Journal Paper

• Gensai Tei, Youhei Kiyanagi, Long Liu, Masahiro Watanabe. Near-infrared (λ ~ 1.2 µm) intersubband electroluminescence in Si/CaF₂ quantum cascade structures, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, vol. 62, June 2023.
• Gensai Tei, Long Liu, Masahiro Watanabe. Design and analysis of Si/CaF₂ near-infrared (λ~1.7 μm) DFB quantum cascade laser for silicon photonics, IEICE Transactions on Electronics, IEICE, Vol. E106-C, No. 5, May 2023.
• Long Liu, Gensai Tei, Masahiro Watanabe. Design, fabrication, and evaluation of waveguide structure using Si/CaF₂ heterostructure for near- and mid- infrared silicon photonics, IEICE Transactions on Electronics, Vol. E106-C, No. 1, Jan. 2023.
• Gensai Tei, Long Liu, Yohei Koyanagi, Masahiro Watanabe. Room temperature near-infrared electroluminescence of Si/CaF₂ quantum cascade laser structures grown on an SOI substrate, Japanese Journal of Applied Physics, vol. 60, no. SBBE03, pp. 1-5, Mar. 2021.
• Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs, IEEE Trans. On Semiconductor Manufactureing, Vol. 33, No. 2, pp. 159-165, May 2020.
• Yoshiro Kumagai, Satoshi Fukuyama, Hiroki Tonegawa, Kizashi Mikami, Kodai Hirose, Kanta Tomizawa, Kensuke Ichikawa, Masahiro Watanabe. Negative differential resistance of CaF₂/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, vol. 59, SIIE03-1, Apr. 2020.
• Akira CHIBA, Koichi YASUOKA, Shigeki NAKAGAWA, Hiroshi AKATSUKA, Atsuhiro NISHIKATA, Makoto HAGIWARA, Masahiro WATANABE, Nozomi TAKEUCHI, Shungo ZEN, Ei TOKIOKA. Improve Understanding of Basic Engineering Lectures with e-learning - Department of Electrical and Electronics Engineering -, Journal of JSEE, Japanese Society for Engineering Education, Vol. 66, No. 5, Oct. 2018.  Official location  
• Yuya Kuwata, Keita Suda, Masahiro Watanabe. Resistance switching memory characteristics of CaF₂/Si/CaF₂ resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers, Appl. Phys. Express, Vol. 9, pp. 074001-1~4, June 2016.
• Keita Suda, Yuya Kuwata, Masahiro Watanabe. Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si, Jpn. J. Appl. Phys., Vol. 54, No. 4S, 04DJ05-1, Mar. 2015.  Official location  
• Junya Denda, Kazuya Uryu, Keita Suda, Masahiro Watanabe. Resistance switching memory characteristics of Si/CaF₂/CdF₂/CaF₂/Si resonant-tunneling quantum-well structures, Appl. Phys. Express, 7, 044103-1-044103-4, Mar. 2014.
• Junya Denda, Kazuya Uryu, Masahiro Watanabe. Resistance Switching Memory Characteristics of Si/CaF₂/CdF₂ Quantum-Well Structures Grown on Metal (CoSi₂) Layer, Jpn. J. Appl. Phys., Vol. 52, No. 4, pp. 04CJ07-1-04CJ07-4, Apr. 2013.
• T. Kanazawa, A. Morosawa, R. Fuji, T. Wada, M. Watanabe, M. Asada. Suppression of Leakage Current of CdF₂/CaF₂ Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy, Jpn. J. Appl. Phys., Vol. 46, No. 6A, pp. 3388-3390, June 2007.
• T. Kanazawa, M. Watanabe, M. Asada. Room temperature negative differential resistance of CdF₂/CaF₂ double-barrier resonant tunneling diode structures grown on Si(100) substrates, Appl. Phys Lett., Vol. 90, No. 9, pp. 092101-1-092101-3, Feb. 2007.
• K. Jinen, K. Uchida, S. Kodaira, M. Watanabe, M. Asada. Improvement of electroluminescence from CdF₂/CaF₂ Intersubband light-emitting structure by trench patterning and hydrogen annealing of Si substrate, IEICE Electronics Express, Vol. 3, No. 23, pp. 493-498, Dec. 2006.
• Keisuke Jinen, Takeshi Kikuchi, Masahiro Watanabe, MASAHIRO ASADA. Room-Temperature Electroluminescence from a Single-Period (CdF₂/CaF₂) Inter-subband Quantum Cascade Structure on Si Substrate, Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3656-3658, Apr. 2006.
• Y. Niiyama, T. Murata, M. Watanabe. Optically pumped ultraviolet lasing of BeMgZnSe based quan-tum well laser structures, Phys. Stat. Solid. (c), Vol. 3, No. 4, pp. 878-880, Mar. 2006.
• Y. Niiyama, T. Murata, M. Watanabe. Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures, Appl. Phys Lett., Vol. 87, No. 14, pp. 142106-1-142106-3, Oct. 2005.
• T. Yokoyama, Y. Niiyama, T Murata, M. Watanabe. Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate, Jpn. J. Appl. Phys., Vol. 44, No. 2, pp. L75-L77, Feb. 2005.
• Y. Niiyama, M. Watanabe. BeMgZnSe based ultraviolet lasers, Semicond. Sci. Tech., Vol. 20, pp. 1187-1197, 2005.
• Y. Niiyama, T. Yokoyama, M. Watanabe. Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate, Phys. Stat. Solid. (b), Vol. 241, pp. 479-482, Mar. 2004.
• Y. Niiyama, T. Yokoyama, M. Watanabe. Effect of Buffer Layer for Epitaxial Growth of High Magnesium Content BeMgZnSe Lattice Matched to GaP (001) Substrate, Jpn. J. Appl. Phys., Vol. 42, No. 6A, pp. L599-L602, June 2003.
• T. Maruyama, N. Nakamura, M. Watanabe. Crystal Growth of BeZnSe on CaF₂/Si(111) Subtrate, Jpn. J. Appl. Phys., Vol. 41, No. 8A, pp. L876-L877, Aug. 2002.
• Y. Niiyama, T. Maruyama, N. Nakamura, M. Watanabe. Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001), Jpn. J. Appl. Phys., Vol. 41, No. 7A, pp. L751-L753, July 2002.
• Masahiro Watanabe, Tatsuya Ishikawa, Masaki Matsuda, THORU KANAZAWA, MASAHIRO ASADA. Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy, 44th 2002 Electronic Materials Conference, 44th 2002 Electronic Materials Conference, Z5, Vol. Z5, pp. 54-55, June 2002.
• M. Watanabe, Y. Iketani, M. Asada. Epitaxial Growth and Electrical Characteristics of CaF₂/Si/CaF₂ Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate, Jpn. J. Appl. Phys., Vol. 39, No. 10A, pp. L964-L967, Oct. 2000.
• M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki. CaF₂/CdF₂ Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio, Jpn. J. Appl. Phys., Vol. 39, No. 7B, pp. L716-L719, July 2000.
• M. Watanabe, Y. Maeda, S. Okano. Epitaxial Growth and Ultraviolet Photoluminescence of CaF₂/ZnO/CaF₂ Heterostructures on Si(111), Jpn. J. Appl. Phys., Vol. 39, No. 6A, pp. L500-L502, June 2000.
• T. Maruyama, N. Nakamura, M. Watanabe. Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF₂ on Si(111) Substrate Prepared by Rapid Thermal Annealling, Jpn. J. Appl. Phys., Vol. 39, No. 4B, pp. 1996-2000, Apr. 2000.
• T. Maruyama, N. Nakamura, M. Watanabe. Visible electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF₂/Si(111) with Rapid Thermal Anneal, Jpn. J. Appl. Phys., Vol. 38, No. 8B, pp. L904-L906, Aug. 1999.
• M. Tsutsui, M. Watanabe, M. Asada. Resonant tunneling diodes in Si/CaF₂ heterostructures grown by molecular beam epitaxy, Jpn. J. Appl. Phys., Vol. 38, No. 8B, pp. L920-L922, Aug. 1999.
• M. Watanabe, Y. Aoki, W. Saitoh, M. Tsuganezawa. Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy, Jpn. J. Appl. Phys., Vol. 38, No. 2A, pp. L116-L118, Feb. 1999.
• M. Watanabe, T. Maruyama, S. Ikeda. Light emission from Si nanocrystals embedded in CaF₂ epilayers on Si(111): effect of rapid thermal annealing, J. Luminescence, Vol. 80, No. 253, pp. 253-256, 1999.
• M. Watanabe, W. Saitoh, Y. Aoki, J. Nishiyama. Epitaxial growth of nanometer-thick CaF₂/CdF₂ heterostructures using partially ionized beam epitaxy, Solid-State Electron., Vol. 42, No. 7-8, pp. 1627-1630, July 1998.
• M. Watanabe, T. Matsunuma, T. Matsunuma, T. Maruyama, Y. Maeda. Electroluminescence of nanocrystal Si embedded in singel-crystal CaF2/Si, Vol. 37, No. 5B, pp. L591-L593, May 1998.
• M. Watanabe, T. Matsunuma, T. Maruyama, Y. Maeda. Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF₂/Si(111), Jpn. J. Appl. Phys., Vol. 37, No. 5B, pp. L591-L593, May 1998.
• MASAHIRO WATANABE, W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Asada. Reduction of Electrical Resistance of Nanometer-Thick CoSi₂ Film on CaF₂ by pseudomorphic growth of CaF₂ on Si(111), Jpn. J. Appl. Phys., Vol. 36, No. 7A, pp. 4470-4471, July 1997.  Official location  
• MASAHIRO WATANABE, H. Hongo, T. Hattori, Y. Miyamoto, K. Furuya, T. Matsunuma, M. Asada. Seventy nm Pitch Patternings on CaF₂ by e-beam Exposure: An Inorganic Resist and a Contamination Resist, Jpn. J. Appl. Phys., Vol. 35, No. 12A, pp. 6342-6343, Dec. 1996.
• M. Watanabe, F. Iizuka, M. Asada. Visible Light Emission from Nanocrystalline Silicon Embedded in CaF₂ Layers on Si(111), IEICE Trans., Vol. E79-C, No. 11, pp. 1562-1567, Nov. 1996.
• MASAHIRO WATANABE, Y. Miyamoto, K, T. Maruyama, M. Asada. Detection of hot electron current with scanning hot electron microscopy, Appl. Phys. Lett, Vol. 69, No. 15, pp. 2196-2198, Oct. 1996.
• W. Saitoh, K. Yamazaki, M. Asada, M. Watanabe. Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon, Jpn. J. Appl. Phys., Vol. 35, No. 9A, pp. L1104-L1106, Sept. 1996.
• T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe, M. Asada. Transfer efficiency of hot electrons in a metal(CoSi₂)/ insulator(CaF₂) quantum interference transistor, Surface science, Vol. 361/362, pp. 209-212, 1996.
• MASAHIRO WATANABE, MASAHIRO ASADA. Transfer Efficiency of Hot Electron in a Metal (CoSi₂)/Insulator(CaF₂)Quantum Interference Transistor, Surface science, Vol. 361, No. 362, pp. 209-212, 1996.
• T. Suemasu, Y. Kohno, W. Saitoh, M.Watanabe, M. Asada. Theoretical and measured characteristics of metal(CoSi₂)/ Insulator(CaF₂) resonant tunneling transistors and the influence of parasitic elements, IEEE Trans. Electron Devices, Vol. 42, No. 12, pp. 2203-2210, Dec. 1995.
• MASAHIRO WATANABE, W. Saitoh, T. Suemasu, Y. Kohno, M. Asada. Metal(CoSi₂)/insulator(CaF₂) hot electron transistor fabricated by electron-beam lithography on a Si substrate, Jpn. J. Appl. Phys, Vol. 34, No. 10A, pp. 1254-1256, Oct. 1995.
• MASAHIRO WATANABE, M. Watanabe, F. Iizuka, M. Asada. Formation of silicon and cobalt silicide nanoparticles in CaF₂, Jpn. J. Appl. Phys, Vol. 34, No. 8B, pp. 4380-4383, Aug. 1995.
• W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada. Multiple negative differential resistance due to quantum interference of Hot electron waves in metal(CoSi₂)/insulator(CaF₂) heterostructures and influence of parasitic elements, Jpn. J. Appl. Phys, Vol. 34, No. 8B, pp. 4481-4484, Aug. 1995.
• MASAHIRO WATANABE, T. Suemasu, Y. Kohno, W. Saitoh, N. Suzuki, M. Asada. Quantum interference of electron wave in metal(CoSi₂)/ insulator(CaF₂) resonant tunneling hot electron transistor structure, Jpn. J. Appl. Phys., Vol. 33, No. 12B, pp. L1762-L1765, Dec. 1994.
• MASAHIRO WATANABE, T. Suemasu, Y.Kohno, N.Suzuki, M.Asada. Different Characteristics of Metal (CoSi₂)/ Insulator(CaF₂) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer, IEICE Trans., Vol. E77-C, No. 9, pp. 1450-1454, Sept. 1994.
• MASAHIRO WATANABE, T. Suemasu, J. Suzuki, Y. Kohno, M. Asada, N. Suzuki. Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling Diode, Jpn. J. Appl. Phys., Vol. 33, No. 1A, pp. 57-65, Jan. 1994.
• MASAHIRO WATANABE, N. Suzuki, M. Asada. Reflection High-Energy Electron Diffraction Oscillation during CaF₂ growth on Si(111) by Partially Ionized-Beam-Epitaxy, Jpn. J. Appl. Phys., Vol. 32, No. 2, pp. 940-941, Feb. 1993.
• MASAHIRO WATANABE, T. Suemasu, S. Muratake, M. Asada. Negative Differential Resistance of Metal (CoSi₂)/Insulator(CaF₂) Triple-Barrier Resonant Tunneling Diode, Applied Physics Letters, Vol. 62, No. 3, pp. 300-302, Jan. 1993.
• T. Suemasu, M. Watanabe, M. Asada, N. Suzuki. Room Temperature Negative Differential Resistance of Metal (CoSi₂)/ Insulator(CaF₂) Resonant Tunneling Diode, Electron. Lett., Vol. 28, No. 15, pp. 1432-1433, July 1992.
• S. Muratake, M. Watanabe, T. Suemasu, M. Asada. Transistor Action of Metal (CoSi₂)/ Insulator (CaF₂) Hot Electron Transistor Structure, Electron. Lett., Vol. 28, No. 11, pp. 1002-1003, May 1992.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, S. Arai. Epitaxial Growth of Metal (CoSi₂)/ Insulator(CaF₂) Nanometer-Thick Layered Structure on Si(111), Jpn. J. Appl. Phys., Vol. 31, No. 2A, pp. L116-L118, Feb. 1992.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, S. Arai. Epitaxial Growth and Electrical Conductance of Metal (CoSi₂)/ Insulator (CaF₂) Nanometer-Thick Layered Structure on Si(111), J. Electron. Mater., Vol. 21, No. 8, pp. 783-789, Jan. 1992.
• S. Muratake, M. Watanabe, T. Suemasu, M. Asada. Transistor Action of Metal(CoSi₂)/Insulator(CaF₂)Hot Electron Transistor Structure, Electronics Letters, Vol. 28, No. 11, pp. 1002, 1992.
• T. Suemasu, M. Watanabe, M. Asada, N. Suzuki. Room Temperature Negative Differential Resistance of Metal(CoSi₂)/Insulator(CaF₂)Resonant Tunneling Diode, Electronics Letters, Vol. 28, No. 15, pp. 1432, 1992.
• MASAHIRO WATANABE, MASAHIRO ASADA. Epitaxial Growth Meal (CoSi₂)/Insulator (CaF₂) Nanometer-Thick Layered Structure on Si (111), Japanese Journal of Applied Physics, Vol. 31, No. 2A, pp. L116, 1992.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, SHIGEHISA ARAI. Epitaxial Growth and Electrical Conductance of Metal(CoSi₂)/Insulator(CaF₂)Nanometer-Thick Layered Structure on Si(111), Jounal of Electronic Materials, Vol. 21, No. 8, pp. 783, 1992.
• T. Sakaguchi, M. Watanabe, M. Asada. Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure, IEICE Trans. Electron., Vol. E74-C, No. 10, pp. 3326-3333, Oct. 1991.
• M. Watanabe, H. Muguruma, M. Asada, S. Arai. Low temperature (～420°C) epitaxial growth of CaF₂/Si(111) by Ionized-Cluster-Beam technique, Jpn. J. Appl. Phys., Vol. 29, No. 9, pp. 1803-1804, Sept. 1990.

Book

• MASAHIRO WATANABE. 電子情報工学ニューコース16 プログラミング概論, 電子情報工学ニューコース １６ プログラミング概論, 株式会社 培風館, Jan. 2010.

International Conference (Reviewed)

• Masahiro Watanabe. TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices, 2021 IEEE 14th International Conference on ASIC (ASICON 2021), Proceedings of the 2021 IEEE 14th International Conference on ASIC (ASICON 2021), Oct. 2021.
• Gensai Tei, Kenta Kitamura, Long Liu, Yohei Koyanagi, Daiki Sugawara, MASAHIRO WATANABE. Proposal and Analysis of Si/CaF2 Distributed Feedback Waveguide for near- and mid- infrared applications, 26th MICROOPTICS CONFERENCE (MOC2021), Sept. 2021.  Official location  
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices, IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), pp. 217-219, Apr. 2021.
• Gensai Tei, Liu Long, Yohei Koyanagi, Masahiro Watanabe. Room Temperature Near Infrared Electroluminescence of Si/CaF₂ Quantum Cascade Laser Structures grown on SOI Substrate, The 2020 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, pp. 301-302, Sept. 2020.
• Yoshiro Kumagai, Satoshi Fukuyama, Hiroki Tonegawa, Kizashi Mikami, Kodai Hirose, Kanta Tomizawa, Keisuke Ichikawa, Masahiro Watanabe. Negative Differential Resistance in CaF₂/Si Double Barrier Resonant Tunneling Diodes via Plasma Etching Mesa Isolation process, 32nd International Microprocesses and Nanotechnology Conference (MNC2019), The Japan Society of Applied Physics, Oct. 2019.
• T. Hiramoto, T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash. Switching of 3300V Scaled IGBT by 5V Gate Drive, ASICON (International Conference on ASIC), Oct. 2019.
• Long Liu, Soichiro Ono, Gensai Tei, Masahiro Watanabe. Design, fabrication, and evaluation of waveguide structure for Si/CaF₂ quantum-well intersubband transition lasers, The 2019 International Conference on Solid State Devices and Materials, Sept. 2019.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramo. 3300V Scaled IGBTs Driven by 5V Gate Voltag, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto. Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss, International Electron Devices Meeting (IEDM2018), Dec. 2018.
• Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigyo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Sinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately, 44th European Solid-State Circuits Conference (ESSDERC2018), Sept. 2018.
• Hiroki Tonegawa, Yoshiro Kumagai, Satoshi Fukuyama, Koudai Hirose, MASAHIRO WATANABE. Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si, The 2018 International Conference on Solid State Devices and Materials, Sept. 2018.
• K. Kakushima, T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai. New methodology for evaluating minority carrier lifetime for process assessment, Symp. On VLSI Technology (VLSI2018), June 2018.
• J. Denda, K. Suda, Y. Kuwata, M. Watanabe. Pulsed operation of resistance switching memory of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures, The 2013 International Conference on Solid State Devices and Materials, A-8-4, 588-589, Sept. 2013.
• M. Segawa, T. Ohci, Y. Koshita, K. Suda, M. Watanabe. Near Infrared (λ～1.5μm) Room Temperature Electroluminescence from Si/CaF₂ Intersubband Transition Laser Structures Grown on Silicon-on-Insulator Substrate, 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures, Matsue, Japan, July, 22-26, 2013, Th3-5, 52, July 2013.
• J. Denda, K. Uryu, M. Watanabe. Resistance switching memory characteristics of Si/CaF₂/CdF₂ quantum-well structures grown on metal (CoSi₂) Layer, The 2012 International Conference on Solid State Devices and Materials, PS-9-6, 310-311, Sept. 2012.
• Masahiro Watanabe, Kazuya Uryu. Retention characteristics of resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures, The 2011 International Conference on Solid State Devices and Materials, P-9-14, 350-351, Sept. 2011.
• M. Watanabe, H. Oogi. Fabrication of p-i-n structure using epitaxial silicon/CaF₂ quantum-dot superlattice, 3rd International Symposium on Innovative Solar Cells, PA-2, 126, Oct. 2010.
• Masahiro Watanabe, Yuhkou Nakashouji, Kazuya Tsuchiya. Switching voltage reduction of resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures, The 2010 International Conference on Solid State Devices and Materials, F-5-2, 792-793, Sept. 2010.
• M. Watanabe, R. Hirasawa, Y. Nakashouji. Resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures, The 2009 International Conference on Solid State Devices and Materials, K-2-6, 284-285, Oct. 2009.
• M. Watanabe, H. Oogi. Enhancement of Multiexciton Generation using Epitaxial Silicon/Fluoride Quantum-dot Structures, International Symposium on Innovative Solar Cells 2009, T-2, 172, Mar. 2009.
• M. Watanabe, T. Wada. Fabrication and Characterization of CdF₂/CaF₂ Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures, The 2008 International Conference on Solid State Devices and Materials, H-9-3, 1090-1091, Sept. 2008.
• Shunsuke Kajiura, Masahiro Watanabe. Proposal and analysis of quantum cascade lasers using Si/CaF₂/CdF₂ hybrid quantum well structures, International Nano-Optoelectronics Workshop (iNOW 2008), 3-P17, 269-270, Aug. 2008.
• Ryo Hirasawa, Masahiro Watanabe. Novel Resistivity Random Access Memory (ReRAM) based on tunneling probability modulation using Si/CaF₂/CdF₂ quantum-well structures, International Nano-Optoelectronics Workshop (iNOW 2008), 4-P22, 339-340, Aug. 2008.
• M. Watanabe, T. Kanazawa, M. Asada. Transmission Electron Microscopy Analysis of CaF₂/CdF₂/CaF₂ Resonant Tunneling Diode Structures grown on Si(100) Substrate, The 34th International Symposium on Compound Semiconductors (ISCS2007), Vol. TuD P8, pp. 222, Oct. 2007.
• H. Sano, K. Jinen, S. Kodaira, K. Uchida, M. Kumei, Y. Fujihisa, M. Watanabe, M. Asada. Mid-infrared (～4μm) Electroluminescence from CdF₂/CaF₂ Intersubband transition structures grown on Si(111) substrate, 15th International Conference on Nonequilibrium carrier Dynamics in Semiconductors (HCIS15), Vol. MoP-31, pp. 47, July 2007.
• T. Kanazawa, R. Fujii, T. Wada, Y. Suzuki, M. Watanabe, M. Asada. Control of NDR Characteristics of CdF₂/CaF₂ RTDs Using Nano-Area Local Growth on Si(100) Substrates, 2006 International Microprocesses and Nanotechnology Conference, Vol. 27B-11-7, pp. 410-411, Oct. 2006.
• K. Jinen, T. Kikuchi, M. Watanabe, M. Asada. Near-infrared Electroluminescence from Multilayered CdF₂/CaF₂ Quantum Heterostructure Grown on Trench-Patterned Si(111) Substrate, 3rd IEEE International Conference of GroupIV Photonics, Vol. P29, pp. 128-130, Sept. 2006.
• T. Kanazawa, A. Morosawa, M. Watanabe, M. Asada. High peak-to-valley current ratio of CdF₂/CaF₂ resonant tunneling diode grown on Si(100) substrates, 2005 International conference on Solid State Devices and Materials, Vol. G-1-7, pp. 162-163, Sept. 2005.
• K. Jinen, T. Kikuchi, M. Watanabe, M. Asada. Room temperature electroluminescence of CdF₂/CaF₂ intersubband transition laser structures grown on Si substrate, 2005 International conference on Solid State Devices and Materials, Vol. G-4-3, pp. 412-413, Sept. 2005.
• Y. Niiyama, T. Murata, M. Watanabe. Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures, 12th International Conference on II-VI Compounds, Vol. Tue-P-35, pp. 177, Sept. 2005.
• M. Watanabe, T. Kanazawa, K. Jinen, M. Asada. Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate, 2004 Silicon Nanoelectronics Workshop, 2004 Silicon Nanoelectronics Workshop,9-20, Vol. 9-20, pp. 145-146, June 2004.
• Y. Niiyama, T. Yokoyama, M. Watanabe. Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate, 11th International Conference on II-VI compounds, We-1.3, Sept. 2003.
• M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, M. Asada. Memory Effect of CdF₂/CaF₂ Resonant Tunneling Diode grown on p-type Silicon Substrate, The 11th International Conference on Modulated Semiconductor Structures -MSS11-, PC47, pp. 454-455, July 2003.
• M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, M. Asada. Structure Dependence of Negative Differential Resistance Characteristics of CdF₂/CaF₂ Resonant Tunneling Diode grown by Local Epitaxy on Silicon, 2003 Silicon Nanoelectronics Workshop, 2003 Silicon Nanoelectronics Workshop, 8-07, Vol. 8-07, pp. 106-107, June 2003.
• Y. Niiyama, T. Yokoyama, M. Watanabe. Crystal Growth of High-Mg-Content BeMgZnSe Lattice Matched to GaP(001) Substrate Using BeZnSe Buffer Layer, First Asia-Pacific Workshop on Widegap Semiconductors, First Asia-Pacific Workshop on Widegap Semiconductors, P118, Vol. P118, pp. 302-303, Mar. 2003.
• M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, M. Asada. Systematic variation of negative differential resistance characteristics of CdF₂/CaF₂ Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy, The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3, Vol. Tu4-3, pp. 103-106, Sept. 2002.
• M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, M. Asada. Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy, 26th International Conference on the Physics of Semiconductors, 26th International Conference on the Physics of Semiconductors, P157, Vol. P157, pp. 219, July 2002.
• Masahiro Watanabe, MASAHIRO ASADA. CaF₂/CdF₂ Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate (Invited), Frontier Science Research Conference, Science and Technology of Silicon Materials, Frontier Science Research Conference, Science and Technology of Silicon Materials, S-II, La Jolla/CA, U.S.A., Vol. S-II, Aug. 2001.
• Masahiro Watanabe, Naoto Sakamaki, Tatsuya Ishikawa. Fine-Area Epitaxy of CdF₂/CaF₂ Resonant Tunneling Diode on Si, the First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '01 (QNN '01), the First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '01 (QNN '01), TuP-29, Tsukuba, Japan, Vol. TuP-29, pp. 185-186, July 2001.
• Takeo Maruyama, Naoto Nakamura, Masahiro Watanabe. Epitaxial growth of BeZnSe on CaF₂/Si(111) substrate, 43rd 2001 Electronic Materials Conference, 43rd 2001 Electronic Materials Conference, Y3, Notre Dame, U.S.A., Vol. Y3, pp. 55, June 2001.
• Masahiro Watanabe, Naoto Sakamaki, Tatsuya Ishikawa, Daisuke Okamoto. Selective growth of CdF₂/CaF₂ resonant tunneling diode nanostructure on Si, 43rd 2001 Electronic Materials Conference, 43rd 2001 Electronic Materials Conference, Y4, Notre Dame, U.S.A., Vol. Y4, pp. 55-56, June 2001.
• Masahiro Watanabe, Naoto Sakamaki, Tatsuya Ishikawa. Room Temperature Negative Differential Resistance with High Peak-to-Valley Crrent Ratio of CdF₂/CaF₂ Resonant Tunneling Diode on Silicon, Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01), Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01), WP-30, Nara, Japan, Vol. WP-30, pp. 244-247, May 2001.
• Masahiro Watanabe, Naoto Sakamaki, Tatsuya Ishikawa. Feasibility study of CdF₂/CaF₂ intersubband transition lasers, The 4th Pacific Rim Conference on Lasers and Electro-Optics, The 4th Pacific Rim Conference on Lasers and Electro-Optics, WC1-5, Chiba Japan., Vol. II, No. WC1-5, pp. 40, 2001.
• M. Watanabe, Y. Iketani, M. Asada. Characteristics of Epitaxial Si/CaF₂ Resonant Tunneling Diodes Grown on Si(111) 1° off Substrate, 2000 IEEE Silicon Nanoelectronics Workshop, 5-6, 63-64, June 2000.
• M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki. Resonant Tunneling Characteristics of CdF₂/CaF₂ Heterostructures Grown on Silicon, 2000 IEEE Silicon Nanoelectronics Workshop, 5-4, 57-58, June 2000.
• M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki. Room Temperature Negative Differential Resistance of CdF₂-CaF₂ Resonant Tunneling Diode on Si(111), 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, 4.2, 73-77, June 2000.
• M. Watanabe, T. Funayama, T. Teraji, N. Sakamaki. Negative Differential Resistance with Peak to Valley Ratio Greater Than 100,000 of Double Barrier CdF₂/CaF₂ Resonant Tunneling Diode on Si(111), 42nd Electronic Materials Conference, K7, 23, June 2000.
• T. Maruyama, N. Nakamura, M. Watanabe. Visible Electroluninescence from Silicon Nanocrystals Embeded in CaF₂ Epilayers on Si(111) with Rapid Thermal Anneal, The 1999 International Conference on Solid State Devices and Materials, D-11-1, 426-427, Sept. 1999.
• M. Watanabe, Y. Maeda, S. Okano. Epitaxial growth and UV luminescence of CaF₂/ZnO/CaF₂ heterostructures on Si(111), 41st Electronic Materials Conference, T5, 51, June 1999.
• M. Watanabe, Y. Maeda, A. Yamada. Epitaxial growth of nanocrystal ZnO on CaF₂/Si(111), 1998 Materials Research Society Fall meeting, D4.8, 84, Oct. 1998.
• M. Watanabe, Y. Aoki, W. Saitoh, M. Tsuganezawa. Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy, 40th Electronic Materials Conference, G9, 13, June 1998.
• M. Watanabe, T. Maruyama, S. Ikeda. Light Emission from Nanocrystal Si Embedded in CaF₂ Epilayers on Si(111): Effect of Rapid Thermal Annealing, E-MRS 1998 Spring Meeting, B-II/P.10, B-29, June 1998.
• M. Watanabe, W. Saitoh, Y. Aoki, J. Nishiyama. Epitaxial growth of nanometer-thick CaF₂/CdF₂ heterostructure using partially ionized beam epitaxy, International Workshop on NANO-PHYSICS AND ELECTRONICS (NPE’97), X09, 156-157, Sept. 1997.
• W. Saitoh, Y. Aoki, J. Nishiyama, M. Watanabe, M. Asada. Epitaxial growth of Si/CdF₂/CaF₂ heterostructures on Si substrate, 39th Electronic Materials Conference, U9, 48, June 1997.
• M. Watanabe, T. Matsunuma, T. Maruyama, M. Asada. Electroluminescence from silicon nanoparticles embedded in CaF₂ on Si(111), Phantoms Strategic Domain Meetings (PHASDOM97), D2.23c, Mar. 1997.
• M. Asada, M. Watanabe, W. Saitoh, K. Mori, Y. Kohno. Quantum-Effect Electron Devices Using Metal/Insulator Nanostructures (Invited), the 1996 International Conference on Solid State Devices and Materials, Sympo. IV-1, 169-171, Aug. 1996.
• F. Vazquez, D. Kobayashi, I. Kobayashi, K. Furuya, Y. Miyamoto, T. Maruyama, M. Watanabe, M. Asada. Experimental Evidence of Hot Electron Detection with Scanning Hot Electron Microscopy (SHEM), the 1996 International Conference on Solid State Devices and Materials, Sympo. IV-7, 187-189, Aug. 1996.
• K. Mori, W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada. Room Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi₂)/Insulator (CaF₂) Quantum Interference Transistor Structure, Third International Symposium on “New Phenomena in Mesoscopic Structures”, H4, 188-190, Dec. 1995.
• M. Watanabe, T. Suemasu, W. Saitoh, M. Asada. Metal(CoSi₂)/Insulator(CaF₂) Heterostructure Quantum Effect Device (Invited Paper), IEEE Lasers and Electro-Optics Society 1995 annual meeting, (Invited) OMP 2.3, 89-90, Oct. 1995.
• W. Saitoh, T. Suemasu, Y. Kohno, M.Watanabe, M. Asada. Metal(CoSi₂)/Insulator(CaF₂) Hot Electron Transistor usig Electron-Beam Lithography on Si Substrate, the 25th European Solid State Device Recearch Conference, P1.7, Sept. 1995.
• T. Suemasu, W. Saitoh, Y. Kohno, M.Watanabe, M. Asada. Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi₂)/Insulator (CaF₂) Heterostructure, International Conference on the Electronic Properties of Two-Dimensional Systems, PA7, 169-170, Aug. 1995.
• M. Watanabe, F. Iizuka, M. Asada. Photoluminescence Spectra of Silicon Nanometer Grains (<10nm) Embedded in CaF₂Thin Films on Si(111), 1995 Electronic Materials Conference, D3, A6, June 1995.
• T. Suemasu, Y. Kohno, W. Saitoh, K. Mori, M.Watanabe, M. Asada. Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling and Interference Transistors Grown on Si Substrate, International Workshop on Quantum Functional Devices, S-11, May 1995.
• M. Watanabe, F. Iizuka, M. Asada. Formation of Silicon and Cobalt Silicide Nanometer Fine Particles (<10nm) in CaF₂, International Workshop on Mesoscopic Physics and Electronics, I22, 126-127, Mar. 1995.
• T. Suemasu, W. Saitoh, Y. Kohno, M.Watanabe, M. Asada. Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi₂)/ Insulator(CaF₂) Heterostructure, International Workshop on Mesoscopic Physics and Electronics, H2, 86-87, Mar. 1995.
• M. Asada, M. Watanabe, T. Suemasu, Y. Kohno. Metal(CoSi₂)/Insulator(CaF₂) resonant tunneling diodes and transistors, National Symposium of American Vacuum Society, (Invited) EM-MoA9, Oct. 1994.
• T. Suemasu, Y. Kohno, M. Watanabe, M. Asada, N. Suzuki. Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling Transistor, International Electron Devices Meeting (IEDM '93), 21.5, 553-556, Dec. 1993.
• M. Watanabe, T. Suemasu, J. Suzuki, Y. Kohno, M. Asada, N. Suzuki. CoSi₂/CaF₂ Resonant Tunneling Diode on Si, Materials Research Society 1993 Fall Meeting (MRS '93), (Invited) D1.4, 135, Nov. 1993.
• M. Asada, M. Watanabe, T. Suemasu, N. Suzuki, Y. Kohno. Metal/Insulator Heterostructure Quantum Devices on Si Substrate, International Conference on Solid State Devices and Materials (SSDM'93), D-5-1, 805-807, Aug. 1993.
• T. Suemasu, M. Watanabe, S. Muratake, M. Asada, N. Suzuki. Negative Differential Resistance in Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling Diode, 50th Device Research Conference (DRC'92), IIB-4, June 1992.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, S. Arai. Epitaxial Growth of CoSi₂/CaF₂ heterostructures on Si(111) by Ionized-Cluster-Beam Technique, Electronic Materials Conference (EMC'91), H2, p. 21-22, June 1991.

Domestic Conference (Not reviewed / Unknown)

• Maiko Hoshino, Ryoya Usami, Kanta Murakami, MASAHIRO WATANABE. Room Temperature Pulse Response Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure, The 84th Autumn Meeting of The Japan Society of Applied Physics, 12-077, Sept. 2023.
• Yuta Sugiyama, Hyuma Suzuki, Zhiyuan Fan, MASAHIRO WATANABE. Active layer desings for near-infrared wavelength quantum cascade lasers using CaF2/Si heterostructure for electric field reduction, The 84th Autumn Meeting of The Japan Society of Applied Physics, 03-332, Sept. 2023.
• Kanta Murakami, Ryoya Usami, Maiko Hoshino, MASAHIRO WATANABE. Improvement of current density of Si/CaF₂ n-type triple-barrier resonant tunneling diode, The 84th Autumn Meeting of The Japan Society of Applied Physics, 12-220, Sept. 2023.
• Ryoya Usami, Maiko Hoshino, Kanta Murakami, MASAHIRO WATANABE. Valley current reduction of p-type Si/CaF₂ double-barrier resonant tunneling diode using embedded structure in CaF₂, The 84th Autumn Meeting of The Japan Society of Applied Physics, 12-221, Sept. 2023.
• Maiko Hoshino, Akinori Ito, Yusuke Suzuki, Ryoya Usami, Kanta Murakami, Gensai Tei, MASAHIRO WATANABE. Room Temperature Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure, The 70th The Japan Society of Applied Physics Spring Meeting, Mar. 2023.  Official location  
• Akinori Ito, Yusuke Suzuki, Maiko Hoshino, Ryoya Usami, Kanta Murakami, Masahiro Watanabe. Leakage current reduction of Si/CaF₂ p-type Resonant Tunneling Diode using embedded structure in CaF₂, The 83rd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 12-253, Sept. 2022.
• Yusuke Suzuki, Akinori Ito, Masataka Saito, Maiko Hoshino, Ryoya Usami, Kanta Murakami, Masahiro Watanabe. Room temperature negative differential resistance of Si/CaF₂ double-barrier resonant tunneling diodes grown by surfactant epitaxy, The 83rd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 12-254, Sept. 2022.
• Gensai Tei, Long Liu, Masataka Saito, Koyo Matsuura, Yuta Sugiyama, Masahiro Watanabe. Aanalysis of 1.6 µm wavelength quantum cascade lasers using Si/CaF₂ heterostructures, The 83rd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 03-477, Sept. 2022.
• Masataka Saito, Gensai Tei, Long Liu, Yohei Koyanagi, Daiki Sugawara, Masahiro Watanabe. Effect of As irradiation on the surface roughness of Si thin films grown on CaF₂, The 69th The Japan Society of Applied Physics Spring Meeting, 第69回応用物理学会春季学術講演会 講演予稿集 (青山学院大学 相模原キャンパス ＆ オンライン), p. 12-202, Mar. 2022.
• Daiki Sugawara, Long Liu, Gensai Tei, Yohei Koyanagi, Kenta Kitamura, MASAHIRO WATANABE. Evaluation of valence band difference (∆Ev) at Si/CaF₂ interface using p-type single barrier tunneling diodes and double barrier resonant tunneling diodes, The 69th The Japan Society of Applied Physics Spring Meeting, 第69回応用物理学会春季学術講演会 講演予稿集 (青山学院大学 相模原キャンパス ＆ オンライン), p. 12-046, Mar. 2022.
• Kenta Kitamura, Gensai Tei, Long Liu, Yohei Koyanagi, Daiki Sugawara, MASAHIRO WATANABE. Design and fabrication of distributed feedback waveguide using Si/CaF2 heterostructures, The 82nd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 第82回応用物理学会秋季学術講演会 講演予稿集 (2021 ハイブリッド開催（名城大学 天白キャンパス ＆ オンライン）), p. 12-309, 2022.
• Daiki Sugawara, Long Liu, Gensai Tei, Yohei Koyanagi, Kenta Kitamura, MASAHIRO WATANABE. Evaluation of valence band difference (ΔEV) at Si/CaF₂ interface using p-type single barrier tunneling diodes, The 82nd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 第82回応用物理学会秋季学術講演会 講演予稿集 (2021 ハイブリッド開催（名城大学 天白キャンパス ＆ オンライン）), p. 12-311, Sept. 2021.
• Honami Sato, Yoshiro Kumagai, Kanta Tomizawa, Takumi Kaneko, MASAHIRO WATANABE. Room Temperature Negative Differential Resistance of Si/CaF2 p-type Triple-barrier Resonant Tunneling Diodes, The 68th The Japan Society of Applied Physics Spring Meeting, 第68回応用物理学会春季学術講演会 講演予稿集 (2021 オンライン開催), p. 12-155, Mar. 2021.
• Youhei Koyanagi, Gensai Tei, Liu Long, Masahiro Watanabe. Analysis of near-infrared wavelength quantum cascade laser using CaF₂/Si heterostructures, The 81st The Japan Society of Applied Physics Autumn Meeting 2020, The Japan Society of Applied Physics, p. 12-015, Sept. 2020.
• Takumi Kaneko, Yoshiro Kumagai, Koudai Hirose, Hiroki Tonegawa, Kizashi Mikami, Kanta Tomizawa, Honami Sato, Masahiro Watanabe. Analysis of resistance switching characteristics of CaF₂/Si/CaF₂ quantum-well structures, The 67th The Japan Society of Applied Physics Spring Meeting, The Japan Society of Applied Physics, p. 11-140, Mar. 2020.
• Honami Sato, Yoshiro Kumagai, Kizashi Mikami, Hiroki Tonegawa, Koudai Hirose, Kanta Tomizawa, Takumi Kaneko, Masahiro Watanabe. Room Temperature Negative Differential Resistance of Si/CaF₂ p-type Triple-barrier Resonant Tunneling Diodes, The 67th The Japan Society of Applied Physics Spring Meeting, The Japan Society of Applied Physics, p. 11-139, Mar. 2020.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs, 電子情報通信学会 SDM(シリコン材料・デバイス)研究会, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 273, pp. 45-48, Nov. 2019.
• Kanta Tomizawa, Yoshiro Kumagai, Hiroki Tonegawa, Kizashi Mikami, Koudai Hirose, Takumi Kaneko, Honami Sato, Masahiro Watanabe. Room temperature negative differential resistance of CaF₂/Si/SiO₂ double-barrier resonant tunneling diodes, The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys., The Japan Society of Applied Physics, p. 12-341, Sept. 2019.
• Hiroki Tonegawa, Yoshiro Kumagai, Kizashi Mikami, Koudai Hirose, Kanta Tomizawa, Takumi Kaneko, Honami Sato, Masahiro Watanabe. Room temperature negative differential resistance of Si/CaF₂ triple-barrier resonant tunneling diodes with high peak current density, The 80th Autumn Meeting of The Jpn. Soc. Of Appl. Phys., The Japan Society of Applied Physics, p. 12-340, Sept. 2019.
• Gensai Tei, Long Liu, Yohei Koyanagi, Masahiro Watanabe. Fabrication process of near-infrared wavelength quantum cascade laser using CaF₂/Si heterostructures, The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys., The Japan Society of Applied Physics, p. 12-344, Sept. 2019.
• Koudai Hirose, Yoshiro Kumagai, Hiroki Tonegawa, Kanta Tomizawa, Takumi Kaneko, Honami Sato, Masahiro Watanabe. Room Temperature Negative Differential Resistance of Si/CaF₂ Bipolar Double-barrier Resonant Tunneling Diodes, The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys., The Japan Society of Applied Physics, p. 12-343, Sept. 2019.
• Kizashi Mikami, Yoshiro Kumagai, Koudai Hirose, Kanta Tomizawa, Hiroki Tonegawa, Takumi Kaneko, Honami Sato, Masahiro Watanabe. Room temperature negative differential resistance of p-type resonant tunneling diodes using atomically thin CaF₂/Si heterostructures, The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys., The Japan Society of Applied Physics, p. 12-342, Sept. 2019.
• 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, Kuniyuki KAKUSHIMA, Takuya Hoshii, 古川 和由, MASAHIRO WATANABE, 執行 直之, KAZUO TSUTSUI, HIROSHI IWAI, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通, 平本 俊郎. 5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス), 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 118, No. 429, pp. 39-44, Aug. 2019.
• Kizashi Mikami, Satoshi Fukuyama, Masahiro Watanabe. Room Temperature Negative Differential Resistance of Si/CaF₂ Double-barrier Resonant Tunneling Diodes, The 66th The Japan Society of Applied Physics Spring Meeting, 応用物理学会, p. 11-192, Mar. 2019.  Official location  
• Gensai Tei, Soichiro Ono, Liu Long, Masahiro Watanabe. Analysis of near-infrared wavelength quantum cascade laser using CaF₂/Si heterostructures, The 66th The Japan Society of Applied Physics Spring Meeting, 応用物理学会, p. 11-427, Mar. 2019.
• Kensuke Ichikawa, Hiroki Tonegawa, Koudai Hirose, Kizashi Mikami, Satoshi Fukuyama, Yoshiro Kumagai, Masahiro Watanabe. Theoretical analysis of multiple-barrier silicon/fluoride heterostructure resonant tunneling diodes with metal emitter, The 66th The Japan Society of Applied Physics Spring Meeting, 応用物理学会, p. 11-191, Mar. 2019.  Official location  
• Koudai Hirose, Satoshi Fukuyama, Yoshiro Kumagai, Hiroki Tonegawa, MASAHIRO WATANABE. Room Temperature Negative Differential Resistance of Si/CaF₂ Double-barrier Resonant Tunneling Diodes, The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys., p. 12-432, Sept. 2018.
• Satoshi Fukuyama, MASAHIRO WATANABE. Evaluation of current-voltage characteristics of single barrier tunneling diode using atomically-thin CaF₂/Si heterostructure, The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys., p. 12-433, Sept. 2018.
• Yoshiro Kumagai, Soichiro Ono, Koudai Hirose, Satoshi Fukuyama, Hiroki Tonegawa, MASAHIRO WATANABE. Room temperature negative differential resistance of CaF₂/Si/CaF₂ resonant-tunneling structures fabricated by dry etching, The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys., p. 12-434, Sept. 2018.
• Hiroki Tonegawa, MASAHIRO WATANABE. Room Temperature Negative Differential Resistance of Si/CaF₂ Triple-barrier Resonant Tunneling Diodes, The 65th The Japan Society of Applied Physics Spring Meeting, p. 12-195, Mar. 2018.
• Satoshi Fukuyama, MASAHIRO WATANABE. Evaluation of valence band offset of atomically-thin CaF₂/Si heterointerface, The 65th The Japan Society of Applied Physics Spring Meeting, p. 12-265, Mar. 2018.
• Soichiro Ono, Waseda Cloudy, Yusuke Saito, Hiroki Kondo, MASAHIRO WATANABE. Design and analysis of Si/CaF2 near-infrared intersubband transition lasers, The 65th The Japan Society of Applied Physics Spring Meeting, p. 12-430, Mar. 2018.
• Yusuke Saito, Hiroki Kondo, MASAHIRO WATANABE. Room temperature electroluminescence from CaF2 / Si quantum cascade structures, The 65th The Japan Society of Applied Physics Spring Meeting, p. 12-431, Mar. 2018.
• Yoshiro Kumagai, MASAHIRO WATANABE. Reactive ion etching of CaF2/Si heterostructure using CF4/O2 plasma, The 78th Autumn Meeting of The Jpn. Soc. of Appl. Phys., p. 12-436, Sept. 2017.
• Hiroki Kondo, Yusuke Saito, MASAHIRO WATANABE. Fabrication and evaluation of waveguide structure of Si/CaF2 quantum cascade lasers, The 78th Autumn Meeting of The Jpn. Soc. of Appl. Phys., Sept. 2017.
• Yusuke Saito, Naoyuki Tanabe, Hiroki Kondo, Masahiro Watanabe. Design of active layers of Si/CaF2 quantum cascade lasers considering material parameter modification of atomically thin films, The 64th The Japan Society of Applied Physics Spring Meeting, 第 64 回応用物理学会春季学術講演会 講演予稿集, Page 12-379, Mar. 2017.
• Hiroki Kondo, Yusuke Saito, Naoyuki Tanabe, Masahiro Watanabe. Design and analysis of Si/CaF2 quantum cascade lasers, The 64th The Japan Society of Applied Physics Spring Meeting, 第 64 回応用物理学会春季学術講演会 講演予稿集, Page 03-134, Mar. 2017.
• F. Sakurai, M. Watanabe. Room temperature resistance switching characteristics of Si/CaF₂ resonant-tunneling quantum-well structures grown on CoSi₂, The 77th Autumn Meeting of The Jpn. Soc. of Appl. Phys., Sept. 2016.
• N. Tanabe, T. Shimanaka, K. Suda, M. Watanabe. Room temperature negative differential resistance of CaF₂/Si/CaF₂ resonant tunneling diode, 電子情報通信学会（電子デバイス研究会）, 信学技報, vol.116, No. 158, ED2016-34, pp. 35-39, July 2016.
• N. Tanabe, M. Mochizuki, K. Suda, T. Shimanaka, M. Watanabe. Room temperature negative differential resistance of CaF₂/Si/CaF₂ resonant-tunneling structures, The 63rd The Japan Society of Applied Physics Spring Meeting, pp. 11-116, Mar. 2016.
• M. Mochizuki, K. Suda, M. Watanabe. Electroluminescence from CaF₂/Si quantum-well heterostructures, The 76th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 12-045, Sept. 2015.
• Y. Kuwata, K. Suda, M. Watanabe. Pulsed response of resistance switching devices using Si/CaF₂ resonant-tunneling structures, The 62nd The Japan Society of Applied Physics Spring Meeting, 12-300, Mar. 2015.
• K. Suda, Y. Kuwata, M. Watanabe. Analysis of resistance switching characteristics of resonant-tunneling quantum-well structures using CaF₂/CdF₂/CaF₂ heterostructure, The 62nd The Japan Society of Applied Physics Spring Meeting, 12-269, Mar. 2015.
• M. Mochizuki, H. Kaneko, K. Suda, M. Watanabe. Increase of electroluminescence from Si/CaF₂/CdF₂ intersubband transition laser structures using CdF₂ extraction layer, The 75th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 14-068, Sept. 2014.
• K. Suda, Y. Kuwata, M. Watanabe. Analysis of Current Voltage Characteristics of Si/CaF₂/CdF₂ RTD, The 75th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 14-067, Sept. 2014.
• Y. Koshita, K. Suda, Y. Kuwata, J. Denda, M. Watanabe. High-peak-current-density resistance switching characteristics of Si/CaF₂ resonant-tunneling quantum-well structures, The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-3, 14-070, Mar. 2014.
• Yuuya Kuwata, Keita Suda, Junya Denda, Yuuta Koshita, Masahiro WATANABE. Pulsed operation of resistance switching devices using Si/CaF₂ resonant tunneling structures grown on Si(111), The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-1, 14-068, Mar. 2014.
• K. Suda, J. Denda, Y. Kuwata, Y. Koshita, M. Watanabe. Tunneling current measurement of Al/CaF₂/Si MIS structures, The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-2, 14-069, Mar. 2014.
• S.Koike, M.Watanabe. Photovoltaic characteristics of p-i-n cell structures using CaF₂/Si quantum-dot superlattice, The 74nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 19p-A2-13, 16-024, Sept. 2013.
• Y. Koshita, K.Suda, Y.Kuwata, J.Denda, S. Koike, M.Segawa, M. Watanabe. Negative differential resistance of nc-Si/CaF₂ resonant tunneling diode structures, The 74nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 19p-P9-2, 14-066, Sept. 2013.
• J. Denda, K. Suda, Y. Kuwata, M. Watanabe. Pulsed operation of resistance switching memory of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures, The 74nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 19p-P9-3, 14-067, Sept. 2013.
• K. Suda, J. Denda, Y. Kuwata, M. Watanabe. Analysis of resistance switching devices using Si/CaF₂/CdF₂ quantum-well structures, The 74nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 19p-P9-4, 14-068, Sept. 2013.
• Y. Kuwata, K. Uryu, J. Denda, K. Suda, M. Watanabe. Fabrication of resistance switching devices using Si/CaF₂ resonant tunneling structures grown on Si(111), The 60th The Japan Society of Applied Physics Spring Meeting, 29a-PB6-7, 14-046, Mar. 2013.
• M. Segawa, T. Ochi, Y. Koshita, M. Watanabe. Room temperature near-infrared (λ～1.5μm) electroluminescence from Si/CaF₂ quantum cascade laser structures, The 60th The Japan Society of Applied Physics Spring Meeting, 28p-G5-15, 14-164, Mar. 2013.
• J. Denda, K. Uryu, K. Suda, M. Watanabe. Resistance switching characteristics of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures, The 60th The Japan Society of Applied Physics Spring Meeting, 29a-PB6-9, 14-048, Mar. 2013.
• MASAHIRO WATANABE. Retention characteristics of crosspoint resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on CoSi₂/Si(100), The 60th The Japan Society of Applied Physics Spring Meeting, 29a-PB6-8, 14-047, Mar. 2013.
• Y. Kurachi, M. Watanabe. Spectral sensitivity of ημτ product for CaF₂/Si quantum-dot structures, The 73nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 12a-F7-6, 16-006, Sept. 2012.
• T. Ochi, M. Watanabe. Room temperature near-infrared electroluminescence from Si/CaF₂ quantum cascade laser structures, The 73nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 12p-PA1-12, 14-083, Sept. 2012.
• J. Denda, K. Uryu, M. Watanabe. Resistance switching characteristics of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures grown on CoSi₂, The 73nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 12p-PA1-13, 14-084, Sept. 2012.
• K. Uryu, J. Denda, M. Watanabe. Fabrication of crosspoint resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on CoSi₂/Si(100), The 59th Spring Meeting, The Japan Society of Applied Physics and Related Societies, 18a-E1-7, 14-101, Mar. 2012.
• K. Uryu, M. Watanabe. Retention characteristics of resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on Si(111), The 72nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 31p-P16-14, 14-045, Aug. 2011.
• MASAHIRO WATANABE. Fabrication of p-i-n cell structures using CaF₂/Si quantum-dot superlattice, The 72nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 31a-ZH-5, 16-005, Aug. 2011.
• Y. Nakashouji, K. Uryu, M. Watanabe. Fabrication and characterization of resistance switching devices using fluoride based resonant tunneling structures grown on CoSi₂/Si(111), The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, 26a-KV-6, 14-070, Mar. 2011.
• Y. Nakashouji, K. Tsuchiya, M. Watanabe. Switching voltage reduction of resistance switching devices using silicon / fluoride resonant tunneling structures, The 71st Autumn Meeting of The Jpn. Soc. of Appl. Phys, 16a-NC-1, 14-064, Sept. 2010.
• H. Oogi, M. Watanabe. Photocurrent measurement of epitaxial CaF₂/Si quantum-dot structures, Nat. Conv. Rec. of the 57th Spring Meeting of The Jpn. Soc. of Appl. Phys, 20a-TG-10, 16-096, Mar. 2010.
• R. Hirasawa, Y. Nakasyouji, M. Watanabe. Characterization of resistance switching devices using silicon / fluoride resonant tunneling structures, Nat. Conv. Rec. of the 56th Spring Meeting of The Jpn. Soc. of Appl. Phys, 30a-ZB-5, 3, 1425, Mar. 2009.
• H. Oogi, M. Watanabe. Optical properties of epitaxial CaF₂/Si quantum-dot structures, Nat. Conv. Rec. of the 56th Spring Meeting of The Jpn. Soc. of Appl. Phys, 31p-TF-4, 2, 927, Mar. 2009.
• S. Kajiura, Y. Ashikawa, M. Watanabe. Near-infrared Electro-Luminescence of CaF₂/Si Heterostructures, Nat. Conv. Rec. of the 56th Spring Meeting of The Jpn. Soc. of Appl. Phys, 30p-ZB-2, 3, 1427, Mar. 2009.
• T. Wada, Y. Suzuki, R. Hirasawa, M. Watanabe. Fabrication of Three-Terminal Integrated Devices using CdF₂/CaF₂ Resonant Tunneling Gate Structure, Nat. Conv. Rec. of the 55th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-E-2, 3, 1461, Mar. 2008.
• Y. Fujihisa, M. Kumei, S. Kajiura, Y. Sasaki, M. Watanabe, M. Asada. Reduction of Leakage Current using Nano-area Local Epitaxy for CdF₂/CaF₂ Intersubband Transition Lasers on Si Substrate, The 68th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 5a-N-5, 3, 1404, Sept. 2007.
• H. Sano, K. Jinen, K. Uchida, S. Kodaira, M. Kumei. Y. Fujihisa, M. Watanabe, M. Asada, MASAHIRO ASADA. Mid-infrared (～4μm) Electroluminescence from CdF₂/CaF₂ Quantum Heterostructure grown on Si(111) substrate, Nat. Conv. Rec. of the 54th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 29p-T-19, 3, 1473, Mar. 2007.
• K. Uchida, K. Jinen, S. Kodaira, M. Kumei, H. Sano, M. Watanabe, M. Asada. Fabrication of Plasmon Waveguide with SOI structure for Fluoride-Based Intersubband Transition Lasers, The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-16, 3, 1267, Aug. 2006.
• T. Kanazawa, R. Fujii, T. Wada, Y. Suzuki, M. Watanabe, M. Asada. I-V characteristics of CdF₂/CaF₂ resonant tunneling diodes on Si(100) substrate by nano-area local growth method, The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-14, 3, 1266, Aug. 2006.
• K. Jinen, K. Uchida, S. Kodaira, M. Kumei, H. Sano, M. Watanabe, M. Asada. Theoretical Analysis of Intersubband Transition Time in (CdF₂/CaF₂) Quantum Well Structure, The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-17, 3, 1267, Aug. 2006.
• S. Kodaira, K. Jinen, K. Uchida, M. Kumei, H. Sano, M. Watanabe, M. Asada. Atomic Step Control of Si Substrate Surface for Fluoride Based Intersubband Transition Lasers, The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-15, 3, 1267, Aug. 2006.
• T. Kanazawa, A. Morosawa, R. Fujii, T. Wada, M. Watanabe, M. Asada. Growth temperature dependence of CaF₂/CdF₂/CaF₂ quantum-well structures on Si(100) substrate, The 66th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 9a-W-5, 3, 1214, Sept. 2005.
• K. Jinen, T. Kikuchi, M. Watanabe, M. Asada. EL Characteristics of CdF₂/CaF₂ quantum heterostructures on Si substrate, The 66th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 9a-W-6, 3, 1214, Sept. 2005.
• A. Morosawa, T. Kanazawa, R. Fujii, T. Wada, M. Watanabe, M. Asada. Negative differential resistance characteristics of CdF₂/CaF₂ resonant tunneling diode grown by nanoarea local epitaxy, The 66th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 9a-W-7, 3, 1215, Sept. 2005.
• T. Kikuchi, K. Jinen, K. Uchida, S. Kodaira, M. Watanabe, M. Asada. Theoretical analysis of fluoride based intersubband transition lasers with plasmon waveguide, The 66th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 9a-W-8, 3, 1215, Sept. 2005.
• Y. Niiyama, T. Murata, M. Watanabe. Optically pumped ultraviolet lasing of BeMgZnSe compounds, The 52nd Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 31p-ZN-7, 1, 338, Mar. 2005.
• MASAHIRO WATANABE, Y. Niiyama, T. Murata. Measurement of refractive index of BeMgZnSe using spectroscopic ellipsometry, The 65th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 2a-ZQ-10, 1, 242, Sept. 2004.
• MASAHIRO WATANABE, Toru Kanazawa, 浅田雅弘. Growth temperature dependence of CdF₂/CaF₂ resonant tunneling diode structures on Si(100) substrate, The 65th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 2a-ZK-4, 3, 1223, Sept. 2004.
• K. Jinen, H. Murata, M. Watanabe, M. Asada. Near infrared EL measurement of CdF₂/CaF₂ quantum heterostructures on Si substrate, The 65th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 4a-ZK-6, 3, 1242, Sept. 2004.
• T. Murata, Y. Niiyama, M. Watanabe. Room temperature shortest wavelength (λ=329nm) photoluminescence of BeMgZnSe, The 65th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 2a-ZQ-9, 1, 242, Sept. 2004.
• S. Tamura, M. Watanabe, M. Asada. Room temperature negative differential resistance of CoSi₂/CaF₂ triple-barrier resonant tunneling diode grown by Nano-area Local Epitaxy, The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 30a-ZE-8, 3, 1548, Mar. 2004.
• T. Yokoyama, Y. Niiyama, T. Murata, M. Watanabe. Improvement of luminescence properties of BeZnSe-MBE on MEE buffer layer, The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29p-P12-13, 1, 327, Mar. 2004.
• T. Murata, Y. Niiyama, T. Yokoyama, M. Watanabe. Crystal growth using Be-Zn co-irradiation and optical properties of BeZnSe strained quantum well structurews, The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29p-P12-11, 1, 327, Mar. 2004.
• Y. Niiyama, T. Yokoyama, T. Murata, M. Watanabe. Design and production of BeMgZnSe based waveguide structures for optically pumping, The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29p-P12-12, 1, 327, Mar. 2004.
• K. Jinen, H. Murata, M. Watanabe, M. Asada. Theoretical Analysis of Fluoride Based Intersubband Transition Lasers using CoSi₂-Plasmon Waveguide, The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 30p-ZE-1, 3, 1549, Mar. 2004.
• Y. Niiyama, T. Yokoyama, T. Murata, T. Maruyama, M. Watanabe. Theoretical analysis of BeMgZnSe ultraviolet quantum well laser – cladding layer Mg content dependence of threshold current density –, The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-13, 1, 251, Aug. 2003.
• Y. Niiyama, T. Yokoyama, T. Murata, M. Watanabe. Temperature dependence of photoluminescence energy of BeMgZnSe, The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-12, 1, 251, Aug. 2003.
• T. Kanazawa, M. Matsuda, M. Watanabe, M. Asada. Structure dependence of negative differential resistance characteristics of CdF₂/CaF₂ resonant tunneling diode on Si(100) substrate, The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-ZF-14, 3, 1253, Aug. 2003.
• M. Matsuda, T. Kanazawa, M. Watanabe, M. Asada. Memory effect due to charge and discharge of CdF₂/CaF₂ resonant tunneling diode, The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-ZE-5, 3, 1469, Mar. 2003.
• T. Kanazawa, M. Matsuda, M. Watanabe, M. Asada. Fabrication and characterization of CdF₂/CaF₂ resonant tunneling diode on double step Si(100) 2°off substrate, The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-ZE-3, 3, 1469, Mar. 2003.
• K. Jinen, M. Watanabe, M. Asada. Analysis of CaF2 Based Heterostructure Intersubband Transition Lasers on SOI, The 50th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 28p-ZE-4, 3, 1462, Mar. 2003.
• M. Matsuda, T. Kanazawa, M. Watanabe, M. Asada. Quantum-well thickness dependence of NDR characteristics of CdF₂/CaF₂ resonant tunneling diode, The 63rd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 25p-P9-11, 3, 1203, Sept. 2002.
• Y. Niiyama, T. Maruyama, M. Watanabe. UV-Photoluminescence of BeMgZnSe-BeZnSe DH structure on GaP(100) substrate, The 63rd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 26p-YE-7, 1, 272, Sept. 2002.
• H. Fujioka, M. Tsutsui, T. Ishikawa, M. Watanabe, M. Asada. Fabrication of vertical MOSFET integrated with resonant tunneling diode, The 49th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 30a-H-8, 2, 893, Mar. 2002.
• Toru Kanazawa, M. Matsuda, T. Ishikawa, T. Kanazawa, M. Watanabe, M. Asada. Fabrication and characterization of CdF₂/CaF₂ resonant tunneling diode on Si(100) substrate, The 49th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 27p-YH-3, 3, 1374, Mar. 2002.
• N. Nakamura, T. Maruyama, Y. Niiyama, M. Watanabe. Epitaxial growth of BeMgZnSe on GaP(001), The 62nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 11a-P1-3, 1, 207, Sept. 2001.
• T. Maruyama, N. Nakamura, Y. Niiyama, M. Watanabe. UV photoluminescence from BeZnSe grown on GaP (001) substratre at room temperature, The 62nd Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 11a-P1-2, 1, 207, Sept. 2001.
• S. Okano, M. Suzuki, M. Watanabe. Inpurity control of eptaxial ZnO thin films grown on CaF₂/Si(111) by N, Ga codoping, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 31a-YL-3, 3, 1438, Mar. 2001.
• T. Maruyama, N. Nakamura, M. Watanabe. Epitaxial growth of BeZnSe on CaF₂/Si(111) substrate, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 28p-K-13, 1, 319, Mar. 2001.
• M. Suzuki, S. Okano, M. Watanabe. Oxygen ambient annealing of ZnO thin films on CaF₂/Si substrate, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 31a-YL-2, 3, 1438, Mar. 2001.
• T. Ishikawa, N. Sakamaki, D. Okamoto, M. Watanabe. Fabrication and characterization of CdF₂/CaF₂ resonant tunneling diode by selective area growth, The 48th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-YD-2, 3, 1338, Mar. 2001.
• N. Sakamaki, M. Watanabe. Room temperature negative differential resistance of CdF₂/CaF₂ resonant tunneling diode, The 61st Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 6a-ZR-9, 3, 1166, Sept. 2000.
• T. Maruyama, N. Nakamura, M. Watanabe. Crystal growth of BeSe on CaF₂/Si(111) substrate, The 61st Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 4p-Z-8, 1, 236, Sept. 2000.
• M. Suzuki, S. Okano, M. Watanabe. UV photoluminescence from ZnO/CaF₂ heteroepitaxial structure on Si(111) substrate, The 61st Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 3p-ZK-1, 3, 1195, Sept. 2000.
• T.Funayama, T. Teraji, M. Watanabe. Room temperature negative differential resistance of CdF₂/CaF₂ resonant tunneling diode, The 47th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 30a-YD-7, 3, 1340, Mar. 2000.
• Y. Iketani, M. Watanabe, M. Asada. Fabrication and characterization of Si/CaF₂ double barrier resonant tunneling diode on Si(111) 1°off substrate, The 47th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 30a-YD-8, 3, 1340, Mar. 2000.
• N. Nakamura, T. Maruyama, M. Watanabe. EL spectra from nano-crystalline Si embedded in CaF₂/Si(111) thin film, The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 3p-ZN-15, 2, 768, Sept. 1999.
• Y. Iketani, M. Watanabe, M. Asada. Ion beam epitaxial growth of CaF₂ on Si(111) 1degree substrate with controlled terrace-width, The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 1p-T-4, 1, 342, Sept. 1999.
• M. Tsutsui, M. Watanabe, M. Asada. Fabrication and characteristics of resonant tunneling diodes with Si/CaF₂ heterostructures, The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 2p-ZL-9, 2, 756, Sept. 1999.
• S. Okano, Y. Maeda, M. Watanabe. UV electroluminescence from CaF₂/ZnO/CaF₂ heteroepitaxial structure on Si(111) substrate, The 46th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 28a-ZA-9, 3, 1401, Mar. 1999.
• T. Maruyama, N. Nakamura, M. Watanabe. RTA ambient dependence of PL spectra from nano-crystalline Si embedded in CaF₂/Si(111) thin film, The 59th Autumn Meeting of The Jpn. Soc. Of Appl. Phys, 16a-ZE-8, 2, 795, Sept. 1998.
• K. Osada, Y. Aoki, M. Tsuganezawa, M. Watanabe. Analysis of Si/CaF₂ intersubband transition lasers, The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 30p-R-4, 3, 1332, Mar. 1998.
• Y. Maeda, A. Yamada, M. Watanabe. Electroluminescence spectra from ZnO nano-structure on CaF₂/Si(111), The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-S-2, 3, 1301, Mar. 1998.
• T. Maruyama, S. Ikeda, M. Watanabe. Growth condition dependence of photoluminescence spectra from nano-cryatalline Si embedded in CaF₂/Si(111) thin film, The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 29a-p-8, 2, 838, Mar. 1998.
• Y. Aoki, M. Tsuganezawa, W. Saitoh, M. Watanabe. Negative Differential Resistance of the Triple-barrier RTD using Epitaxial CaF₂/CdF₂ Superlattice, The 45th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies, 28a-R-2, 3, 1274, Mar. 1998.
• Y. Aoki, W. Saitoh, J. Nishiyama, M. Watanabe. Epitaxial growth of nanometer-thick CaF₂/CdF₂ superlattice using partially ionized beam epitaxy, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 5a-ZF-2, 3, 1328, Oct. 1997.
• M. Watanabe, Y. Iketani, H. Sugiura, K. Yoshida. Epitaxial growth of CaF₂ on low-off angle Si(111) substrate using ion assisted epitaxy, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 4p-V-16, 1, 394, Oct. 1997.
• A. Yamada, Y. Maeda, M. Watanabe. Fabrication of nano-structure ZnO on CaF₂/Si(111) and its photoluminescence spectra, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 3a-ZH-9, 3, 1282, Oct. 1997.
• W. Saitoh, Y. Aoki, J. Nishiyama, M. Watanabe, M. Asada. Epitaxial Growth of Si/CdF₂/CaF₂ Heterostructures on Si Substrate, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30a-A-3, 1, 294, Mar. 1997.
• Y. Aoki, J. Nishiyama, W. Saitoh, M. Watanabe, M. Asada. Analysis of CaF₂/CdF₂ Intersubband Transition Lasers, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28a-ZA-6, 3, 1202, Mar. 1997.
• X. Y. Jia, T. Kojima, Y. Hayafune, S. Tamura, M. Watanabe, S. Arai. Reduction of the Size Fluctuation of Quantum-Wire Structures Fabricated by Proximity Effect Correction, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-X-4, 2, 586, Mar. 1997.
• M. Watanabe, T. Matsunuma, T. Maruyama, M. Asada. Visible Electroluminescence from Silicon Nanoparticles Embedded in CaF₂ on Si(111), Second International Symposium on Control of Semiconductor Interfaces, A3-6, Oct. 1996.
• 松沼健司, Takeo Maruyama, MASAHIRO WATANABE, 浅田雅弘. Electroluminescence spectra from nano-crystalline Si embedded in CaF₂, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 8p-V15, 2, 679, Sept. 1996.
• W.Saitoh, K.Mori, H.Sugiura, T.Maruyama, M.Watanabe, M.Asada. Relation of Resistance of Ultra Thin CoSi₂ Films on CaF₂ and Crystal Quality of CaF₂, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 8p-ZE17, 1, 200, Sept. 1996.
• W.Saitoh, K.Yamazaki, M.Asada, M.Watanabe. Theoretical Analysis of Metal/Insulator Field Effect Tunneling Transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26aW6, 3, 1196, Mar. 1996.
• T.Matsunuma, T.Maruyama, M.Watanabe, M.Asada. Growth condition dependence of electroluminescence from nanometer crystalline Si embedded in CaF₂, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26aZF5, 1, 214, Mar. 1996.
• T.Suemasu, W.Saitoh, K.Mori, Y.Kohno, M.Watanabe, M.Asada. Transfer Efficiency of Hot Electrons from NDR Characteristics of a Quantum Interference Transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-W11, 3, 1266, Mar. 1996.
• T.Hattori, H.Hongo, Y.Miyamoto, KAZUHITO FURUYA, 松沼 健司, M.Watanabe, M.Asada. Seventy nm pitch CaF₂ inorganic resist pattern by electron beam exposure, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26a-SZW-27, 2, 565, Mar. 1996.
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• K. Mori, W.Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada. Fabrication and Room Temperature Characterisitics of Small Area Metal (CoSi₂)/ Insulator (CaF₂) QIT, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-ZM-9, 3, 1101, Sept. 1995.
• T. Suemasu, Y. Kohno, W. Saitoh, K. Mori, M. Watanabe, M. Asada. Reduction of operating voltage in Metal(CoSi₂)/ Insulator(CaF₂) RHET, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-ZK-6, 3, 1282, Mar. 1995.
• W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada. Fabrication and room temperature operation of Metal(CoSi₂)/ Insulator(CaF₂) nanometer-thick small-area hot electron transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-ZK-7, 3, 1282, Mar. 1995.
• M. Watanabe, F. Iizuka, M. Asada. Photoluminescence spectra of CaF₂/Si(111) thin film including Si fine particles, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-H-10, 2, 721, Mar. 1995.
• MASAHIRO WATANABE, 浅田雅弘. Formation of metal Co fine particles on CaF₂/Si(111), Nat. Conv. Rec. of The Japan Soc. of Appl. Phys, 20p-MF-14, 1, 232, Sept. 1994.
• W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada. Analysis of metal(CoSi₂)/ insulator(CaF₂) resonant tunneling hot electron transistor using equivalent circuit, Nat. Conv. Rec. of IEICE Japan, C-420, Sept. 1994.
• T. Suemasu, Y. Kohno, W. Saitoh, M. Watanabe, M. Asada. Fabrication of metal(CoSi₂)/insulator(CaF₂) resonant tunneling hot electron transistor (II), Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 19p-T-9, 3, 1061, Sept. 1994.
• Y. Kohno, T. Suemasu, W. Saitoh, M. Watanabe, M. Asada. Metal(CoSi₂)/ Insulator(CaF₂) tunneling hot electron resonant transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 19p-T-10, 3, 1061, Sept. 1994.
• Y. Kohno, T. Suemasu, N. Suzuki, M. Watanabe, M. Asada. Fabrication of metal(CoSi₂)/insulator(CaF₂) tunneling hot electron resonant transistor using new process, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-15, 3, 1230, Mar. 1994.
• N. Suzuki, T. Suemasu, M. Watanabe, M. Asada, Y. Kohno. Fabrication of metal(CoSi₂)/ insulator(CaF₂) fine-size hot electron transistor(II), Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-16, 3, 1231, Mar. 1994.
• M. Watanabe, H. Iwai, M. Asada. Formation of fine metal Co particles on insulator CaF₂, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-17, 3, 1231, Mar. 1994.
• M. Asada, M. Watanabe, T. Suemasu, N. Suzuki, Y. Kohno. Quantum effect devices using metal/insulator heterostructures, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-MA-6, (Symposium), 0, 1328, Mar. 1994.
• T. Suemasu, Y. Kouno, N. Suzuki, W. Saitoh, M. Watanabe, M. Asada. Fabrication of metal(CoSi₂)/ insulator(CaF₂) resonant tunneling hot electron transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-14, 3, 1230, Mar. 1994.
• T. Suemasu, D. Sonoda, M. Watanabe, M. Asada, K. Furuya. STM observation of Si/CaF₂/Si(111) cross section, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZX-7, 3, 1259, Sept. 1993.
• T. Suemasu, Y. Kohno, N. Suzuki, M. Watanabe, M. Asada. Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZX-5, 3, 1258, Sept. 1993.
• N. Suzuki, T. Suemasu, M. Watanabe, M. Asada, Y. Kohno. Fabrication of Metal (CoSi₂)/ Insulator (CaF₂) fine structure hot electron transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZX-6, 3, 1258, Sept. 1993.
• T. Suemasu, M. Watanabe, J. Suzuki, M. Asada, N. Suzuki. Control of the applied voltage of NDR in Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling diode, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 1a-D-2, 3, 1297, Apr. 1993.
• N. Suzuki, Y. Kohno, T. Suemasu, M. Watanabe, M. Asada. Preparation of Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling hot electron transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 1a-D-3, 3, 1298, Apr. 1993.
• M. Watanabe, S. Muratake, T. Suemasu, M. Asada. Current amplification of Metal (CoSi₂)/ Insulator (CaF₂) hot electron transistor, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 16a-SZC-17, 3, 1079, Sept. 1992.
• T. Suemasu, M. Watanabe, M. Asada, N. Suzuki. Room temperature negative differential resistance of Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling diode, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 17a-ZB-7, 3, 1109, Sept. 1992.
• M. Watanabe, N. Suzuki, S. Muratake, T. Suemasu, M. Asada. RHEED ocsillations during CaF₂ epitaxy on Si(111), Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-ZC-5, 1, 265, Mar. 1992.
• M. Watanabe, T. Suemasu, S. Muratake, M. Asada, N. Suzuki. Negative Differencial Resistance in Metal (CoSi₂)/ Insulator (CaF₂) Resonant tunneling diode, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28a-T-5, 3, 1107, Mar. 1992.
• T. Suemasu, M. Watanabe, S. Muratake, M. Asada. Epitaxial growth of CoSi₂ on CaF₂/Si(111) with electron beam evaporated Si, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 9p-Z-12, 1, 228, Oct. 1991.
• M. Watanabe, S. Muratake, H. Fujimoto, M. Asada. Epitaxial growth of Metal (CoSi₂)/ Insulator (CaF₂) superlattice structure, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 9p-Z-11, 1, 228, Oct. 1991.
• S. Muratake, M. Watanabe, M. Asada. Fabrication of MIS (CoSi₂/CaF₂/Si) tunneling diodes, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 12a-N-7, 2, 478, Oct. 1991.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, S. Arai. Resistivity measurement of CoSi₂ epitaxial thin films on CaF₂/Si(111), Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZF-3, 1, 244, Mar. 1991.
• H. Muguruma, M. Watanabe, M. Asada, S. Arai. The energy band structure of metal (CoSi₂)- insulator (CaF₂) superlattice, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-M-3, 3, 1158, Mar. 1991.
• T. Sakaguchi, M. Watanabe, M. Asada. Analysis of quantum-size-effect high-speed electron devices using metal-insulator hetero-structure, Nat. Conv. Rec. of IEICE of Japan, C-410, Oct. 1990.
• M. Watanabe, H. Muguruma, S. Muratake, M. Asada, S. Arai. Epitaxial growth of CaF₂/CoSi₂/ CaF₂/ Si(111) by ICB technique, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28a-T-11, 1, 275, Sept. 1990.
• M. Watanabe, H. Muguruma, S. Muratake, M. Asada, S. Arai. Epitaxial growth of CoSi₂ on CaF₂(111) thin film by ICB technique, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys, 29a-PC-18, 1, 251, Mar. 1990.
• MASAHIRO WATANABE, 浅田雅弘. Analysis of grid barrier mode of space charge limited metal/insulator electric devices, Nat. Conv. Rec. of IEICE of Japan, C-546, Mar. 1990.
• M. Asada, T. Sakaguchi, M. Watanabe. Possibility of Novel Device for LSI Using Nanometer Insulator Film, Nat. Conv. Rec. of IEICE of Japan, SC-6-4, Sept. 1989.
• M. Watanabe, H. Muguruma, M. Asada, S. Arai. Low Temperature Epitaxial Growth of CaF₂ Films by ICB Technique., Nat. Conv. Rec. of The Japan Soc. of Appl. Phys, 28a-H-5, 2, 472, Sept. 1989.
• M. Watanabe, H. Muguruma, M. Asada, S. Arai. Accelaration Voltage Dependence of Breakdown Field of ICB-grown CaF₂ Films, 第36回応用物理学会関係連合講演会, 3p-L-1, 2, 605, Apr. 1989.

Other Publication

• MASAHIRO WATANABE. ナノデバイスの機能設計と超高真空技術～新原理不揮発メモリ素子の探索的研究を例として～, 真空ジャーナル, No. 148, pp. 10-15, Apr. 2014.
• MASAHIRO WATANABE. Metal/insulator heterostructure electron devices, A monthly publication of the Jpn. Soc. of Appl. Phys.,, Vol. 63, No. 2, pp. 124-131, Feb. 2014.
• MASAHIRO WATANABE. Enhancement of Multiexciton Generation using Epitaxial, International Symposium on Innovative Solar Cells 2009, pp. 172, Mar. 2009.
• K. Jinen, K. Uchida, S. Kodaira, M. Watanabe, M. Asad. ED2006-244，SDM2006-232,  Theoretical Analysis of Fluoride-based Intersubband Transition Laser, 電子情報通信学会（電子デバイス研究会）, Vol. 106, No. 520, 23-28, Jan. 2007.
• K. Jinen, T. Kikuchi, S. Kodaira, K. Uchida, M. Watanabe, M. Asada. Electroluminescence from (CdF₂/CaF₂) Inter-subband Transition Laser Structures on Si substrate, 電子情報通信学会（電子デバイス研究会）, 信学技報, vol.105, no.550, ED2005-232，SDM2005-244, Vol. .105, No. 550, pp. 7-10, Jan. 2006.
• T. Kanazawa, A. Morosawa, R. Fujii, T. Wata, M. Watanabe, M. Asada. ED2005-233，SDM2005-245,  Fluoride based Resonant Tunneling Diode on Si(100) substrate using Nanoarea Local Growth, 電子情報通信学会（電子デバイス研究会）, Vol. 105, No. 550, 11-14, Jan. 2006.
• M. Watanabe, S. Tamura, T. Kanazawa, K. Jinen, M. Asada. Negative Differential Resistance of CoSi₂/CaF₂ Triple Barrier Resonant Tunneling Diode Grown by Loacl Epitaxy, 電子情報通信学会（電子デバイス研究会）, ED2004-227, SDM2004-222, 7-10, Jan. 2005.
• MASAHIRO WATANABE. Migration enhanced epitaxy of BeZnSe grown on GaP substrate, 第23回電子材料シンポジウム (EMS-23), H2, 203-206, July 2004.
• M. Watanabe, T. Kanazawa, K. Jinen, M. Asada. Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate, 電子情報通信学会（電子デバイス研究会）, ED2003-231, SDM2003-217, 25-28, Feb. 2004.
• Y. Niiyama, T. Yokoyama, M. Watanabe. Epitaxial growth and optical properties of BeMgZnSe for ultraviolet laser diodes, 第22回電子材料シンポジウム G9, 231-234, July 2003.
• M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, M. Asada. Structure Dependence of Negative Differential Resistance Characteristcs of CdF₂/CaF₂ Resonant Tunneling Diode Grown by Nanoarea Local Epitaxy, 電子情報通信学会（電子デバイス研究会）, ED2002-287, SDM2002-250, 33-38, Feb. 2003.
• M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, M. Asada. CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy, 電子情報通信学会（電子デバイス研究会）, ED2001-242, SDM2001-245, 65-70, Jan. 2002.
• M. Watanabe, M. Tsutsui, M. Asada. Resonant Tunneling Diode Silicon Substrate using Si-CaF₂ and CdF₂-CaF₂ Heterostructures, 電子情報通信学会（電子デバイス研究会）, ED99-316, SDM99-209, 73-78, Feb. 2000.
• Masahiro WATANABE, Mika TSUGANEZAWA, Tosihyuki FUNAYAMA, Daisuke KURUMA. Negative differential resistance of CdF₂/CaF₂ resonant tunneling diode on Si(111) grown by partially ionized beam epitaxy, 5th International Symposium on Quantum Effect Electronics, 10, p. 42-45, Oct. 1998.
• Masahiro WATANABE, Yuichi AOKI. CaF₂/CdF₂ Quantum well intersubband transition lasers, 4th International Symposium on Quantum Effect Electronics, 10, p. 40, Oct. 1997.
• W. Saitoh, M. Tsutsui, Y. Aoki, K. Yamazaki, J. Nishiyama, M. Watanabe, M. Asada. Field-Effect Quantum Devices with Si/CdF₂ Quantum-Well Structure on Si substrate, 電子情報通信学会（電子デバイス研究会）, ED97-6, SDM97-6, 35-42, Apr. 1997.
• Masahiro WATANABE, Takeshi MATSUNUMA, Takeo MARUYAMA, Masahiro ASADA. Visible light emission from nanocrystalline silicon embedded in CaF₂ layers on Si(111), 3rd International Symposium on Quantum Effect Electronics, 11, p. 48, Nov. 1996.
• M. Asada, M. Watanabe, W. Saitoh, K. Mori, Y. Kohno, 森郁. Quantum-Effect Electron Devices Using Metal(CoSi₂)/Insulator(CaF₂)/Si Heterostructures, 電子情報通信学会（電子デバイス研究会）, ED96-2, Apr. 1996.
• M.Watanabe, T.Suemasu, N.Suzuki, M.Asada. Resonant Tunneling Diode with Metal (CoSi₂)/ Insulator (CaF₂) Ultra-thin Multilayered Structure on Si(111), 応用物理学会（応用電子物性分科会）, 932204, No. 447, pp. 31-36, Jan. 1993.
• M. Watanabe, T. Suemasu, S. Muratake, M. Asada. Negative Differential Resistance Characteristics of Metal (CoSi₂)/ Insulator (CaF₂) Resonant Tunneling Diode, 電子情報通信学会（電子デバイス研究会）, Vol. 92, No. 10, 83-88, Apr. 1992.

Degree

• Fundamental Study of Metal/Insulator Heterostructure Electron Devices,  Thesis,  Doctor of Engineering,  東京工業大学,  1993/03/26,   

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