論文

• Iriya Muneta, Shinobu Ohya, Hiroshi Terada, Masaaki Tanaka. Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor, Nature Communications, Nature Publishing Group, Vol. 7, 12013, June 2016.  公式リンク  
  
• Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka. Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet, Nature Communications, Nature Publishing Group, Vol. 8, 15387, May 2017.  公式リンク  
  
• Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer, Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, p. SC1015, Jan. 2023.  公式リンク  
  
• Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact, IEEE Journal of the Electron Devices Society, IEEE, Vol. 11, p. 15-21, Nov. 2022.  公式リンク  
  
• Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure, Scientific Reports, Vol. 12, pp. 17199, Oct. 2022.
• Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing, Japanese Journal of Applied Physics, Vol. 61, 075506, July 2022.
• Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Emi Kano, Nobuyuki Ikarashi, Hitoshi Wakabayash. Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takamasa KAWANAGO, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya HOSHII, Kuniyuki Kakushima, Kazuo TSUTSUI, Hitoshi WAKABAYASHI. Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box, Journal of the Electron Devices Society (J-EDS), Vol. 9, p. 1117, Aug. 2021.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH10, Feb. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH05, Jan. 2021.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH04, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation, Japanese Journal of Applied Physics (JJAP), Vol. 59, No. 10, Page 105501, Sept. 2020.
• Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo. Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 59, No. 8, Page 80906, Aug. 2020.
• Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization, Journal of the Electron Devices Society (J-EDS), IEEE, Vol. 7, No. 1, pp. 1258-1263, Dec. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing, Applied Physics Letters, Vol. 115, p. 192404, Nov. 2019.
• Jaejun Kim, Hiroyoshi Ohtsu, Taizen Den, Krittanun Deekamwong, Iriya Muneta, Masaki Kawano. Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory, Chemical Science, Royal Society of Chemistry, Vol. 10, pp. 10888 - 10893, Oct. 2019.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration, IEEE Journal of the Electron Devices Society, IEEE, Vol. 6, pp. 1251 - 1257, Nov. 2018.  公式リンク  
  
• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout, Journal of the Electron Devices Society (J-EDS), vol. 8, pp. 1244-1250, Nov. 2018.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi, N. Ikarashi. Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing, Journal of the Electron Devices Society, Vol. 7, No. 1, p. 2, Oct. 2018.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing, JPN J APPL PHYS, 57, 07MA04, June 2018.
• N. Hayakawa, Iriya Muneta, Takumi Ohashi, Kenntarou Matsuura, Junnichi Shimizu, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control, Japan Journal of Applied Physics, IOP Publishing, Vol. 57, 04FP13, Mar. 2018.  公式リンク  
  
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization, Journal of Electrical Materials, Springer US, Vol. 47, No. 7, pp. 3497, Mar. 2018.
• Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness, Applied Physics Express, IOP Publishing, Vol. 10, Mar. 2017.  公式リンク  
  
• "Jun’ichi Shimizu", "Takumi Ohashi", "Kentaro Matsuura", "Iriya Muneta", "Kuniyuki Kakushima", "Kazuo Tsutsui", "Hitoshi Wakabayashi". High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs, Japanese Journal of Applied Physics (JJAP), Vol. 56, No. 4S, 2017.
• Tomoaki Ishii, Tadashi Kawazoe, Yusuke Hashimoto, Hiroshi Terada, Iriya Muneta, Motoichi Ohtsu, Masaaki Tanaka, Shinobu Ohya. Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements, Physical Review B, American Physical Society, Vol. 93, No. 24, p. 241303, June 2016.  公式リンク  
  
• Masaki Kobayashi, Iriya Muneta, Yukiharu Takeda, Yoshihisa Harada, Atsushi Fujimori, Juraj Krempaský, Thorsten Schmitt, Shinobu Ohya, Masaaki Tanaka, Masaharu Oshima, Vladimir N. Strocov. Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga,Mn)As, Physical Review B, APS, Vol. 89, No. 20, p. 205204, May 2014.
• Iriya Muneta, Hiroshi Terada, Shinobu Ohya, Masaaki Tanaka. Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism, Applied Physics Letters, AIP Publishing, Vol. 103, No. 3, p. 032411, July 2013.
• Masaki Kobayashi, Iriya Muneta, Thorsten Schmitt, Luc Patthey, Shinobu Ohya, Masaaki Tanaka, Masaharu Oshima, Vladimir N. Strocov. Digging up bulk band dispersion buried under a passivation layer, Applied Physics Letters, AIP Publishing, Vol. 101, No. 24, p. 242103, Dec. 2012.
• Shinobu Ohya, Iriya Muneta, Yufei Xin, Kenta Takata, Masaaki Tanaka. Valence-band structure of ferromagnetic semiconductor (In,Ga,Mn)As, Physical Review B, APS, Vol. 86, No. 9, p. 094418, Sept. 2012.
• Iriya Muneta, Shinobu Ohya, Masaaki Tanaka. Spin-dependent tunneling transport in a ferromagnetic GaMnAs and un-doped GaAs double-quantum-well heterostructure, Applied Physics Letters, AIP Publishing, Vol. 100, No. 16, p. 162409, Apr. 2012.
• Shinobu Ohya, Iriya Muneta, Pham Nam Hai, Masaaki Tanaka. Valence-Band Structure of the Ferromagnetic Semiconductor GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy, PHYSICAL REVIEW LETTERS, Vol. 104, p. 167204, Apr. 2010.
• Shinobu Ohya, Iriya Muneta, Masaaki Tanaka. Quantum-level control in a III–V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers, Applied Physics Letters, AIP Publishing, Vol. 96, No. 5, p. 052505, Feb. 2010.
• Shinobu Ohya, Iriya Muneta, Pham Nam Hai, Masaaki Tanaka. GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier, Applied Physics Letters, Vol. 95, p. 242503, Dec. 2009.

国際会議発表 (査読有り)

• Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs, International Conference on Solid State Devices and Materials, Sept. 2023.
• Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure, Intermag 2023, May 2023.
• Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Ryo Ono, Shinya Imai, Takamasa Kawanago, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs, International Conference on Solid State Devices and Materials, Sept. 2021.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi. Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region, International Conference on Solid State Devices and Materials, Sept. 2021.
• Takuya Hamada, Taiga Horiguchi, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering, Internatonal Conference on Solid State Devices and Materials, Sept. 2021.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices, IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), pp. 217-219, Apr. 2021.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Shigetaka Tomiya, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Ryunosuke Otsuki, Yuta Suzuki, Takuro Sakamoto, Takanori Shirokura, Iriya Muneta, Masahiro Nagao, Hitoshi Wakabayashi, Nobuyuki Ikarashi. Structural analysis of MoS2 films fabricated by radiofrequency sputtering using highangle annular dark field scanning transmission electron microscopy, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019), Nov. 2019.
• H. Tanigawa, K. Matsuura, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET, Int. Conf. on Solide State Devices and Materials (SSDM2019), Sept. 2019.
• Iriya Muneta, Naoki Hayakawa, Takanori Shirokura, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetic tunnel devices with two-dimensional layered material MoS2, Collaborative Conference on Materials Research (CCMR) 2019, June 2019.
• K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi. Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration, Int. Workshop on Juction Technology (IWJT2019), June 2019.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.
• T. Sakamoto, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, Y. Suzuki, N. Ikarashi, H. Wakabayashi. Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• Kazuya Hisatsune, Yoshihisa Takaku, Kohei Sasa, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors, Int. Conf. on Sold State Devices and Materials (SSDM2018), Sept. 2018.
• Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigyo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Sinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately, 44th European Solid-State Circuits Conference (ESSDERC2018), Sept. 2018.
• I. Muneta, Danial B. Z., N. Hayakawa, K. Kakushima, K. Tsutsui, H. Wakabayashi. Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate, International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS), Aug. 2018.
• K. Kakushima, T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai. New methodology for evaluating minority carrier lifetime for process assessment, Symp. On VLSI Technology (VLSI2018), June 2018.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, pp. 104-106, Mar. 2018.
• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout, The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018), Mar. 2018.
• Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, HIROSHI IWAI, K. Kakushima. Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure, China Semiconductor Technology International Conference (CSTIC2018), Mar. 2018.
• Suguru Tatsunokuchi, Iriya Muneta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Photovoltaic Properties of Lateral Si Nano Wall Solar Cells, 2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017), Nov. 2017.
• Iriya Muneta, Hiroshi Terada, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka. (Invited) Sudden restoration of the band ordering at the onset of ferromagnetic transition and magnetic anisotropy control by the quantum size effect in a ferromagnetic semiconductor, 62nd Annual Conference on Magnetism and Magnetic Materials, Nov. 2017.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing, Advanced Metallization Conference 2017: 27th Asian Session, Oct. 2017.  公式リンク  
  
• N. Hayakawa, I. Muneta, T. Ohashi, K. Matsuura, J. Shimizu, K. Kakushima, K. Tsutsui, H. Wakabayashi. Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure, International Conference on Solid State Devices and Materials, Sept. 2017.
• M. Tanaka, S. Ohya, L.D. Anh, N.T. Tu, I. Muneta, P.N. Hai. (Invited) Recent progress and topics in semiconductor spintronics and ferromagnetic semiconductors, Junjirou Kanamori Memorial International Symposium – New Horizon of Magnetism-, Sept. 2017.
• K. Kakushima, T. Suzuki, T. Hoshii, I. Muneta, H. Wakabayashi, HIROSHI IWAI, Y. Aoki,H. Nohira Aoki, KAZUO TSUTSUI. Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• S. Hirano, J. Shimizu, K. Matsuura, T. Ohashi, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 234-235, June 2017.  公式リンク  
  
• K. Kakushima, Yuta Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa. Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi. Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET, IEEE Electron Device Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 222-223, June 2017.  公式リンク  
  
• 岡田 泰典, 山口 晋平, 大橋 匠, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas, International Workshop on Junction Technology, June 2017.
• Iriya Muneta. (Invited) Band structure and ferromagnetism in ferromagnetic semiconductor GaMnAs, Collaborative Conference on Materials Research, June 2017.
• Kakushima, K., Ikeuchi, Y., Hoshii, T., Iriya Muneta, Wakabayashi, H., Tsutsui, K., Iwai, H., Kikuchi, T., Ishikawa, S., Takuya Hoshii. Low temperature ohmic contact for p-type GaN using Mg electrodes, 17th International Workshop on Junction Technology, IWJT 2017, pp. 85-86, 2017.  公式リンク  
  
• Kakushima, K., Suzuki, T., Hoshii, T., Iriya Muneta, Wakabayashi, H., Tsutsui, K., Iwai, H., Nohira, H., Takuya Hoshii. Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes, 17th International Workshop on Junction Technology, IWJT 2017, pp. 81-82, 2017.  公式リンク  
  
• K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT, 62th International Electron Devices Meeting (IEDM2016), p. 268, Dec. 2016.
• Iriya Muneta. (Invited) Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor, Energy Materials and Nanotechnology Meeting on Spintronics, Oct. 2016.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC, International Conference on Solid State Devices and Materials, Sept. 2016.
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film, Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC), 2016.
• S. Ohya, I. Muneta, K. Takata, Y. Xin, P. N. Hai, M. Tanaka. (Invited) Spin-dependent resonant tunneling and the valence-band picture of III-V-based ferromagnetic semiconductors, 17th International Conference on Molecular Beam Epitaxy, Sept. 2012.
• Masaaki Tanaka, Shinobu Ohya, Ryosyo Nakane, Pham Nam Hai, Shinsuke Yada, Ryota Akiyama, Yoshisuke Ban, Shoichi Sato, Iriya Muneta, Ryohei Okazaki, Le Duc Anh. Spintronics: Materials and Devices: A New Spin on Semiconductors - Spintronics Research Opens the Way to New Semiconductor Technology, International Symposium on Secure-Life Electronics, Jan. 2012.
• S. Ohya, I. Muneta, K. Takata, Y. Xin, P. N. Hai, M. Tanaka. (Invited) Valence-band structure of (III,Mn)As ferromagnetic semiconductors, Joint Polish-Japanese Workshop “Spintronics - from new materials to applications”, Nov. 2011.
• S. Ohya, K. Takata, I. Muneta, P. N. Hai, Y. Xin, M. Tanaka. (Invited) Valence-band structure of the ferromagnetic semiconductor GaMnAs, 5th International Workshop on Spin Currents, July 2011.
• Masaaki Tanaka, Pham Nam Hai, Iriya Muneta, Shinobu Ohya. (Invited) III-V based magnetic heterostructures and nanostructures: Bandstructure, spin dependent tunneling, and magnetoresistance, Sweden-Japan Workshop on Quantum Nanoelectronics (QNANO 2011), June 2011.
• S. Ohya, I. Muneta, K. Takata, P. N. Hai, M. Tanaka. (Invited) Resonant tunneling spectroscopy and valence-band picture of the ferromagnetic semiconductor GaMnAs, International Magnetics Conference 2011 (Intermag 2011), Apr. 2011.
• Shinobu Ohya, Iriya Muneta, Pham Nam Hai, Masaaki Tanaka. Fermi level position and valence band structure in GaMnAs studied by spin-dependent resonant tunneling spectroscopy, The 6th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS6), Aug. 2010.

国内会議発表 (査読有り)

• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Magnetic property in sputtered MoS2 thin film on growth temperature, 第23回 半導体におけるスピン工学の基礎と応用（PASPS-23), Dec. 2018.
• 大矢 忍, 宗田伊理也, ファム ナム ハイ, 高田健太, 田中雅明. (招待講演) 強磁性半導体GaMnAsへテロ構造におけるスピン依存伝導, 2010年春季第57回応用物理学関係連合講演会のシンポジウム「スピントロニクスデバイスの新展開」, Mar. 2010.

国際会議発表 (査読なし・不明)

• K. Hisatsune, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, K. Kakushima. Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors, 235th ECS Meeting, May 2019.
• C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3, ECS Meeting, May 2018.
• D. Saito, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Reliability of SiC Schottky Diodes with Mo2C Electrode, ECS Meeting, May 2018.
• H. Kataoka, H. Iwai, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. A Defect Density Profile Extraction Method for GaN Epi-Wafers, ECS Meeting, Apr. 2018.
• K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. 3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat), ASICON2017, Proceedings of International Conference on ASIC, Vol. 2017-October, pp. 1137-1140, Oct. 2017.  公式リンク  
  
• Shinobu Ohya, Iriya Muneta, Pham Nam Hai, Masaaki Tanaka. Investigation on the valence-band structure of ferromagnetic-semiconductor GaMnAs using spin-dependent resonant tunneling spectroscopy, 2010 APS Annual March Meeting, Mar. 2010.

国内会議発表 (査読なし・不明)

• 岡村 俊吾, 宗田 伊理也, 白倉 孝典, 若林 整. MoS2極薄膜における磁化特性の層数依存性, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 今井 慎也, 梶川 亮介, 川那子 高暢, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 梶川 亮介, 川那子 高暢, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 寺岡 楓, 今井 慎也, 黒原 啓太, 伊東 壮真, 川那子 高暢, 宗田 伊理也, 角嶋 邦之, 若林 整. Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 武田 高志, 小野 凌, 草間 優太, 狩野 絵美, 宗田 伊理也, 若林 整, 五十嵐 信行. スパッタ成膜MoS2の基板上での原子分解能電子顕微鏡観察, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• Peilong Wang, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs, 70th JSAP Spring meeting, Mar. 2023.
• 濱田 昌也, 松浦 賢太朗, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact, 第70回応用物理学会春季学術講演会, Mar. 2023.
• 水谷 一翔, 星井 拓也, 川那子 高暢, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 今井 慎也, 小野 凌, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. MoS2膜質のスパッタ成膜レート依存性調査, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 小野 凌, 今井 慎也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 立松 真一, 濱田 昌也, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. アニール処理によるWS2-Niエッジコンタクト特性の向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 宗田 伊理也, 白倉 孝典, ファム ナムハイ, 角嶋 邦之, 筒井 一生, 若林 整. 強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 宗田 伊理也, 白倉 孝典, PHAM NAM HAI, 角嶋 邦之, 筒井 一生, 若林 整. Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS2, 第63回フラーレン・ナノチューブ･グラフェン総合シンポジウム, Aug. 2022.
• 宗田 伊理也, 白倉 孝典, ファム ナム ハイ, 角嶋 邦之, 筒井 一生, 若林 整. 二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調, 2022年第69回応用物理学会春季学術講演会, Mar. 2022.
• 松浦 賢太朗, 濱田 昌也, 濱田 拓也, 谷川 晴紀, 坂本 拓朗, 堀 敦, 宗田 伊理也, 川那子 高暢, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 渡辺正裕, 執行直之, 星井拓也, 古川和由, 角嶋邦之, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内 潔, 宗田伊里也, 若林 整, 中島 昭, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋. トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション, 電子情報通信学会 SDM(シリコン材料・デバイス)研究会, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 273, pp. 45-48, Nov. 2019.
• 山岸 朋彦, 堀 敦, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing, The 80th JSAP Autumn meeting, Sept. 2019.
• 今井 慎也, 濱田 昌也, 五十嵐 智, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 硫化プロセスにおけるスパッタMoS2膜質向上の重要性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 谷川 晴紀, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. 正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 昌也, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 谷川 晴紀, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 松浦賢太朗, 清水淳一, 外山真矢人, 大橋匠, 坂本拓朗, 宗田伊理也, 石原聖也, 角嶋邦之, 筒井一生, 小椋厚志, 若林整. 大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.
• 佐々木 杏民, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響, Sept. 2018.
• 五十嵐 智, 松浦 賢太朗, 濱田 昌也, 谷川 晴紀, 坂本 拓朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 谷川 晴紀, 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 松浦 賢太朗, 清水 淳一, 外山 真矢人, 大橋 匠, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Growth temperature dependence of magnetic property of sputtered MoS2 thin film, The 79th JSAP Autumn meeting, Sept. 2018.
• 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 岩塚 春樹, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. Siを導入したHfO2のMIMキャパシタの容量特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 佐々 康平, 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 酸化セリウムを挿入したMIMキャパシタの充放電特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• Chen-Yi Su, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3, 65th JSAP Spring meeting, Mar. 2018.
• 宗田 伊理也. [第9回シリコンテクノロジー分科会研究奨励賞受賞記念講演] Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet, 第65回応用物理学会春季学術講演会, Mar. 2018.
• Zulkornain Bin Danial, 宗田 伊理也, 早川 直希, 角嶋 邦之, 筒井 一生, 若林 整. Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 坂本 拓朗, 大橋 匠, 松浦 賢太朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減, Mar. 2018.
• 大橋 匠, 坂本 拓朗, 松浦 賢太朗, 清水 淳一, 外山 真矢人, 石原 聖也, 日比野 祐介, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. Migration制御したスパッタリング法による2次元層状MoS2成膜, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 安重 英祐, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 筒井一生, 角嶋邦之, 星井 拓也, 中島 昭, 西澤 伸一, 若林整, 宗田伊理也, 佐藤 克己, 末代 知子, 齋藤 渉, 更屋 拓哉, 伊藤 一夫, 福井 宗利, 鈴木 慎一, 小林 正治, 高倉 俊彦, 平本 俊郎, 小椋 厚志, 沼沢 陽一郎, 大村 一郎, 大橋 弘通, 岩井洋. 三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術), 電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 電気学会, Vol. 2017, No. 74, pp. 1-6, Nov. 2017.
• 篠原 健朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 早川直希, 宗田伊理也, 大橋匠, 松浦賢太朗, 清水淳一, 角嶋邦之, 筒井一生, 若林整. トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 龍口 傑, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 岩井 洋, 角嶋 邦之. 横型Siナノウォール太陽電池の発電特性に関する検討, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 外山 真矢人, 大橋 匠, 松浦 賢太朗, 清水 淳一, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 安重 英祐, 大橋 匠, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• 大矢 忍, 宗田伊理也, ファム ナム ハイ, 田中雅明. スピン依存共鳴トンネル分光を用いた強磁性半導体GaMnAsにおける価電子帯解析, 2010年春季第57回応用物理学関係連合講演会, Mar. 2010.
• 田中 雅明, 大矢 忍, 中根 了昌, ファム ナム ハイ, 矢田 慎介, 秋山 了太, 國谷 瞬, 佐藤 彰一, 宗田 伊理也. スピン偏極電流制御デバイスと材料物性の研究, 特定領域研究「スピン流の創出と制御」平成21年度成果報告会, Jan. 2010.
• 大矢 忍, 宗田 伊理也, ファム ナム ハイ, 田中 雅明. AlMnAs障壁を有する強磁性半導体GaMnAs磁気トンネル接合におけるトンネル磁気抵抗効果, 特定領域研究「スピン流の創出と制御」平成21年度成果報告会, Jan. 2010.
• 大矢 忍, 宗田 伊理也, ファム ナム ハイ, 田中 雅明. AlMnAs障壁を有する強磁性半導体GaMnAs磁気トンネル接合におけるトンネル磁気抵抗効果, 2009年秋季第70回応用物理学会学術講演会, Sept. 2009.
• 大矢 忍, 宗田 伊理也, ファム ナム ハイ, 田中 雅明. III-V族強磁性半導体GaMnAsと量子へテロ構造におけるスピン依存伝導特性, 東京大学ナノ量子情報エレクトロニクスシンポジウム, Apr. 2009.

その他の論文・著書など

• Shinobu Ohya, Kenta Takata, Iriya Muneta, Namhai Pham, Masaaki Tanaka. Comment on "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel, arXiv preprint arXiv:1102.4459, 2011.

学位論文

• Band structure and ferromagnetism in III-V ferromagnetic semiconductor GaMnAs,  Thesis,  Doctor (Engineering),  The University of Tokyo,  2014/03/24, 
• Band structure and ferromagnetism in III-V ferromagnetic semiconductor GaMnAs,  Thesis,  Doctor (Engineering),  The University of Tokyo,  2014/03/24, 

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