S. Sugahara.
Analysis and control of the Hanle effect in metal–oxide–semiconductor inversion channels,
J. Appl. Phys.,
American Institute of Physics,
vol. 111,
Issue 7,
pp. 07C323/1-3,
Mar. 2012.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Evaluation and control of break-even time of nonvolatile SRAM based on spin-transistor architecture with spin-transfer-torque MTJs,
J. Appl. Phys.,
vol. 51,
no. 4,
pp. 040212/1-3,
2012.
-
Y. Takamura,
S. Sugahara.
Analysis and Design of Hanle-Effect Spin Transistors at 300 K,
IEEE Magn. Lett.,
Vol. 2,
pp. 3000404/1-4,
Oct. 2011.
-
Shinsuke Yada,
Pham Nam Hai,
Satoshi Sugahara,
Masaaki Tanaka.
Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates,
Journal of applied physics,
Vol. 110,
p. 073903,
Oct. 2011.
-
S. Yamamoto,
Y. Shuto,
S. Sugahara.
Nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs for power-gating systems,
IET Electronics Letters,
vol. 47,
no. 18,
pp. 1027-1029,
Sept. 2011.
-
Y. Takamura,
T. Sakurai,
R. Nakane,
Y. Shuto,
S. Sugahara.
Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing,
J. Appl. Phys.,
American Institute of Physics,
Vol. 109,
no. 7,
pp. 07B768/1-3,
Apr. 2011.
-
Y. Takamura,
R. Nakane,
S. Sugahara.
Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources,
J. Appl. Phys.,
American Institute of Physics,
Vol. 107,
pp. 09B111/1-3,
Apr. 2010.
-
K. Hayashi,
Y. Takamura,
R. Nakane,
S. Sugahara.
Formation of Co2FeSi/SiOxNy/Si tunnel junctions for Si-based spin transistors,
J. Appl. Phys.,
American Institute of Physics.,
Vol. 107,
pp. 09B104/1-3,
Apr. 2010.
-
Y. Shuto,
R. Nakane,
W. H. Wang,
H. Sukegawa,
S. Yamamoto,
M. Tanaka,
K. Inomata,
S. Sugahara.
A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET,
Appl. Phys. Exp.,
vol. 3,
no. 1,
pp. 013003/1-3,
2010.
-
Shuu'ichirou Yamamoto,
Yusuke Shuto,
Satoshi Sugahara.
Nonvolatile SRAM (NV-SRAM) Using Resistive Switching Devices: Variable-Transconductance MOSFET Approach,
Jpn. J. Appl. Phys,
vol. 49,
no. 4,
pp. 040209/1-3,
2010.
-
S. Yamamoto,
Satoshi Sugahara.
Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications,
Jpn. J. Appl. Phys.,
vol. 49,
no. 9,
pp. 090204/1-3,
2010.
-
Y. Shuto,
M. Tanaka,
S. Sugahara.
Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Epitaxially Grown on Si(001) Substrates,
Jpn. J. Appl. Phys.,
vol. 47,
no. 9,
pp. 7108-7112,
June 2009.
-
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology,
Jpn. J. Appl. Phys.,
Vol. 48,
No. 4,
pp. 043001-1-7,
Apr. 2009.
-
Y. Takamura,
R. Nakane,
S. Sugahara.
Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing,
J. Appl. Phys.,
American Institute of Physics,
vol. 105,
no. 7,
pp. 07B109/1-3.,
Apr. 2009.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Nonvolatile SRAM architecture using MOSFET-based spin-transistors,
J. Appl. Phys.,
Vol. 105,
pp. 07C933/1-3,
2009.
-
S. Yamamoto,
S. Sugahara.
Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture,
Jpn. J. Appl. Phys.,
vol. 48,
no. 4,
pp. 043001/1-7,
2009.
-
Y. Takamura,
A. Nishijima,
Y. Nagahama,
R. Nakane,
S. Sugahara.
Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors,
ECS Trans.,
The Electrochemical Society,
vol. 16,
no. 10,
pp. 945-952,
Oct. 2008.
-
Y. Takamura,
R. Nakane,
H. Munekata,
S. Sugahara.
Characterization of Half-Metallic L21-Phase Co2FeSi Full-Heusler Alloy Thin Films Formed by Rapid Thermal Annealing,
J. Appl. Phys.,
American Institute of Physics,
vol. 103,
no. 7,
pp. 07D719/1-3,
Apr. 2008.
-
S. Takagi,
T. Irisawa,
T. Tezuka,
T. Numata,
S. Nakaharai,
N. Hirashita,
Y. Moriyama,
K. Usuda,
E. Toyoda,
S. Dissanayake,
M. Shichijo,
R. Nakane,
S. Sugahara,
M. Takenaka,
N. Sugiyama.
Carrier-transport-enhanced channel CMOS for improved power consumption and performance,
IEEE Trans. Electron Devices,
Vol. 55,
No. 1,
pp. 21-39,
Jan. 2008.
-
Y. Shuto,
M. Tanaka,
S. Sugahara.
Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics,
ECS Transactions,
vol. 16,
no. 10,
pp. 953-960,
2008.
-
Pham Nam Hai,
Satoshi Sugahara,
Masaaki Tanaka.
Reconfigurable Logic Gates Using Single-Electron Spin Transistors,
Japanese Journal of Applied Physics,
Vol. 46,
No. 10A,
pp. 6579–6585,
Oct. 2007.
-
S.Takagi,
T.Maeda,
N.Taoka,
M.Nishizawa,
Y.Morita,
K.Ikeda,
Y.Yamashita,
M.Nishikawa,
H.Kumagai,
R.Nakane,
S.Sugahara,
N.Sugiyama.
Gate Dielectric Formation and MIS Interface Characterization on Ge,
Microelectronic Engineering,
Vol. 84,
No. 9-10,
pp. 2314-2319,
Sept. 2007.
-
M. Shichijo,
R. Nakane,
S. Sugahara,
S. Takagi.
Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique,
Jpn. J. Appl. Phys.,
Vol. 46,
No. 9A,,
pp. 5930–5934,
Sept. 2007.
-
Takuya Hoshii,
Satoshi Sugahara,
Shin-ichi Takagi.
Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors,
Japanese Journal of Applied Physics,
Vol. 46,
No. 4B,
pp. 2122-2126,
Apr. 2007.
Official location
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T.Uehara,
H.Matsubara,
S.Sugahara,
S.Takagi.
Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy,
Jpn. J. Appl. Phys.,
Vol. 46,
No. 4B,
pp. 2117-2121,
Apr. 2007.
-
T.Hoshii,
S.Sugahara,
S.Takagi.
Effect of Tensile Strain on Gate Current of Strained-Si n-MOSFETs,
Jpn. J. Appl. Phys.,
Vol. 46,
No. 4B,
pp. 2122-2126,
Apr. 2007.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Structural and Magnetic Properties of Epitaxially Grown Ge1-xFex Thin Films: Fe Concentration Dependence,
Appl. Phys. Lett.,
Vol. 90,
No. 13,
pp. 132512/1-3,
Mar. 2007.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Epitaxial Growth and Magnetic Properties of a New Group-IV Ferromagnetic Semiconductor: Ge1-xFex,
Physica Status Solidi C,
Vol. 3,
No. 12,
pp. 4110-4114,
2006.
-
S.Shuto,
M.Tanaka,
S.Sugahara.
Magneto-Optical Properties of a New Group IV Ferromagnetic Semiconductor Ge1-xFex Grown by Low-Temperature Molecular Beam Epitaxy”, . vol.99, no.8, 2006, pp.08D516/1-3,
J. Appl. Phys,
Vol. 99,
No. 8,
pp. 08D516/1-3,
2006.
-
R.Nakane,
M.Tanaka,
S.Sugahara.
Preparation and Characterization of Ferromagnetic DO3-phase Fe3Si Thin Films on Silicon-on-Insulator Substrates for Si-based Spin-Electronic Device Applications,
Appl. Phys. Lett.,
Vol. 89,
No. 19,
pp. 192503/1-3,
2006.
-
S.Sugahara,
K.L. Lee,
S. Yada,
M.Tanaka.
Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films,
Jpn. J. Appl. Phys.,
Vol. 44,
No. 48,
pp. L1426-L1423,
2005.
-
S.Sugahara,
M.Tanaka.
A Spin Metal-Oxide-Semiconductor Field-Effect Transistor (Spin MOSFET) with a Ferromagnetic Semiconductor for the Channel,
J. Appl. Phys.,
Vol. 97,
No. 10,
pp. 10D503/1-3,
2005.
-
A. M. Nazmul,
Tomohiro Amemiya,
Yusuke Shuto,
Satoshi Sugahara,
Masaaki Tanaka.
High temperature ferromagnetism in GaAs-Based heterostructures with Mn δ doping,
Phys. Rev. Lett.,
Vol. 95,
No. 017201,
2005.
Official location
Book
International Conference (Reviewed)
-
H. Kumagai,
Y. Shiotsu,
S. Sugahara.
Modeling and design of transverse-type micro thermoelectric generator using silicon nanowires,
IEEE International Conference on Micro Electro Mechanical Systems (IEEE MEMS) 2021,
Jan. 2021.
-
D. Kitagata,
S. Yamamoto,
S. Sugahara.
A New Store Energy and Latency Reduction Architecture for Nonvolatile SRAM Using STT-MTJs: Proactive Useless Data Flush Architecture,
IEEE International Electron Devices Meeting (IEDM) 2019 MRAM special session,
Dec. 2019.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
HIROSHI FUNAKUBO,
Minoru Kuribayashi Kurosawa,
SATOSHI SUGAHARA.
Design of New Piezoelectronic Transistors and Their Ultralow-Voltage SRAM Application,
IEEE 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon,
Apr. 2019.
-
Y. Shiotsu,
T. Okubo,
H. Kumagai,
S. Sugahara.
Design and Performance of Silicon Nanowire Micro Thermoelectric Generators,
IEEE 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon,
Apr. 2019.
-
Y. Shiotsu,
T. Seino,
N. Chiwaki,
S. Sugahara.
Thin-Film π-Type Micro TEG Using Vacuum/Insulator-Hybrid Isolation with Convex-Shape Hot-Plate Module Structure for Wearable Device Applications,
International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS),
PT-08c,
Dec. 2018.
-
D. Kitagata,
S. Yamamoto,
S. Sugahara.
Design and Performance of Virtually Nonvolatile Retention Flip-Flop Using Dual-Mode Inverters,
2nd New Generation of Circuits & Systems Conference (NGCAS2018),
pp. 182-185,
Nov. 2018.
-
Kitagata,
H. Yoshida,
S. Yamamoto,
S. Sugahara.
Virtually Nonvolatile Retention SRAM cell Using Dual-Mode Inverters,
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference 2018),
Oct. 2018.
-
D. Kitagata,
S. Yamamoto,
S. Sugahara.
A New Architecture of Store Energy and Latency Reduction for Nonvolatile SRAM Based on Spintronics/CMOS-Hybrid Technology,
2018 International Conference on Solid State Device and Materials (SSDM2018),
Sept. 2018.
-
Y. Shiotsu,
S. Yamamoto,
Y. Shuto,
H. Funakubo,
M. K. Kurosawa,
S. Sugahara.
Design and circuit performance of a new piezoelectronic transistor,
2018 IEEE Silicon Nanoelectronics Workshop (SNW 2018),
P2-5,
June 2018.
-
D. Kitagata,
S. Yamamoto,
S. Sugahara.
Virtually Nonovolatile Retention Flip-Flop Using FinFET Technology,
2018 IEEE Silicon Nanoelectronics Workshop (SNW 2018),
June 2018.
-
T. Seino,
N. Chiwaki,
S. Yamashita,
S. Sugahara.
Design and performance of pi-type thin-film nano-teg using vacuum/sio2-hybrid insulation module structure,
IEEE Electron Devices Technology and Manufacturing Conference 2018 (EDTM2018),
Mar. 2018.
-
D. Kitagata,
S. Yamamoto,
S. Sugahara.
Hierarchical Store-Free Architecture for Nonvolatile SRAM Using STT-MTJs,
IEEE International Electron Devices Meeting (IEDM) MRAM special session 2017,
Dec. 2017.
-
T. Seino,
N. Chiwaki,
S. Yamashita,
S. Sugahara.
Design and performance of p-type thin-film nano-teg modules,
Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS) 2017,
Nov. 2017.
-
Nana Chiwaki,
Toshimasa Seino,
SATOSHI SUGAHARA.
DESIGN AND PERFORMANCE OF TRANSVERSE-TYPE THIN-FILM NANO-TEG MODULES,
Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS) 2017,
Nov. 2017.
-
Sugahara,
Y. Shuto,
S. Yamamoto,
H. Funakubo,
M. K. Kurosawa.
Piezoelectronic Transistor for Low-Voltage High-Speed Integrated Electronics,
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference 2017),
Oct. 2017.
-
T. Akushichi,
D. Kitagata,
Y. Shuto,
S. Sugahara.
Analysis of Spin Accumulation in a Si Channel Using CoFe/MgO/Si Spin Injectors,
Electron Device Technology and Manufacturing Conference,
P-15,
Feb. 2017.
-
D. Kitagata,
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology,
Electron Device Technology and Manufacturing Conference,
4B-5,
Feb. 2017.
-
T. Kondo,
N. Chiwaki,
S. Sugahara.
Design and performance of thin-film μTEG modules for wearable device applications,
Electron Device Technology and Manufacturing Conference,
P-14,
Feb. 2017.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Energy Performance of Nonvolatile Power-Gating SRAM Using SOTB Technology,
46th European Solid-State Device Conference,
Sept. 2016.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Design and Implementation of Nonvolatile Power-Gating SRAM Using SOTB Technology,
International Symposium on Low Power Electronics and Design, San Francisco,
Aug. 2016.
-
T. Akushichi,
D. Kitagata,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors,
2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016),
P1-27,
June 2016.
-
D. Kitagata,
T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices,
2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016),
P2-23,
June 2016.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Nonvolatile Power-gating Architecture for SRAM using SOTB Technology,
016 IEEE Silicon Nanoelectronics Workshop (SNW 2016),
June 2016.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM,
29th IEEE International Conference on Microelectronic Test Structures (ICMTS),
8-1,
Mar. 2016.
-
Y. Takamura,
Y. Shuto,
S. Yamamoto,
H. Funakubo,
M.K. Kurosawa,
S. Nakagawa,
S. Sugahara.
Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs,
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),
pp. 72-75,
Jan. 2016.
Official location
-
T. Kondo,
Y. Kawame,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Fabrication of high-quality Co2FeSi0.5Al0.5/CoFe/MgO/Si spin injectors for Si-channel spin devices,
2015 IEEE Silicon Nanoelectronics Workshop (SNW2015),
June 2015.
Official location
-
D. Kitagata,
T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices,
2015 IEEE Silicon Nanoelectronics Workshop (SNW2015),
June 2015.
Official location
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Comparative study of power-gating architectures for nonvolatile FinFET-SRAM using spintronics-based retention technology,
18th Design, Automation and Test in Europe (DATE15),
Mar. 2015.
-
Y. Kawame,
Y. Shuto,
K. Takahashi,
T. Akushichi,
Y. Takamura,
S. Sugahara.
Fabrication of a CoFe/TiO2/Si tunnel contact and its spin-injector application,
59th Annual Magnetism & Magnetic Materials Conference,
FW-15,
Nov. 2014.
-
T. Akushichi,
Y. Takamura,
Y. Shuto,
S. Sugahara.
Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with the high quality tunnel barriers prepared by radical-oxygen annealing,
59th Annual Magnetism & Magnetic Materials Conference,
FW-11,
Nov. 2014.
-
Y. Takamura,
T. Akushichi,
Y. Shuto,
S. Sugahara.
Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration,
59th Annual Magnetism & Magnetic Materials Conference,
GS-07,
Nov. 2014.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Comparative Study of Power-Gating Architectures for Nonvolatile SRAM Cells Based on Spintronics Technology,
2014 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS2014),
Nov. 2014.
-
Y. Kawame,
T. Akushichi,
Y. Shuto,
Y. Takamura,
S. Sugahara.
Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5 /MgO/Si tunnel contact,
59th Annual Magnetism & Magnetic Materials Conference,
AH-09,
Nov. 2014.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture,
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference 2014),
Oct. 2014.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture,
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014),
Sept. 2014.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Design and performance of nonvolatile SRAM cells based on pseudo-spin-FinFET architecture,
2014 IEEE Silicon Nanotechnology Workshop (SNW2014),
June 2014.
-
Y. Takamura,
A. Sadono,
T. Akushichi,
T. Okishio,
Y. Shuto,
S. Sugahara.
Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices,
The 58th Annual Magnetism and Magnetic Materials (MMM) Conference,
AX-05,
Nov. 2013.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs,
2012 IEEE Silicon Nanotechnology Workshop (SNW2012),
June 2012.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Static noise margin and power-gating efficiency of a new nonvolatile SRAM cell based on pseudo-spin-transistor architecture,
4th IEEE Int. Memory Technology Workshop (IMW2012),
May 2012.
-
T. Okishio,
Y. Takamura,
S. Sugahara.
Low-barrier ferromagnet source/drain MOSFETs using CoFe/Mg/AlOx/Si depinning contacts,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
paper P-42,
pp. 131-132,
Oct. 2011.
-
M. Satoh,
Y. Takamura,
S. Sugahara.
Preparation and characterization of L21-ordered full-Heusler Co2FeSi1-xAlx alloy thin films formed by rapid thermal annealing,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
paper P-41,
pp. 129-130,
Oct. 2011.
-
Y. Takamura,
K. Hayashi,
Y. Shuto,
S. Sugahara.
Formation and structural analysis of half-metallic Co2FeSi/SiOxNy/Si contacts with radical-oxynitridation-SiOxNy tunnel barrier,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
paper P-40,
pp. 127-128,
Oct. 2011.
-
Y. Takamura,
S. Sugahara.
Analysis and design of Hanle-effect spin-transistor,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists,
pp. 125-126,
Oct. 2011.
-
S. Yamamoto,
Y. Shuto,
S. Sugahara.
Nonvolatile power-gating FPGAs based on spin-transistor architecture,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND): Prospects by World’s Leading Scientists,
Oct. 2011.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Nonvolatile SRAM based on spin-transistor architecture for nonvolatile power-gating systems,
International Symposium on Advanced Hybrid Nano Devices (IS-AHND): Prospects by World’s Leading Scientists,
Oct. 2011.
-
Y. Takamura,
S. Sugahara.
Analysis of the Hanle effect in Si MOS inversion channels at 300K,
56th Annual Conf. on Magnetism and Magnetic Materials (MMM),
HB-12,
pp. 548-529,
Oct. 2011.
-
T. Okishio,
Y. Takamura,
S. Sugahara.
Fabrication of spin-MOSFETs using CoFe/Mg/AlOx/Si tunnel junctions for the source and drain,
International Conf. on Solid State Devices and Materials (SSDM),
J-4-4,
p. 31,
Sept. 2011.
Official location
-
M. Satoh,
Y. Takamura,
S. Sugahara.
Characterization of L21-ordered full-Heusler Co2FeSi1-xAlx alloy thin films formed by silicidation technique employing a silicon-on-insulator substrate,
Electronic Materials Conf. (EMC) 2011,
DD-10,
p. 96,
June 2011.
-
Y. Takamura,
K. Hayashi,
Y. Shuto,
S. Sugahara.
Formation of half-metallic tunnel junctions of Co2FeSi/SiOxNy/Si using radical oxynitridation technique,
Electronic Materials Conf. (EMC) 2011,
DD-9,
p. 96,
June 2011.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Evaluation and control of break-even time for nonvolatile SRAM using pseudo-spin-MOSFETs wit spin-transfer-torque MTJs,
IEEE International Magnetics Conference 2011 (INTERMAG),
Apr. 2011.
-
S. Yamamoto,
Y. Shuto,
S. Sugahara.
Power-gating ability and power aware design of nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs,
IEEE International Magnetics Conference 2011 (INTERMAG),
Apr. 2011.
-
S. Yamamoto,
Y. Shuto,
S. Sugahara.
Application of NV-DFF and NV-SRAM using spin-transistor Architecture with spin transfer torque MTJs to nonvolatile power-gating FPGA,
IEEE International Magnetics Conference 2011 (INTERMAG),
Apr. 2011.
-
Y. Takamura,
T. Sakurai,
R. Nakane,
Y. Shuto,
S. Sugahara.
Comparative study of full-Heusler Co2FeSi and Co2FeGe alloy thin films formed by rapid thermal annealing,
55th Annual Conference on Magnetism and Magnetic Materials (MMM2010),
paper CV-02,
p. 114 (program),
Nov. 2010.
-
Y. Shuto,
Y. Takamura,
S. Sugahara.
Numerical simulation analysis of nonlocal multi-terminal devices for spin current detection in semiconductors,
55th Annual Conf. on Magnetism and Magnetic Materials,
paper DD-04,
p. 124,
Nov. 2010.
-
Y. Shuto,
R. Nakane,
W. H. Wang,
H. Sukegawa,
S. Yamamoto,
M. Tanaka,
K. Inomata,
S. Sugahara.
A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET,
The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors,
Aug. 2010.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs,
The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors,
Aug. 2010.
-
Y. Takamura,
R. Nakane,
S. Sugahara.
Disordered structures in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing,
The 6th International Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI),
paper P2-21,
Aug. 2010.
-
T. Sakurai,
Y. Takamura,
R. Nakane,
Y. Shuto,
S. Sugahara.
Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films by rapid thermal annealing,
The 6th International Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI),
paper P2-22,
Aug. 2010.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs,
11th Joint MMM-Intermag Conference,
Jan. 2010.
-
Y. Takamura,
S. Sugahara.
X-ray diffraction study for atomic disorder in full-Heulser alloy thin films using Co x-ray source,
11th MMM-Intermag Conf.,
Jan. 2010.
-
S Yamamoto,
Satoshi Sugahara.
Nonvolatile delay flip-flop using pseudo-spin-MOSFETs and its power-gating applications,
the 11th Joint MMM/Intermag Conf.,
Jan. 2010.
-
Y. Shuto,
R. Nakane,
H. Sukegawa,
S. Yamamoto,
M. Tanaka,
K. Inomata,
S. Sugahara.
Fabrication and characterization of pseudo-spin-MOSFETs,
Intl. Conf. Silicon Nano Devices in 2030,
paper P-49,
pp. 148-149,
Oct. 2009.
-
S. Yamamoto,
Yusuke Shuto,
Satoshi Sugahara.
Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop,
International Symposium on Silicon Nano Devices in 2030,
P-50,
Oct. 2009.
-
Y. Takamura,
S. Sugahara.
Half-metallic ferromagnet technologies for spin-functional MOSFETs,
Intl. Conf. “Silicon Nano Devices in 2030: Prospects by world’s leading scientists,
paper P-48,
Oct. 2009.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Analysis and design of nonvolatile SRAM using spintronics technology,
Non-volatile Memory Technology Symposium 2009 (NVMTS09),
paper P7,
Oct. 2009.
-
Shuu’ichirou.Yamamoto,
Yusuke Shuto,
Satoshi Sugahara.
Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices,
Proceedings of IEEE 2009 Custom Integrated Circuits Conference (CICC),
pp. 531-534,
Sept. 2009.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors,
Intermag 2009,
paper CT-02,
p. 195,
May 2009.
-
Shuu’ichirou Yamamoto,
Satoshi Sugahara.
Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture,
IEEE International Magnetics Conference,
ET-01,
May 2009.
-
K. Hayashi,
Y. Takamura,
R. Nakane,
S. Sugahara.
Preparation and characterization of full-Heusler Co2FeSi alloy thin films on amorphous insulator films,
IEEE International Magnetics Conference (INTERMAG 09),
paper ES-08,
May 2009.
-
SATOSHI SUGAHARA.
スピン機能MOSFETによる新しいエレクトロニクスの展開,
応用物理学会シリコンテクノロジー分科会第111回研究集会,
paper 6,
Mar. 2009.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices,
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials,
pp. 810-811,
2009.
-
S. Yamamoto,
S. Sugahara.
Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology,
53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008),
paper CT-04,
p. 196,
Nov. 2008.
-
Y. Takamura,
R. Nakane,
S. Sugahara.
Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing,
53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008),
DD-03,
pp. 230-231,
Nov. 2008.
-
Y. Shuto,
S. Yamamoto,
S. Sugahara.
Novel nonvolatile SRAM architecture using MOSFET-based spin-transistors,
53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008),
paper CT-02,
p. 195,
Nov. 2008.
-
Y. Takamura,
Y. Nagahama,
A. Nishijima,
R. Nakane,
S. Sugahara.
Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors,
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008),
session E15-E23,
paper 2480,
Oct. 2008.
-
Y. Shuto,
M. Tanaka,
S. Sugahara.
Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics,
Hawaii, USA,
Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME2008),
session E15-E23,
peper 2481,
Oct. 2008.
-
Y. Gyoda,
J. Hayafuji,
M. Yarimizu,
W. Terui,
S. Sugahara,
H. Munekata.
Spin transport across indirect gap barriers in GaAs-AlGaAs heterostructures,
The 2008 Intern’l Conf. on Solid State Devices and Materials,
Sept. 2008.
-
H. Munekata,
J. Hayafuji,
Y. Gyoda,
M. Yarimizu,
W. Terui,
S. Sugahara.
Spin transport across depletion region and energy barriers in GaAs-AlGaAs heterostructures,
5th Intern’l Conf. on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-V),
Aug. 2008.
-
Y. Takamura,
A. Nishijima,
Y. Nagahama,
R. Nakane,
S. Sugahara.
Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs,
The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4),
The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4),
paper P-19,
Apr. 2008.
-
Y. Shuto,
M. Tanaka,
S. Sugahara.
Epitaxial growth and characterization of Germanium-based ferromagnetic semiconductor thin films for silicon spintronics,
The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4),
The forth Intl. Nanotechnology Conf. on Communication and Cooperation (INC4),
p. paper P-18,
Apr. 2008.
-
S. Dissanayake,
S. Tanabe,
S. Sugahara,
M. Takenaka,
S. Takagi.
Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method,
The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V),
The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V),
pp. 233-234, paper OB3-3,
Nov. 2007.
-
S. Takagi,
H. Matsubara,
M. Nishikawa,
T. Sasada,
R. Nakane,
S. Sugahara,
M. Takenaka.
Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation,
The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V),
The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V),
pp. 65-66, paper OA2-1,
Nov. 2007.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Crystallographic and magnetic properties of epitaxially grown Ge1-xFex thin films on Si(001) substrates,
52nd Annual Conf. on Magnetism and Magnetic Materials (MMM2007),
52nd Annual Conf. on Magnetism and Magnetic Materials (MMM2007),
p. 168 paper CG-12,
Nov. 2007.
-
Y. Takamura,
R. Nakane,
H. Munekata,
S. Sugahara.
Preparation of full-Heusler alloys on silicon-on-insulator substrates employing rapid thermal annealing,
52nd Annual Conference on Magnetism and Magnetic Materials (MMM2007),
p. 116 paper BQ-05,
Nov. 2007.
-
S. Yamamoto,
S. Sugahara.
Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology,
52nd Annual Conf. on Magnetism and Magnetic Materials,
52nd Annual Conf. on Magnetism and Magnetic Materials,
p. 481 paper HP-02,
Nov. 2007.
-
S. Takagi,
T. Uehara,
S. Tanabe,
H. Matsubara,
R. Nakane,
M. Takenaka,
S. Sugahara.
Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs,
4th International Symposium on Compound Semiconductors (ISCS2007),
34th International Symposium on Compound Semiconductors (ISCS2007),
p. 132,
Oct. 2007.
-
H. Nose,
S. Sugahara,
H.Munekata.
Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures,
Narrow Gap Semiconductors 2007,
Narrow Gap Semiconductors 2007,
p. 23-26,
July 2007.
-
S.Yada,
M.Tanaka,
S.Sugahara.
Structural and Magnetic Properties of Self-Organized Ge1-xMnx Nanocolumns in Epitaxially Grown Mn-Doped Ge Thin Films,
4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV), Maui, Hawaii, USA,,
4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV),
pp. 114-115 paper P-44,
June 2007.
-
S.Takagi,
T.Maeda,
N.Taoka,
M.Nishizawa,
Y.Morita,
K.Ikeda,
Y.Yamashita,
M.Nishikawa,
H.Kumagai,
R.Nakane,
S.Sugahara,
N.Sugiyama.
Gate Dielectric Formation and MIS Interface Characterization on Ge,
The 15th Biennial Conf. on Insulatring Films on Semiconductors (INFOS2007), Athene, Greece,,
The 15th Biennial Conf. on Insulatring Films on Semiconductors (INFOS2007),
pp. 2314-2319,
June 2007.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Magneto-Optical and Magneto-Transport Properties of Ferromagnetic Ge1-xFex Thin Films Grown on Si (001) Substrates,
4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV), Maui, Hawaii, USA,,
4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV),
pp. 101-102 paper P-33,
June 2007.
-
S.Dissanayake,
H.Kumagai,
T.Uehara,
Y.Shuto,
S.Sugahara,
S.Takagi.
(110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method,
The 5th International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI-5), Marseille, France,,
The 5th International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI-5),
pp. 57-58 paper S6-O17,
May 2007.
-
S.Sugahara.
Perspective on Spin-Transistor Electronics,
The 2007 International Meeting for Future of Electron Devices Kansai, Osaka, Japan,,
The 2007 International Meeting for Future of Electron Devices Kansai,
p. K-3, Invited paper,
Apr. 2007.
-
S.Sugahara.
Perspective on Si-Based Spin-Transistor Electronics,
3rd Intl. Nanotechnology Conf. on Communication and Cooperation (INC3), Brussels, Belgium,,
3rd Intl. Nanotechnology Conf. on Communication and Cooperation (INC3),
p. Invited paper,
Apr. 2007.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Epitaxial Growth and Properties of Ferromagnetic Ge1-xFex Thin Films on Si (001),
10th Joint MMM/Intermag Conference, Baltimore, USA,,
10th Joint MMM/Intermag Conference,
p. 406 paper FT-14,
Jan. 2007.
-
S.Yada,
M.Tanaka,
S.Sugahara.
Kinetically-Controlled Epitaxial Growth of Ferromagnetic Ge1-xMnx Thin Films,
10th Joint MMM/Intermag Conference, Baltimore, USA,,
10th Joint MMM/Intermag Conference,
p. 72 paper AU-10,
Jan. 2007.
-
M.Shichijo,
R.Nakane,
S.Sugahara,
S.Takagi.
Fabrication of III-V-O-I(III-V on Insulator) Structures on Si Using Micro-Channel Epitaxy with a Two-Step Growth Technique,
2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,,
2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006),
pp. 1088-1089 paper I-8-1,
Sept. 2006.
-
Pham Nam Hai,
Satoshi Sugahara,
Masaaki Tanaka.
Reconfigurable logic gates based on single electron spin transistors,
The third international school and conference on spintronics and quantum information technology (Spintech III),
Aug. 2005.
-
A. M. Nazmul,
T. Amemiya,
S. Sugahara,
M. Tanaka.
External Control of Ferromagnetism in Mn delta-doped GaAs-based Heterostructures,
9th Joint MMM-Intermag Conference (MMM-2004),
2004.
-
A. M. Nazmul,
T. Amemiya,
Y. Shuto,
S. Sugahara,
M. Tanaka.
Mn delta-doped GaAs/p-AlGaAs Heterostructures with High Curie Temperature and Its Control,
The 13th International Conference on Molecular Beam Epitaxy (MBE-2004),
2004.
Domestic Conference (Reviewed)
-
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
強磁性トンネル接合を用いた不揮発性SRAMの待機時電力削減能力,
第78回応用物理学会秋季学術講演会,
Mar. 2017.
-
Yuichi Gyoda,
Junji Hayafuji,
Masashi Yarimizu,
Wataru Terui,
SATOSHI SUGAHARA,
Hiro MUNEKATA.
間接遷移型の障壁層を含むAlGaAs-GaAsヘテロ構造におけるスピン輸送,
2008年春季第55回応用物理学関係連合講演会,
Vol. 第2分冊,
p. 803,
Apr. 2008.
-
SATOSHI SUGAHARA.
シリコン・スピンエレクトロニクス -材料・デバイス・回路-,
第10回シリサイド系半導体研究会夏の学校, 掛川,,
応用物理学会シリサイド系半導体と関連物質研究会,
p. 12, Invited paper,
July 2007.
-
Hoshii Takuya,
SATOSHI SUGAHARA,
Takagi Shin-ichi.
Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials),
Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers,
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics,
Vol. 46,
No. 4,
pp. 2122-2126,
Apr. 2007.
-
星井拓也,
出浦桃子,
七条真人,
杉山正和,
SATOSHI SUGAHARA,
中野義昭,
高木信一.
Si基板上へのInGaAsの成長におけるInPバッファーの有効性,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 30p-Q-4,
Mar. 2007.
-
出浦桃子,
杉山正和,
星井拓也,
SATOSHI SUGAHARA,
高木信一,
中野義昭.
Si上高品質III/V族化合物半導体薄膜形成に向けたMOVPEバッファ層の初期成長過程観察,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 30p-Q-3,
Mar. 2007.
-
Sanjeewa Dissanayake,
熊谷寛,
周藤悠介,
SATOSHI SUGAHARA,
高木信一.
酸化濃縮法により作製された超薄膜(110)面GOI p-MOSFET,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 27a-SC-2,
Mar. 2007.
-
上原貴志,
SATOSHI SUGAHARA,
松原寛,
中根了昌,
SATOSHI SUGAHARA,
高木信一.
原子状水素アニールによるSi/Ge/SOI構造メタルS/D pMOSFETの特性改善,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 28a-ZQ-9,
Mar. 2007.
-
松原寛,
熊谷寛,
SATOSHI SUGAHARA,
高木信一.
低温コンダクタンス法によるSiO2/Ge MIS界面準位の特性評価,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 30a-ZH-11,
Mar. 2007.
-
SATOSHI SUGAHARA,
上原貴志,
中根了昌,
SATOSHI SUGAHARA,
高木信一.
GOI(Ge-On-Insulater)MOSチャネル中の正孔の速度-電界特性,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 27a-SC-10,
Mar. 2007.
-
高木信一,
杉山正和,
SATOSHI SUGAHARA.
III-V族化合物半導体n-MOSFETとSi・Ge n-MOSFETの電流駆動力の比較,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 27a-SC-11,
Mar. 2007.
-
中根了昌,
杉浦邦晃,
田中雅明,
SATOSHI SUGAHARA.
シリコン中へのスピン注入とデバイス応用,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 29p-ZT-5, Invited paper,
Mar. 2007.
-
周藤悠介,
田中雅明,
SATOSHI SUGAHARA.
Si(001)基板上への強磁性半導体Ge1-xFex薄膜のMBE成長と評価,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 27p-ZT-6,
Mar. 2007.
-
矢田慎介,
田中雅明,
SATOSHI SUGAHARA.
エピタキシャル成長した強磁性Ge1-xMnx薄膜の構造と磁性の評価,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 27p-ZT-5,
Mar. 2007.
-
熊谷寛,
七条真人,
松原寛,
SATOSHI SUGAHARA,
内田恭敬,
高木信一.
Ge上極薄Siのプラズマ酸化によるSiO2/Ge MISキャパシタの電気特性,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 30a-ZH-9,
Mar. 2007.
-
西川昌志,
熊谷寛,
SATOSHI SUGAHARA,
高木信一.
オゾン酸化及び熱酸化により作製されたGe酸化膜/Ge MOS構造の電気特性,
第54回応用物理学関係連合講演会, 相模原,,
第54回応用物理学関係連合講演会,
p. 30a-ZH-10,
Mar. 2007.
International Conference (Not reviewed / Unknown)
-
Yota Takamura,
Yusuke Shuto,
Shu'uichiro Yamamoto,
Hiroshi Funakubo,
Minoru Kurosawa,
Shigeki Nakagawa,
Satoshi Sugahara.
nverse-Magnetostriction-Induced Switching Current Reduction Technique for Spin-Transfer Torque MTJs and Its Low-Power MRAM Applications,
2016 MRS Fall Meeting & Exhibit,
Nov. 2016.
-
S. Sugahara,
Y. Shuto,
S. Yamamoto.
Energy-efficient nonvolatile logic systems based on CMOS/spintronics hybrid technology,
the 222nd Meeting of the Electrochemical Society / the 2012 Pacific Rim Meeting on Electrochemical and Solid-Sate Science (PRIME),
Oct. 2012.
-
Y. Shuto,
Y. Takamura,
S. Sugahara.
Spin-functional MOSFETs based on half-metallic ferromagnet technology,
Workshop on Heusler Alloys and Their Spintronics Applications,
Jan. 2011.
-
SATOSHI SUGAHARA.
Spin-functional MOSFETs: CMOS/spintronics hybrid technology,
The 6th Intl. Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors,
pp. 173-173,
Aug. 2010.
-
S. Sugahara.
Spin-functional MOSFETs,
Intl. Symp. Silicon Nanodevices in 2030: Prospects by world's leading scientists,
Oct. 2009.
-
SATOSHI SUGAHARA.
Nonvolatile Logic Technologies for Green IT,
The 2009 International Meeting for Future of Electron Devices Kansai (IMFEDK),
May 2009.
-
S. Sugahara,
Y. Takamura.
SOI-Based Spin-Transistor Technologies,
215th ECS Meeting,
949,
May 2009.
Official location
-
S.Sugahara.
Spin-Transistor Electronics with Spin-MOSFETs,
The 32nd Annual Conference on Magnetics in Japan,
paper 12pB-7,
p. 44,
Sept. 2008.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Structural and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Grown by LT-MBE,
4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,,
pp. paper C-3, p.82,
2006.
-
S.Yada,
M.Tanaka,
S.Sugahara.
Ferromagnetism in Mn-Doped Amorphous Ge Thin Films,
4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,,
pp. paper PB-36, p.119,
2006.
-
S.Sugahara.
Spin MOSFETs As a Basis for Silicon-Based Spin-Electronics,
4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,,
pp. paper R-4, p.153, Invited paper,
2006.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Ferromagnetism in Epitaxially Grown Fe-Doped Ge Thin Films on Ge(001) Substrates,
17th Intl. Conf. on Magnetism (ICM-2006), Kyoto, Japan,,
pp. paper FrA2-D-3, p.119,
2006.
-
H.Kumagai,
M.Shichijo,
H.Ishikawa,
T.Hoshii,
S.Sugahara,
Y.Uchida,
S.Takagi.
Fabrication of SiO2/Ge MIS Structures by Plasma Oxidation of Ultrathin Si Films Grown on Ge,
2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,,
pp. paper J-6-23, pp. 398-399,
2006.
-
T.Hoshii,
S.Sugahara,
S.Takagi.
Effect of Tensile Strain on Gate and Substrate Currents of Strained-Si n-MOSFETs,
2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,,
pp. paper H-1-3, pp. p164-165,
2006.
-
T.Uehara,
H.Matsubara,
S.Sugahara,
S.Takagi.
Ultra-Thin Ge-on-Insulator(GOI) Metal S/D p-Channel MOSFETs Fabricated by Low Temperature MBE Growth,
2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,,
pp. paper H-8-2, pp.1050-1051,
2006.
-
S.Takagi,
S.Sugahara.
Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs,
2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,,
pp. paper H-9-1, pp.1056-1057,
2006.
-
R.Nakane,
M.Tanaka,
S.Sugahara.
Preparation of Ferromagnetic Silicide Fe1-xSix Using Silicon-on-Insulator Substrates for Si-Based Spin-Electronic Devices,
50th Annual Conf. on Magnetism and magnetic materials (MMM2005), San Jose, USA,,
pp. paper DS-01, p.198,
2005.
-
Y.Shuto,
M.Tanaka,
S.Sugahara.
Epitaxial Growth and Magnetic Properties of a New Group IV Ferromagnetic Semiconductor Ge1-xFex,
50th Annual Conf. on Magnetism and magnetic materials (MMM2005), San Jose, USA,,
pp. paper BG-04, p.64,
2005.
-
S.Sugahara.
MOSFET Type of Spin Transistor As a Beyond-CMOS Device Using Spin Degrees of Freedom,
2005 Intl Conf. on Solid State Devices and Materials (SSDM2005), Kobe, Japan,Rump session: Beyond the Scaling Limit-Innovative Devices and Materials-,,
pp. Invited paper,
2005.
-
S.Takagi,
K.Takeda,
S.Sugahara,
T.Numata.
Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs,
2005 Intl. Conf. on Solid State Devices and Materials (SSDM2005), Kobe, Japan,,
pp. paper B-2-1, pp.38-39,
2005.
-
S.Yada,
K. L.Lee,
M.Tanaka,
S.Sugahara.
Ferromagnetism in Epitaxially Grown Ge1-xMnx Thin Films on Ge(001) substrates,
The 3rd Intl. School and Conf. on Spintronics and Quantum Information Technology (Spintech III), Awaji Island, Japan,,
pp. paper P-31, p.91,
2005.
-
R.Nakane,
J.Kondo,
S.Sugahara,
M.Tanaka.
Current-Induced Magnetization Switching in Epitaxial MnAs/NiAs/MnAs Heterostructures on GaAs Substrates,
The 3rd Intl. School and Conf. on Spintronics and Quantum Information Technology (Spintech III), Awaji Island, Japan,,
pp. paper P-53, p.113,
2005.
-
S.Sugahara.
Spin MOSFETs As a Basis for Integrated Spin Electronics,
5th IEEE conf. on Nanotechnology (IEEE-NANO 2005), Nagoya, Japan,,
pp. paper TU-P5-1, p.24, Invited paper,
2005.
-
R.Nakane,
M.Tanaka,
S.Sugahara.
Formation and Characterization of Ferromagnetic Silicide Fe1-xSix for Si-Based Spintronic Devices,
47th Annual TMS Electronic Materials Conf. (EMC), Santa Barbara, USA,,
pp. paper J10,
2005.
-
S.Sugahara,
M.Tanaka.
Spin MOSFETs using ferromagnetic Schottky barrier contacts for the source and drain,
63rd Device Research Conf. (DRC), Santa Barbara, USA,,
pp. paper V.C-2, pp.211-212,
2005.
-
S.Sugahara.
Spin MOSFETs for Integrated Spin-Electronics,
6th Intl Workshop on Future Information Processing Technologies (IWFIPT), Asheville, USA,,
pp. Invited paper,
2005.
Domestic Conference (Not reviewed / Unknown)
-
Katsutoshi Ito,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
新型超低電圧リテンションSRAM (ULVR-SRAM)セルの提案,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
Taketo Kato,
Yusaku Shiotsu,
SATOSHI SUGAHARA,
Shuichiro Yamamoto.
ニアスレッショルド電圧駆動ULVR-SRAMのパワーゲーティング性能,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
Osamu Yamazaki,
Yusaku Shiotsu,
SATOSHI SUGAHARA,
Shuichiro Yamamoto.
FinFETを用いた低電圧駆動不揮発性SRAM (NV-SRAM)の設計,
Sept. 2022.
-
Yusaku Shiotsu,
Takumi Hara,
SATOSHI SUGAHARA.
超低電圧リテンションSRAMのエネルギー最小点動作とそのBNNアクセラレータへの応用,
電子情報通信学会集積回路研究会,
Apr. 2022.
-
Yusaku Shiotsu,
SATOSHI SUGAHARA.
ULVR-SRAMを用いたニューラルネットワークアクセラレータの性能,
第69回応用物理学会春季学術講演会,
Mar. 2022.
-
Hiroki Yano,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
超低電圧リテンションSRAMのパワーゲーティング性能とアーキテクチャ,
第69回応用物理学会春季学術講演会,
Mar. 2022.
-
Kaito Sanuki,
Hiroyuki Endou,
Yusaku Shiotsu,
SATOSHI SUGAHARA.
各種層間絶縁材料を用いたトランスバース型薄膜µTEGの高精度集中定数回路モデル,
第69回応用物理学会春季学術講演会,
Mar. 2022.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
不揮発性SRAM:エッジコンピューティングの革新的低消費電力技術,
Oct. 2021.
-
Hiroyuki Endou,
Yusaku Shiotsu,
SATOSHI SUGAHARA.
薄膜トランスバース型マイクロTEG モジュールの簡略化集中定数回路モデル,
第82回応用物理学会秋季学術講演会,
Sept. 2021.
-
Takumi Hara,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ニアスレッショルド電圧動作ULVR-SRAMマクロの設計と解析,
第82回応用物理学会秋季学術講演会,
Sept. 2021.
-
Shuhei Saito,
Yusaku Shiotsu,
Takumi Hara,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ボディバイアス制御ULVR-SRAMの設計と解析,
第82回応用物理学会秋季学術講演会,
Sept. 2021.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ULVR-SRAMを用いたBNNアクセラレータの提案と性能予測,
第82回応用物理学会秋季学術講演会,
Sept. 2021.
-
Tsubasa Matsuzaki,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
バルクデバイスを用いた超低電圧リテンションFlip-Flopの設計と解析,
第82回応用物理学会秋季学術講演会,
Sept. 2021.
-
SATOSHI SUGAHARA.
体温を用いた熱電発電モジュールの設計技術,
第26回日本熱電学会研究会「熱電デバイス実現のための実装技術開発の最前線」,
July 2021.
-
Takumi Hara,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ニアスレッショルド電圧動作超低電圧リテンションSRAMの設計と性能解析,
LSIとシステムのワークショップ2021,
May 2021.
-
Yusaku Shiotsu,
Hayato Yoshida,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ボディバイアス効果を用いたULVR-SRAMセルの設計とそのパワーゲーティング性能,
LSIとシステムのワークショップ2021,
May 2021.
-
H. Hiroki,
Y. Takamura,
E. Matsushita,
S. Sugahara,
S. Nakagawa.
Rapid thermal annealingによる合金化を用いた熱電フルホイスラー合金Fe2TiAl薄膜の形成と評価,
The 68th JSAP Spring Meeting 2021,
vol. 2021.1,
p. 1631,
Mar. 2021.
Official location
-
Hiroyuki Endou,
Yusaku Shiotsu,
Hayato Kumagai,
SATOSHI SUGAHARA.
薄膜トランスバース型マイクロTEGモジュールの高精度モデリング,
第68回応用物理学会春季学術講演会,
Mar. 2021.
-
Hayato Kumagai,
Yusaku Shiotsu,
Hiroyuki Endou,
SATOSHI SUGAHARA.
シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールのモデリング,
第68回応用物理学会春季学術講演会,
Mar. 2021.
-
Kenichiro Takiguchi,
Yusaku Shiotsu,
Tsubasa Matsuzaki,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
超低電圧リテンションフリップフロップ(ULVR-FF)のエネルギー極小点動作,
第68回応用物理学会春季学術講演会,
Mar. 2021.
-
Hayato Yoshida,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ULVR-SRAMを用いたキャッシュのパワーゲーティング性能,
第68回応用物理学会春季学術講演会,
Mar. 2021.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
超低電圧リテンションSRAM (ULVR-SRAM)のエネルギー極小点動作,
第68回応用物理学会春季学術講演会,
Mar. 2021.
-
Takumi Hara,
Hayato Yoshida,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ニアスレッショルド電圧動作ULVR-SRAMセルの設計,
第68回応用物理学会春季学術講演会,
Mar. 2021.
-
Hayato Yoshida,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
各種リテンションSRAMのパワーゲーティングにおける電力削減効率に関する電源遮断可能時間分布の影響,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
Hayato Kumagai,
Yusaku Shiotsu,
Hiroyuki Endou,
SATOSHI SUGAHARA.
シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールの高出力設計,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
Daiki Kitagata,
Hayato Yoshida,
Yusaku Shiotsu,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
新型超低電圧リテンションSRAMセルの設計と解析,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
Kenichiro Takiguchi,
Daiki Kitagata,
Tsubasa Matsuzaki,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
新型超低電圧リテンションFFの提案,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
Yusaku Shiotsu,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
新型超低電圧リテンションSRAMマクロの設計と解析,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
Hayato Yoshida,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
新型擬似不揮発性SRAMセルの提案,
Mar. 2020.
-
Takumi Hara,
Hayato Yoshida,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
ニアスレッショルド電圧動作擬似不揮発SRAMセルの設計と解析,
Mar. 2020.
-
Hayato Kumagai,
Yusaku Shiotsu,
Hiroyuki Endou,
SATOSHI SUGAHARA.
“シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールの完全最適設計とその性能,
Mar. 2020.
-
Yusaku Shiotsu,
Hiroyuki Endou,
Hayato Kumagai,
SATOSHI SUGAHARA.
ホイスラー合金を用いた薄膜トランスバース型マイクロTEGモジュールの最適設計,
Mar. 2020.
-
Hayato Yoshida,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
不揮発/擬似不揮発記憶を用いたSRAMのパワーゲーティング性能,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
Kenichiro Takiguchi,
Daiki Kitagata,
Tsubasa Matsuzaki,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
不揮発/擬似不揮発性FFを用いたパワーゲーティングの性能評価,
Sept. 2019.
-
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
NV-SRAMを用いたUseless dataの積極的破棄による不揮発性パワーゲーティング,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
HIROSHI FUNAKUBO,
Minoru Kuribayashi Kurosawa,
SATOSHI SUGAHARA.
新構造ピエゾエレクトロニックトランジスタを用いたFFの設計と性能,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
Hayato Kumagai,
Yusaku Shiotsu,
Hiroyuki Endou,
SATOSHI SUGAHARA.
シリコンナノワイヤを用いたトランスバース型マイクロTEGモジュールの最適設計,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
Takumi Hara,
Hayato Yoshida,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
各種リテンション技術を用いたSRAMのパワーゲーティング性能,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
Hiroyuki Endou,
Hayato Kumagai,
Yusaku Shiotsu,
SATOSHI SUGAHARA.
薄膜トランスバース型μTEGモジュールの最適構造における層間絶縁材料の影響”,第80回応用物理学会秋季学術講演会,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
HIROSHI FUNAKUBO,
Minoru Kuribayashi Kurosawa,
SATOSHI SUGAHARA.
新構造ピエゾエレクトロニックトランジスタの低リーク設計とそのSRAMへの応用,
第66回応用物理学会春季学術講演会,
Mar. 2019.
-
Yusaku Shiotsu,
Takashi Okubo,
SATOSHI SUGAHARA.
薄膜π型マイクロTEGモジュールの最適設計における熱電材料膜厚の影響,
第66回応用物理学会春季学術講演会,
Mar. 2019.
-
Daiki Kitagata,
Tsubasa Matsuzaki,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
擬似不揮発性FFの速度性能優先設計とその回路性能,
第66回応用物理学会春季学術講演会,
Mar. 2019.
-
Daiki Kitagata,
Tsubasa Matsuzaki,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
擬似不揮発性FFの速度性能優先設計とその回路性能,
第66回応用物理学会春季学術講演会,
Mar. 2019.
-
Hayato Yoshida,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
デュアルパワースイッチを用いた擬似不揮発性SRAMの設計と解析,
第66回応用物理学会春季学術講演会,
Mar. 2019.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
HIROSHI FUNAKUBO,
Minoru Kuribayashi Kurosawa,
SATOSHI SUGAHARA.
Design methodology of a new piezoelectronic transistor,
The 79th JSAP Autumn Meeting,
21a-CE-8,
Sept. 2018.
-
Hayato Kumagai,
Yusaku Shiotsu,
Takashi Okubo,
Satoshi Sugahara.
Design optimization of π-type thin-film micro-TEG modules using various interlayer insulators,
The 79th JSAP Autumn Meeting,
21p-438-3,
Sept. 2018.
-
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
デュアルモードインバータを用いた疑似不揮発性FFの設計と解析,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
Hayato Yoshida,
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
デュアルモードインバータを用いた疑似不揮発性SRAMの設計と解析,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
Toshimasa Seino,
Suzune Yamashita,
Nana Chiwaki,
SATOSHI SUGAHARA.
真空/絶縁体ハイブリッドアイソレーションを用いた薄膜π型μTEGの設計と性能,
第65回応用物理学会春季学術講演会,
Mar. 2018.
-
Daiki Kitagata,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
階層型ストアフリー電源遮断を用いた不揮発性SRAMのエネルギー性能,
第65回応用物理学会春季学術講演会,
Mar. 2018.
-
Takashi Okubo,
Nana Chiwaki,
Toshimasa Seino,
Suzune Yamashita,
SATOSHI SUGAHARA.
真空/絶縁体ハイブリッドアイソレーションを用いた薄膜トランスバース型μTEGの設計と性能,
第65回応用物理学会春季学術講演会,
Mar. 2018.
-
Yusaku Shiotsu,
Shuichiro Yamamoto,
Yusuke Shuto,
Hiroshi Funakubo,
Minoru Kuribayashi Kurosawa,
Satoshi Sugahara.
Design of a new piezoelectronic transistor and its device and circuit performances,
The 65th JSAP Spring Meeting,
18p-G203-7,
Mar. 2018.
-
Y. Takamura,
S. Yamamoto,
H. Funakubo,
M.K. Kurosawa,
S. Nakagawa,
S. Sugahara.
Piezoelectronic magnetoresistive-device and its low-voltage MRAM application,
The 65th JSAP Spring Meeting,
18p-G203-8,
Mar. 2018.
-
Suzune Yamashita,
Toshimasa Seino,
Nana Chiwaki,
SATOSHI SUGAHARA.
真空アイソレーションを用いた薄膜π型ナノ熱電発電モジュールの性能限界,
第78回応用物理学会秋季学術講演会,
Sept. 2017.
-
Toshimasa Seino,
Suzune Yamashita,
Nana Chiwaki,
SATOSHI SUGAHARA.
薄膜π型ナノ熱電発電モジュールの設計と性能,
第78回応用物理学会秋季学術講演会,
Sept. 2017.
-
Nana Chiwaki,
Toshimasa Seino,
Suzune Yamashita,
SATOSHI SUGAHARA.
薄膜トランスバース型ナノTEGモジュールの設計と性能予測,
第78回応用物理学会秋季学術講演会,
Sept. 2017.
-
Daiki Kitagata,
Yusuke Shuto,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
Architectures and energy performance of nonvolatile SRAM for core-level nonvolatile power-gating,
Integrated Circuits and Devices,
IEICE technical report,
Vol. 117,
No. 9,
pp. 51-56,
Apr. 2017.
-
Daiki Kitagata,
Yusuke Shuto,
Shuichiro Yamamoto,
SATOSHI SUGAHARA.
不揮発性SRAMの設計とエネルギー性能の解析,
第64回応用物理学会春季学術講演会,
16a-412-7,
Mar. 2017.
-
Toshimasa Seino,
Taiju Akushichi,
SATOSHI SUGAHARA.
CoFe/HfO2/Siスピン注入源の作製と評価,
第64回応用物理学会春季学術講演会,
16a-501-11,
Mar. 2017.
-
Tsuyoshi Kondou,
Nana Chiwaki,
SATOSHI SUGAHARA.
薄膜熱電材料を用いた熱電発電モジュールの設計と性能,
第64回応用物理学会春季学術講演会,
15p-E206-2,
Mar. 2017.
-
Nana Chiwaki,
Tsuyoshi Kondou,
SATOSHI SUGAHARA.
薄膜トランスバース型マイクロ熱電発電モジュールの設計と性能予測,
第64回応用物理学会春季学術講演会,
15p-E206-3,
Mar. 2017.
-
Toshimasa Seino,
Taiju Akushichi,
SATOSHI SUGAHARA.
CoFe/Hf系酸化物/Siスピン注入源の作製と評価,
第21回スピン工学の基礎と応用 (PASPS-21),
P-12,
Dec. 2016.
-
Daiki Kitagata,
Taiju Akushichi,
SATOSHI SUGAHARA.
電界アシスト4端子非局所MOSデバイスの解析と設計,
第21回スピン工学の基礎と応用 (PASPS-21),
E-3,
Dec. 2016.
-
Tsuyoshi Kondou,
Nana Chiwaki,
SATOSHI SUGAHARA.
高密度集積化薄膜トランスバース型マイクロ熱電発電モジュールの設計,
第13回日本熱電学会学術講演会,
S2B-6,
Sept. 2016.
-
Y. Takamura,
S. Nakagawa,
S. Sugahara.
Inverse-magnetostriction-induced switching current reductionfor spin-transfer torque MTJs,
The 76th JSAP Autumn Meeting, 2015,
15a-3A-5,
Sept. 2015.
-
Yota Takamura,
Shigeki Nakagawa,
Satoshi Sugahara.
Inverse-magnetostriction-induced switching current reduction for spin-transfer torque MTJs,
The 39th Annual conference on magnetics in japan,
10pE-15,
Sept. 2015.
-
Yusuke Shuto,
Katsunori Takahashi,
Taiju Akushichi,
Yota Takamura,
SATOSHI SUGAHARA.
Fabrication and characterization of a CoFe/TiO2/Si spin injector,
Physics and Applications of Spin-related Phenomena in Semiconductors,
P-18,
Dec. 2014.
-
Taiju Akushichi,
Yota Takamura,
Yusuke Shuto,
SATOSHI SUGAHARA.
Spin injection into Si channels using high-quality CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts,
Physics and Applications of Spin-related Phenomena in Semiconductors,
O-5,
Dec. 2014.
-
Taiju Akushichi,
Yota Takamura,
Yusuke Shuto,
SATOSHI SUGAHARA.
スピン蓄積デバイスにおける Hanle 効果の解析,
Physics and Applications of Spin-related Phenomena in Semiconductors,
P-19,
Dec. 2014.
-
Yuu Kawame,
Taiju Akushichi,
Yota Takamura,
Yusuke Shuto,
SATOSHI SUGAHARA.
(100)配向したCo2FeSi0.5Al0.5/MgO/Siトンネル接合の作製とそのスピン注入源応用,
Physics and Applications of Spin-related Phenomena in Semiconductors,
P-20,
Dec. 2014.
-
Yota Takamura,
Taiju Akushichi,
Yusuke Shuto,
SATOSHI SUGAHARA.
Nonlocal spin devices using electrical-field-induced spin-transport acceleration,
Physics and Applications of Spin-related Phenomena in Semiconductors,
O-6,
Dec. 2014.
-
Taiju Akushichi,
Yota Takamura,
Yusuke Shuto,
SATOSHI SUGAHARA.
Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with the high-quality tunnel barriers prepared by radical-oxygen annealing,
the 38th Annual Conference on MAGNETICS in Japan,
4aD-2,
Sept. 2014.
-
Y. Takamura,
T. Akushichi,
Y. Shuto,
S. Sugahara.
Analysis of Hanle-effect signals observed in three-terminal spin-accumulation devices,
the 38th Annual Conference on MAGNETICS in Japan,
the 38th Annual Conference on MAGNETICS in Japan,
4aD-1,
Sept. 2014.
-
Katsunori Takahashi,
Taiju Akushichi,
Yusuke Shuto,
Yota Takamura,
SATOSHI SUGAHARA.
Fabrication of a CoFe/TiO2/Si tunnel contact and its application for spin injector,
the 38th Annual Conference on MAGNETICS in Japan,
4aD-4,
Sept. 2014.
-
Yuu Kawame,
Taiju Akushichi,
Yusuke Shuto,
Yota Takamura,
SATOSHI SUGAHARA.
Preparation and characterization of a B2-ordered Co2FeSi0.5Al0.5 /MgO/Si spin injector,
the 38th Annual Conference on MAGNETICS in Japan,
4aD-3,
Sept. 2014.
-
Y. Takamura,
A. Sadono,
T. Akushichi,
T. Okishio,
Y. Shuto,
S. Sugahara.
Analysis of Hanle-effect signals observed in a Si-channel spin accumulation device with a high-quality CoFe/MgO/Si spin injector,
The 61st JSAP Spring Meeting, 2014,
Mar. 2014.
-
Yota Takamura,
Shigeki Nakagawa,
Satoshi Sugahara.
Analysis techniques for ordered crystal structure of full-Heusler alloys using x-ray diffraction,
マグネティックス研究会,
The Papers of Technical Meeting on "Magnetics", IEE Japan,
The Institute of Electrical Engineers of Japan,
2013,
60,
pp. 15-20,
July 2013.
-
Yota Takamura,
Satoshi Sugahara.
Analysis of the Hanle effect in spin-MOSFETs (2),
第73回応用物理学会学術講演会,
11p-PA2-5,
Sept. 2012.
-
Shuu'ichirou Yamamoto,
Yusuke Shuto,
SATOSHI SUGAHARA.
擬似スピンMOSFET技術を用いたFPGAの不揮発性パワーゲーティング,
平成24年秋季 第73回応用物理学会学術講演会,
Sept. 2012.
-
SATOSHI SUGAHARA,
Yusuke Shuto,
Shuu'ichirou Yamamoto.
スピントロニクス/CMOS融合技術:スピントランジスタ・アーキテクチャ,
平成24年秋季 第73回応用物理学会学術講演会,
Sept. 2012.
-
Shuu'ichirou Yamamoto,
Yusuke Shuto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性DFF:BETにおける静的リーク電流の影響,
平成24年秋季 第73回応用物理学会学術講演会,
Sept. 2012.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAM:スリープモード動作とその応用,
平成24年秋季 第73回応用物理学会学術講演会,
Sept. 2012.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAMのスタティックノイズマージンとエネルギー性能の解析,
電子通信学会集積回路研究会(ICD)シリコン材料・デバイス研究会(SDM)共催研究会,
Aug. 2012.
-
菅原聡,
周藤悠介,
山本修一郎.
スピントロニクス/CMOS融合技術: スピン機能MOSFETとその低消費電力ロジック応用,
半導体・集積回路技術シンポジウム,
July 2012.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAM:スタティックノイズマージン評価,
第59回応用物理学関係連合講演会,
Mar. 2012.
-
SATOSHI SUGAHARA.
CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望,
電子情報技術産業協会平成23年度第5回省電力エレクトロニクス技術分科会,
Jan. 2012.
-
Takao Okishio,
Yota Takamura,
SATOSHI SUGAHARA.
CoFe/Mg/AlOx/Siデピン接合を用いた低バリア強磁性ソース/ドレインMOSFET,
第16回半導体スピン工学の基礎と応用(PASPS-16),
p. 75,
Nov. 2011.
-
Yota Takamura,
Kengo Hayashi,
Taijiro Kagei,
Yusuke Shuto,
SATOSHI SUGAHARA.
ラジカル酸窒化膜を用いたCFS/SiOxNy/Siトンネル接合の形成と構造評価,
第16回半導体スピン工学の基礎と応用(PASPS-16),
p. 41,
Nov. 2011.
-
SATOSHI SUGAHARA,
Yusuke Shuto,
Shuu'ichirou Yamamoto.
CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望,
電子情報通信学会技術研究報告「磁気記録・情報ストレージ」,
pp. 63-70,
Oct. 2011.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
抵抗変化素子を用いたばらつき補償CMOSゲート,
2010年春季 第57回応用物理学関係連合講演会,
Sept. 2011.
-
Yota Takamura,
Satoshi Sugahara.
Analysis of the Hanle effect in spin-MOSFETs,
The 72nd Fall Meeting, 2011,
2p-P-24,
Sept. 2011.
-
Yota Takamura,
Kengo Hayashi,
Yusuke Shuto,
Satoshi Sugahara.
Formation of Co2FeSi/SiOxNy/Si tunnel junctions using radical oxinitradation technique,
The 72nd Fall Meeting, 2011,
31p-ZS-12,
Sept. 2011.
Official location
-
SATOSHI SUGAHARA.
Spin-functional MOSFETs: Material, device, and circuit technologies,
29th Electronic Materials Symposium (EMS-29),
pp. 277-279,
Sept. 2011.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAM:スリープ時リーク電流削減効果,
第72回秋季応用物理学会学術講演会,
Aug. 2011.
-
Takao Okishio,
Yota Takamura,
SATOSHI SUGAHARA.
CoFe/Mg/AlOx/Siトンネル構造をソース/ドレインに用いたスピンMOSFETの作製,
第72回応用物理学会学術講演会,
1p-P10-25,
Aug. 2011.
-
SATOSHI SUGAHARA.
スピン機能MOSFET技術の展開,
日本学術振興会ナノプローブテクノロジー第167委員会第63回研究会,
pp. 18-24,
July 2011.
-
Kengo Hayashi,
Yota Takamura,
Yusuke Shuto,
SATOSHI SUGAHARA.
RTA法を用いたCo2FeSiの形成における初期多層膜構造の影響,
第58回応用物理学関係連合講演会,
25a-KM-10,
Mar. 2011.
Official location
-
SATOSHI SUGAHARA.
スピントランジスタ・エレクトロニクス -不揮発性ロジックに基づく低消費電力集積回路の基盤技術-,
2011年春季 第58回応用物理学関係連合講演会, シンポジウム:ナノエレクトロニクス研究の国際連携,
Mar. 2011.
-
Mitsuhiro Satou,
Yota Takamura,
SATOSHI SUGAHARA.
Characterization of full-Heusler Co2FeSi1-xAlx alloy thin films formed by RTA,
第58回応用物理学関係連合講演会,
25a-KM-11,
Mar. 2011.
Official location
-
SATOSHI SUGAHARA.
スピントランジスタ・エレクトロニクス -不揮発性ロジックに基づく低消費電力集積回路の基盤技術-,
2011年春季 第58回応用物理学関係連合講演会,
2011年春季 第58回応用物理学関係連合講演会,
paper 25a-KA-7,
Mar. 2011.
-
Shuu'ichirou Yamamoto,
Yusuke Shuto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAMと不揮発性DFFのFPGA応用,
2010年秋季 第71回応用物理学会学術講演会,
Sept. 2010.
-
Yusuke Shuto,
Yota Takamura,
SATOSHI SUGAHARA.
非局所配置マルチターミナルデバイスの数値解析シミュレーション,
第71回応用物理学会学術講演会,
paper 16a-A-10,
p.73,
10-044(DVD),
Sept. 2010.
Official location
-
Takuya Sakurai,
Yota Takamura,
Ryosyo Nakane,
Yusuke Shuto,
Satoshi Sugahara.
RTAによるフルホイスラー合金Co2FeGe薄膜のエピタキシャル形成,
第71回応用物理学会学術講演会,
paper 14p-F-7,
p.73,
10-018(DVD),
Sept. 2010.
Official location
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAM:ストア時の書き込み電流制御,
2010年秋季 第71回応用物理学会学術講演会,
Sept. 2010.
-
SATOSHI SUGAHARA.
スピン機能MOSFETとその集積エレクトロニクスへの応用,
日本物理学会2010年秋大会,
Paper 25pRP-9,
Sept. 2010.
-
SATOSHI SUGAHARA,
Yusuke Shuto,
Shuu'ichirou Yamamoto.
不揮発性メモリ素子を用いた不揮発性/ばらつき補償SRAM技術,
2010年秋季第71回応用物理学会学術講演会,
Sept. 2010.
-
Shuu'ichirou Yamamoto,
Yusuke Shuto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性DFF:静的リーク電流とBETの削減,
2010年秋季 第71回応用物理学会学術講演会,
Sept. 2010.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAM:セルリーク電流とBETの削減,
2010年秋季 第71回応用物理学会学術講演会,
Sept. 2010.
-
Mitsuhiro Satou,
Yota Takamura,
SATOSHI SUGAHARA.
RTAを用いたフルホイスラー合金Co2FeAlxSi1-xの形成と評価,
第57回応用物理学関係連合講演会,
17a-ZH-4,
Mar. 2010.
Official location
-
Yusuke Shuto,
Ryosyo Nakane,
Wenhong Wang,
介川裕章,
Shuu'ichirou Yamamoto,
Masaaki Tanaka,
猪俣浩一郎,
SATOSHI SUGAHARA.
擬似スピンMOSFETの作製と評価,
2010年春季 第57回応用物理学関係連合講演会,
Mar. 2010.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
抵抗変化素子を用いたばらつき補償CMOSゲート,
2010年春季 第57回応用物理学関係連合講演会,
Mar. 2010.
-
Kengo Hayashi,
Yota Takamura,
Ryosyo Nakane,
SATOSHI SUGAHARA.
Co2FeSi/SiOxNy/Siトンネル接合の形成とその構造評価,
第57回応用物理学関係連合講演会,
17a-ZH-5,
Mar. 2010.
Official location
-
SATOSHI SUGAHARA.
スピン機能MOSFETとその集積回路応用,
日本磁気学会第168回研究会第26回スピンエレクトロニクス専門研究会,
Nov. 2009.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA,
Hideo Maejima.
マイクロプロセッサにおけるエマージングメモリデバイスへの期待,
第70回応用物理学会学術講演会,
9p-TA-4,
0分冊,
p. 53,
Sept. 2009.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
Spin-RAM/ReRAM技術を用いた機能MOSFETとその不揮発性SRAM/フリップフロップへの応用,
平成21年秋季 第70回応用物理学会学術講演会,
paper 9p-TA-8,
Sept. 2009.
-
SATOSHI SUGAHARA.
エマージングメモリデバイスとCMOSの機能融合による新しいコンピュータアーキテクチャの基礎:イントロダクトリートーク,
平成21年秋季 第70回応用物理学会学術講演会,
paper 9p-TA-8,
Sept. 2009.
-
Sanjeewa Dissanayake,
富山健太郎,
Yusuke Shuto,
SATOSHI SUGAHARA,
竹中充,
高木信一.
超薄膜(110)面GOI p型MOSFETの電気的特性,
平成21年秋季 第70回応用物理学会学術講演会,
paper 11p-TH-3,
Sept. 2009.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性DFF:バルーンDFFとの比較,
第70回応用物理学会学術講演会,
10a-TA-6,
II分冊,
p. 790,
Sept. 2009.
-
Yusuke Shuto,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAM:電源遮断動作消費電力の評価,
平成21年秋季 第70回応用物理学会学術講演会,
paper 10a-TA-5,
Sept. 2009.
-
Y. Takamura,
S. Sugahara.
Proposal of a new evaluation method of degree of ordering in full-Heusler alloys using XRD with Co x-ray source,
第70回応用物理学会学術講演会,
paper 10p-ZE-3,
第2分冊,
p. 674,
Sept. 2009.
-
SATOSHI SUGAHARA.
スピントランジスタによる新しいエレクトロニクスの展開,
電子情報通信学会シリコン材料・デバイス研究会(SDM) テーマ:低電圧/低消費電力技術、新デバイス・回路とその応用,
July 2009.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
スピン注入磁化反転MTJを用いた不揮発性Dフリップフロップ,
第56回応用物理学関係連合講演会,
第56回応用物理学関係連合講演会予稿集,
Vol. 2,
p. 785 1p-TB-6,
Apr. 2009.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
ノンポーラ型抵抗変化素子のSPICEモデル,
第56回応用物理学関連連合講演会,
第56回応用物理学関連連合講演会予稿集,
paper 2a-P16-13,
Mar. 2009.
-
SATOSHI SUGAHARA,
周藤悠介,
Shuu'ichirou Yamamoto.
抵抗変化素子を用いたFunctional MOSFET/CMOS,
第56回応用物理学関連連合講演会,
paper 2a-P16-14,
Mar. 2009.
-
竹中充,
田辺聡,
S. Dissanayake,
SATOSHI SUGAHARA,
高木信一.
酸化濃縮法を用いたGe PDとGe-on-Insulator MOSFETの集積化の検討,
第56回応用物理学関連連合講演会,
paper 5p-ZN-1,
Mar. 2009.
-
Y. Takamura,
R. Nakane,
Y. Shuto,
S. Sugahara.
不純物偏析技術を用いたCo2FeSiソース/ドレインMOSFETの作製と評価,
第56回応用物理学関連連合講演会,
1p-TB-9,
Mar. 2009.
Official location
-
周藤悠介,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
Pseudo-spin-MOSFETを用いた不揮発性SRAM:情報ストア動作解析,
第56回応用物理学関連連合講演会,
paper 1p-TB-8,
Mar. 2009.
-
K. Hayashi,
Y. Takamura,
R. Nakane,
S. Sugahrara.
極薄絶縁膜上へのフルホイスラー合金Co2FeSiの形成とその評価,
第56回応用物理学関連連合講演会,
1a-Q-5,
Mar. 2009.
Official location
-
Shuu'ichirou Yamamoto,
周藤悠介,
SATOSHI SUGAHARA.
ノンポーラ型抵抗変化素子を用いた不揮発性SRAM,
第56回応用物理学関連連合講演会,
paper 2a-P16-15,
Mar. 2009.
-
Kengo Hayashi,
Yota Takamura,
Ryosyo Nakane,
SATOSHI SUGAHARA.
非晶質絶縁膜上へのフルホイスラー合金Co2FeSiの形成と評価,
第13回半導体スピン工学の基礎と応用 (PASPS-13),
B-3,
p. 9,
Jan. 2009.
Official location
-
周藤悠介,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
擬似スピンMOSFETを用いた不揮発性SRAMの提案と解析,
第13回半導体スピン工学の基礎と応用(PASPS-13),
paper E-4,
p. 42,
Jan. 2009.
-
SATOSHI SUGAHARA,
周藤悠介,
Shuu'ichirou Yamamoto.
スピン機能MOSFETを用いた不揮発性高機能・高性能ロジック,
応用物理学会応用電子物性分科会・スピントロニクス研究会例会,
応用電子物性分科会誌,
Vol. 14,
pp. 136-141,
Oct. 2008.
-
SATOSHI SUGAHARA,
周藤悠介,
Shuu'ichirou Yamamoto.
スピン機能MOSFETによるスピントランジスタ・エレクトロニクス,
応用物理学会応用電子物性分科会・スピントロニクス研究会共同主催研究会,
paper (5),
pp. 136-141,
Oct. 2008.
-
Sanjeewa Dissanayake,
周藤悠介,
SATOSHI SUGAHARA,
竹中充,
高木信一.
化濃縮法で作成された超薄膜(110)面GOIp-MOSFETの電気的特性,
第69回応用物理学会学術講演会,
paper 2a-E-6,
Sept. 2008.
-
Kengo Hayashi,
Yota Takamura,
Ryosyo Nakane,
SATOSHI SUGAHARA.
非晶質絶縁膜上に形成したフルホイスラー合金Co2FeSiの結晶構造評価,
第69回応用物理学会学術講演会,
pp. 2a-ZR-7,
Sept. 2008.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
スピン注入磁化反転MTJを用いた不揮発性SRAM:通常動作時消費電力の削減,
第69回応用物理学会学術講演会,
第69回応用物理学会学術講演会予稿集,
Vol. 2,
p. 667 5a-R-11,
Sept. 2008.
-
周藤悠介,
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
Pseudo-spin-MOSFETを用いた不揮発性SRAM:消費電力削減の効果,
第69回応用物理学会学術講演会,
第69回応用物理学会学術講演会予稿集,
Vol. 2,
p. paper 5a-R-12,
Sept. 2008.
-
Ryosyo Nakane,
原田智之,
杉浦邦晃,
SATOSHI SUGAHARA,
Masaaki Tanaka.
シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用,
第69回応用物理学会学術講演会,
paper 3p-CA-3,
Sept. 2008.
-
Satoshi Sugahara,
Yota Takamura,
Ryosyo Nakane,
Yusuke Shuto,
Shuu'ichirou Yamamoto.
スピンMOSFET を用いたスピントランジスタ・エレクトロニクス,
第69回応用物理学会学術講演会,
paper 3p-E-3,
Sept. 2008.
-
髙村陽太,
Ryosyo Nakane,
SATOSHI SUGAHARA.
RTAによって作製したフルホイスラー合金Co2FeSiの規則度,
第69回応用物理学会学術講演会,
paper 2a-ZR-6,
Sept. 2008.
-
Sanjeewa Dissanayake,
熊谷寛,
周藤悠介,
SATOSHI SUGAHARA,
高木信一.
酸化濃縮法による(110)面超薄膜GOIpMOSFETデバイス作製,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
p. 7p-ZL-2,
July 2008.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
スピン注入磁化反転MTJを用いた不揮発性SRAM:仮想接地セルアーキテクチャ,
第55回応用物理学会関連連合講演会,
paper 30p-F-7,
Mar. 2008.
-
Shuu'ichirou Yamamoto,
SATOSHI SUGAHARA.
スピン注入磁化反転MTJを用いた不揮発性SRAM:Vhalfの影響,
第55回応用物理学会関連連合講演会,
paper 30p-F-8,
Mar. 2008.
-
田辺聡,
中北要佑,
原田智之,
Sanjeewa Dissanayake,
Ryosyo Nakane,
竹中充,
SATOSHI SUGAHARA,
高木信一.
GOI pMOSFETの正孔反転層における移動度の評価,
第55回応用物理学関係連合講演会,
paper 28p-ZR-9,
Mar. 2008.
-
森井清仁,
Sanjeewa Dissanayake,
田辺聡,
Ryosyo Nakane,
竹中充,
SATOSHI SUGAHARA,
高木信一.
メタルソース・ドレインnチャネルGOI MOSFETのチャネル電子移動度測定,
第55回応用物理学関係連合講演会,
paper 29a-P11-15,
Mar. 2008.
-
遠藤裕幸,
周藤悠介,
Masaaki Tanaka,
SATOSHI SUGAHARA.
強磁性半導体Ge1-xFex薄膜におけるアニール効果,
第55回応用物理学関係連合講演会,
paper 29a-X-1,
Mar. 2008.
-
Y. Takamura,
Y. Nagahama,
A. Nishijima,
R. Nakane,
H. Munekata,
S. Sugahara.
RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造,
第55回応用物理学会関連連合講演会,
28a-F-4,
Mar. 2008.
Official location
-
Satoshi Sugahara,
Shuu'ichirou Yamamoto.
Operating analysis of pseudo-spin-MOSFETs using MTJ with current-induced magnetization switching,
The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Scieties,
Extended Abstracts (The 55th Spring Meeting, 2008); The Japan Society of Applied Physics and Related Scieties,
p. 30p-F-6,
Mar. 2008.
-
SATOSHI SUGAHARA.
スピン機能MOSFETとその高機能ロジックへの展開-電荷とスピンの融合による新しい高性能・高機能集積回路技術-,
JST Innovation Bridge,
JST Innovation Bridge,
p. B2,
Mar. 2008.
-
SATOSHI SUGAHARA.
スピンMOSFETとその高機能ロジックへの応用,
STRJワークショップ2007,
STRJワークショップ2007,
p. 6E, Invited paper,
Mar. 2008.
-
Yota Takamura,
Akira Nishijima,
Yohei Nagahama,
Ryosyo Nakane,
Hiro MUNEKATA,
SATOSHI SUGAHARA.
Rapid Thermal Annealingを用いたフルホイスラー合金の作製と評価,
第12回半導体スピン工学の基礎と応用 (PASPS-12),
P6,
Dec. 2007.
Official location
-
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Application of pseudo spin-MOSFET/spin-MOSFET for non-volatile SRAM/latch circuits,
The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics,
Extended Abstracts (The 68th Autumn Meeting, 2007); The Japan Society of Applied Physics,
vol. 1,
p. 496,
Sept. 2007.
-
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Proposal and theoretical analysis of pseudo spin-MOSFETs using MTJ devices,
The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics,
Extended Abstracts (The 68th Autumn Meeting, 2007); The Japan Society of Applied Physics,
vol. 1,
p. 496,
Sept. 2007.
-
Shuu'ichirou Yamamoto,
Satoshi Sugahara.
Non-volatile SRAM/latch circuits using MTJ devices with spin transfer torque magnetization switching,
The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics,
Extended Abstracts (The 68th Autumn Meeting, 2007); The Japan Society of Applied Physics,
p. 7p-S-18,
Sept. 2007.
-
SATOSHI SUGAHARA.
Si(001),Si(110),Si(111)基板上へのMnドープGe薄膜のエピタキシャル成長と磁性,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
p. 5a-S-10,
Sept. 2007.
-
周藤悠介,
田中雅明,
SATOSHI SUGAHARA.
Si(001)基板上にエピタキシャル成長した強磁性半導体Ge1-xFex薄膜の結晶性と磁性,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
Sept. 2007.
-
星井拓也,
出浦桃子,
杉山正和,
Ryosyo Nakane,
SATOSHI SUGAHARA,
竹中充,
中野義昭,
高木信一.
微小孔を介したSi 基板上InGaAs 成長におけるモフォロジー向上,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
p. 7p-E-13,
Sept. 2007.
-
Sanjeewa Dissanayake,
周藤悠介,
SATOSHI SUGAHARA,
竹中充,
高木信一.
酸化濃縮法で作成された(110)面GOI基板ヘのアニール効果,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
p. 7p-ZL-3,
Sept. 2007.
-
Yota Takamura,
Yohei Nagahama,
Ryosyo Nakane,
Hiro MUNEKATA,
SATOSHI SUGAHARA.
Characterization of Heusler alloys on amorphous insulator films formed by RTA method,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
5a-S-1,
Sept. 2007.
Official location
-
Yota Takamura,
Akira Nishijima,
Ryosyo Nakane,
Hiro MUNEKATA,
SATOSHI SUGAHARA.
Germanium-on-insulator (GOI)基板を用いたホイスラー合金の作製とその評価,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
p. 5a-S-2,
Sept. 2007.
Official location
-
SATOSHI SUGAHARA.
シリコン・スピンエレクトロニクス ~材料・デバイス・回路~,
日本半導体製造装置協会(SEAJ)講演会,
日本半導体製造装置協会(SEAJ)講演会,
Invited paper,
Sept. 2007.
-
Ryosyo Nakane,
田中雅明,
SATOSHI SUGAHARA.
Siキャップ層による強磁性Fe3Si薄膜形成温度の低温化,
第68回応用物理学会学術講演会,
第68回応用物理学会学術講演会,
p. 5a-S-9,
Sept. 2007.
-
Yota Takamura,
Ryosyo Nakane,
Hiro MUNEKATA,
SATOSHI SUGAHARA.
Preparation of Heusler alloys employing silicon-on-insulator (SOI) substrates and their magnetic properties,
第54回応用物理学関係連合講演会,
第54回応用物理学関係連合講演会,
p. 28a-ZT-9,
Mar. 2007.
-
Masaaki Tanaka,
Pham Nam Hai,
Masafumi Yokoyama,
Shinobu Ohya,
SATOSHI SUGAHARA.
III-V族ベース・エピタキシャル強磁性トンネル接合とトンネル磁気抵抗効果,
文部科学省 RR2002 ITプログラム「高機能・超低消費電力メモリの開発」プロジェクト 平成17年度成果報告会,
Mar. 2006.
-
Masaaki Tanaka,
Yusuke Shuto,
Shinsuke Yada,
杉浦 邦晃,
Pham Nam Hai,
Masafumi Yokoyama,
Shinobu Ohya,
Ryosyo Nakane,
SATOSHI SUGAHARA.
半導体スピントロニクス・ヘテロ構造電子デバイスの研究,
文部科学省科学研究費補助金特定領域研究「半導体ナノスピントロニクス」平成17年度成果報告会,
Jan. 2006.
-
周藤悠介,
田中雅明,
菅原聡.
エピタキシャル強磁性半導体Ge1-xFex薄膜の結晶性および磁性,
第53回応用物理学関係連合講演会, 東京,,
pp. 24a-ZM-11, Invited paper,
2006.
-
周藤悠介,
田中雅明,
菅原聡.
強磁性半導体Ge1-xFexにおける結晶構造と強磁性との相関,
第67回応用物理学会学術講演会, 草津,,
pp. 31a-ZK-8,
2006.
-
矢田慎介,
田中雅明,
菅原聡.
Ge1-xMnx薄膜の成長速度制御による相分離抑止エピタキシャル成長とその磁性,
第67回応用物理学会学術講演会, 草津,,
pp. 31a-ZK-9,
2006.
-
Sanjeewa Dissanayake,
熊谷寛,
菅原聡,
高木信一.
(110)面SiGe/SOI構造の酸化濃縮による(110)GOI基板の作製,
第67回応用物理学会学術講演会, 草津,,
pp. 31p-ZG-15,
2006.
-
周藤悠介,
田中雅明,
菅原聡.
GeおよびSi基板上への強磁性半導体Ge1-xFex薄膜のエピタキシャル成長,
第11回「半導体スピン工学の基礎と応用」研究会, 柏,,
pp. paper PA13, pp.30-31,
2006.
-
菅原聡.
スピントランジスタ,
日本応用磁気学会第145回研究会, 東京,,
pp. 13-22, Invited paper,
2006.
-
熊谷寛,
七条真人,
石川寛人,
星井拓也,
菅原聡,
高木信一.
Ge上極薄膜Siのプラズマ酸化によるSiO2/Ge MISキャパシタの作製と界面特性評価,
応用物理学会薄膜・表面物理分科会シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」第11回研究会, 三島,,
pp. 177-182,
2006.
-
上原貴志,
菅原聡,
高木信一.
低温MBE成長を用いた超薄膜Ge-on-insulator (GOI) p-channel メタルS/D MOSFET,
第53回応用物理学関係連合講演会, 東京,,
pp. 25a-x-11,
2006.
-
菅原聡,
中根了昌,
高木信一.
オーミックコンタクト合金を用いたメタル・ソース/ドレインMOSFET,
第53回応用物理学関係連合講演会, 東京,,
pp. 25a-x-12,
2006.
-
高木信一,
菅原聡.
III-V族化合物半導体n-MOSFETの電気特性の比較,
第53回応用物理学関係連合講演会, 東京,,
pp. 26p-x-1,
2006.
-
七条真人,
菅原聡,
高木信一.
III-V on insulator (III-V-OI)MOSFET応用に向けたSi基板上のIII-V族化合物半導体エピタキシャル成長法,
第53回応用物理学関係連合講演会, 東京,,
pp. 26p-x-2,
2006.
-
中根了昌,
田中雅明,
菅原聡.
Silicon-on-snsulator (SOI) 基板上の強磁性Fe1-xSix薄膜の磁性と構造評価,
第53回応用物理学関係連合講演会, 東京,,
pp. 24a-ZM-10,
2006.
-
田中雅明,
中根了昌,
杉浦邦晃,
周藤悠介,
矢田慎介,
菅原聡.
IV族ベース・スピントロニクスデバイスと再構成可能な論理回路,
第67回応用物理学会学術講演会, 草津,,
pp. 31p-RD-1, Invited paper,
2006.
-
菅原聡.
スピントランジスタの研究動向,
応用物理学会薄膜・表面物理分科会主催第34回薄膜・表面セミナー, 東京,,
pp. 59-70, Invited paper,
2006.
-
星井拓也,
菅原聡,
高木信一.
ひずみSi MOSFETのゲート トンネル電流に与えるひずみの効果,
第53回応用物理学関係連合講演会, 東京,,
pp. 26a-x-7,
2006.
-
Pham Nam Hai,
SATOSHI SUGAHARA,
Masaaki Tanaka.
単電子スピントランジスタを用いた再構成可能な論理回路(II),
平成17年秋季第66回応用物理学会関連連合講演会,
Sept. 2005.
-
Masaaki Tanaka,
Pham Nam Hai,
Masafumi Yokoyama,
Yusuke Shuto,
アーサンナズムル,
Shinobu Ohya,
SATOSHI SUGAHARA.
半導体スピントロニクス・ヘテロ構造電子デバイスの研究,
文部科学省科学研究費補助金特定領域研究「半導体ナノスピントロニクス」平成17年度 「夏の研究会」,
June 2005.
-
Pham Nam Hai,
SATOSHI SUGAHARA,
Masaaki Tanaka.
GaAs:MnAs ナノクラスター/AlAs/GaAs/MnAs ヘテロ構造におけるトンネル磁気抵抗効果,
平成17年春季第52回応用物理学会関連連合講演会,
Mar. 2005.
-
周藤悠介,
田中雅明,
菅原聡.
Ge(100)基板上にエピタキシャル成長したMnドープGe薄膜における強磁性の起源,
第52回応用物理学関係連合講演会, さいたま,,
pp. 30a-YD-11,
2005.
-
菅原聡,
杉浦邦晃,
中根了昌,
田中雅明.
強磁性Fe1-xSixをショットキー・ソース/ドレインに用いたスピンMOSFETの作製,
第52回応用物理学関係連合講演会, さいたま,,
pp. 29a-YD-9,
2005.
-
熊谷寛,
七条真人,
石川寛人,
星井拓也,
菅原聡,
高木信一.
Ge上薄膜Siのプラズマ酸化によるSiO2/Ge MISキャパシタの作製と電気特性,
第66回応用物理学会学術講演会, 徳島,,
pp. 8p-ZK-21,
2005.
-
中根了昌,
田中雅明,
菅原聡.
Silicon-on-snsulator (SOI) 基板を用いた強磁性Fe1-xSixの作製と磁気特性,
第66回応用物理学会学術講演会, 徳島,,
pp. 10a-ZQ-6,
2005.
-
杉浦邦晃,
中根了昌,
菅原聡,
田中雅明.
強磁性金属-Si接合におけるショットキー障壁高さの評価,
第52回応用物理学関係連合講演会, さいたま,,
pp. 30a-YD-1,
2005.
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矢田慎介,
田中雅明,
菅原聡.
アモルファスGe1-xMnx薄膜の磁性評価,
第66回応用物理学会学術講演会, 徳島,,
pp. 10a-ZQ-7,
2005.
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周藤悠介,
田中雅明,
菅原聡.
強磁性Ge1-xMnx薄膜のエピタキシャル成長と磁気特性,
第66回応用物理学会学術講演会, 徳島,,
pp. 10a-ZQ-8,
2005.
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菅原聡.
スピン素子の現状と今後の展望,
電気学会「超微細・低電力デバイス集積技術調査専門委員会」「超高速デバイス・回路技術調査専門委員会」合同調査専門委員会, 東京,,
pp. Invited paper,
2005.
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菅原聡.
スピントランジスタ,
応用物理学会スピンエレクトロニクス研究会, 東京,,
pp. 70-79, Invited paper,
2005.
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高木信一,
熊谷寛,
西川昌志,
武田浩司,
菅原聡.
Ge系MOSトランジスタへの期待,
第52回応用物理学関係連合講演会, さいたま,,
pp. 30p-S-2,
2005.
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武田浩司,
熊谷寛,
西川昌志,
菅原聡,
高木信一.
ひずみSi p-MOSFETにおける反転層正孔移動度のユニバーサリティ,
第52回応用物理学関係連合講演会, さいたま,,
pp. 31a-P5-26,
2005.
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熊谷寛,
西川昌志,
武田浩司,
菅原聡,
高木信一.
SiN/Ge MIS キャパシタのCV特性に与える基板タイプの影響,
第52回応用物理学関係連合講演会, さいたま,,
pp. 1a-P6-28,
2005.
-
周藤悠介,
田中雅明,
菅原聡.
CrドープSi薄膜のエピタキシャル成長と磁性評価,
第52回応用物理学関係連合講演会, さいたま,,
pp. 30a-YD-10,
2005.
-
Nazmul A. M.,
Tomohiro Amemiya,
Yusuke Shuto,
SATOSHI SUGAHARA,
Masaaki Tanaka.
Mn デルタドープGaAsをベースとした半導体へテロ構造における高温強磁性とその制御,
第51回春季応用物理学関係連合講演会,
31p-ZK-7,
2004.
Other Publication
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菅原聡.
スピントランジスタ,
電子情報通信学会誌,
Vol. 88,
No. 7,
pp. 541-550,
2005.
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SATOSHI SUGAHARA.
CMOS プラットフォームを用いた新技術の創成:超低消費電力 CMOS ロジックシステム,BeyondCMOS デバイス,体温を用いた熱電発電モジュール,
日本熱電学会誌,
vol. 18,
no. 3,
pp. 159-162,
Apr. 2022.
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SATOSHI SUGAHARA.
体温を用いたマイクロ熱電発電モジュール技術,
まてりあ,
Vol. 60,
no. 9,
pp. 562-566,
Sept. 2021.
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M. Tanaka,
S. Ohya,
Y. Shuto,
S. Yada,
S. Sugahara.
III-V and Group-IV Based Ferromagnetic Semiconductors for Spintronics,
Comprehensive Nanoscience and Technology,Academic Press (Oxford),
Vol. 4,
pp. 447-462,
Feb. 2011.
-
SATOSHI SUGAHARA,
Yusuke Shuto,
Shuu'ichirou Yamamoto.
CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望,
Magnetics Jpn.,
vol. 6,
no. 1,
pp. 5-15,
2011.
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S. Sugahara,
J. Nitta.
Spin-Transistor Electronics: An Overview and Outlook,
Proceedings of the IEEE,
vol. 98,
no. 12,
pp. 2124-2154,
2010.
-
SATOSHI SUGAHARA,
Yusuke Shuto,
Shuu'ichirou Yamamoto.
スピン機能MOSFETによる不揮発性ロック 不揮発性パワーゲーティング・ロジックへの応用 不揮発性SRAM/フリップフロップの可能性を検証,
Semiconductor FPD World,
pp. 46-49,
Sept. 2009.
-
SATOSHI SUGAHARA.
スピン機能MOSFETによる新しいエレクトロニクスの展開,
応用物理,
vol. 78,
no. 3,
pp. 236-241,
2009.
-
Shuu'ichirou Yamamoto,
Yusuke Shuto,
SATOSHI SUGAHARA.
スピン機能CMOSによる不揮発性高機能・高性能ロジック,
スピントロニクスの基礎と材料・応用技術の最前線,
シーエムシー出版,
27章,
pp. 319-330,
2009.
-
M.Tanaka,
S.Sugahara.
MOS-Based Spin Devices for Reconfigurable Logic,
IEEE Trans. Electron. Dev.,
Vol. 54,
No. 5,
pp. 961-976,
May 2007.
-
S.Takagi,
T.Tezuka,
T.Irisawa,
S.Nakaharai,
T.Numata,
K.Usuda,
N.Sugiyama,
M.Shichijo,
R.Nakane,
S.Sugahara.
Device Structures and Carrier Transport Properties of Advanced CMOS Using High Mobility Channels,
Solid-State Electronics,
Vol. 51,
No. 4,
pp. 526-536,
Apr. 2007.
-
S.Sugahara.
Perspective on Field-Effect Spin-Transistors,
Physica Status Solidi C,
Vol. 3,
No. 12,
pp. 4405-4413,
2006.
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S.Sugahara,
M.Tanaka.
Spin MOSFETs As a Basis for Spintronics,
ACM Trans. on Storage,
Vol. 2,
No. 2,
pp. 197-219,
2006.
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