論文

• "M.S. Hadi", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "K. Kakushima". Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes, Microelectronics Reliability, Vol. 63, pp. 42-45, Aug. 2016.
• "Mokh Hadi", "Shinichi Kano", "Kuniyuki Kakushima", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer, Semiconductor Science and Technology, Vol. 29, No. 11, Oct. 2014.
• "Y. Wu", "H. Hasegawa", "K. Kakushima", "K. Ohmori", "T. Watanabe", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "Y. Kataoka", "K. Natori", "K. Yamada", "H. Iwai". A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability, Microelectronics Reliability, Vol. 54, No. 5, pp. 899-904, May 2014.
• "Chunmeng Dou", "Tomoya Shoji", "Kazuhiro Nakajima", "Kuniyuki Kakushima", "Parhat Ahmet", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, pp. 725-729, Apr. 2014.
• "T. Kawanago", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT, IEEE Transaction on Electron Devices(T-ED), Vol. 61, No. 3, pp. 785-791, Feb. 2014.
• "K. Tuokedaerhan", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain, Applied Physics Letters (APL), Vol. 104, No. 2, Jan. 2014.
• "K. Tuokedaerhan", "R. Tan, K. Kakushima", "P. Ahmet", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "T. Hattori", "H. Iwai". Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application, Applied Physics Letters (APL), Vol. 103, Sept. 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, Kenji Natori, HIROSHI IWAI. Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure, Solid-State Electronics, Vol. 84, pp. 53-57, June 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Hiroshi Nohira, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, Solid-State Electronics, Vol. 82, pp. 29-33, Apr. 2013.
• Y. Wu, 竇春萌, F. Wei, Kuniyuki KAKUSHIMA, 大毛利健治, パールハットアヘメト, T. Watanabe, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, 片岡好則, takeo hattori, HIROSHI IWAI. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability, Japanese Journal of Applied Physics, Vol. 52, No. 4S, pp. 04CC28-1-04CC28-5, Apr. 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs, Solid-State Electronics, Vol. 74, pp. 2-6, Aug. 2012.
• マイマイティ マイマイティレャアティ, 久保田透, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡好則, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors, Microelectronics Reliability, Vol. 52, No. 6, pp. 1039-1042, June 2012.
• C. Dou, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer, Microelectronics Reliability, Vol. 32, No. 4, pp. 688-691, Apr. 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, 片岡好則, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Valance number transition and silicate formation of cerrium oxide on Si(100), Vacuum, Vol. 86, No. 10, pp. 1513-1516, Apr. 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡 好則, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs, Semiconductor Science and Technology, Vol. 27, No. 4, Mar. 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2, IEEE ELECTRON DEVICE LETTERS, Vol. 33, No. 3, pp. 423-425, Mar. 2012.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature, IEEE Transactions on Electron Devices, Vol. 59, No. 2, pp. 269-276, Feb. 2012.
• Takamasa Kawanago, 鈴木 拓也, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process, Solid-State Electronics, Vol. 68, pp. .68-72, Feb. 2012.
• 来山大祐, 久保田透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. [ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA05-1-5, Oct. 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA04-1-4, Oct. 2011.
• ダリューシュザデ, Takashi Kanda, 山下晃司, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PD03-1-4, Oct. 2011.
• ダリューシュザデ, Kuniyuki KAKUSHIMA, Takashi Kanda, Y.C.Lin, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques, Microelectronic Engineering, Vol. 88, No. 7, pp. 1109-1112, July 2011.
• 来山大祐, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3, Microelectronic Engineering, Vol. 88, No. 7, pp. 1330-1333, July 2011.
• DARYOUSH ZADEH, Soshi Sato, Kuniyuki KAKUSHIMA, A. Srivastava, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, C.K. Sarkar, HIROSHI IWAI. Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise, Microelectronics Reliability, Vol. 51, pp. 746-750, Apr. 2011.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of rare earth silicates for highly scaled gate dielectrics, Microelectronic Engineering, Vol. 87, No. 10, pp. 1868-1871, Oct. 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, M.Adachi, Koichi Okamoto, Soshi Sato, Jaeyeol Song, Takamasa Kawanago, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Interface and electrical properties of La-silicate for direct contact of high-k with silicon, Solid-State Electronics, Vol. 54, pp. 715-719, June 2010.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 25, No. 6, 065008, May 2010.
• M.K.Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 25, No. 6, 065008, May 2010.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. SrO capping effect for La2O3/ Ce-Silicate gate dielectrics, Microelectronics Reliability 50, pp. 356-359, Mar. 2010.
• Kuniyuki KAKUSHIMA, M. Nakagawa, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric, Semiconductor Science and Technology, Vol. 25, No. 4, 045029, 2010.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, Kiichi Tachi, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric, Solid-State Electronics, Vol. 54, pp. 720-723, 2010.
• Tomotsune Koyanagi, Kiichi Tachi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation, Japanese Journal of Applied Physics, Vol. 48, 2009.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, Jaeyeol Song, Soshi Sato, Hiroshi Nohira, E. Ikenaga, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film, JOURNAL OF APPLIED PHYSICS, [ 145] K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui, N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009, Vol. 106, 2009.
• Ahmet Parhat, 中川健太郎, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability, Vol. 48, pp. 1769–1771, 2008.
• Kuniyuki KAKUSHIMA, K. Okamoto, M. Adachi, Kiichi Tachi, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion, SOLID-STATE ELECTRONICS, Vol. 52, pp. 1280-1284, 2008.
• Ahmet Parhat, Nakagawa Kentaro, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability 48, Vol. 48, pp. 1769–1771, 2008.
• Reyes Joel Molina, A. Torres, W. Calleja, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Degradation and breakdown of W-La2O3 stack after annealing in N-2, JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 47, pp. 7076-7080, 2008.
• Takamasa Kawanago, Kiichi Tachi, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application, Microelectronic Engineering, Vol. 84, pp. 2335-2338, 2007.
• Soshi Sato, Kiichi Tachi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Thermal-stability improvement of LaON thin film formed using nitrogen radicals, Microelectronic Engineering, Vol. 84, pp. 1894-1897, 2007.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Improvement of interfacial properties with interfacial layer in La2O3 / Ge structure, Microelectronic Engineering, Vol. 84, pp. 2336-2339, 2007.

国際会議発表 (査読有り)

• T. Shoji, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells, 29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014), Sept. 2014.
• T. Ohashi, H. Wakabayashi, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes, China Semiconductor Technology International Conference (CSTIC) 2014, 2014.
• DARYOUSH ZADEH, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction, IEDM 2013, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode, 224th ECS Meeting in San Francisco, Oct. 2013.
• T. Seki, T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Electrical and Infrared Absorption Studies on La-silicate/Si Interface, IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013), Feb. 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.
• ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT, ESSDERC 2013, 2013.
• Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, S. Yamasaki, H. Iwai. TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal, PRiME 2012, Oct. 2012.
• T. Kamale, R. Tan, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, PRiME 2012, Oct. 2012.
• S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai. Influence of Electrode Material for CaOx Based Resistive Switching, China Semiconductor Technology International Conference (CSTIC), Mar. 2012.
• T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. (100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture, 42nd European Solid-State Device Research Conference (ESSDERC 2012), 2012.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• Ahmet Parhat, 来山大祐, 金田翼, 鈴木 拓也, Tomotsune Koyanagi, Miyuki Kouda, マイマイティ マイマイティレャアティ, Takamasa Kawanago, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm, CSTIC2011, 2011.
• unknown unknown, Kuniyuki KAKUSHIMA, Ahmet Parhat, M. Geni, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• 来山大祐, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT, ECS 218th Meeting, Oct. 2010.
• D. Kitayama, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai. TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT, 218th ECS Meeting, Oct. 2010.
• Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3 Gated MOS Device, ECS 218th Meeting, Oct. 2010.
• M.Bera, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Nobuyuki Sugii, 西山彰, takeo hattori, HIROSHI IWAI. Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge, ECS 218th Meeting, Oct. 2010.
• M. Mamatrishat, Miyuki Kouda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, A. Aierken, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, HIROSHI IWAI. Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics, ECS 218th Meeting, Oct. 2010.
• Y. Wu, Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, 西山彰, KENJI NATORI, takeo hattori, HIROSHI IWAI. Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface, ECS 218th Meeting, Oct. 2010.
• Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation, tECS 218th Meeting, Oct. 2010.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks, ESSDERC 2010, 40th European Solid-State Device Research Conference, Sept. 2010.
• AbudukelimuAbudureheman, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, HIROSHI IWAI, takeo hattori, KENJI NATORI. Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters, China Semiconductor Technology International Conference, pp. 1111-1116, Mar. 2010.
• Wataru Hosoda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer, China Semiconductor Technology International Conference, pp. 1105-1110, Mar. 2010.
• Katuya Matano, Kiyohisa Funamizu, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric, China Semiconductor Technology International Conference, [, pp. 1129-1134, Mar. 2010.
• Hideaki Arai, Hideyuki Kamimura, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Reaction for Ni Silicidation of Si Nanowire, ECS 216th Meeting, vol. 25, No. 7, pp. 447-454, Oct. 2009.
• Tomotsune Koyanagi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, AKIRA NISHIYAMA, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device, ECS 216th Meeting, vol. 25, No. 6, pp. 17-22, Oct. 2009.
• Hiroto Nakayama, Kuniyuki KAKUSHIMA, Ahmet Parhat, E.Ikenaga, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors, ECS 216th Meeting, vol. 25, No. 6, pp. 339-345, Oct. 2009.
• Kiyohisa Funamizu, Y.C. Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, E.Y. Chang, takeo hattori, HIROSHI IWAI. Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure, ECS 216th Meeting, vol. 25, No. 6, pp. 265-270, Oct. 2009.
• M.K.Bera, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge, ECS 216th Meeting, vol. 25, No. 6, pp. 67-77, Oct. 2009.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Kiichi Tachi, Miyuki Kouda, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm, ESSDERC 2009, 39th European Solid-State Device Research Conference, p. 403, Sept. 2009.
• M.Mamatrishat, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks, ECS 216th Meeting, vol. 25, No. 7, pp. 253-257, Sept. 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Post metallization annealing study in La2O3/Ge MOS structure, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1638-1641, June 2009.
• Takamasa Kawanago, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1629-1631, June 2009.
• Hideyuki Kamimura, Hideaki Arai, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact, ISTC /CSTIC2009, ISTC /CSTIC2009, pp. 58, Mar. 2009.
• Hiroki Fujisawa, A Srivastava, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, C.K. Sarkar, HIROSHI IWAI. Electrical Characterization of W/HfO2 MOSFETs with La2O3 Incorporation, ISTC /CSTIC2009, ISTC /CSTIC2009, pp. 53, Mar. 2009.
• H. Nakayama, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation, 216th ECS Meeting, 2009.
• K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. 0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Okamoto, K. Tachi, S. Sato, J. Song, T. Kawanago, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• M. Kouda, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• M. Hino, K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori, H. Iwai. Study on Stress Memorization by Argon Implantation and Annealing, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Impact of Thin La2O3 Insertion for HfO2 MOSFET, 213th ECS Meeting, May 2008.
• Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers, 7th Int. Semiconductor Technology Conference (ECS-ISTC2008), May 2008.
• Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007), Nov. 2007.
• H. Sauddin, Y. Sasaki, H. Ito, B. Mizuno, P. Ahmet, K. Kakushima, N. Sugii, K. Tsutsui, H. Iwai. Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping, 2006 Joint International Meeting of ECS, Oct. 2006.
• K. Tachi, H. Iwai, T. Hattori, N. Sugii, K. Tsutsui, P. Ahemt, K. Kakushima. Effect of Oxygen for Ultra-Thin La2O3 Film Deposition, 2006 Joint International Meeting of ECS, Oct. 2006.
• Y. Shiino, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing, 2006 Joint International Meeting of ECS, Oct. 2006.
• J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, I. Hiroshi. Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2, 2006 Joint International Meeting of ECS, Oct. 2006.

国内会議発表 (査読有り)

• 日野雅文, 吉田哲也, 小瀬村 大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋 厚志, 服部健雄, 岩井洋. SiN応力膜によるSi基板への歪記憶の検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2008.
• 佐藤創志, 舘喜一, 宋在烈, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. ラジカル窒化によるLa_2O3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）, 電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス, 電子情報通信学会, Vol. 107, No. 85, pp. 71-74, May 2007.

国際会議発表 (査読なし・不明)

• H. Hasegawa, Y.Wu, J.Song, K. Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Motoki, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama, Feb. 2014.
• T. Kato, T.Inamura, A.Sasaki, K.Aoki, K.Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Thickness-dependent electrical characterization of β‐FeSi2, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Y. Ito, H. Hori, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y.Kataoka, A.Nishiyama, N. Sugii, K. Natori, H. Iwai. Proposal of junction formation process for solar cells made of silicon microstructures, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Y. Nakamura, K. Kakushima, Y. Kataoka, A. Nishiyama, H. Wakabayashi, N. Sugii, K. Tsutsui, K. Natori, H. Iwai. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics: WIMNACT, Feb. 2014.
• Takumi Ohashi, Hitoshi Wakabayashi, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, KAZUO TSUTSUI, HIROSHI IWAI. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hayato Hori, Yuuma Itou, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Effects of substrate back bias on solar cells formed on thin SOI structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yuuma Itou, Hayato Hori, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Schottky barrier height reduction process for silicide/Si interfaces, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yoshihiro Matsukawa, Mari Okamoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Takafumi Katou, Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristic of b-FeSi2, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 雷 一鳴, Shu Munekiyo, Kuniyuki KAKUSHIMA, Takamasa Kawanago, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, M. Furuhashi, N. Miura, S. Yamakawa. Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroki Hasegawa, Y. Wu, 宋 禛漢, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Hitoshi Wakabayashi, Nobuyuki Sugii, HIROSHI IWAI. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Tomoya Shoji, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroaki Imamura, Taichi Inamura, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films, J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• 吉原亮, Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Interface control process toward un-pinned metal/germanium Schottky contact, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kenji Natori, takeo hattori, HIROSHI IWAI. Atomically flat interface of La-silicate/Si with W2C gate electrodes, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 関拓也, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111), The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, Akira Nishiyama, Nobuyuki Sugii, 片岡好則, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Effect of pretreatment for high-/k//InGaAs interface property, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Taichi Inamura, Takafumi Katou, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on silicide semiconductors for high efficiency thin film photovoltaic devices, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Jiangning Chen, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, 齋藤渉. Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• wei li, 佐々木亮人, 大図秀行, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, HIROSHI IWAI. Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, 大毛利健治, T. Watanabe, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, Keisaku Yamada, HIROSHI IWAI. Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-, 2014.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• unknown unknown, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Mari Okamoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiS, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 61-64, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 385-389, Oct. 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. International Symposium on Next-Generation Electronics(ISNE 2013), International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Mari Okamoto, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), February 18, 2013, , Japan, 2013.
• 宋 禛漢, 小山将央, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 中塚理, 大毛利健治, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Atomically flat Ni-silicide/Si interface using NiSi2 sputtering, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Novel Ohmic Contact Process for n-Ge Substrates, R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Surface Treatments for Metal Contact on p-type Diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Infrared absorption study of La-silicate gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent resistivity change of Ni-silicides in nano-region, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Stacked Ni-Silicidation Process for Schottky Barrier FET, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface controlled metal contact for n-type diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuya Suzuki, ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Transient Switching Characteristics of Ce-oxide Resistive Switching Devices, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Wei Li, 中島一裕, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Interface State Density of 3-dimensional Si channel, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, Miranda Enrique, takeo hattori, HIROSHI IWAI. Influence electrode materials on CeOx based resistive switching, CSTIC 2012, 2013.
• Yuya Suzuki, ダリューシュザデ, Ryuji Hosoi, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation, 15th International Conference on Thin Films, 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure, 15th International Conference on Thin Films, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, 中塚理, パールハットアヘメト, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100), 15th International Conference on Thin Films, 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• Tasuku Kaneda, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 157-164, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel Ni silicidation technology for Schottky diode formation, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• DARYOUSH ZADEH, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of metal Schottky junction for InGaAs substrate, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 小山将央, Naoto Shigemori, Kenji Ozawa, Kiichi Tachi, Kuniyuki KAKUSHIMA, O. Nakatsuka, 大毛利健治, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source, 41st European Solid-State Device Research Conference, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, KENJI NATORI, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, [G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• マイマイティ マイマイティレャアティ, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• unknown unknown, A. Ablimit, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electron transport in ballistic diodes: influence of phonon generation in drain region, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET, 41st European Solid-State Device Research Conference, 2013.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by conductance method, Interface state density measurements of 3D silicon channel by conductance method, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• マイマイティ マイマイティレャアティ, 関拓也, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Heat Generation within Drain Region on Transport of Hot Electrons, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• DARYOUSH ZADEH, Ryuji Hosoi, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Characterization and improvement of high-k/InGaAs devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• K. Tuokedaerhan, Tasuku Kaneda, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Annealing Ambient for La2O3/Si Capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Daisuke Kitayama, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, [550] K. Nakajima, W. Li, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Interface state density measurements of 3D silicon channel by charge pumping method”, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive swirching properties of Ce oxides, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates, CSTIC 2012, 2012.
• Wei Li, 中島一裕, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method, CSTIC 2012, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process, ECS 222nd Meeting, ECS Transactions, 2012.
• Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 145-150, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 9, pp. 217-221, 2012.
• Tohtarhan Kamal, R. Tan, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 281-284, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure, ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,, ECS Transactions, Vol. 50, No. 3, pp. 447-450, 2012.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• ダリューシュザデ, Takashi Kanda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. An effective suppression process for Ni silicide enchroachment into Si nanowire, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 小山将央, Naoto Shigemori, Hideaki Arai, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Lateral encroachment of Ni silicide into silicon nanowire, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, Tsukuba Nanotechnology Symposium(TNS’11), 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics, ECS 220th Meeting,ECS Transactions, ECS Transactions, Vol. 41, No. 7, pp. 119-124, 2011.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation, CSTIC2011, 2011.
• 来山大祐, 久保田 透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, HIROSHI IWAI. Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 金田翼, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effect of rare earth oxide capping for La-based gate oxides, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Takamasa Kawanago, 鈴木 拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. An effective process for oxygen defect suppression for La-based oxide gate dielectric, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 119-124, 2011.
• Takashi Kanda, ダリューシュザデ, Y. C. Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y. Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors, CSTIC2011, 2011.
• C. Dou, 向井 弘樹, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure, 219th ECS Meeting, 2011.
• Ahmet Parhat, 来山大祐, 金田翼, 鈴木 拓也, Tomotsune Koyanagi, Miyuki Kouda, マイマイティ マイマイティレャアティ, Takamasa Kawanago, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks, ,219th ECS Meeting, 2011.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, 来山大祐, Miyuki Kouda, Jaeyeol Song, Takamasa Kawanago, M. Mamatrishat, Kiichi Tachi, M. K. Bera, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, Keisaku Yamada, HIROSHI IWAI. Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability, 2010 Symposium on VLSI Technology, June 2010.

国内会議発表 (査読なし・不明)

• Chunmeng Dou, Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Siナノワイヤー曲面における保護膜界面準位密度の研究, 第61回応用物理学会春季学術講演会, 2014.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 大橋弘通, 岩井洋, 齋藤渉. TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第61回応用物理学会春季学術講演会, 2014.
• 今村浩章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価, 第61回応用物理学会春季学術講演会, 2014.
• 吉原亮, 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子, 第61回応用物理学会春季学術講演会, 2014.
• 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現, 第61回応用物理学会春季学術講演会, 2014.
• 関拓也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響, 第61回応用物理学会春季学術講演会, 2014.
• 稲村太一, 嘉藤貴史, 佐々木亮人, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. β-FeSi2の抵抗率熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• LiWei, 佐々木亮人, 大図 秀行, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 単斜晶WO3薄膜抵抗率の熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• 陳江寧, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性, 第61回応用物理学会春季学術講演会, 2014.
• 呉研, 長谷川明紀, 角嶋邦之, 渡辺 孝信, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性, 第61回応用物理学会春季学術講演会, 2014.
• Tuokedaerhan Kamale, Shuhei Hosoda, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. W2Cゲート電極によるLa-silicate MOSFETの移動度改善, 第61回応用物理学会春季学術講演会, 2014.
• ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 大嶺洋, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 立体Si構造における局所的な界面準位密度の抽出, ゲートスタック研究会 ―材料・プロセス・評価の物理―（第19回研究会）, 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 伊藤勇磨, 堀隼人, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 微細Si構造を利用した太陽電池に適した接合プロセスの提案, 第61回応用物理学会春季学術講演会, 2014.
• 堀隼人, 伊藤勇磨, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 薄膜SOI太陽電池の発電特性への基板バイアス効果, 第61回応用物理学会春季学術講演会, 2014.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性, 第61回応用物理学会春季学術講演会, 2014.
• 雷 一鳴, 宗清修, 角嶋邦之, 川那子高暢, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 古橋 壮之, 三浦 成久, 山川 聡. ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析, 第61回応用物理学会春季学術講演会, 2014.
• 劉 璞誠, 竇春萌, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 譚錫昊, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係, 第61回応用物理学会春季学術講演会（2014年3月17日～3月20日）, 2014.
• 宋 禛漢, 松本一輝, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 服部健雄, 岩井洋. Niシリサイドナノワイヤ抵抗率のNi膜厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 鹿国強, 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響, 第74回応用物理学会秋季学術講演会, 2013.
• 今村浩章, 稲村太一, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価, 第74回応用物理学会秋季学術講演会, 2013.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第74回応用物理学会秋季学術講演会, 2013.
• 小路智也, 石川昂, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定, 第74回応用物理学会秋季学術講演会, 2013.
• 中村嘉基, 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 若林整, 杉井信之, 筒井一生, 名取研二, 岩井洋. W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価, 第74回応用物理学会秋季学術講演会, 2013.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上, 第74回応用物理学会秋季学術講演会, 2013.
• 宗清修, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響, 第74回応用物理学会秋季学術講演会, 2013.
• 元木雅章, 吉原亮, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 譚錫昊, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 劉 璞誠, 米澤宏昭, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. AlGaNのドライエッチングへのBcl3の影響に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 嘉藤貴史, 稲村太一, 佐々木 亮人, 青木 克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 石川昂, 小路智也, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた三次元Si構造の界面準位密度測定, 第74回応用物理学会秋季学術講演会, 2013.
• 大橋匠, 若林整, 角嶋邦之, 杉井信之, 西山彰, 片岡好則, 名取研二, 筒井一生, 岩井洋. 単層MoS2チャネルを用いたn-MOSFETの性能見積もり, [第74回応用物理学会秋季学術講演会, 2013.
• 細田倫央, 李映勲, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 岩井洋. 矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性, 第72回応用物理学会学術講演会, 2011.
• 叶真一, MokhammadSholihul Hadi, 竇春萌, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性, 第72回応用物理学会学術講演会, 2011.
• LiWei, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価, 第72回応用物理学会学術講演会, 2011.
• 吉原 亮, 角嶋邦之, パールハットアヘメト, 中塚理, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性, 第72回応用物理学会学術講演会, 2011.
• 田村雄太, 角嶋邦之, 中塚 理, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響, 第72回応用物理学会学術講演会, 2011.
• 松本一輝, 小山将央, 呉研, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討, 第72回応用物理学会学術講演会, 2011.
• 鈴木佑哉, 細井隆司, ダリューシュザデ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析, 第72回応用物理学会学術講演会, 2011.
• 常石佳奈, 来山大祐, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性, 第72回応用物理学会学術講演会, 2011.
• Kamale Tuokedaerhan, 金田翼, マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響, 第72回応用物理学会学術講演会, 2011.
• 関 拓也, 来山大祐, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. High-k/Si 直接接合構造における界面準位の定量評価について, 第72回応用物理学会学術講演会, 2011.
• 田中 祐樹, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響, 第72回応用物理学会学術講演会, 2011.
• 呉研, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測, 第７１回応用物理学会学術講演会, Sept. 2010.
• 金田翼, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価, 第７１回応用物理学会学術講演会, Sept. 2010.
• 細井隆司, 神田高志, ダリューシュザデ, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. 絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 中島 一裕, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. チャージポンピング法による立体Si構造の界面準位密度の評価, 第７１回応用物理学会学術講演会, Sept. 2010.
• 小山 将央, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. 窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討, 第７１回応用物理学会学術講演会, Sept. 2010.
• マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 鈴木 拓也, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用, 第７１回応用物理学会学術講演会, Sept. 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果, 第７１回応用物理学会学術講演会, Sept. 2010.
• 竇 春萌, マイマイティ マイマイティレャアティ, ダリューシュザデ, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 角嶋邦之, 小柳友常, 来山大祐, 幸田みゆき, 宋在烈, 佐藤創志, 川那子高暢, M. マイマイティ, 舘喜一, M.K. Bera, パールハットアヘメト, 野平博司, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 山田啓作, 岩井洋. LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御, 応用物理学会分科会 シリコンテクノロジー, ，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）, No. 127, pp. 4-8, July 2010.
• 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討, 電子情報通信学会技術研究報告 pp.17-22, June 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討, 電子情報通信学会技術研究報告 pp.43-48, June 2010.
• 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-098, Mar. 2010.
• 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜中のSiナノワイヤへのNi拡散の制御, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-269, Mar. 2010.
• 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸素添加がWゲートMOSデバイスの電気特性に与える影響, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-151, Mar. 2010.
• 神田高志, 船水清永, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-141, Mar. 2010.
• 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類酸化物をキャップすることによるMOSFETの電気特性の改善, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-097, Mar. 2010.
• 小澤健児, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3 MOSFETへのCeOxキャップによる電気特性の改善, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-096, Mar. 2010.
• ダリューシュ ザデ, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-095, Mar. 2010.
• 来山 大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-094, Mar. 2010.
• 金田翼, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Effect of Rare Earth Oxide Capping for La-based Gate Oxides, 複合創造領域シンポジウム, 2010.
• 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation, 複合創造領域シンポジウム, 2010.
• 川那子高暢, 鈴木 拓也, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric, 複合創造領域シンポジウム, 2010.
• 中島一裕, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Interface state density of 3-D structured Si using charge pumping method, 複合創造領域シンポジウム, 2010.
• 小山将央, 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Lateral encroachment of Ni silicide into Si nanowire, 複合創造領域シンポジウム, 2010.
• 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation, 複合創造領域シンポジウム, 2010.
• マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 岩井洋. Remote Coulomb and roughness scatterings in gate oxide scaling, 複合創造領域シンポジウム, 2010.
• AbudukelimuAbudureheman, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. The Effect of Scattering in Drain Region of Ballistic Channel Diode, 複合創造領域シンポジウム, 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling, 複合創造領域シンポジウム, 2010.
• 久保田透, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Spectroscopic analysis of interface state density in high-k/Si structure, 複合創造領域シンポジウム, 2010.
• ダリューシュザデ, 神田高志, 細井隆司, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As, 複合創造領域シンポジウム, 2010.
• 竇春萌, 向井弘樹, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Feasibility study of Ce oxide for resistive RAM application, 複合創造領域シンポジウム, 2010.
• 呉研, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface, 複合創造領域シンポジウム, 2010.
• Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Katuya Matano, Kuniyuki KAKUSHIMA, Ahmet Parhat, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Threshold Voltage Control in p-MOSFET with High-k Gate dielectric, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Wataru Hosoda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Kiyohisa Funamizu, Takashi Kanda, Y.C.Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Hideaki Arai, Hideyuki Kamimura, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Reaction for Ni Silicidation of Si Nanowire, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Hiroto Nakayama, Kuniyuki KAKUSHIMA, Ahmet Parhat, E.Ikenaga, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• A.Abudukelimu, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• M.Mamatrishat, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• 船水清永, Yueh-Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, Edward Yi Chang, 服部健雄, 岩井洋. High-k ゲート絶縁膜を用いたInxGa1-xAs MOS構造の研究, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 837, July 2009.
• 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La2O3MOSデバイスへのSrO導入による電気特性の変化, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 中山寛人, 日野雅文, 永田晃基, 小瀬村大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋厚志, 服部健雄, 岩井洋. As注入とSiN応力膜によるpoly-Siへの歪記憶の検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 869, Mar. 2009.
• 又野克哉, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Ge層挿入によるLa2O3-MOSキャパシタのVFB制御, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 新井英朗, 上村英之, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. SiナノワイヤへのNiシリサイド形成の評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 901, Mar. 2009.
• 佐藤創志, 上村英之, 新井英朗, 角嶋邦之, パールハットアヘメト, 大毛利健二, 筒井一生, 杉井信之, 服部健雄, 山田啓作, 岩井洋. 四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 901, Mar. 2009.
• 細田亘, 野口浩平, パールハットアヘメト, 角嶋邦之, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用, 第56回応用物理学関係連合講演会, 第56回応用物理学会予稿集, 応用物理学会, No. 2, pp. 868, Mar. 2009.
• 宋在烈, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 840, Mar. 2009.
• 新井英朗, 上村英之, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 服部健雄, 杉井信之, 岩井洋. 熱酸化によるSi ナノワイヤの作製とその電気特性, 秋季第69回応用物理学会学術講演会, 応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 768, Sept. 2008.
• 佐藤創志, 上村英之, 新井英朗, 大毛利健二, 角嶋邦之, パールハットアヘメト, 筒井一生, 服部健雄, 杉井信之, 山田啓作, 岩井洋. Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 735, Sept. 2008.
• 又野克哉, 野口 浩平, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 751, Sept. 2008.
• 細田亘, 野口浩平, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 751, Sept. 2008.
• 中山寛人, 日野雅文, 服部健雄, 杉井信之, 筒井一生, パールハットアヘメト, 角嶋邦之, 小椋厚志, 永田 晃基, 吉田 哲也, 小瀬村大亮, 岩井洋. Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 743, Sept. 2008.
• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La203系MOSFETへのMg挿入による電気特性の変化, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 702, Sept. 2008.
• 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. La2O3/Si直接接合構造における界面特性の評価, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 702, Sept. 2008.
• 船水清永, 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 703, Sept. 2008.
• 上村英之, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 大毛利 健二, 服部健雄, 岩井洋. 熱酸化によるSiナノワイヤ形状の酸化条件依存性, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 913, Mar. 2008.
• 岡本晃一, 舘喜一, 足立学, 佐藤創志, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会 予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.
• 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeO2/La2O3積層ゲート絶縁膜の電気特性評価, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 850, Mar. 2008.
• 宋在烈, 舘喜一, 岡本晃一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Er層界面挿入によるNiシリサイドのショットキー障壁変調技術, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 879, Mar. 2008.
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