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若林整 研究業績一覧 (384件)
論文
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An Li,
Takuya Hoshii,
Kazuo Tsutsui,
Hitoshi Wakabayashi,
Kuniyuki Kakushima.
Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma,
Japanese Journal of Applied Physics,
Volume 63,
Number 6,
066503,
June 2024.
公式リンク
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Yukimura Tokita,
Takuya Hoshii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA.
Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy,
Japanese Journal of Applied Physics,
Volume 63,
Number 4,
04SP31,
Apr. 2024.
公式リンク
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Masaki Otomo,
Masaya Hamada,
Ryo Ono,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer,
Japanese Journal of Applied Physics,
IOP Publishing,
Vol. 62,
p. SC1015,
Jan. 2023.
公式リンク
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Takamasa Kawanago,
Ryosuke Kajikawa,
Kazuto Mizutani,
Sung-Lin Tsai,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact,
IEEE Journal of the Electron Devices Society,
IEEE,
Vol. 11,
p. 15-21,
Nov. 2022.
公式リンク
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Iriya Muneta,
Takanori Shirokura,
Pham Nam Hai,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure,
Scientific Reports,
Vol. 12,
pp. 17199,
Oct. 2022.
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Taiga Horiguchi,
Takuya Hamada,
Masaya Hamada,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Hitoshi Wakabayashi.
Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing,
Japanese Journal of Applied Physics,
Vol. 61,
075506,
July 2022.
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M. Nishizawa,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
Yoshiaki Daigo,
Ichiro Mizushima,
T. Yoda,
K. Kakushima.
Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate,
Japanese Journal of Applied Physics,
Vol. 61,
SH1011,
June 2022.
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Si-Meng Chen,
Sung Lin Tsai,
Kazuto Mizutani,
Takuya Hoshii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Edward Yi Chang,
Kuniyuki KAKUSHIMA.
GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation,
Japanese Journal of Applied Physics,
Volume 61,
June 2022.
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Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Tien-Kan Chung,
Edward Yi Chang,
Kuniyuki Kakushima.
Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films,
Japanese Journal of Applied Physics (JJAP),
Vol. 61,
May 2022.
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Atsuki Miyata,
Takuya Hoshii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA.
Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure,
Japanese Journal of Applied Physics,
61,
SH,
SH1005,
Apr. 2022.
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Ryota Shibukawa,
Sung Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA.
Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films,
Japanese Journal of Applied Physics,
Volume 61,
Apr. 2022.
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Ryo Ono,
Shinya Imai,
Yuta Kusama,
Takuya Hamada,
Masaya Hamada,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Emi Kano,
Nobuyuki Ikarashi,
Hitoshi Wakabayash.
Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region,
Japanese Journal of Applied Physics (JJAP),
Vol. 61,
Feb. 2022.
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Takuya Hamada,
Masaya Hamada,
Taiga Horiguchi,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Hitoshi Wakabayashi.
High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement,
Japanese Journal of Applied Physics (JJAP),
Vol. 61,
Feb. 2022.
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Kazuto Mizutani,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Edward Y. Chang,
Kuniyuki Kakushima.
Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement,
Japanese Journal of Applied Physics (JJAP),
Vol. 61,
No. 2,
Feb. 2022.
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Takamasa KAWANAGO,
Takahiro Matsuzaki,
Ryosuke Kajikawa,
Iriya Muneta,
Takuya HOSHII,
Kuniyuki Kakushima,
Kazuo TSUTSUI,
Hitoshi WAKABAYASHI.
Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs,
Japanese Journal of Applied Physics (JJAP),
Vol. 61,
Feb. 2022.
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Takuya Hamada,
Masaya Hamada,
Satoshi Igarashi,
Taiga Horiguchi,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Hitoshi Wakabayashi.
WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box,
Journal of the Electron Devices Society (J-EDS),
Vol. 9,
p. 1117,
Aug. 2021.
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Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Tien-Kan Chung,
Edward Yi Chang,
Kuniyuki Kakushima.
On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films,
Japanese Journal of Applied Physics (JJAP) (SSDM特集号),
Vol. 60,
Page SBBA05,
Apr. 2021.
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Junji Kataoka,
Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
A possible origin of the large leakage current in ferroelectric Al1-xScxN films,
Japanese Journal of Applied Physics (JJAP) (Rapid Communication),
Vol. 60,
Page 30907,
Feb. 2021.
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Shinya Imai,
Takuya Hamada,
Masaya Hamada,
Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication,
Japanese Journal of Applied Physics (JJAP) (SSDM特集号),
Vol. 60,
Page SBBH10,
Feb. 2021.
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S-L. Tsai,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
T-K. Chung,
E. Chang,
K. Kakushima.
Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering,
Applied Physics Letters,
Vol. 118,
No. 8,
Page 82902,
Feb. 2021.
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Jinhan Song,
Atsuhiro Ohta,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer,
Japanese Journal of Applied Physics (JJAP) (Rapid Communication),
Vol. 60,
Page 30901,
Feb. 2021.
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Masaya Hamada,
Kentaro Matsuura,
Takuya Hamada,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact,
Japanese Journal of Applied Physics (JJAP) (SSDM特集号),
Vol. 60,
Page SBBH05,
Jan. 2021.
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Satoshi Igarashi,
Yusuke Mochiduki,
Haruki Tanigawa,
Masaya Hamada,
Kentaro Matsuura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film,
Japanese Journal of Applied Physics (JJAP) (SSDM特集号),
Vol. 60,
Page SBBH04,
Jan. 2021.
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Takuya Hamada,
Shigetaka Tomiya,
Tetsuya Tatsumi,
Masaya Hamada,
Taiga Horiguchi,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing,
Journal of the Electron Devices Society (J-EDS),
Vol. 9,
Page 278-285,
Jan. 2021.
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Junji Kataoka,
Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation,
Applied Physics Express (APEX),
No. 2,
pp. 21002,
Jan. 2021.
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Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Haruki Tanigawa,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation,
Japanese Journal of Applied Physics (JJAP),
Vol. 59,
No. 10,
Page 105501,
Sept. 2020.
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Kiyoshi Takeuchi,
Munetoshi Fukui,
Takuya Saraya,
Kazuo Itou,
Toshihiko Takakura,
Shinichi Suzuki,
Yohichiroh Numasawa,
Naoyuki Shigyo,
Kuniyuki Kakushima,
Takuya Hoshii,
Kazuyoshi Furukawa,
Masahiro Watanabe,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Atsushi Ogura,
Wataru Saito,
Shin-ichi Nishizawa,
Masanori Tsukuda,
Ichiro Omura,
Hiromichi Ohashi,
Toshiro Hiramoto.
Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs,
IEEE Trans. On Semiconductor Manufactureing,
Vol. 33,
No. 2,
pp. 159-165,
May 2020.
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Jinan Song,
Lyu Wei Lin,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection,
Japanese Journal of Applied Physics (JJAP),
Vol. 59,
Apr. 2020.
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Haruki Tanigawa,
Kentaro Matsuura,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks,
Japanese Journal of Applied Physics (JJAP),
Vol. 59,
Apr. 2020.
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Joel Molina-Reyes,
Takuya Hoshii,
Shun-Ichiro Ohmi,
Hiroshi Funakubo,
Atsushi Hori,
Ichiro Fujiwara,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films,
Japanese Journal of Applied Physics,
Vol. 59,
No. SG,
Feb. 2020.
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Joel Molina-Reyes,
Takuya Hoshii,
Shun-Ichiro Ohmi,
Hiroshi Funakubo,
Atsushi Hori,
Ichiro Fujiwara,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films,
Jpn. J. Appl. Phys.,
Vol. 59,
pp. SGGB06-1-6,
Feb. 2020.
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Tomohiko Yamagishi,
Atsushi Hori,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node,
Japanese Journal of Applied Physics,
Vol. 59,
No. SG,
Feb. 2020.
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Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization,
Journal of the Electron Devices Society (J-EDS),
IEEE,
Vol. 7,
No. 1,
pp. 1258-1263,
Dec. 2019.
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Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing,
Applied Physics Letters,
Vol. 115,
p. 192404,
Nov. 2019.
-
Takuya Hoshii,
Akira Nakajima,
Shin-ichi Nishizawa,
Hiromichi Ohashi,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
KAZUO TSUTSUI.
Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates,
Japanese Journal of Applied Physics,
Vol. 58,
No. 6,
pp. 061006,
June 2019.
公式リンク
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Eisuke Anju,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout,
Journal of the Electron Devices Society (J-EDS),
vol. 8,
pp. 1244-1250,
Nov. 2018.
-
K. Matsuura,
J. Shimizu,
M. Toyama,
T. Ohashi,
I. Muneta,
S. Ishihara,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration,
IEEE Journal of the Electron Devices Society,
IEEE,
Vol. 6,
pp. 1251 - 1257,
Nov. 2018.
公式リンク
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J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
N. Ikarashi,
H. Wakabayashi,
N. Ikarashi.
Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing,
Journal of the Electron Devices Society,
Vol. 7,
No. 1,
p. 2,
Oct. 2018.
-
M. Toyama,
T. Ohashi,
K. Matsuura,
J. Shimizu,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing,
JPN J APPL PHYS,
57,
07MA04,
June 2018.
-
Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Investigation on Mo1-xWxS2 Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C4H9)2S2,
JPN J APPL PHYS,
57,
06HB04,
May 2018.
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Yiming Lei,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Masayuki Furuhashi,
Shingo Tomohisa,
Satoshi Yamakaw,
Kuniyuki Kakushima.
Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing,
Microelectronics Reliability,
vol. 84,
pp. 226-229,
May 2018.
-
Yiming Lei,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Masayuki Furuhashi,
Shingo Tomohisa,
Satoshi Yamakawa,
Kuniyuki Kakushima.
Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors,
Microelectronics Reliability,
vol. 84,
pp. 248-252,
May 2018.
-
Akira Nakajima,
Shunsuke Kubota,
Kazuo Tsutsui,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai,
Shin-ichi Nishizawa,
Hiromichi Ohashi.
GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform,
IET Power Electronics,
Vol. 11,
No. 4,
pp. 689-694,
Apr. 2018.
-
K. Matsuura,
T. Ohashi,
I. Muneta,
S. Ishihara,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization,
Journal of Electrical Materials,
Springer US,
Vol. 47,
No. 7,
pp. 3497,
Mar. 2018.
-
N. Hayakawa,
Iriya Muneta,
Takumi Ohashi,
Kenntarou Matsuura,
Junnichi Shimizu,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
Hitoshi Wakabayashi.
Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control,
Japan Journal of Applied Physics,
IOP Publishing,
Vol. 57,
04FP13,
Mar. 2018.
公式リンク
-
Kazuo Tsutsui,
Tomohiro Matsushita,
Kotaro Natori,
Takayuki Muro,
Yoshitada Morikawa,
Takuya Hoshii,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kouichi Hayashi,
Fumihiko Matsui,
Toyohiko Kinoshita.
Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography,
Nano Letters,
Vol. 17,
pp. 7533-7538,
Nov. 2017.
-
"K. Kakushima",
"T. Seki",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai".
Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates,
Vacuum,
Vol. 149,
pp. 14-18,
June 2017.
-
Takumi Ohashi,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness,
Applied Physics Express,
IOP Publishing,
Vol. 10,
Mar. 2017.
公式リンク
-
"Jun’ichi Shimizu",
"Takumi Ohashi",
"Kentaro Matsuura",
"Iriya Muneta",
"Kuniyuki Kakushima",
"Kazuo Tsutsui",
"Hitoshi Wakabayashi".
High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs,
Japanese Journal of Applied Physics (JJAP),
Vol. 56,
No. 4S,
2017.
-
Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
H. Wakabayashi,
A. Ogura.
Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process,
Journal of Materials Research,
Vol. 32,
No. 16,
2017.
-
Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudo,
H. Wakabayashi,
A. Ogura.
Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition,
MRS Advances,
Vol. 2,
No. 29,
2017.
-
S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudo,
H. Wakabayashi,
A. Ogura.
Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor,
MRS Advances,
Vol. 2,
No. 29,
2017.
-
"R. Miyazawa",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"K. Kakushima".
Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells,
International Journal of High Speed Electronics and Systems (IJHSES),
Vol. 25,
No. 1-2,
Page 1640008(7pages),
Sept. 2016.
-
"J. Chen",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"K. Kakushima".
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current,
Microelectronic Reliability,
Vol. 63,
pp. 52-55,
Aug. 2016.
-
"M.S. Hadi",
"N. Sugii",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"K. Kakushima".
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes,
Microelectronics Reliability,
Vol. 63,
pp. 42-45,
Aug. 2016.
-
"Tomoyuki Suzuki",
"Hitoshi Wakabayashi",
"Kazuo Tsutsui",
"Hiroshi Iwai",
"Kuniyuki Kakushima".
Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics,
IEEE Electron Device Letters (EDL),
Vol. 37,
No. 5,
pp. 618-620,
May 2016.
-
Yusuke Takei,
Kazuo Tsutsui,
Wataru Saito,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai.
Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors,
Japanese Journal of Applied Physics,
Vol. 55,
No. 4,
Apr. 2016.
-
S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Wakabayashi,
A. Ogura.
Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast,
ECS J. Solid State Sci. Technol.,
Vol. 5,
No. 11,
2016.
-
"J. Chen",
"T. Kawanago",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"D. Nohata",
"H. Nohira",
"K. Kakushima".
La2O3 gate dielectrics for AlGaN/GaN HEMT,
Microelectronics Reliability,
Vol. 60,
pp. 16-19,
2016.
-
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2,
Japan Journal of Applied Physics,
Vol. 55,
2016.
-
S. Ishihara,
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2,
Japan Journal of Applied Physics,
Vol. 55,
2016.
-
T. Ohashi,
K. Suda,
S. Ishihara,
N. Sawamoto,
S. Yamaguchi,
K. Matsuura,
K. Kakushima,
N. Sugii,
A. Nishiyama,
Y. Kataoka,
K. Natori,
K. Tsutsui,
H. Iwai,
A. Ogura,
H. Wakabayashi.
Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs,
Japan Journal of Applied Physics,
Vol. 54,
No. 4S,
Mar. 2015.
-
"Yusuke Takei",
"Masayuki Kamiya",
"Kazuo Tsutsui",
"Wataru Saito",
"Kuniyuki Kakushima",
"Hitoshi Wakabayashi",
"Yoshinori Kataoka",
"Hiroshi Iwai".
Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers,
Physica Status Solidi A,
Vol. 212,
No. 5,
pp. 1104-1109,
Feb. 2015.
-
Li, W.,
Sasaki, A.,
Oozu, H.,
Aoki, K.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes,
Microelectronics Reliability,
Vol. 55,
No. 2,
pp. 402-406,
2015.
-
Li, W.,
Sasaki, A.,
Oozu, H.,
Aoki, K.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity,
Microelectronics Reliability,
Vol. 55,
No. 2,
pp. 407-410,
2015.
-
"Mokh Hadi",
"Shinichi Kano",
"Kuniyuki Kakushima",
"Yoshinori Kataoka",
"Akira Nishiyama",
"Nobuyuki Sugii",
"Hitoshi Wakabayashi",
"Kazuo Tsutsui",
"Kenji Natori",
"Hiroshi Iwai".
A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer,
Semiconductor Science and Technology,
Vol. 29,
No. 11,
Oct. 2014.
-
"Y. Wu",
"H. Hasegawa",
"K. Kakushima",
"K. Ohmori",
"T. Watanabe",
"A. Nishiyama",
"N. Sugii",
"H. Wakabayashi",
"K. Tsutsui",
"Y. Kataoka",
"K. Natori",
"K. Yamada",
"H. Iwai".
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability,
Microelectronics Reliability,
Vol. 54,
No. 5,
pp. 899-904,
May 2014.
-
"Yusuke Takei",
"Mari Okamoto",
"Wataru Saito",
"Kazuo Tsutsui",
"Kuniyuki Kakushima",
"Hitoshi Wakabayashi",
"Yoshinori Kataoka",
"Hiroshi Iwai".
Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures,
ECS Transactions,
Vol. 61,
No. 4,
pp. 265-270,
May 2014.
-
"Chunmeng Dou",
"Tomoya Shoji",
"Kazuhiro Nakajima",
"Kuniyuki Kakushima",
"Parhat Ahmet",
"Yoshinori Kataoka",
"Akira Nishiyama",
"Nobuyuki Sugii",
"Hitoshi Wakabayashi",
"Kazuo Tsutsui",
"Kenji Natori",
"Hiroshi Iwai".
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement,
Microelectronics Reliability,
Vol. 54,
pp. 725-729,
Apr. 2014.
-
"T. Kawanago",
"K. Kakushima",
"Y. Kataoka",
"A. Nishiyama",
"N. Sugii",
"H. Wakabayashi",
"K. Tsutsui",
"K. Natori",
"H. Iwai".
Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT,
IEEE Transaction on Electron Devices(T-ED),
Vol. 61,
No. 3,
pp. 785-791,
Feb. 2014.
-
"K. Tuokedaerhan",
"K. Kakushima",
"Y. Kataoka",
"A. Nishiyama",
"N. Sugii",
"H. Wakabayashi",
"K. Tsutsui",
"K. Natori",
"H. Iwai".
Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain,
Applied Physics Letters (APL),
Vol. 104,
No. 2,
Jan. 2014.
-
Dou, C.,
Shoji, T.,
Nakajima, K.,
Kakushima, K.,
Ahmet, P.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement,
Microelectronics Reliability,
Vol. 54,
No. 4,
pp. 725-729,
2014.
-
Tuokedaerhan, K.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain,
Applied Physics Letters,
Vol. 104,
No. 2,
2014.
-
Hadi, M.S.,
Kano, S.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
A resistive switching device based on breakdown and anodic reoxidization of thin SiO2on Si-based electrodes using CeOxbuffer layer,
Semiconductor Science and Technology,
Vol. 29,
No. 11,
2014.
-
"K. Tuokedaerhan",
"R. Tan,
K. Kakushima",
"P. Ahmet",
"Y. Kataoka",
"A. Nishiyama",
"N. Sugii",
"H. Wakabayashi",
"K. Tsutsui",
"K. Natori",
"T. Hattori",
"H. Iwai".
Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application,
Applied Physics Letters (APL),
Vol. 103,
Sept. 2013.
国際会議発表 (査読有り)
-
Ryosuke Kajikawa,
Takamasa Kawanago,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs,
International Conference on Solid State Devices and Materials,
Sept. 2023.
-
Iriya Muneta,
Takanori Shirokura,
Pham Nam Hai,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure,
Intermag 2023,
May 2023.
-
Ryo Ono,
Shinya Imai,
Takamasa Kawanago,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Hitoshi Wakabayashi.
Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film,
IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
Mar. 2023.
公式リンク
-
Shinya Imai,
Ryo Ono,
Iriya Muneta,
Kuniyuki Kakushima,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid,
IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
Mar. 2023.
公式リンク
-
Shonosuke Kimura,
Takuya Hoshii,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma,
the International Workshop on Nitride Semiconductors 2022,
Oct. 2022.
-
Kazuto Mizutani,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films,
International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
-
Mitsuki Nishizawa,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
I. Mizushima,
T. Yoda,
K. Kakushima.
Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer,
International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
-
Si-Meng Chen,
Sung-Lin Tsai,
Kazuto Mizutani,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation,
International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
-
Sho Sasaki,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
Observation of ferroelectricity in atomic layer deposited AlN film,
International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
-
Takuya Hamada,
Taiga Horiguchi,
Masaya Hamada,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Hitoshi Wakabayashi.
Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering,
Internatonal Conference on Solid State Devices and Materials,
Sept. 2021.
-
Ryo Ono,
Shinya Imai,
Yuta Kusama,
Takuya Hamada,
Masaya Hamada,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Nobuyuki Ikarashi,
Hitoshi Wakabayashi.
Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region,
International Conference on Solid State Devices and Materials,
Sept. 2021.
-
Takamasa Kawanago,
Takahiro Matsuzaki,
Ryosuke Kajikawa,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs,
International Conference on Solid State Devices and Materials,
Sept. 2021.
-
Masaya Hamada,
Takuya Hamada,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node,
International Workshop on Junction Technology (IWJT2021),
June 2021.
-
Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Katsumi Satoh,
Tomoko Matsudai,
Takuya Saraya,
Iriya Muneta,
Hitoshi Wakabayashi,
Akira Nakajima,
Shin-ichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices,
IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021),
Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021),
pp. 217-219,
Apr. 2021.
-
S. Tsai,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes,
Electrochemical Society (ECS) PRIME 2020,
Oct. 2020.
-
Sunglin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films,
International Conference of Solid State Devices and Materials (SSDM) 2020,
Sept. 2020.
-
Shinya Imai,
Takuya Hamada,
Masaya Hamada,
Takanori Shirokura,
Shigetaka Tomiya,
Iriya Muneta,
Kuniyuki Kakushima,
Tetsuya Tatsumi,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication,
International Conference of Solid State Devices and Materials (SSDM) 2020,
Sept. 2020.
-
Masaya Hamada,
Kentaro Matsuura,
Takuya Hamada,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack,
International Conference of Solid State Devices and Materials (SSDM) 2020,
Sept. 2020.
-
Satoshi Igarashi,
Yusuke Mochiduki,
Haruki Tanigawa,
Masaya Hamada,
Kentaro Matsuura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing,
International Conference of Solid State Devices and Materials (SSDM) 2020,
Sept. 2020.
-
H. Tanigawa,
K. Matsuura,
I. Muneta,
T. Hoshii,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks,
Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019),
Nov. 2019.
-
T. Kinoshita,
T. Matsushita,
T. Muro,
T. Ohkochi,
H. Osawa,
K. Hayashi,
F. Matsui,
K.Tsutsui,
K. Natori,
Y. Morikawa,
T. Hoshii,
K. Kakushima,
H. Wakabayashi,
A. Takeda,
K. Terashima,
W. Hosoda,
T. Fukura,
Y. Yano,
H. Fujiwara,
M. Sunagawa,
H. Kato,
T. Oguchi,
T. Wakita,
Y. Muraoka,
T. Yokoya.
Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites,
T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya,
Nov. 2019.
-
Ryunosuke Otsuki,
Yuta Suzuki,
Takuro Sakamoto,
Takanori Shirokura,
Iriya Muneta,
Masahiro Nagao,
Hitoshi Wakabayashi,
Nobuyuki Ikarashi.
Structural analysis of MoS2 films fabricated by radiofrequency sputtering using highangle annular dark field scanning transmission electron microscopy,
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019),
Nov. 2019.
-
Kazuo Tsutsui,
Tomohiro Matsushita,
Takayuki Muro,
Yoshitada Morikawa,
Kotaro Natori,
Takuya Hoshii,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kouichi Hayashi,
Fumihiko Matsui,
Toyohiko Kinoshita.
3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography,
8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8),
Nov. 2019.
-
Takuya Hoshii,
Hiromasa Okita,
Taihei Matsuhashi,
Indraneel Sanyal,
Yu-Chih Chen,
Ying-Hao Ju,
Akira Nakajima,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Jen-Inn Chyi,
Kazuo Tsutsui.
Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE,
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019),
Nov. 2019.
-
Y. W. Lin,
J. Song,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology,
Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019),
Nov. 2019.
-
Jinhan Song,
A. Ohta,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices,
Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019),
Nov. 2019.
-
T. Hiramoto,
T. Saraya,
K. Itou,
T. Takakura,
M. Fukui,
S. Suzuki,
K. Takeuchi,
M. Tsukuda,
Y. Numasawa,
K. Satoh,
T. Matsudai,
W. Saito,
K. Kakushima,
T. Hoshii,
K. Furukawa,
M. Watanabe,
N. Shigyo,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
A. Ogura,
S. Nishizawa,
I. Omura,
H. Ohash.
Switching of 3300V Scaled IGBT by 5V Gate Drive,
ASICON (International Conference on ASIC),
Oct. 2019.
-
Joel Molina-Reyes,
Takuya Hoshii,
Shun-Ichiro Ohmi,
Hiroshi Funakubo,
Atsushi Hori,
Ichiro Fujiwara,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing,
Solid State Devices and Materials (SSDM2019),
Sept. 2019.
-
Tomohiko Yamagishi,
Atsushi Hori,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET,
Int. Conf. on Solide State Devices and Materials (SSDM2019),
Sept. 2019.
-
Takuya Hoshii,
Akira Nakajima,
Shin-ichi Nishizawa,
Hiromichi Ohashi,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces,
13tu Int. Conf. on Nitride Semiconductor (ICNS),
July 2019.
-
K. Matsuura,
M. Hamada,
T. Hamada,
H. Tanigawa,
T. Sakamoto,
W. Cao,
K. Parto,
A. Hori,
I. Muneta,
T. Kawanago,
K. Kakushima,
K. Tsutsui,
A. Ogura,
K. Banerjee,
H. Wakabayashi.
Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration,
Int. Workshop on Juction Technology (IWJT2019),
June 2019.
-
Iriya Muneta,
Naoki Hayakawa,
Takanori Shirokura,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Ferromagnetic tunnel devices with two-dimensional layered material MoS2,
Collaborative Conference on Materials Research (CCMR) 2019,
June 2019.
-
Takuya Saraya,
Kazuo Itou,
Toshihiko Takakura,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Masanori Tsukuda,
Yohichiroh Numasawa,
Katsumi Satoh,
Tomoko Matsudai,
Wataru Saito,
Kuniyuki Kakushima,
Takuya Hoshii,
Kazuyoshi Furukawa,
Masahiro Watanabe,
Naoyuki Shigyo,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Atsushi Ogura,
Shin-Ichi Nishizawa,
Ichiro Omura,
Hiromichi Ohashi,
Toshiro Hiramo.
3300V Scaled IGBTs Driven by 5V Gate Voltag,
31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019),
May 2019.
-
Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Katsumi Satoh,
Tomoko Matsudai,
Takuya Saraya,
Toshihiro Takakura,
Kazuo Itou,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Iriya Muneta,
Hitoshi Wakabayashi,
Akira Nakajima,
Shin-ichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs,
31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019),
May 2019.
-
Takeya Inoue,
Takuya Hoshii,
Takuo Kikuchi,
Hidehiko Yabuhara,
Kazuyuki Ito,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai,
Junichi Tonotani,
Kazuo Tsutsui.
Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices,
3rd Electron Devices Technology and Manufactureing Conference (EDTM2019),
Mar. 2019.
-
Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing,
3rd Electron Devices Technology and Manufactureing Conference (EDTM2019),
Mar. 2019.
-
K. Sasaki,
J. Song,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
I. Mizushima,
T. Yoda,
K. Kakushima.
Minority Carrier Lifetime Measurement for SiC Epitaxial Layer,
The 5th Meeting on Advanced Power Semiconductors,
Nov. 2018.
-
Y. Oyanagi,
Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Fabrication of WS2 Film by DC Bias Applied High-Temperature Sputtering,
MRS Fall Meeting & Exhibit,
Nov. 2018.
-
S. Ishihara,
Y. Hibino,
Y. Oyanagi,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Stimulating Raman Spectra of Sputtering Deposited Polycrystalline MoS2 Films by Phonon Confinement Model,
MRS Fall Meeting & Exhibit,
Nov. 2018.
-
T. Sakamoto,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
Y. Suzuki,
N. Ikarashi,
H. Wakabayashi.
Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy,
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),
Oct. 2018.
-
Toyohiko Kinoshita,
Tomohiro Matsushita,
Takayuki Muro,
Takuo Ohkochi,
Hitoshi Osawa,
Kouichi Hayashi,
Fumihiko Matsui,
Kazuo Tsutsui,
Kotaro Natori,
Yoshitada Morikawa,
Takuya Hoshii,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Aya Taked,
Kensei Terashim,
Wataru Hosoda,
Tetsuji Fukura,
Yuukou Yano,
Hirohkazu Fujiwara,
Masanori Sunagawa,
Hiromitsu Kato,
Tamio Oguchi,
Takanori Wakita,
Yuuji Muraoka,
Takayoshi Yokoya.
Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites,
14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14),
Oct. 2018.
-
M. Hamada,
K. Matsuura,
T. Sakamoto,
H. Tanigawa,
T. Ohashi,
I. Muneta,
T. Hoshii,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film,
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),
Oct. 2018.
-
S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Centimeter-scale high-performance few-layer MoS2 fabricated by RF magnetron sputtering and subsequent post-deposition annealing,
International Conference on Solid State Devices and Materials,
Sept. 2018.
-
Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Saraya,
Toshihiko Takakura,
Kazuo Itou,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Iriya Muneta,
Hitoshi Wakabayashi,
Sinichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately,
44th European Solid-State Circuits Conference (ESSDERC2018),
Sept. 2018.
-
Kazuya Hisatsune,
Yoshihisa Takaku,
Kohei Sasa,
Takuya Hoshii,
Iriya Muneta,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors,
Int. Conf. on Sold State Devices and Materials (SSDM2018),
Sept. 2018.
-
I. Muneta,
Danial B. Z.,
N. Hayakawa,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate,
International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS),
Aug. 2018.
-
S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Low-temperature solid-phase crystallization of sputtering deposited quasi-layered MoS2 thin film,
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18),
Aug. 2018.
-
K. Kakushima,
T. Hoshii,
M. Watanabe,
N. Shigyo,
K. Furukawa,
T. Saraya,
T. Takakura,
K. Itou,
M. Fukui,
S. Suzuki,
K. Takeuchi,
I. Muneta,
H. Wakabayashi,
Y. Numasawa,
A. Ogura,
S. Nishizawa,
K. Tsutsui,
T. Hiramoto,
H. Ohashi,
H. Iwai.
New methodology for evaluating minority carrier lifetime for process assessment,
Symp. On VLSI Technology (VLSI2018),
June 2018.
-
Y. Hibino,
S. Ishihara,
Y. Oyanagi,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Wakabayashi,
A. Ogura.
Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias,
ECS Transactions,
vol. 85,
no. 13,
531,
May 2018.
-
S. Ishihara,
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor,
MRS Spring Meeting & Exhibit,
Mar. 2018.
-
K. Matsuura,
J. Shimizu,
M. Toyama,
T. Ohashi,
I. Muneta,
S. Ishihara,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate,
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM),
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings,
pp. 104-106,
Mar. 2018.
-
Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Investigation of MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition,
MRS Spring Meeting & Exhibit,
Mar. 2018.
-
Suguru Tatsunokuchi,
I. Muneta,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
HIROSHI IWAI,
K. Kakushima.
Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure,
China Semiconductor Technology International Conference (CSTIC2018),
Mar. 2018.
-
Eisuke Anju,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout,
The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018),
Mar. 2018.
-
Kotaro Natori,
Tatsuhiro Ogawa,
Takuya Hoshii,
Tomohiro Matsushia,
Takayuki Muro,
Toyohiko Kinoshita,
Yoshitada Morikawa,
Kuniyuki Kakushima,
Fumihiko Matsui,
Kouichi Hayashi,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography,
11th Int. Symp. on Atomic Level Characterization (ALC'17),
Dec. 2017.
-
Suguru Tatsunokuchi,
Iriya Muneta,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Kuniyuki Kakushima.
Photovoltaic Properties of Lateral Si Nano Wall Solar Cells,
2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017),
Nov. 2017.
-
M. Toyama,
T. Ohashi,
K. Matsuura,
J. Shimizu,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing,
Advanced Metallization Conference 2017: 27th Asian Session,
Oct. 2017.
公式リンク
-
Takuya Hoshii,
Rumi Takayama,
Akira Nakajima,
Shin-ichi Nishizawa,
Hiromichi Ohashi,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate,
International Conference on Solid-State Devices and Materials (SSDM2017),
Sept. 2017.
-
N. Hayakawa,
I. Muneta,
T. Ohashi,
K. Matsuura,
J. Shimizu,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure,
International Conference on Solid State Devices and Materials,
Sept. 2017.
-
K. Kakushima,
T. Suzuki,
T. Hoshii,
I. Muneta,
H. Wakabayashi,
HIROSHI IWAI,
Y. Aoki,H. Nohira Aoki,
KAZUO TSUTSUI.
Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes,
Int. Workshop on Junction Technology (IWJT2017),
June 2017.
-
K. Kakushima,
Yuta Ikeuchi,
T. Hoshii,
I. Muneta,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
T. Kikuchi,
S. Ishikawa.
Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes,
Int. Workshop on Junction Technology (IWJT2017),
June 2017.
-
J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
N. Ikarashi,
H. Wakabayashi.
Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET,
IEEE Electron Device Technology and Manufacturing Conference (EDTM),
2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM),
pp. 222-223,
June 2017.
公式リンク
-
S. Hirano,
J. Shimizu,
K. Matsuura,
T. Ohashi,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films,
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM),
pp. 234-235,
June 2017.
公式リンク
-
岡田 泰典,
山口 晋平,
大橋 匠,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas,
International Workshop on Junction Technology,
June 2017.
-
Okada, Y.,
Yamaguchi, S.,
Ohashi, T.,
Muneta, I.,
Kasushima, K.,
Tsutsui, K.,
Hitoshi Wakabayashi.
Resistivity reduction of low-carrier-density sputtered-MoS2film using fluorine gas,
17th International Workshop on Junction Technology, IWJT 2017,
pp. 44-46,
2017.
-
Y. M. Lei,
T. Kaneko,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
K. Kakushima,
M. Furuhashi,
S. Tomohisa,
S. Yamakawa.
Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors,
47th IEEE Semiconductor Interface Specialists Conference (SISC2016),
Dec. 2016.
-
Y. Ikeuchi,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
K. Kakushima,
S.Ishikawa.
Characteristics of Fe/pGaN Contact upon Annealing Process,
47th IEEE Semiconductor Interface Specialists Conference (SISC2016),
Dec. 2016.
-
Tomoyuki Suzuki,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Hiroshi Nohira,
Kuniyuki Kakushima.
Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode,
47th IEEE Semiconductor Interface Specialists Conference (SISC2016),
Dec. 2016.
-
K. Kakushima,
T. Hoshii,
K. Tsutsui,
A. Nakajima,
S. Nishizawa,
H. Wakabayashi,
I. Muneta,
K. Sato,
T. Matsudai,
W. Saito,
T. Saraya,
K. Itou,
M. Fukui,
S. Suzuki,
M. Kobayashi,
T. Takakura,
T. Hiramoto,
A. Ogura,
Y. Numasawa,
I. Omura,
H. Ohashi,
H. Iwai.
Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT,
62th International Electron Devices Meeting (IEDM2016),
p. 268,
Dec. 2016.
-
J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC,
International Conference on Solid State Devices and Materials,
Sept. 2016.
-
Akira Nakajima,
Shunsuke Kubota,
Kazuo Tsutsui,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai,
Sin-ichi Nishizawa,
Hiromichi Ohashi.
Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs,
13th International Seminar on Power Semiconductors (ISPS),
Aug. 2016.
-
K. Matsuura,
T. Ohashi,
I. Muneta,
S. Ishihara,
N. Sawamoto,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film,
Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC),
2016.
-
A. Nakajima,
S. Kubota,
R. Kayanuma,
K. Tsutsui,
K. Kakushima,
H. Wakabayashi,
H. Iwai,
S. Nishizawa,
H. Ohashi.
An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform,
2015 IEEE Compound Semiconductor IC Symposium (CSICS2015),
Oct. 2015.
-
Akira Nakajima,
Shin-Ichi Nishizawa,
Hiromichi Ohashi,
Rei Kayanuma,
Kazuo Tsutsui,
Shunsuke Kubota,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai.
GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform,
The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015),
May 2015.
-
Imamura, H.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Influence of sputtering gas on resistivity of thin Ni silicide films,
China Semiconductor Technology International Conference 2015, CSTIC 2015,
2015.
-
S. Ishihara,
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Fabrication of High-Quality Single- and Few-Layer MoS2 Films by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing,
MRS Fall Meeting & Exhibit,
2015.
-
Nakajima, A.,
Nishizawa,
S.-I.,
Kubota, S.,
Kayanuma, R.,
Tsutsui, K.,
Ohashi, H.,
Kakushima, K.,
Hitoshi Wakabayashi,
Iwai, H..
An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform,
2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015,
2015.
-
S. Ishihara,
K. Suda,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
S. Yamaguchi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2,
International Conference on Solid State Devices and Materials,
2015.
-
Nakajima, A.,
Nishizawa,
S.-I.,
Ohashi, H.,
Kayanuma, R.,
Tsutsui, K.,
Kubota, S.,
Kakushima, K.,
Hitoshi Wakabayashi,
Iwai, H..
GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform,
Proceedings of the International Symposium on Power Semiconductor Devices and ICs,
Vol. 2015-June,
pp. 357-360,
2015.
-
Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Low Temperature Formation of Layered MoS2 by Sulfurization of E-Beam Evaporated Mo Thin Film Using (t-C4H9)2S2,
MRS Fall Meeting & Exhibit,
2015.
-
Baba, T.,
Kakushima, K.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Iwai, H..
An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT,
WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications,
pp. 125-128,
2015.
-
S. Ishihara,
K. Suda,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
S. Yamaguchi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy,
MRS Proceedings,
1781,
11,
2015.
-
M. Okamoto,
K. Kakushima,
Y. Kataoka,
K. Natori,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
W. Saito.
Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure,
WiPDA,
Oct. 2014.
-
T. Shoji,
K. Kakushima,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
H. Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells,
29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014),
Sept. 2014.
-
Kazuo Tsutsui,
Masayuki Kamiya,
Yusuke Takei,
Wataru Saito,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Yoshinori Kataoka,
Hiroshi Iwai.
Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers,
The International Workshop on Nitride Semiconductors (IWN2014),
Aug. 2014.
-
Y. Takei,
M. Okamoto,
W. Saito,
K. Tsutsui,
K. Kakushima,
H. Wakabayashi,
Y. Kataoka,
H. Iwai.
Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures,
225th ECS Meeting,
May 2014.
-
T. Ohashi,
H. Wakabayashi,
K. Kakushima,
N. Sugii,
A. Nishiyama,
Y. Kataoka,
K. Natori,
K. Tsutsui,
H. Iwai.
Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
Okamoto, M.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Iwai, H.,
Saito, W..
Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure,
2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014,
pp. 94-97,
2014.
-
Akira Nakajima,
Sin-ichi Nishizawa,
Hiromichi Ohashi,
Hiroaki Yonezawa,
Kazuo Tsutsui,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai.
One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors,
The 26th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2014),
2014.
-
DARYOUSH ZADEH,
Hiroshi Oomine,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction,
IEDM 2013,
2014.
-
Lei, Y.M.,
Munekiyo, S.,
Kawanago, T.,
Kakushima, K.,
Kataoka, K.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H.,
Furuhashi, M.,
Miura, N..
Enhanced oxidation of sic substrates using La2O3capped annealing and a proposal for uniform LaSiON gate dielectric formation,
2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014,
pp. 110-113,
2014.
-
T. Ohashi,
K. Suda,
S. Ishihara,
N. Sawamoto,
S. Yamaguchi,
K. Matsuura,
K. Kakushima,
N. Sugii,
A. Nishiyama,
Y. Kataoka,
K. Natori,
K. Tsutsui,
H. Iwai,
A. Ogura,
Hitoshi Wakabayashi.
Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs,
International Conference on Solid State Devices and Materials,
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials,
1074,
2014.
-
T. Ohashi,
S. Yamaguchi,
K. Matsuura,
H. Wakabayashi.
Sputtered MoS2 Film for Future High-Performance Nanoelectronic Devices,
The 7th Thailand-Japan International Academic Conference, Material Engineering and Technology,
2014.
-
Hitoshi Wakabayashi.
Progress and benchmarking of CMOS-device technologies,
2014 International Conference on Electronics Packaging, ICEP 2014,
pp. 434-437,
2014.
-
Munekiyo, S.,
Lei, Y.M.,
Natori, K.,
Iwai, H.,
Kawanago, T.,
Kakushima, K.,
Kataoka, K.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Furuhashi, M.,
Miura, N.,
Yamakawa, S..
Passivation of SiO2/SiC interface with La2O3capped oxidation,
2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014,
pp. 114-116,
2014.
-
Atsushi Takemasa,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes,
China Semiconductor Technology International Conference (CSTIC) 2014,
2014.
-
Shuhei Hosoda,
Kamale Tuokedaerhan,
Kuniyuki Kakushima,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kenji Natori,
Hiroshi Iwai.
Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode,
224th ECS Meeting in San Francisco,
Oct. 2013.
-
Hitoshi Wakabayashi.
Progress and prospects of silicon transistors based on junction technologies,
Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013,
pp. 98-103,
2013.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,
ESSDERC 2013,
2013.
-
ダリューシュザデ,
Hiroshi Oomine,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density,
2013 International Conference on Solid State Devices and Materials(SSDM),
2013.
-
unknown unknown,
shinichi kano,
竇春萌,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer,
2013 International Conference on Solid State Devices and Materials(SSDM),
2013.
国内会議発表 (査読有り)
-
Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Magnetic property in sputtered MoS2 thin film on growth temperature,
第23回 半導体におけるスピン工学の基礎と応用(PASPS-23),
Dec. 2018.
-
米田 允俊,
武田 さくら,
田口 宗孝,
松田 博之,
大橋匠,
清水 淳一,
Artoni Kevin Roquero Ang,
橋本 由介,
深見 駿,
田中 一光,
岡本 隆志,
江波戸 達哉,
大門 寛,
若林整,
木下 豊彦.
スパッタ法で作成されたMoS2薄膜のRHEEDと光電子分光による評価,
表面科学学術講演会要旨集,
公益社団法人 日本表面科学会,
Vol. 36,
pp. 164,
2016.
-
若林整.
新版 ULSIデバイス・プロセス技術, 菅野卓雄(監修), 伊藤隆司(編著), 電子情報通信学会, 2013-05, A5判, 定価(本体5,600円+税),
電子情報通信学会誌,
一般社団法人電子情報通信学会,
Vol. 96,
No. 11,
pp. 897,
Nov. 2013.
国際会議発表 (査読なし・不明)
-
A. Miyata,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation,
Electrochemical Society (ECS) PRIME 2020,
Oct. 2020.
-
"Atsuhiro Ohta,
J. Song,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima".
Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics,
Electrochemical Society (ECS) PRIME 2020,
Oct. 2020.
-
H. Nishida,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
A simulation study on the transient leakage current analysis of a GaN epitaxial layer,
Electrochemical Society (ECS) PRIME 2020,
Oct. 2020.
-
"Kazuto Mizutani,
Yu-Wei Lin,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima".
Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling,
Electrochemical Society (ECS) PRIME 2020,
Oct. 2020.
-
Y.-W. Lin,
K. Mizutani,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
Y.-F. Tsao,
T.-J. Huang,
H.-T. Hsu,
K. Kakushima.
Ferroelectric HfO2 Capacitors for Varctor Application in GHz,
Electrochemical Society (ECS) PRIME 2020,
Oct. 2020.
-
Kazuto Mizutani,
Yu Wei Lin,
Takuya Hoshii,
Hiroshi Funakubo,
Hitoshi Wakabayashi,
Kazuto Tsutsui,
Kuniyuki Kakushima.
Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing,
2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications),
Aug. 2020.
-
J. Molina,
T. Mimura,
Y. Nakamura,
T. Shimizu,
H. Funakubo,
I. Fujiwara,
T. Hoshii,
S. Ohmi,
A. Hori,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance,
2020 IMW (The 12th International Memory Workshop),
May 2020.
-
Takuya Hamada,
Shinpei Yamaguchi,
Taiga Horiguchi,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film,
Material Resarch Meeing 2019 (MRM2019),
Dec. 2019.
-
K. Tsutsui,
K. Natori,
T. Ogawa,
T. Muro,
T. Matsuishita,
Y. Morikawa,
T. Hoshii,
K. Kakushima,
H. Wakabayashi,
K. Hayashi,
F. Matsui,
T. Kinoshita.
Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography,
Material Resarch Meeing 2019 (MRM2019),
Dec. 2019.
-
Joel Molina-Reyes,
Haruki Iwatsuka,
Takuya Hoshii,
Shun-Ichiro Ohmi,
Hiroshi Funakubo,
Atsushi Hori,
Ichiro Fujiwara,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing,
VLSI 2019 (2019 Symposia on VLSI Technology and Circuits),
June 2019.
-
J. Molina,
H. Iwatsuka,
T. Hoshii,
S. Ohmi,
H. Funakubo,
A. Hori,
I. Fujiwara,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode,
235th ECS Meeting,
May 2019.
-
K. Hisatsune,
T. Hoshii,
I. Muneta,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors,
235th ECS Meeting,
May 2019.
-
K. Sasaki,
J. Song,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
I. Mizushima,
T. Yoda,
K. Kakushima.
Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer,
235th ECS Meeting,
May 2019.
-
Takuya Hoshii,
Shuma Tsuruta,
Akira Nakajima,
Shin-ichi Nishizawa,
Hiromichi Ohashi,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform,
International Workshop on Nitride Semiconductors (IWN2018),
Nov. 2018.
-
Takuya Hamada,
Hayato Mukai,
Tokio Takahashi,
Toshihide Ide,
Mitsuaki Shimizu,
Hiroki Kuroiwa,
Takuya Hoshii,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai,
Kazuo Tsutsui.
Electrical properties of selectively grown GaN channel for FinFETs,
International Workshop on Nitride Semiconductors (IWN2018),
Nov. 2018.
-
Kazuo Tsutsui,
Tomohiro Matsushita,
Takayuki Muro,
Yoshitada Morikawa,
Kotaro Natori,
Takuya Hoshii,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kouichi Hayashi,
Fumihiko Matsui,
Toyohiko Kinoshita.
Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography,
International Conference on Solid-State Devices and Materials (SSDM2018),
Sept. 2018.
-
D. Saito,
I. Muneta,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
K. Kakushima.
Reliability of SiC Schottky Diodes with Mo2C Electrode,
ECS Meeting,
May 2018.
-
C. Y. Su,
T. Hoshii,
I. Muneta,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
K. Kakushima.
Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3,
ECS Meeting,
May 2018.
-
H. Kataoka,
H. Iwai,
T. Hoshii,
I. Muneta,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
K. Kakushima.
A Defect Density Profile Extraction Method for GaN Epi-Wafers,
ECS Meeting,
Apr. 2018.
-
Kazuo Tsutsui,
Tomohiro Matsushita,
Takayuki Muro,
Yoshitada Morikawa,
Kotaro Natori,
Takuya Hoshii,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kouichi Hayashi,
Fumihiko Matsui,
Toyohiko Kinoshita.
Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique,
Intnational Workshop on Junction Technology (IWJT2018),
Mar. 2018.
-
K. Tsutsui,
K. Kakushima,
T. Hoshii,
A. Nakajima,
S. Nishizawa,
H. Wakabayashi,
I. Muneta,
K. Sato,
T. Matsudai,
W. Saito,
T. Saraya,
K. Itou,
M. Fukui,
S. Suzuki,
M. Kobayashi,
T. Takakura,
T. Hiramoto,
A. Ogura,
Y. Numasawa,
I. Omura,
H. Ohashi,
H. Iwai.
3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat),
ASICON2017,
Proceedings of International Conference on ASIC,
Vol. 2017-October,
pp. 1137-1140,
Oct. 2017.
公式リンク
-
Yusuke Takei,
Tomohiro Shimoda,
Wataru Saito,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai.
Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns,
2015 Material Research Society (MRS) Fall Meeting,
Nov. 2015.
-
Shunsuke Kubota,
Rei Kayanuma,
Akira Nakajima,
Shin-ichi Nishizawa,
Shin-ichi Nishizawa,
Hiromichi Ohashi,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation,
2015 Material Research Society (MRS) Fall Meeting,
Nov. 2015.
-
Minjae Yoon,
K. Terayama,
A. Nakajima,
S. Nichizawa,
H. Ohasi,
K. Kakushima,
H. Wakabayashi,
K. Tsutsui,
H. Iwai.
Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
H. Hasegawa,
Y.Wu,
J.Song,
K. Kakushima,
Y.Kataoka,
A. Nishiyama,
N. Sugii,
H. Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
Y. Nakamura,
K. Kakushima,
Y. Kataoka,
A. Nishiyama,
H. Wakabayashi,
N. Sugii,
K. Tsutsui,
K. Natori,
H. Iwai.
Measurement of flat-band voltage shift using multi-stacked dielectric film,
The Workshop on Future Trend of Nanoelectronics: WIMNACT,
Feb. 2014.
-
M. Okamoto,
K. Kakushima,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
W. Saito.
An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
M. Motoki,
K. Kakushima,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
H.Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama,
Feb. 2014.
-
T. Kato,
T.Inamura,
A.Sasaki,
K.Aoki,
K.Kakushima,
Y.Kataoka,
A. Nishiyama,
N. Sugii,
H.Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Thickness-dependent electrical characterization of β‐FeSi2,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
K. Terayama,
A. Nakajima,
S. Nishizawa,
H. Ohasi,
K. Kakushima,
H. Wakabayashi,
K. Tsutsui,
H. Iwai.
Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
Y. Ito,
H. Hori,
K. Tsutsui,
K. Kakushima,
H. Wakabayashi,
Y.Kataoka,
A.Nishiyama,
N. Sugii,
K. Natori,
H. Iwai.
Proposal of junction formation process for solar cells made of silicon microstructures,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
M. Kamiya,
Y. Takei,
W. Saito,
K. Kakushima,
H. Wakabayashi,
Y. Kataoka,
K. Tsutsui,
H. Iwai.
Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
Hiroki Hasegawa,
Y. Wu,
宋 禛漢,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Masayuki Kamiya,
Yusuke Takei,
齋藤渉,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
Yoshinori Kataoka,
HIROSHI IWAI.
Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Yusuke Takei,
Mari Okamoto,
S. Man,
Ryosuke Kayanuma,
Masayuki Kamiya,
齋藤渉,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
Yoshinori Kataoka,
HIROSHI IWAI.
Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures,
The Workshop on Future Trend of Nanoelectronics:WIMNACT,
2014.
-
Yoshihiro Matsukawa,
Mari Okamoto,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Takafumi Katou,
Taichi Inamura,
佐々木亮人,
青木克明,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Electrical characteristic of b-FeSi2,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
雷 一鳴,
Shu Munekiyo,
Kuniyuki KAKUSHIMA,
Takamasa Kawanago,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI,
M. Furuhashi,
N. Miura,
S. Yamakawa.
Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan,
2014.
-
Masaaki Motoki,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Yoshinori Nakamura,
Kuniyuki KAKUSHIMA,
片岡好則,
Akira Nishiyama,
Hitoshi Wakabayashi,
Nobuyuki Sugii,
HIROSHI IWAI.
Measurement of flat-band voltage shift using multi-stacked dielectric film,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Tomoya Shoji,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Hiroaki Imamura,
Taichi Inamura,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
宋 禛漢,
Kazuki Matsumoto,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films,
J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan,
2014.
-
吉原亮,
Masaaki Motoki,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Interface control process toward un-pinned metal/germanium Schottky contact,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Shuhei Hosoda,
Kamale Tuokedaerhan,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Atomically flat interface of La-silicate/Si with W2C gate electrodes,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
関拓也,
Kuniyuki KAKUSHIMA,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111),
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Hiroshi Oomine,
DARYOUSH ZADEH,
Kuniyuki KAKUSHIMA,
Akira Nishiyama,
Nobuyuki Sugii,
片岡好則,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Effect of pretreatment for high-/k//InGaAs interface property,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Taichi Inamura,
Takafumi Katou,
佐々木亮人,
青木克明,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A study on silicide semiconductors for high efficiency thin film photovoltaic devices,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Jiangning Chen,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI,
齋藤渉.
Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
wei li,
佐々木亮人,
大図秀行,
青木克明,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
K. Tuokedaerhan,
Shuhei Hosoda,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan,
2014.
-
Y. Wu,
Hiroki Hasegawa,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
片岡好則,
Kenji Natori,
HIROSHI IWAI.
Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
unknown unknown,
竇春萌,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Y. Wu,
Hiroki Hasegawa,
Kuniyuki KAKUSHIMA,
大毛利健治,
T. Watanabe,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
片岡好則,
Kenji Natori,
Keisaku Yamada,
HIROSHI IWAI.
Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance,
2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-,
2014.
-
K. Tuokedaerhan,
Shuhei Hosoda,
Yoshinori Nakamura,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics,
2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY,
2014.
-
Mari Okamoto,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
HIROSHI IWAI.
An Ohmic Contact Process for AlGaN/GaN Structures using TiS,
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications,
2014.
-
中島 昭,
Hiroaki Yonezawa,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA,
西澤伸一,
大橋弘通,
Hitoshi Wakabayashi,
HIROSHI IWAI.
One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors,
The 26th International Symposium on Power Semiconductor Devices and ICs(ISPSD 2014),
2014.
-
Takumi Ohashi,
Hitoshi Wakabayashi,
Kuniyuki KAKUSHIMA,
Nobuyuki Sugii,
Akira Nishiyama,
Yoshinori Kataoka,
Kenji Natori,
KAZUO TSUTSUI,
HIROSHI IWAI.
Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Hayato Hori,
Yuuma Itou,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
HIROSHI IWAI.
Effects of substrate back bias on solar cells formed on thin SOI structures,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Sin Man,
Rei Kayanuma,
Yusuke Takei,
T. Takahashi,
M. Shimizu,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
Yoshinori Kataoka,
HIROSHI IWAI.
A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Kazuma Terayama,
中島 昭,
西澤伸一,
大橋弘通,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
HIROSHI IWAI.
Caluculation of ultimate on-resistance in GaN lateral HFETs using device simulation,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Hiroaki Yonezawa,
Rei Kayanuma,
中島 昭,
西澤伸一,
大橋弘通,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
HIROSHI IWAI.
AlGaN/GaN-based p-channel HFETs with wide-operating temperature,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Yuuma Itou,
Hayato Hori,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Kenji Natori,
HIROSHI IWAI.
Schottky barrier height reduction process for silicide/Si interfaces,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
Shuhei Hosoda,
K. Tuokedaerhan,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT,
ECS 224nd Meeting,
ECS Transactions,
Vol. 58,
No. 7,
pp. 61-64,
Oct. 2013.
-
Taichi Inamura,
佐々木亮人,
青木克明,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A stacked sputtered process for β-FeSi2 formation,
ECS 224nd Meeting,
ECS Transactions,
Oct. 2013.
-
Hiroshi Oomine,
DARYOUSH ZADEH,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates,
ECS 224nd Meeting,
ECS Transactions,
Vol. 58,
No. 7,
pp. 385-389,
Oct. 2013.
-
宋 禛漢,
Kazuki Matsumoto,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
杉井信之,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation,
ECS 224nd Meeting,
ECS Transactions,
Vol. 58,
No. 7,
pp. 87-91,
Oct. 2013.
-
Taichi Inamura,
佐々木亮人,
青木克明,
Kuniyuki KAKUSHIMA,
片岡好則,
西山彰,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
A stacked sputtered process for β-FeSi2 formation,
ECS 224nd Meeting,
ECS Transactions,
Oct. 2013.
-
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
HIROSHI IWAI.
Interface State Density of Passivation/Nanowire Interface,
The 1st International Symposium on Nano-Wire Si Solar Cells/ MEXT “FUTURE-PV Innovation” Project,
2013.
国内会議発表 (査読なし・不明)
-
今井 慎也,
梶川 亮介,
川那子 高暢,
宗田 伊理也,
角嶋 邦之,
辰巳 哲也,
冨谷 茂隆,
筒井 一生,
若林 整.
スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
-
寺岡 楓,
今井 慎也,
黒原 啓太,
伊東 壮真,
川那子 高暢,
宗田 伊理也,
角嶋 邦之,
若林 整.
Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
-
武田 高志,
小野 凌,
草間 優太,
狩野 絵美,
宗田 伊理也,
若林 整,
五十嵐 信行.
スパッタ成膜MoS2の基板上での原子分解能電子顕微鏡観察,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
-
岡村 俊吾,
宗田 伊理也,
白倉 孝典,
若林 整.
MoS2極薄膜における磁化特性の層数依存性,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
-
梶川 亮介,
川那子 高暢,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
-
濱田 昌也,
松浦 賢太朗,
濱田 拓也,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact,
第70回応用物理学会春季学術講演会,
Mar. 2023.
-
Peilong Wang,
Atsushi Hori,
Iriya Muneta,
Takamasa Kawanago,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs,
70th JSAP Spring meeting,
Mar. 2023.
-
宗田 伊理也,
白倉 孝典,
ファム ナムハイ,
角嶋 邦之,
筒井 一生,
若林 整.
強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
立松 真一,
濱田 昌也,
濱田 拓也,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
アニール処理によるWS2-Niエッジコンタクト特性の向上,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
川那子 高暢,
梶川 亮介,
水谷 一翔,
Tsai Sung Lin,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
小野 凌,
今井 慎也,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
今井 慎也,
小野 凌,
宗田 伊理也,
角嶋 邦之,
辰巳 哲也,
冨谷 茂隆,
筒井 一生,
若林 整.
MoS2膜質のスパッタ成膜レート依存性調査,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
水谷 一翔,
星井 拓也,
川那子 高暢,
宗田 伊理也,
若林 整,
筒井 一生,
角嶋 邦之.
希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
-
阿野 響太郎,
星井 拓也,
若林 整,
筒井 一生,
依田 孝,
角嶋 邦之.
ゲート付きSiC pnダイオードの電気特性評価,
第83回応用物理学会秋季学術講演会,
Aug. 2022.
-
宗田 伊理也,
白倉 孝典,
PHAM NAM HAI,
角嶋 邦之,
筒井 一生,
若林 整.
Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS2,
第63回フラーレン・ナノチューブ・グラフェン総合シンポジウム,
Aug. 2022.
-
宗田 伊理也,
白倉 孝典,
ファム ナム ハイ,
角嶋 邦之,
筒井 一生,
若林 整.
二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調,
2022年第69回応用物理学会春季学術講演会,
Mar. 2022.
-
小森 勇太,
木村 安希,
星井 拓也,
宮野 清孝,
津久井 雅之,
水島 一郎,
依田 孝,
角嶋 邦之,
若林 整,
筒井 一生.
InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性,
第82回応用物理学会秋季学術講演会,
Sept. 2021.
-
小森 勇太,
星井 拓也,
宮野 清孝,
津久井 雅之,
水島 一郎,
依田 孝,
角嶋 邦之,
若林 整,
筒井 一生.
InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性,
第69回応用物理学会春季学術講演会,
Sept. 2021.
-
筒井一生,
濱田拓也,
高山 研,
金 相佑,
星井拓也,
角嶋邦之,
若林 整,
高橋言緒,
井手利英,
清水三聡.
選択成長法を用いたGaN 系FinFET,
電気学会電子デバイス研究会,
Mar. 2021.
-
木村 安希,
星井 拓也,
宮野 清孝,
津久井 雅之,
水島 一郎,
依田 孝,
角嶋 邦之,
若林 整,
筒井 一生.
InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
筒井 一生,
松橋 泰平,
星井 拓也,
角嶋 邦之,
若林 整,
永山 勉,
樋口 隆弘,
加藤 慎一,
谷村 英昭,
室 隆桂之,
松下 智裕,
森川 良忠.
AsおよびBの共ドープによるSi中Asクラスターの特性制御,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
高山 研,
太田 貴士,
佐々木 満孝,
向井 勇人,
濱田 拓也,
高橋 言雄,
井出 利英,
清水 三聡,
星井 拓也,
角嶋 邦之,
若林 整,
筒井 一生.
選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
久恒 悠介,
金 相佑,
星井 拓也,
角嶋 邦之,
若林 整,
筒井 一生.
横型GaN FinFETの構造最適化についての検討,
第81回応用物理学会秋季学術講演会,
Sept. 2020.
-
松橋 泰平,
星井 拓也,
沖田 寛昌,
中島 昭,
角嶋 邦之,
若林 整,
筒井 一生.
分極接合基板における2DEG枯渇電圧の解析的導出,
第67回応用物理学会春期学術講演会,
Mar. 2020.
-
松浦 賢太朗,
濱田 昌也,
濱田 拓也,
谷川 晴紀,
坂本 拓朗,
堀 敦,
宗田 伊理也,
川那子 高暢,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs,
第67回応用物理学会春期学術講演会,
Mar. 2020.
-
木村 安希,
星井 拓也,
宮野 清孝,
布上 真也,
名古 肇,
水島 一郎,
依田 孝,
角嶋 邦之,
若林 整,
筒井 一生.
InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性,
第67回応用物理学会春期学術講演会,
Mar. 2020.
-
渡辺正裕,
執行直之,
星井拓也,
古川和由,
角嶋邦之,
佐藤克己,
末代知子,
更屋拓哉,
高倉俊彦,
伊藤一夫,
福井宗利,
鈴木慎一,
竹内 潔,
宗田伊里也,
若林 整,
中島 昭,
西澤伸一,
筒井一生,
平本俊郎,
大橋弘通,
岩井洋.
トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション,
電子情報通信学会 SDM(シリコン材料・デバイス)研究会,
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,
電子情報通信学会,
Vol. 119,
No. 273,
pp. 45-48,
Nov. 2019.
-
高山 研,
向井 勇人,
濱田 拓也,
高橋 言緒,
井手 利英,
清水 三総,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
GaN Fin構造選択成長における低抵抗領域の発生原因の検討,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing,
The 80th JSAP Autumn meeting,
Sept. 2019.
-
宋 ジンハン,
太田 惇丈,
星井 拓也,
若林 整,
筒井 一生,
角嶋 邦之.
Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
山岸 朋彦,
堀 敦,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
草深 一樹,
Sunglin Tsai,
星井 拓也,
若林 整,
筒井 一生,
角嶋 邦之.
スパッタリングによって形成したAlScN膜のリーク電流の評価,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
太田 惇丈,
宋 禛漢,
星井 拓也,
若林 整,
筒井 一生,
角嶋 邦之.
原子層堆積法を用いたイットリウムシリケート薄膜の形成,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
西田 宗史,
星井 拓也,
片岡 寛明,
筒井 一生,
角嶋 邦之,
若林 整.
ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
宮田 篤希,
齋藤 大樹,
星井 拓也,
若林 整,
筒井 一生,
角嶋 邦之.
4H-SiCエピタキシャル層によるX線検出に関する検討,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
神林 郁哉,
星井 拓也,
角嶋 邦之,
若林 整,
筒井 一生.
Si(111)基板上GaNのためのMgF2バッファの検討,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
蔡 松霖,
草深 一樹,
星井 拓也,
若林 整,
筒井 一生,
角嶋 邦之.
スパッタリングを用いたAlScN膜の形成,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
濱田 昌也,
松浦 賢太朗,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
堀口 大河,
濱田 拓也,
辰巳 哲也,
冨谷 茂隆,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
木村 安希,
久永 真之佑,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
谷川 晴紀,
松浦 賢太朗,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
五十嵐 智,
望月 祐輔,
谷川 晴紀,
濱田 昌也,
松浦 賢太朗,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
今井 慎也,
濱田 昌也,
五十嵐 智,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
硫化プロセスにおけるスパッタMoS2膜質向上の重要性,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
松橋 泰平,
星井 拓也,
沖田 寛昌,
Indraneel Sanyal,
Yu-Chih Chen,
Ying-Hao Ju,
中島 昭,
角嶋 邦之,
若林 整,
Jen-Inn Chyi,
筒井 一生.
TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
向井 勇人,
髙山 研,
濱田 拓也,
高橋 言緒,
井手 利英,
清水 三聡,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
選択成長法を用いたGaN FinFETの作製,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
井上 毅哉,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
濱田 拓也,
堀口 大河,
辰巳 哲也,
冨谷 茂隆,
濱田 昌也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
沖田 寛昌,
星井 拓也,
松橋 泰平,
Sanyal Indraneel,
Chen Yu-Chih,
Ju Ying-Hao,
中島 昭,
西澤 伸一,
大橋 弘通,
角嶋 邦之,
若林 整,
Chyi Jen-Inn,
筒井 一生.
TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
-
星井 拓也,
中島 昭,
西澤 伸一,
大橋 弘通,
角嶋 邦之,
若林 整,
筒井 一生.
分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価,
日本結晶成長学会ナノエピ分科会 第11回ナノ構造・エピタキシャル成長講演会,
June 2019.
-
筒井一生,
松下 智裕,
名取 鼓太郞,
小川 達博,
室 隆桂之,
森川 良忠,
星井 拓也,
角嶋邦之,
若林整,
林 好一,
松井 文彦,
木下 豊彦.
光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測,
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,
電子情報通信学会,
Vol. 119,
No. 96,
pp. 23-27,
June 2019.
-
筒井 一生,
松下 智裕,
名取 鼓太郞,
小川 達博,
室 隆桂之,
森川 良忠,
星井 拓也,
角嶋 邦之,
若林 整,
林 好一,
松井 文彦,
木下 豊彦.
光電子ホログラフィーによる半導体中の不純物の3D原子イメージング,
第66回応用物理学会春期学術講演会,
Mar. 2019.
-
筒井 一生,
松下 智裕,
名取 鼓太郞,
室 隆桂之,
森川 良忠,
星井 拓也,
角嶋 邦之,
若林 整,
林 好一,
松井 文彦,
木下 豊彦.
光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング,
第66回応用物理学会春期学術講演会,
Mar. 2019.
-
濱田 拓也,
向井 勇人,
高橋 言緒,
井手 利英,
清水 三聡,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
FinFET応用に向けた選択成長GaNチャネルの電気特性,
第66回応用物理学会春期学術講演会,
Mar. 2019.
-
松浦 賢太朗,
濱田 昌也,
坂本 拓朗,
谷川 晴紀,
宗田 伊理也,
石原 聖也,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減,
第66回応用物理学会春期学術講演会,
Mar. 2019.
-
松浦賢太朗,
清水淳一,
外山真矢人,
大橋匠,
坂本拓朗,
宗田伊理也,
石原聖也,
角嶋邦之,
筒井一生,
小椋厚志,
若林整.
大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用,
応用物理学会シリコンテクノロジー分科会第216回研究集会,
Feb. 2019.
-
筒井一生,
松下智裕,
室隆桂之,
森川良忠,
名取鼓太郎,
小川達博,
星井拓也,
角嶋邦之,
若林整,
林好一,
松井文彦,
木下豊彦.
光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析,
応用物理学会シリコンテクノロジー分科会第216回研究集会,
Feb. 2019.
-
向井 勇人,
濱田 拓也,
高橋 言緒,
井出 利英,
清水 三聡,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Growth temperature dependence of magnetic property of sputtered MoS2 thin film,
The 79th JSAP Autumn meeting,
Sept. 2018.
-
松浦 賢太朗,
清水 淳一,
外山 真矢人,
大橋 匠,
宗田 伊理也,
石原 聖也,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
小川 達博,
名取 鼓太郎,
星井 拓也,
仲武 昌史,
渡辺 義夫,
永山 勉,
樋口 隆弘,
加藤 慎一,
谷村 英昭,
角嶋 邦之,
若林 整,
筒井 一生.
フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
谷川 晴紀,
松浦 賢太朗,
濱田 昌也,
坂本 拓朗,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
五十嵐 智,
松浦 賢太朗,
濱田 昌也,
谷川 晴紀,
坂本 拓朗,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
佐々木 杏民,
星井 拓也,
宗田 伊理也,
若林 整,
筒井 一生,
角嶋 邦之.
n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響,
Sept. 2018.
-
佐々 康平,
久恒 和也,
星井 拓也,
宗田 伊理也,
若林 整,
筒井 一生,
角嶋 邦之.
酸化セリウムを挿入したMIMキャパシタの充放電特性,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
岩塚 春樹,
星井 拓也,
宗田 伊理也,
若林 整,
筒井 一生,
角嶋 邦之.
Siを導入したHfO2のMIMキャパシタの容量特性,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
久永 真之佑,
渡部 拓巳,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
鶴田 脩真,
星井 拓也,
中島 昭,
西澤 伸一,
大橋 弘通,
角嶋 邦之,
若林 整,
筒井 一生.
AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
清水 孝,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
TMAHによる表面処理のp型GaN/金属コンタクト特性への影響,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
井上 毅哉,
星井 拓也,
角嶋 邦之,
若林 整,
岩井 洋,
筒井 一生.
シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
久恒 和也,
星井 拓也,
宗田 伊理也,
若林 整,
筒井 一生,
角嶋 邦之.
CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
神林 郁哉,
星井 拓也,
角嶋 邦之,
若林 整,
筒井 一生.
Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価,
第79回応用物理学会秋季学術講演会,
Sept. 2018.
-
濱田拓也,
向井勇人,
高橋言緒,
井手利英,
清水三聡,
星井拓也,
角嶋邦之,
若林整,
岩井洋,
筒井一生.
FinFET応用に向けた選択成長GaNチャネルの電気特性,
第82回半導体・集積回路シンポジウム,
Aug. 2018.
-
Chen-Yi Su,
Takuya Hoshii,
Iriya Muneta,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Kuniyuki Kakushima.
Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3,
65th JSAP Spring meeting,
Mar. 2018.
-
大橋 匠,
坂本 拓朗,
松浦 賢太朗,
清水 淳一,
外山 真矢人,
石原 聖也,
日比野 祐介,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
Migration制御したスパッタリング法による2次元層状MoS2成膜,
第65回応用物理学会春季学術講演会,
Mar. 2018.
-
坂本 拓朗,
大橋 匠,
松浦 賢太朗,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減,
Mar. 2018.
-
Zulkornain Bin Danial,
宗田 伊理也,
早川 直希,
角嶋 邦之,
筒井 一生,
若林 整.
Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate,
第65回応用物理学会春季学術講演会,
Mar. 2018.
-
安重 英祐,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和,
第65回応用物理学会春季学術講演会,
Mar. 2018.
-
筒井一生,
角嶋邦之,
星井 拓也,
中島 昭,
西澤 伸一,
若林整,
宗田伊理也,
佐藤 克己,
末代 知子,
齋藤 渉,
更屋 拓哉,
伊藤 一夫,
福井 宗利,
鈴木 慎一,
小林 正治,
高倉 俊彦,
平本 俊郎,
小椋 厚志,
沼沢 陽一郎,
大村 一郎,
大橋 弘通,
岩井洋.
三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術),
電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan,
電気学会,
Vol. 2017,
No. 74,
pp. 1-6,
Nov. 2017.
-
龍口 傑,
星井 拓也,
宗田 伊理也,
若林 整,
筒井 一生,
岩井 洋,
角嶋 邦之.
横型Siナノウォール太陽電池の発電特性に関する検討,
第64回応用物理学会春季学術講演会,
Mar. 2017.
-
早川直希,
宗田伊理也,
大橋匠,
松浦賢太朗,
清水淳一,
角嶋邦之,
筒井一生,
若林整.
トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性,
第64回応用物理学会春季学術講演会,
Mar. 2017.
-
外山 真矢人,
大橋 匠,
松浦 賢太朗,
清水 淳一,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性,
第64回応用物理学会春季学術講演会,
Mar. 2017.
-
篠原 健朗,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製,
第64回応用物理学会春季学術講演会,
Mar. 2017.
-
安重 英祐,
大橋 匠,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性,
第77回応用物理学会秋季学術講演会,
Sept. 2016.
-
Chunmeng Dou,
Kakushima,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
H. Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
雷 一鳴,
宗清修,
角嶋邦之,
川那子高暢,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋,
古橋 壮之,
三浦 成久,
山川 聡.
ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析,
第61回応用物理学会春季学術講演会,
2014.
-
Yoon Minjae,
寺山一真,
中島 昭,
西澤伸一,
大橋弘通,
角嶋邦之,
若林整,
筒井一生,
岩井洋.
デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証,
第61回応用物理学会春季学術講演会,
2014.
-
松川佳弘,
岡本真里,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋,
齋藤渉.
AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗:Ti/C膜厚及び比率依存性,
第61回応用物理学会春季学術講演会,
2014.
-
武井優典,
岡本真里,
マンシン,
萱沼怜,
神谷真行,
齋藤渉,
筒井一生,
角嶋邦之,
若林整,
片岡好則,
岩井洋.
AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性,
第61回応用物理学会春季学術講演会,
2014.
-
堀隼人,
伊藤勇磨,
筒井一生,
角嶋邦之,
若林整,
片岡好則,
西山彰,
杉井信之,
名取研二,
岩井洋.
薄膜SOI太陽電池の発電特性への基板バイアス効果,
第61回応用物理学会春季学術講演会,
2014.
-
寺山一真,
中島 昭,
西澤伸一,
大橋弘通,
角嶋邦之,
若林整,
筒井一生,
岩井洋.
デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算,
第61回応用物理学会春季学術講演会,
2014.
-
劉 璞誠,
竇春萌,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究,
第61回応用物理学会春季学術講演会,
2014.
-
譚錫昊,
川那子高暢,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究,
第61回応用物理学会春季学術講演会,
2014.
-
元木雅章,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係,
第61回応用物理学会春季学術講演会(2014年3月17日~3月20日),
2014.
-
米澤宏昭,
萱沼怜,
中島 昭,
西澤伸一,
大橋弘通,
筒井一生,
角嶋邦之,
若林整,
岩井洋.
広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET,
第61回応用物理学会春季学術講演会,
2014.
-
伊藤勇磨,
堀隼人,
筒井一生,
角嶋邦之,
若林整,
片岡好則,
西山彰,
杉井信之,
名取研二,
岩井洋.
微細Si構造を利用した太陽電池に適した接合プロセスの提案,
第61回応用物理学会春季学術講演会,
2014.
-
神谷真行,
武井優典,
齋藤渉,
角嶋邦之,
若林整,
片岡好則,
筒井一生,
岩井洋.
AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性,
第61回応用物理学会春季学術講演会,
2014.
-
小路智也,
伊藤勇磨,
堀隼人,
宮澤遼太,
嘉藤貴史,
角嶋邦之,
若林整,
筒井一生,
片岡好則,
岩井洋.
Surface States, Potential and Interface Control for Si Nanowire PV,
文部科学省「革新的エネルギー研究開発拠点形成事業」第2回国際シンポジウム ナノワイヤー太陽電池 ~最先端の太陽電池研究で福島復興へ~,
2014.
-
長谷川明紀,
呉研,
宋 禛漢,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価,
第61回応用物理学会春季学術講演会,
2014.
-
Atsushi Takemasa,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts,
The Workshop on Future Trend of Nanoelectronics:WIMNACT 39,
2014.
-
小路智也,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Siナノワイヤー曲面における保護膜界面準位密度の研究,
第61回応用物理学会春季学術講演会,
2014.
-
岡本真里,
松川佳弘,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
大橋弘通,
岩井洋,
齋藤渉.
TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化,
第61回応用物理学会春季学術講演会,
2014.
-
今村浩章,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価,
第61回応用物理学会春季学術講演会,
2014.
-
吉原亮,
元木雅章,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子,
第61回応用物理学会春季学術講演会,
2014.
-
細田修平,
Tuokedaerhan Kamale,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現,
第61回応用物理学会春季学術講演会,
2014.
-
関拓也,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究,
第61回応用物理学会春季学術講演会,
2014.
-
大嶺洋,
ザデハサン ダリユーシユ,
角嶋邦之,
西山彰,
杉井信之,
片岡好則,
若林整,
筒井一生,
名取研二,
岩井洋.
La2O3/ InGaAs界面ラフネスに及ぼすALDプロセスの影響,
第61回応用物理学会春季学術講演会,
2014.
-
稲村太一,
嘉藤貴史,
佐々木亮人,
青木克明,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
β-FeSi2の抵抗率熱処理依存性,
第61回応用物理学会春季学術講演会,
2014.
-
LiWei,
佐々木亮人,
大図 秀行,
青木克明,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
単斜晶WO3薄膜抵抗率の熱処理依存性,
第61回応用物理学会春季学術講演会,
2014.
-
陳江寧,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋,
齋藤渉.
La2O3ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性,
第61回応用物理学会春季学術講演会,
2014.
-
呉研,
長谷川明紀,
角嶋邦之,
渡辺 孝信,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性,
第61回応用物理学会春季学術講演会,
2014.
-
Tuokedaerhan Kamale,
Shuhei Hosoda,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
W2Cゲート電極によるLa-silicate MOSFETの移動度改善,
第61回応用物理学会春季学術講演会,
2014.
-
ザデハサン ダリユーシユ,
大嶺洋,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
低界面準位とsub-nm CETを有するLa2O3/ In0.53Ga0.47Asゲートスタックの実現,
第61回応用物理学会春季学術講演会,
2014.
-
小路智也,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
立体Si構造における局所的な界面準位密度の抽出,
ゲートスタック研究会 ―材料・プロセス・評価の物理―(第19回研究会),
2014.
-
劉 璞誠,
米澤宏昭,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
AlGaNのドライエッチングへのBcl3の影響に関する研究,
第74回応用物理学会秋季学術講演会,
2013.
-
嘉藤貴史,
稲村太一,
佐々木 亮人,
青木 克明,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究,
第74回応用物理学会秋季学術講演会,
2013.
-
松川佳弘,
岡本真里,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋,
齋藤渉.
AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
米澤宏昭,
中島 昭,
西澤 伸一,
大橋 弘通,
筒井一生,
角嶋邦之,
若林整,
岩井洋.
AlGaN/GaN系pチャンネルHFETの製作,
第74回応用物理学会秋季学術講演会,
2013.
-
宋 禛漢,
松本一輝,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
服部健雄,
岩井洋.
Niシリサイドナノワイヤ抵抗率のNi膜厚依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
鹿国強,
大嶺洋,
ザデハサン ダリユーシユ,
角嶋邦之,
西山彰,
杉井信之,
片岡好則,
若林整,
筒井一生,
名取研二,
岩井洋.
ALD堆積条件によるLa2O3/In0.53Ga0.47Asキャパシタの電気特性への影響,
第74回応用物理学会秋季学術講演会,
2013.
-
今村浩章,
稲村太一,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価,
第74回応用物理学会秋季学術講演会,
2013.
-
岡本真里,
松川佳弘,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化,
第74回応用物理学会秋季学術講演会,
2013.
-
石川昂,
小路智也,
角嶋邦之,
若林整,
片岡好則,
西山彰,
杉井信之,
筒井一生,
名取研二,
岩井洋.
チャージポンピング法を用いた三次元Si構造の界面準位密度測定,
第74回応用物理学会秋季学術講演会,
2013.
-
小路智也,
石川昂,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定,
第74回応用物理学会秋季学術講演会,
2013.
-
中村嘉基,
細田修平,
Tuokedaerhan Kamale,
角嶋邦之,
片岡好則,
西山彰,
若林整,
杉井信之,
筒井一生,
名取研二,
岩井洋.
W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価,
第74回応用物理学会秋季学術講演会,
2013.
-
長谷川明紀,
呉研,
宋 禛漢,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上,
第74回応用物理学会秋季学術講演会,
2013.
-
宗清修,
川那子高暢,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響,
第74回応用物理学会秋季学術講演会,
2013.
-
元木雅章,
吉原亮,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
大橋匠,
若林整,
角嶋邦之,
杉井信之,
西山彰,
片岡好則,
名取研二,
筒井一生,
岩井洋.
単層MoS2チャネルを用いたn-MOSFETの性能見積もり,
[第74回応用物理学会秋季学術講演会,
2013.
-
譚錫昊,
岡本真里,
角嶋邦之,
片岡好則,
西山彰,
杉井信之,
若林整,
筒井一生,
名取研二,
岩井洋.
AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性,
第74回応用物理学会秋季学術講演会,
2013.
-
神谷真行,
寺山一真,
武井優典,
齋藤 渉,
角嶋邦之,
若林整,
片岡好則,
筒井一生,
岩井洋.
AlGaN/GaN HEMTへの凹凸AlGaN層導入による2次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性,
第74回応用物理学会秋季学術講演会,
2013.
-
武井優典,
神谷真行,
寺山一真,
米澤宏昭,
齋藤 渉,
筒井一生,
角嶋邦之,
若林整,
片岡好則,
岩井洋.
AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性,
第74回応用物理学会秋季学術講演会,
2013.
その他の論文・著書など
-
Ohno, H.,
Yamamoto, M.,
Endoh, T.,
Ando, Y.,
Hanyu, T.,
Itoh, K.M.,
Tanaka, M.,
Mitani, S.,
Hitoshi Wakabayashi.
FOREWORD: Spintronics materials and devices for working memory technology,
Japanese Journal of Applied Physics,
Vol. 56,
No. 8,
2017.
-
若林整.
シリコントランジスタのあゆみと将来,
應用物理,
応用物理学会,
Vol. 82,
No. 4,
pp. 292-298,
Apr. 2013.
-
Hitoshi Wakabayashi,
Schruefer, K..
Foreword: Welcome to the 2013 symposium on VLSI technology,
Digest of Technical Papers - Symposium on VLSI Technology,
2013.
特許など
-
堀敦,
若林整,
伊藤浩之,
日向寺 朗,
亘理 誠夫,
新田 元.
センシングシステム、センサ端末.
特許.
登録.
国立大学法人東京工業大学.
2019/01/31.
特願2019-015545.
2020/08/13.
特開2020-123216.
特許第7217000号.
2023/01/23
2023.
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