論文

• Anri Nakajima, Shin-Ichiro Kuroki, Shuntaro Fujii, Takashi Ito. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films, Jpn. J. Appl. Phys., The Japanese Journal of Applied Physics, Vol. 51, pp. 1-4, Apr. 2012.
• S.-I.Kuroki, S. Fujii, K. Kotani, T. Ito. Carrier Transport and its variation of lase-lateral-crystallised poly-Si TFTs, ELECTRONICS LETTERS, Vol. 47, No. 24, Nov. 2011.
• Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani, Takashi Ito. Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams, J. Electrochem. Soc., Vol. 158, No. 9, pp. H924-H930, July 2011.
• Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito. Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization, Japanese Journal of Applied Physics, Japanese Journal of Applied Physics, Vol. 50, No. 4, pp. 04DH10-1 - 04DH10-5, Apr. 2011.
• Koji Kotani, Atsuo Sugimoto, Yutaka Omiya, Takashi Ito. Above-Complementary Metal–Oxide–Semiconductor Metal Pattern Technique for Postfabrication Tuning of On-Chip Inductor Characteristics, Japanese Journal of Applied Physics, Japanese Journal of Applied Physics, Vol. 50, No. 4, pp. 04DB04-1 - 04DB04-5, Apr. 2011.
• Anri Nakajima, Takashi Kudo, Takashi Ito. Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation, Appl. Phys. Lett., American Institute of Physics, Vol. 98, Issue 5, pp. 053501-1-3, Jan. 2011.
• Shuntaro Fujii, Shin-Ichiro Kuroki, Masayuki Numata, Koji Kotani, Takashi Ito. Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films, Jpn. J. Appl. Phys., Jpn. J. Appl. Phys., Vol. 48, pp. 04C129-1-4, Nov. 2010.
• Takashi ITO, Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI. Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels, IEICE TRANCE. ELECTRON., Vol. E93-C, No. 11, pp. 1638-1644, Nov. 2010.
• Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, Takashi Ito. Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors, Japanese Journal of Applied Physics (JJAP), Japanese Journal of Applied Physics (JJAP), Japanese Journal of Applied Physics (JJAP), Vol. 49, pp. 4DJ11-1-5, Oct. 2010.
• Yutaka Omiya, Koji Kotani, Takashi Ito. Above-Complementary Metal?Oxide?Semiconductor Inductor for Rapid Prototyping of Mixed-Signal System on Chips, The Japanese Journal of Applied Physics (JJAP), Vol. 49, pp. 04DE13-1-5, Apr. 2010.
• Jun Jiang, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito. Ferroelectric Properties of Lead Zirconate Titanate Thin Film on Glass Substrate Crystallized by Continuous-Wave Green Laser Annealing, Japanese Journal of Applied Physics (JJAP), Japanese Journal of Applied Physics (JJAP), Japanese Journal of Applied Physics (JJAP), Vol. 49, pp. 04DH14-1-4, Apr. 2010.
• Koji Kotani, Yohei Koshimoto, Takashi Ito. Stable Readout Circuit for Ferroelectric Random Access Memory Using Complementary Metal?Oxide?Semiconductor-Inverter-Based Capacitive-Feedback Charge-Integration Scheme, Japanease Journal of Applied Phisics (JJAP), Vol. 49, pp. 04DE10-1-5, Apr. 2010.
• Koji Kotani, Atsushi Sasaki, Takashi Ito. High-Efficiency Differential-Drive CMOS Rectifier, IEEE Journal of Solid-State Circuits, 3011-3018, Vol. 44, No. 11, Nov. 2009.
• Rinji Sugino, Takashi Ito. The formation, imaging, and application of thin silicon-dioxide membrane, Electrochimica Acta, Electrochimica Acta, Vol. 54, pp. 5965-6118, Oct. 2009.
• Xun Gu, Takenao Nemoto, Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi. Effect of Additives in Organic Acid Solutions for Post-CMP Cleaning on Polymer Low-k Fluorocarbon, J. Electrochem. Soc., J. Electrochem. Soc., Vol. 156, No. 6, pp. H409-H415, June 2009.
• Shin-Ichiro Kuroki, Kiichiro Tago, Koji Kotani, Takashi Ito. Low-Temperature Recrystallization of Ferroelectric Lead Zirconate Titanate Thin Films on Glass Substrate Using Continuous-Wave Green Laser, Jpn. J. Appl. Phys., Jpn. J. Appl. Phys., Vol. 48, pp. 04C142-1-4, Apr. 2009.
• Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda, Yasuyuki Shirai, Akinobu Teramoto, Masaki Hirayama, Tadahiro Ohmi, Takayuki Watanabe, Takashi Ito. Inductively coupled plasma generator for an environmentally benign perfluorocarbon abatement system, J. Vac. Sci. Technol. A, J. Vac. Sci. Technol. A, Vol. A27, No. 3, pp. 465-470, Mar. 2009.
• Koji KOTANI, Takashi ITO. Self-Vth-Cancellation High-Efficiency CMOS Rectifier Circuit for UHF RFIDs, IEICE TRANS. ELECTRON., IEICE TRANS. ELECTRON., Vol. E92-C, No. 1, pp. 153-160, Jan. 2009.
• Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda, Yasuyuki Shirai, Akinobu Teramoto, Masaki Hirayama, Tadahiro Ohmi, Takayuki Watanabe, Takashi Ito. High-Efficiency PFC Abatement System Utilizing High-Efficiency PFC Abatement System Utilizing Immobilization, IEEE Trans. on Semicon. Manufacturing, IEEE, Vol. 21, No. 4, pp. 668-675, Nov. 2008.
• Shuntaro Fujii, Shin-Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, Takashi Ito. Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization, ECS Transactions, 16 (9) (2008) 10.1149/1.2980543 © The Electrochemical Society, The Electrochemical Society, Vol. 16, No. 9, pp. 145-151, Sept. 2008.
• 杉野林志, Unsoon Kim, Kyunghoon Min, Ning Chen, Huaqiang Wu, Chungho Lee, Fred Cheung, Hiroyuki Kinoshita, 上西雅彦, 加藤寿, 多田新吾, 伊藤隆司. 塩素ガスエッチングを用いた微細MOS Elevated Source/Drain プロセス, 電子情報通信学会論文誌C, (社)電子情報通信学会, Vol. J91-C, No. 7, pp. 363-369, July 2008.
• Tadahiro Ohmi, Hiraku ISHIKAWA, Toshihisa NOZAWA, Takaaki MATSUOKA, Akinobu TERAMOTO, Masaki HIRAYAMA, Takashi ITO, Tadahiro OHMI. Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-k Copper Metallization, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 47, No. 4, pp. 2531–2534, Apr. 2008.
• Shuntaro FUJII, Shin-Ichiro KUROKI, Xiaoli ZHU, Masayuki NUMATA, Koji KOTANI, Takashi ITO. Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline, Jpn. J. Appl. Phys., The Japan Society of Applied Physics, Vol. 47, No. 4, pp. 3046–3049, Apr. 2008.
• Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI, Masatoshi FUKUDA, Hideharu SHIDO, Yasuyoshi MISHIMA, Takashi ITO. Analysis of Drivability Enhancement Factors in Nanograting Metal–Oxide–Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 47, No. 4, pp. 3081–3085, Apr. 2008.
• Takenao Nemoto, Hiroshi Imai, Akinobu Teramoto, Takashi Ito, Shigetoshi Sugawa, Tadahiro Ohmi. Tantalum Nitride Sputtering Deposition with Xe on Fluorocarbon for Cu Interconnections, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 155, No. 5, pp. H323-H328, Mar. 2008.
• Takashi Ito, Shin-Ichiro Kuroki, Kouji Kotani. Nano-Grating Channel MOSFETs for Improved Current Drivability, ECS Transactions, The Electrochemical Society, Vol. 2, No. 10, pp. 83-90, Oct. 2007.
• Shin-Ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito. Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser, ECS Transactions, The Electrochemical Society, Vol. 2, No. 10, pp. 71-75, Oct. 2007.
• Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI, Hideharu SHIDO, Masatoshi FUKUDA, Yasuyoshi MISHIMA, Takashi ITO. Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability, IEICE Transactions on Electronics, The Institute of Electronics, Infomation and Communication Engineers, Vol. E90-C, No. 9, pp. 1830-1836, Sept. 2007.
• K. Ishii, Y. Kikuchi, S. Matsuyama, Y. Kanai, K. Kotani, T. Ito, H. Yamazaki, Y. Funaki, R. Iwata, M. Itoh, K. Yanai, Jun Hatakezawa, N. Itoh, N. Tanizaki, D. Amano, M. Yamada, T. Yamaguchi. First achievement of less than 1mm FWHM resolution in practical semiconductor animal PET scanner, Nuclear Instruments and Methods in Physics Research, Nuclear Instruments and Methods in Physics Research, Vol. A, 576, No. 2-3, pp. 435-440, June 2007.
• Xiaoli Zhu, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito. Advantages of Nano-grating Substrates in CMOS -FET Characteristics, ECS Transactions, The Electrochemical Society, Vol. 11, No. 6, pp. 467-472, June 2007.
• Hisakazu Miyatake, Takashi Ito. Improvement of ArF Photo Resist Pattern by VUV Cure, IEICE Transactions on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E90-C, No. 5, pp. 1006-1011, May 2007.
• Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito. Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation, Jpn. J. Appl. Phys., The Japan Society of Applied Physics, Vol. 46, No. 4B, pp. 2501–2504, Apr. 2007.
• Shin-Ichiro Kuroki, Masayuki Toda, Masaru Umeda, Koji Kotani, Takashi Ito. Permittivity Enhancement of Mechanically Strained SrTiO MIM Capacitor, ECS Transactions, The Electrochemical Society, Vol. 11, No. 3, pp. 293-299, Mar. 2007.
• 伊藤隆司, 杉野林志, 石川健治. ライ洗浄技術―半導体製造―, 精密工学会誌, 社団法人精密工学会, Vol. 70, No. 7, pp. 894-897, July 2004.
• 伊藤隆司, 杉野林志, 石川健治. ドライ洗浄技術―半導体製造―, 精密工学会誌, 精密工学会, Vol. 70, No. 7, pp. 894-897, July 2004.
• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, Fujitsu Sci. and Tech. Jour., Fujitsu, Vol. 39, No. 1, pp. 40-51, Jan. 2003.
• Takashi Ito. Research & Development of Advanced CMOS Technologies, Fujitsu Sci. and Tech. Jour., Fujitsu, Vol. 39, No. 1, pp. 3-8, Jan. 2003.
• Takashi Ito. Research & Development of Advanced CMOS Technologies, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 39, No. 1, pp. 3-8, 2003.
• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 39, No. 1, pp. 40-51, 2003.
• Takashi Ito, Shinji Okazaki. Pushing the limits of lithography, Nature, Nature Publishing Group, a division of Macmillan Publishers Limited, Vol. 406, pp. 1027-1031, Aug. 2000.
• Takashi Ito, Shinji Okazaki. Pushing the Limit of Lithography, Nature, Nature, Vol. 406, No. 6799, pp. 1027-1031, Aug. 2000.
• Takashi Ito, Rinji Sugino. Dry Cleaning Technologies Using UV-Excited Radicals and Cryogenic Aerosols, Solid State Phenomena, Vol. 65-66, pp. 219-224, July 1999.
• Rinji Sugino, Takashi Ito. Removal of Fe Contaminants in SiO2 Layers with Successive Processing of Poly-Si Deposition and Cl-Radical Etching, J. Electrochem. Soc., Vol. 114, No. 11, pp. 4059-4061, 1997.
• Rinji Sugino, Yoshiko Okui, Mayumi Shigeno, Satoshi Okuno, Kanetake Takasaki, Takashi Ito. Dry Cleaning for Fe Contaminants on Si and SiO2 Surfaces with Silicon Chlorides, J. Electrochem. Soc., Vol. 114, No. 11, pp. 3984-3988, 1997.
• Rinji Sugino, Toshiro Nakanishi, Kanetake Takasaki, Takashi Ito. Identification of MOS Gate Dielectric Breakdown Spot Using High Selectivity Cl Radical Etching Technique, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 143, No. 8, pp. 2691-2694, Aug. 1996.
• Takashi Ito. Sequential Dry Cleaning System for Highly-Controlled Silicon Surfaces, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-79-C, No. 3, pp. 375-381, Mar. 1996.
• Fumitoshi Sugimoto, Yoshihiro Arimoto, Takashi Ito. Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 34, No. 12A, pp. 6314-6320, Dec. 1995.
• Yoji Saito, Hideo Imai, Yoshihiro Sugita, Takashi Ito. Effects of Vacuum-Ultraviolet-Light-Induced Surface Reaction on Selective and Anisotropic Etching of Silicon Dioxide Using Anhydrous Hydrogen Fluoride Gas, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 34, No. 12B, pp. 6882-6885, Dec. 1995.
• Fumitoshi Sugimoto, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 34, No. 1, pp. 30-35, Jan. 1995.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Toda, Tatsuya Yamazaki, Kanetake Takasaki, Takashi Ito. Effect of Fluorine on Boron Diffusion in Thin Silicon Dioxides and Oxynitride, Journal of Applied Physics, American Institute of Physics, Vol. 77, No. 1, pp. 417-419, Sept. 1994.
• Kenichi Goto, Tatsuya Yamazaki, Yasuo Nara, Tetsu Fukano, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Ti Salicide Process for Sub-quarter-Micron CMOS Devices, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-77-C, No. 3, pp. 480-485, Mar. 1994.
• Rinshi Sugino, Yasuo Nara, Hiroshi Horie, Takashi Ito. Ultraviolet Excited Cl-Radical Etching of Si Through Native Oxides, Journal of Applied Physics, American Institute of Physics, Vol. 76, No. 9, pp. 5498-5502, Feb. 1994.
• Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. Analytical Surface Potential Expression for Thin Film Double-Gate SOI MOSFETs, Solid-State Electron, ELSEVIER, Vol. 37, No. 2, pp. 327-332, Feb. 1994.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 12, pp. 3624-3627, Dec. 1993.
• Satoru Watanabe, Kei Horiuchi, Takashi Ito. Atomic Step Structure on Vicinal H/Si (111) Surface Formed by Hot Water Immersion, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 32, No. 8, pp. 3420-3425, Aug. 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Silicon Surface Cleaning Using Photoexcited Fluorine Gas Diluted with Hydrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 6, pp. 1705-1708, June 1993.
• Manabu Kojima, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-76-C, No. 4, pp. 572-576, Apr. 1993.
• Yoshihiro Arimoto, Hiroshi Horie, Naoshi Higaki, Manabu Kojima, Fumitoshi Sugimoto, Takashi Ito. Advanced Metal Oxide Semiconductor and Bipolar Devices on Bonded Silicon-on-Insulators, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 4, pp. 1138-1143, Apr. 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 2, pp. 366-371, Feb. 1993.
• Yasuhisa Sato, Rinshi Sugino, Masaki Okuno, Toshiro Nakanishi, Takashi Ito. Electrical Characteristics of Silicon Devices after UV-Excited Cleaning, IEICE Transaction on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-76C, No. 1, pp. 41-45, Jan. 1993.
• Yasuo Nara, Yoshihiro Sugita, Kei Horiuchi, Takashi Ito. Fine Pattern Etching of Silicon Using SR-Assisted lonization of CP4 Gas, Journal of Photopolymer Science and Technology, The Conference of Photopolymer Science and Technology, Vol. 6, No. 4, pp. 617-24, 1993.
• Yasuo Nara, Fabrice Moscheni, Yoshio Sugita, Kei Horiuchi, Takashi Ito. Evaluation of Photoemitted Current from SiO2 Film on Silicon During Synchrotron Radiation lrradiation, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 31, No. 12B, pp. 4454-4458, Dec. 1992.
• Norio Miyata, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Intermittent Ultraviolet lrradiation for Silicon Selective Epitaxial Growth, Applied Phisics Letters, American Institute of Physics, Vol. 62, No. 8, pp. 588-590, Dec. 1992.
• Yasuo Nara, Yoshihiro Sugita, Kei Horiuchi, Takashi Ito. Synchrotron Radiation-Assisted Silicon Homoepitaxy at 100 ℃ Using Si2H6/H2 Mixture, Applied Phisics Letters, American Institute of Physics, Vol. 61, No. 1, pp. 93-95, July 1992.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Nonuniformities of Native Oxide on Si(001) Surfaces Formed during Wet Chemical Cleaning, Applied Phisics Letters, American Institute of Physics, Vol. 61, No. 1, pp. 102-104, July 1992.
• Rinshi Sugino, Yoshiko Okui, Masaki Okuno, Mayumi Shigeno, Yasuhisa Sato, Akira Osawa, Takashi Ito. Removal of Fe and Al on a Silicon Surface Using UV-Excited Dry Cleaning, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-75-C, No. 7, pp. 829-833, July 1992.
• Yasuo Nara, Yoshihiro Sugita, Kei Horiuchi, Takashi Ito. Synchrotron Radiation-Assisted Silicon Film Growth by lrradiation Parallel to the Substrate, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 31, No. 8, pp. 2333-2337, June 1992.
• Yasuo Nara, Yoshihiro Sugita, Noriaki Nakayama, Takashi Ito. Etching of Si02 Film by Synchrotron Radiation in Hydrogen and its Application to Low Temperature Surface Cleaning, Journal of Vaccum Science and Technology, AVS, Vol. B10, pp. 274-277, Jan. 1992.
• Hiroki Ogawa, Naozumi Terada, Kazuhisa Sugiyama, Kazunori Moriki, Noriyuki Miyata, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori. Silicon-Hydrogen Bonds in Silicon Oxide Near the SiO2/Si Interface, Applied Surface Science, ELSEVIER, Vol. 56-58, pp. 836-840, 1992.
• Toshihiro Sugii, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito, Yuji Furumura, Ikuo.Namura, Hiroshi Goto, Toshiya Tahara. SiC Growth and its Application to High Speed Si-HBTs, Microelectronic Engineering, ELSEVIER, Vol. 19, pp. 335-342, 1992.
• Yasuhiro Sato, Rinshi Sugino, Takashi Ito. Photoexcited Processes for Semiconductor Dry Cleaning and Dry Etching, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 27, No. 4, pp. 317-325, Dec. 1991.
• Satoru Watanabe, Mayumi Shigeno, Noriaki Nakayama, Takashi Ito. Silicon Monohydride Termination of Silicon (111) Surface Formed by Boiling Water, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 30, No. 12B, pp. 3575-3579, Dec. 1991.
• Tatsuya Yamazaki, Takashi Ito. Photoexcited Processes for Semiconductor Low Temperature Epitaxy, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 27, No. 4, pp. 299-316, Dec. 1991.
• Satoru Watanabe, Noriaki Nakayama, Takashi Ito. Homogeneous Hydrogen-Terminated Si(111) Surface Formed Using Aqueous HF Solution and Water, Applied Phisics Letters, American Institute of Physics, Vol. 59, No. 12, pp. 1458-1460, Nov. 1991.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Removing Native Oxide from Si (001) Surfaces using Photoexcited Fluorine Gas, Applied Phisics Letters, American Institute of Physics, Vol. 59, No. 11, pp. 2576-2578, Nov. 1991.
• Atsushi Fukuroda, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Si Wafer Bonding with Ta Silicide Formation, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 30, No. 10A, pp. L1693-L1695, Oct. 1991.
• Yasuo Nara, Yoshihiro Sugita, Noriaki Nakayama, Takashi Ito. Synchrotron Radiation Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 30, No. 10A, pp. L1753-L1755, Oct. 1991.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 30, No. 6A, pp. L970-L972, June 1991.
• 渡辺悟, 滋野真弓, 伊藤隆司. プロセスを高性能化する水素ターミネートSi表面, ウルトラクリーンテクノロジー, pp. 3(101)-8(106), Mar. 1991.
• 伊藤隆司, 山崎辰也. 光励起プロセスを用いたSiの低温エピタキシー, 精密工学会誌, 精密工学会, pp. 136-144, 1991.
• Kazuhisa Sugiyama, Takayuki lgarashi, Kazunori Moriki, Yoshikatsu Nagasawa, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori. Silicon-Hydrogen Bonds in Native Oxides Formed During Wet Chemical Treatments, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 29, No. 12, pp. L2401-L2404, Dec. 1990.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Si Hetero-Bipolar Transistor with a Fluorine Doped SiC Emitter and a Thin, Highly-Doped Epitaxial Base, IEEE Transactions on Electron Devices, IEEE Electron Devices Society?, Vol. ED-37, No. 11, pp. 2331-2335, Nov. 1990.
• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Continuous Growth of Low-Temperature Si Epitaxial Layer with Heavily Phosphorous and Boron Doping Using Photoepitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 137, No. 6, pp. 1981-1987, June 1990.
• Tatsuya Yamazaki, Norio Miyata, Takayuki Aoyama, Takashi Ito. Investigation of Thermal Removal of Native Oxide from Si (100) Surfaces in Hydrogen for Low-Temperature Si CVD Epitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 139, No. 4, pp. 1175-1180, Apr. 1990.
• Toshihiro Sugii, Takayuki Aoyama, Takashi Ito. Low-Temperature Growth of SiC on Si by Gas-Source MBE, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 137, No. 3, pp. 989-992, Mar. 1990.
• Tatsuya Yamazaki, Satoru Watanabe, Takashi Ito. Heavy Boron Doping in Low Temperature Si Photoepitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 137, No. 1, pp. 313-318, Jan. 1990.
• Takayuki Aoyama, Toshihiro Sugii, Takashi Ito. Determination of Band Line-up in βSiC/Si Heterojunction for Si-HBTs, Applied Surface Science, ELSEVIER, Vol. 41, No. 42, pp. 584-586, Nov. 1989.
• Toshihiro Sugii, Takayuki Aoyama, Takashi Ito. Polycrystalline SiC for A Wide-Gap Emitter of Si-HBTs, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 136, No. 10, pp. 3111-3115, Oct. 1989.
• Satoru Watanabe, Rinshi Sugino, Tatsuya Yamazaki, Yasuo Nara, Takashi Ito. Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 28, No. 10, pp. 2167-2171, Aug. 1989.
• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Continuous Growth of Heavily Doped p+-n+ Si Epitaxial Layer Using Low-Temperature Photoepitaxy, Applied Physics Letters, American Institute of Physics, Vol. 55, No. 9, pp. 879-881, Aug. 1989.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Improved Current Gain in Bipolar Transistor with Bandgap Narrowing in Base, Electronics Letters, Institution of Engineering and Technology?, Vol. 25, No. 1, pp. 60-61, May 1989.
• Takeo Hattori, Kazuhiro Takase, Hiroaki Yamagishi, Rinshi Sugino, Yasuo Nara, Takashi Ito. Chemical Structures of Native Oxides Formed during Wet Chemical Treatment, Japanese journal of applied physics, The Japan Society of Applied Physics, Vol. 28, No. 2, pp. L296-L298, Feb. 1989.
• Takashi Kato, Takashi Ito. Interfacial Oxidation of Silicon Substrates through Ta2O5, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 135, No. 10, pp. 2586-2590, Oct. 1988.
• 杉野林志, 奈良安雄, 渡辺悟, 伊藤隆司. 光励起塩素ラジカルを用いたシリコンのエッチングとクリーニング, 電気化学および工業物理化学, 電気化学会, Vol. 56, No. 7, pp. 533-537, July 1988.
• Takashi Kato, Takashi Ito, Mamoru Maeda. Chemical Vapor Deposition of Aluminum Enhanced by Magnetron-Plasma, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 135, No. 2, pp. 455-459, Feb. 1988.
• Toshihiro Sugii, Takashi Ito, Yuji Furumura, Toru Doki, Fumio Mieno, Mamoru Maeda. β-SiC/Si Hetero Junction Bipolar Transistors with High Current Gain, IEEE Electron Device Letters, IEEE Electron Devices Society?, Vol. EDL-9, No. 2, pp. 87-89, Feb. 1988.
• Toshihiro Sugii, Takashi Ito, Hajime Ishikawa. Low-Temperature Fabrication of Silicon Nitride Films by ArF Excimer Laser lrradiation, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. A, No. 46, pp. 249-253, 1988.
• Toshihiro Sugii, Tatsuya Yamazaki, Tetsu Fukano, Takashi Ito. Epitaxially Grown Base Transistor for High-Speed Operation, Electron Device Letters, IEEE, IEEE Electron Devices Society, Vol. 8, No. 11, pp. 528-530, Nov. 1987.
• Toshihiro Sugii, Takashi Ito, Yuji Furumura, Makoto Doki, Fumio Mieno, Mamoru Maeda. Si Heterojunction Bipolar Transistors with Single-Crystalline β-SiC Emitters, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 134, No. 10, pp. 2545-2549, Oct. 1987.
• Takashi Ito. Negative Drain Conductance in a Short-Channel Silicon MISFET, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 22, No. 5, pp. 434-437, Dec. 1986.
• 伊藤隆司. プラズマCVDと光CVD, 電気化学および工業物理化学, 電気化学会, Vol. 54, No. 11, pp. 919-922, Nov. 1986.
• 伊藤隆司. シリコンの酸化および窒化プロセスと特性制御, 表面, 広信社, Vol. 24, No. 7, pp. 363-370, July 1986.
• Takashi Ito, Hiroshi Horie, Tetsu Fukano, Hajime Ishikawa. A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode for MOS VLSI Circuits, IEE Trans Electron Devices, IEEE Electron Devices Society, Vol. ED-33, No. 4, pp. 464-468, Apr. 1986.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura. A High-Speed Write/Erase EAROM Cell, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 20, No. 4, pp. 535-545, Dec. 1984.
• Toshihiro Sugii, Takashi Ito, Hajime Ishikawa. Excimer Laser Enhanced Nitridation of Silicon Substrates, Applied Phisics Letters, American Institute of Physics, Vol. 49, No. 9, pp. 966-968, Nov. 1984.
• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Characteristics of Thermally Nitrided Silicon Dioxide Film and Plasma Enhancement, Journal of Electronic Materials, Springer, Vol. 13, No. 6, pp. 913-929, Aug. 1984.
• 土屋真平, 伊藤隆司, 中村哲夫. 傾斜したバンドギャップを持つ高速EAROMセル, 電子通信学会論文誌, 電子通信学会, Vol. J67-C, No. 6, pp. 505-512, June 1984.
• 伊藤隆司. Siの熱窒化による薄膜生成とその界面, 材料科学, 日本材料学会, Vol. 20, No. 4, pp. 196-200, Jan. 1984.
• 伊藤隆司. メタルCVD, 材料技術, 材料技術研究会, Vol. 2, No. 8, pp. 30-35, 1984.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Advantages of Thermal Nitride and Nirtoxide Gate Films in VLSI Process, IEEE Transactions on Electron Devices, IEEE Electron Devices Society, Vol. ED-29, No. 4, pp. 498-502, Apr. 1982.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Effect of Thermally Nitrided SiO2 (Nirtoxide) on MOS Charactristics, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 129, No. 1, pp. 184-188, 1982.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, IEEE Journal of Solid-State Circuits, IEEE Solid-State Circuits Society, Vol. SC-17, No. 5, pp. 852-856, 1982.
• Takashi Ito. Thermal Silicon Nitride Films-Growth and Application to LSI Devices, Semiconductor Technology, Global Trade Media, a trading division of SPG Media Limited., pp. 69-81, 1982.
• Ichiro Kato, Takashi Ito, Shnichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2 Films for Thin Gate Insulators, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 21-1, pp. 153-158, 1982.
• Takashi Ito, Ichiro Kato, Takao Nozak, Tetsuo Nakamura, Hajime Ishikawa. Plasma enhanced Thermal Nitridation of Silicon, Applied Phisics Letters, American Institute of Physics, Vol. 38, No. 5, pp. 370-372, 1981.
• Shinpei Hijiya, Takashi Ito, Masaichi Shinoda. Dual Dielectric Nonvolatile Memory Cells with Thermally Grown Silicon Nitride Films, Fujitsu Scientific and Technical Journal., Fujitsu Ltd., Vol. 16, No. 3, pp. 115-121, Sept. 1980.
• 伊藤隆司. Siの直接熱窒化, 応用物理, 応用物理学会, Vol. 50, No. 7, pp. 767-770, July 1980.
• Takashi Ito, Hideki Arakawa, Takao Nozaki, Hajime Ishikawa. Retardation of Destructive Breakdown of SiO2 Films Annealed in Ammonia Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 127, No. 10, pp. 2248-2251, 1980.
• Takashi Ito, Takao Nozaki, Hajime Ishikawa. Direct Thermal Nitridation of Silicon Dioxide Films in Ammonia Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 127, No. 9, pp. 2053-2057, 1980.
• Takashi Ito, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitridation of Silicon in Advanced LSI Processing, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 20-1, pp. 33-38, 1980.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda, Yukio Fukukawa. Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 125, No. 3, pp. 448-452, 1979.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda. Low Voltage Alterable EAROM Cells with Nitride-Barrier Avalanche Injection MIS(NAMIS), IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE Electron Devices Society, Vol. ED-26, No. 6, pp. 906-913, 1979.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda. Thermally Grown Silicon Nitride Films for High Performance MNS Devices, Applied Phisics Letters, American Institute of Physics, Vol. 32, No. 5, pp. 330-331, 1978.
• Takashi Ito, Shinpei Hijiya, Hidetoshi Nishi, Masaichi Shinoda, Toshio Furuya. Interfacial Doping by Recoil Implantation for Nonvolatile Memories, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 17-1, pp. 201-206, 1978.
• 伊藤隆司, 酒井義雄. GaAs-MIS-FET, 応用物理, 応用物理学会, Vol. 43, No. 10, pp. 1042-1045, Oct. 1974.
• 伊藤隆司, 酒井義雄. GaAs-MIS-FET, 応用物理, 応用物理学会, Vol. 43, No. 10, pp. 1042-1045, Oct. 1974.
• Takashi Ito, Yoshio Sakai. The GaAs Inversion-Type MIS Transistors, Solid-State Electronics, Solid-State Electronics, Vol. 17, pp. 751-759, July 1974.
• 伊藤隆司, 酒井 義雄. GaAｓ-絶縁膜界面における変性層トラップ密度と充放電特性, 電気学会論文誌, Vol. 94-C, No. 6, pp. 113-120, June 1974.
• 寺尾博, 伊藤隆司, 酒井義雄. InAs-MIS構造の界面特性と電界効果トランジスタへの応用, 電気学会論文誌, 電気学会, Vol. 94-C, No. 4, pp. 9-16, Apr. 1974.
• 伊藤隆司, 酒井義雄. GaAs表面への絶縁層の生成と界面特性, 電気学会論文誌, Vol. 93-A, No. 2, pp. 11-18, Feb. 1973.

国際会議発表 (査読有り)

• Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani, Takashi Ito. Bi-Axially Orientation-Controlled Si Thin Films on Glass Substrates by Double-Line-Beam CW Laser Annealing, Proc. of Ⅵ Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Materials, pp. 51-52, Jan. 2011.
• Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, Takashi Ito. The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate, 2009 International Conference on Solid State Devices and Materials (SSDM2009), Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), 2009 International Conference on Solid State Devices and Materials (SSDM2009), pp. 581-582, Nov. 2010.
• S. Fujii, S. Kuroki, K. Kotani, T. Ito. Enlargement of Crystal-Grains in Thin Silicon Films Using Continuous-Wave Laser Irradiation, 2010 International Conference on Solid State Devices and Materials (SSDM2003), Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010 International Conference on Solid State Devices and Materials (SSDM2003), pp. 696-697, Nov. 2010.
• Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito. Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization, 2010 International Conference on Solid State Devices and Materials (SSDM2010), 2010 International Conference on Solid State Devices and Materials (SSDM2010), 2010 International Conference on Solid State Devices and Materials (SSDM2010), pp. 1307-1308, Sept. 2010.
• Koji Kotani, Atsuo Sugimoto, Yutaka Omiya, Takashi Ito. Above-CMOS Metal-Pattern Technique for Flexible Inductance Adjustment in Rapid Prototyping of RF SoCs, 2010 International Conference on Solid State Devices and Materials (SSDM2010), 2010 International Conference on Solid State Devices and Materials (SSDM2010), 2010 International Conference on Solid State Devices and Materials (SSDM2010), pp. 243-244, Sept. 2010.
• S.Kuroki, S.Fujii, K.Kotani, T.Ito. Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser, 211th ECS Spring Meeting, ECS Transactions, 211th ECS Spring Meeting, ECS Transactions, 211th ECS Spring Meeting, ECS Transactions, Vol. 2, No. 10, pp. 71-76, May 2010.
• Hiroaki Arai, Naoto Miyamoto, Koji Kotani, Hisanori Fujisawa, Takashi Ito. A WiMAX Turbo Decoder with Tailbiting BIP Architecture, 15th Asia and South Pacific Design Automation Conference ASP-DAC 2010, 15th Asia and South Pacific Design Automation Conference ASP-DAC 2010, 15th Asia and South Pacific Design Automation Conference ASP-DAC 2010, pp. 371-372, Jan. 2010.
• Hiroaki Arai, Naoto Miyamoto, Koji Kotani, Hisanori Fujisawa, Takashi Ito. A WiMAX Turbo Decoder with Tailbiting BIP Architecture, IEEE Asian Solid-State Circuits Conference 2009 (A-SSCC 2009), IEEE Asian Solid-State Circuits Conference 2009 (A-SSCC 2009), IEEE Asian Solid-State Circuits Conference 2009 (A-SSCC 2009), pp. 153-156, Nov. 2009.
• Ken Haruyama, Koji Kotani, Takashi Ito. Highly-Accurate Ladder Model of Inductors on a Glass Substrate, 2009 International Conference on Solid State Devices and Materials (SSDM2009), Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), 2009 International Conference on Solid State Devices and Materials (SSDM2009), pp. 450-451, Oct. 2009.
• Takashi Ito, Masaki Midorikawa. Continuous Manipulation of Micro Particles by Use of Asymmetric Electrodes Array, 2009 International Conference on Solid State Devices and Materials (SSDM2009), Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), 2009 International Conference on Solid State Devices and Materials (SSDM2009), pp. 673-674, Oct. 2009.
• Koji Kotani, Yohei Koshimoto, Takashi Ito. Bitline-Capacitance-Insensitive Readout Circuit Using Capacitive-Feedback Charge-Integration Scheme for Low-Voltage FeRAM, 2009 International Conference on Solid State Devices and Materials (SSDM2009), Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), 2009 International Conference on Solid State Devices and Materials (SSDM2009), pp. 70-71, Oct. 2009.
• Jun Jiang, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito. Highly-(001)-Oriented Ferroelectric PZT Thin Films on Glass by CW Green-Laser Crystallization, 2009 International Conference on Solid State Devices and Materials (SSDM2009), Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), 2009 International Conference on Solid State Devices and Materials (SSDM2009), pp. 885-886, Oct. 2009.
• Koji Hara, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito. Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing, 2009 International Conference on Solid State Devices and Materials (SSDM2009), Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), 2009 International Conference on Solid State Devices and Materials (SSDM2009), pp. 330-331, Oct. 2009.
• Yutaka Omiya, Koji Kotani, Takashi Ito. Above-CMOS Inductor for Rapid Prototyping of Mixed-Signal SOCs, 2009 International Conference on Solid State Devices and Materials (SSDM2009), Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM2009), 2009 International Conference on Solid State Devices and Materials (SSDM2009), pp. 924-925, Oct. 2009.
• Koji Kotani, Takashi Ito. High-Efficiency CMOS Rectifier Circuits for UHF RFIDs Using Self-Vth Cancellation Techniquues, 2009 IEEE 8th International Conference on ASIC (ASICON 2009), 2009 IEEE 8th International Conference on ASIC (ASICON 2009), 2009 IEEE 8th International Conference on ASIC (ASICON 2009), pp. 549-552, Oct. 2009.
• Sang-su Seong, K. Kotani, T. Ito. Design of UHF RFID Antennas with Integrated Matching Circuitry for Bio-engineering Applications, Inter. Symp. on Medical, Bio-and Nano-Electronics, Inter. Symp. on Medical, Bio-and Nano-Electronics, Inter. Symp. on Medical, Bio-and Nano-Electronics, p. P-04, Mar. 2009.
• S.Morishita, T.Goto, I.Akutsu, K.Ohyama, T.Ito, T.Ohmi. High-Speed Gas Replacement in Plasma Process Chamber due to Precise Down-Flow of Gas Using a Upper Shower Plate, 30th International Symposium on Dry Process, Dry Process International Symposium （DPS2008）, 30th International Symposium on Dry Process, pp. 63-64, Nov. 2008.
• Fujii, S. Kuroki, X. Zhu, M. Numata, K. Kotani, T. Ito. Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization, 214th ECS Meeting, 214th ECS Meeting, 214th ECS Meeting, p. 2276, Oct. 2008.
• Sadaharu Morishita, Tetsuya Goto, Takashi Ito, Tadahiro Ohmi. Study on Gas Replacement Time in Plasma Process Chamber for Realizing Ideal Down Flow of Gas without Disturbance, Int. Symp. on Semicon. Manufacturing 2008 (ISSM2008), Int. Symp. on Semicon. Manufacturing 2008 (ISSM2008), Int. Symp. on Semicon. Manufacturing 2008 (ISSM2008), pp. 177-180, Oct. 2008.
• S. Fujii, S. Kuroki, M. Numata, K. Kotani, T. Ito. Roughness Reduction Technique for High Performance Poly-Si TFTs by CW Laser Lateral Crystallization with Cap SiO2 Thin Films, 2008 International Conference on Solid State Devices and Materials (SSDM2008), Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM2008), 2008 International Conference on Solid State Devices and Materials (SSDM2008), pp. 144-145, Sept. 2008.
• S.Kuroki, K. Tago, K. Kotani, T. Ito. Morphology Control of Ferroelectric PZT Thin Films Crystallized On Glass with Continuous-Wave Green Laser, 2008 International Conference on Solid State Devices and Materials (SSDM2008), Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM2008), 2008 International Conference on Solid State Devices and Materials (SSDM2008), pp. 140-141, Sept. 2008.
• Shuntaro Fujii, Shin-Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, Takashi Ito. Carrier Transport Mechanism in Poly-Si TFTs with One-Dimensionally Long Grains, 2008 International Conference in Solid State Devices and Materials (SSDM2008), Extended Abstracts of the 2008 International Conference in Solid State Devices and Materials (SSDM2008), 2008 International Conference in Solid State Devices and Materials (SSDM2008), Sept. 2008.
• S.Kuroki, K. Tago, K. Kotani, T. Ito. Morphology Control of Ferroelectric PZT Thin Films Crystallized On Glass with Continuous-Wave Green Laser, 2008 International Conference on Solid State Devices and Materials (SSDM2008), Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM2008), 2008 International Conference on Solid State Devices and Materials (SSDM2008), pp. 140-141, Sept. 2008.
• Shuntaro Fujii, Shin-Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, Takashi Ito. Carrier Transport Mechanism in Poly-Si TFTs with One-Dimensionally Long Grains, 2008 International Conference in Solid State Devices and Materials (SSDM2008), Extended Abstracts of the 2008 International Conference in Solid State Devices and Materials (SSDM2008), 2008 International Conference in Solid State Devices and Materials (SSDM2008), pp. 766-767, Sept. 2008.
• Takashi Ito, Rinji Sugino. Micro- and Nano-Cavity Formation on Silicon by Using A Very Thin Native-Oxide Membrane, The 7th International Symposium on Electrochemical Micro & Nano system Technologies(EMNT2008), The 7th International Symposium on Electrochemical Micro & Nano system Technologies(EMNT2008), The 7th International Symposium on Electrochemical Micro & Nano system Technologies(EMNT2008), p. 81, Sept. 2008.
• Xiaoli Zhu, Shin-Ichiro Kuroki, Shuntaro Fujii, Masayuki Numata, Koji Kotani, Takashi Ito. Research on Poly-Si TFTs with One-Dimensionally Long Grains Formed by CW Laser Lateral Crystallization, The 1st Student Organizing International Mini-Conference on Information Electronics Systems (SOIM-GCOE08), Proc. on SOIM-GCOE08, The 1st Student Organizing International Mini-Conference on Information Electronics Systems (SOIM-GCOE08), p. 59, Aug. 2008.
• Takashi Ito, Koji Kotani, Toshihiko Miyashita. Triode-like Non-Saturation Characteristics of SOI-MOSFETs under Reverse Drain Bias, Fourth Workshop of the Thermatic Network on Silicon-On-Insulator, Technology, Devices and Circuits (EUROSOI 2008), Fourth Workshop of the Thermatic Network on Silicon-On-Insulator, Technology, Devices and Circuits (EUROSOI 2008), Fourth Workshop of the Thermatic Network on Silicon-On-Insulator, Technology, Devices and Circuits (EUROSOI 2008), pp. 63-64, Jan. 2008.
• Koji Kotani, Takashi Ito. High Efficiency CMOS Rectifier Circuit with Self-Vth-Cancellation and Power Regulation Functions for UHF RFIDs, IEEE Asian Solid-State Circuits Conference 2007 (A-SSCC 2007), IEEE Asian Solid-State Circuits Conference 2007 (A-SSCC 2007), IEEE Asian Solid-State Circuits Conference 2007 (A-SSCC 2007), pp. 119-122, Nov. 2007.
• X. Zhu, S. Kuroki, K. Kotani, T. Ito. Advantages of Nano-grating Substrates in CMOS -FET Characteristics, 212th Electrochem. Soc. Meeting, 212th Electrochem. Soc. Meeting, 212th Electrochem. Soc. Meeting, p. E9 1322, Oct. 2007.
• Shin-Ichiro Kuroki, Masayuki Toda, Masaru Umeda, Koji Kotani, Takashi Ito. Permittivity Enhancement of Mechanically Strained SrTiO3 MIM Capacitor, 212th Electrochem. Soc. Meeting, 212th Electrochem. Soc. Meeting, 212th Electrochem. Soc. Meeting, p. E3 1101, Oct. 2007.
• S. Fujii, S. Kuroki, Z. Xiaoli, M. Numata, K. Kotani, T. Ito. ateral Recrystallized Si Thin Films with Large Tensile Strain for High Performance Thin Film Transistors, 2007 International Conference on Solid State Devices and Materials (SSDM2007), Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials (SSDM2007), 2007 International Conference on Solid State Devices and Materials (SSDM2007), 566-567, Sept. 2007.
• X. Zhu, S. Kuroki, K. Kotani, M. Fukuda, H. Shido, Y. Mishima, T. Ito. The Drivability Enhancement Mechanisms in Nano-grating MOSFETs, 2007 International Conference on Solid State Devices and Materials (SSDM2007), Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials (SSDM2007), 2007 International Conference on Solid State Devices and Materials (SSDM2007), pp. 204-205, Sept. 2007.
• Shuntaro Fujii, Shin-ichiro Kuroki, Koji Kotani, Takashi Ito. Two-dimensional recrystallization of thin Si films using CW laser irradiation, Int. Symp. on Bio-and Nano-Electronics, Int. Symp. on Bio-and Nano-Electronics, Int. Symp. on Bio-and Nano-Electronics, p. 127, Dec. 2006.
• Rinji Sugino, Takashi Ito. A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Application for Nano-Pipe Array and Micro-Diaphragm on Si Substrate, Technical Digest of International Electron Devices Meeting (IEDM2006), Technical Digest of International Electron Devices Meeting (IEDM2006), Technical Digest of International Electron Devices Meeting (IEDM2006), Vol. 19.6.1, pp. 529-532, Dec. 2006.
• Sakai Yasufumi, Koji Kotani, Takashi Ito. Analysis of Power Conversion Efficiency in Dickson Charge Pump for RFID, International Symposium on Bio- and Nano-Electronics, International Symposium on Bio- and Nano-Electronics, International Symposium on Bio- and Nano-Electronics, pp. 135-136, Dec. 2006.
• Makoto Miyamoto, Shin-Ichiro Kuroki, Koji Kotani, Satoshi Ueyama, Junji Hirotsuji, Takashi Ito. High-Density Micro bubble Formation by Utilizing the Specific Additives for Chemical-less degreasing Process, MRS Meeting 2006, Abstracts of MRS Meeting, MRS Meeting 2006, pp. A3-65, Nov. 2006.
• Hisakazu Miyatake, Takashi Ito. ArF Photo Resist Pattern Improvement by VUV Cure”, 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), Vol. 106, No. 137, pp. 119-122, July 2006.
• S.Kuroki, S.Fujii, K.Kotani, Takashi Ito. Large Grain Growth of Silicon Thin Films by using CW Green Laser, 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), Vol. 106, No. 137, pp. 119-122, July 2006.
• K.Kotani, K.Tago, S.Kuroki, Takashi Ito. Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser, 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), 2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2006), Vol. 106, No. 137, pp. 277-280, July 2006.
• Shin-ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito. Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser, 209th Electrochem. Soc. Meeting, 209th Electrochem. Soc. Meeting, 209th Electrochem. Soc. Meeting, p. 354, May 2006.
• Takashi Ito, Shin-ichiro Kuroki, Koji Kotani. Drivability Enhancement of MOS Transistors Fabricated on Nano-grating Silicon Wafers, 09th Electrochem. Soc. Meeting, 09th Electrochem. Soc. Meeting, 09th Electrochem. Soc. Meeting, p. 360, May 2006.
• Takashi Ito. Two-dimensional recrystallization of thin Si films using CW laser irradiation, Int. Symp. on Bio-and Nano-Electronics, Int. Symp. on Bio-and Nano-Electronics, p. 127, 2006.
• Takashi Ito. Ultra-clean Processing of Silicon Surfaces with UV-radicals, Proc. Int. Symp. on Surface Science for Micro- and Nano-Device Fabrication, Proc. Int. Symp. on Surface Science for Micro- and Nano-Device Fabrication, p. 187, 1999.
• Kunihiro Suzuki, Tetsu Fukano, Tatsuya Yamazaki, Shinpei Hijiya, Takashi Ito, Hajime Ishikawa. Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy, Tech. Dig. of, IEDM, Tech. Dig. of, IEDM, pp. 811-813, 1998.
• Takashi Ito, Rinji Sugino. Dry Cleaning Technologies Using UV-Excited Radicals and Cryogenic Aerosols, Proc. Fourth Int. Symp. on Ultra Clean Processing of Silicon Surfaces, Proc. Fourth Int. Symp. on Ultra Clean Processing of Silicon Surfaces, pp. 219-224, 1998.
• Takashi Ito, Tatsuya Yamazaki, Satoru Watanabe, Yasuo Nara, Hajime Ishikawa. Photoenhancement in Low-Temperature Silicon Epitaxy, Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting, Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting, No. 183, p. 285, 1998.
• Takashi Ito. TECHNOLOGY ISSUES FOR FUTURE ULSI PRODUCTION, Symposium for Environmental Technologies and Strategies in Semiconductor Industry Sponsored by National Science Council(NSC), Symposium for Environmental Technologies and Strategies in Semiconductor Industry Sponsored by National Science Council(NSC), pp. 1-5, 1997.
• Takashi Ito. Process Expectation and Implications of Highly Purified Gases for the Next Generation ULSI Production, Proceeding of 6th International Pure Gas Workshop, Proceeding of 6th International Pure Gas Workshop, pp. l-12, 1996.
• Yoshihiro Sugita, Naoki Awaji, Satoshi Ohkubo, Satoru Watanabe, Satoshi Komiya, Takashi Ito. X Ray Refractometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment, Ext. Abst. of 1995 Int. Conf. on SSDM, Ext. Abst. of 1995 Int. Conf. on SSDM, pp. 836-837, 1995.
• Rinshi Sugino, Yoshiko Okui, Mayumi Shigeno, Satoshi Ohkubo, Kanetake Takasaki, Takashi Ito. Dry Cleaning of Si and SiO2 Surfaces Using SiC14 System, Proc. Int. Symp. on Semicon. Manufacturing, Proc. Int. Symp. on Semicon. Manufacturing, pp. 262-265, 1995.
• Hiromasa Hoko, Akira Ohishi, Yoshihiro Arimoto, Takashi Ito. Global Planarization for 4 mm Square Pattern, Dumic Conference, Dumic Conference, Vol. 101D, No. 95, pp. 163-167, 1995.
• Rinshi Sugino, Toshiro Nakanishi, Kanetake Takasaki, Takashi Ito. Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching, Ext. Abs. of Int. Conf. on SSDM, Ext. Abs. of Int. Conf. on SSDM, 1995.
• Takashi Ito. Ultraclean Wafer Surfaces for High Performance ULSI Processing, Proc, Int, Symp. on Semicon. Manufacturing, Proc, Int, Symp. on Semicon. Manufacturing, pp. 103-106, 1994.
• Takashi Ito. Formation of Clean Silicon Surfaces by Halogen Photo-Excitation and Hydrogen Termination, Proc. International Conf. on Advanced Microelectron. and Processing, Proc. International Conf. on Advanced Microelectron. and Processing, pp. 45-50, 1994.
• Satoru Watanabe, Kei Horiuchi, Takashi Ito. Stable Hydride Structure on Si(lll) Surface in Pure Water, Proc. MRS Symp., Proc. MRS Symp., Vol. 315, p. 458, 1993.
• Fumio Sugimoto, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. A pH- Controlled Chemical Mechanical Polishing Method for Ultra-Thin Bonded SOI Wafer, Dig. of Tech. Papers, Symp. on VLSI Tech., Dig. of Tech. Papers, Symp. on VLSI Tech., pp. 113-114, 1993.
• Yasuo Nara, Yoshihiro Sugita, Kei Horiuchi, Takashi Ito. SR-Assisted Epitaxy and Surface Cleaning of Silicon, Proc. of A Workshop on Two-dimensional Semiconductor Research using Synchrotron Radiation, Proc. of A Workshop on Two-dimensional Semiconductor Research using Synchrotron Radiation, p. 15, 1993.
• Kunihiro Suzuki, Tetsu Tanaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito. Analytical Surface Potential Expression for Double-Gate SOI MOS FETS, Proc. Int. Workshop on VLSI Process and Device Modeling, Proc. Int. Workshop on VLSI Process and Device Modeling, pp. 150-151, 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Surface Cleaning for Silicon Epitaxy Using Photoexcited Fluorine Gas, Proc. of MRS Symposium, Proc. of MRS Symposium, 1993.
• Takashi Ito, Rinshi Sugino, Yasuhisa Sato. Reliable Thin Gate Oxide Film Formed After UV Cleaning, Proc. 4th Int. Symp. on ULSI Sci. and Tech., Proc. 4th Int. Symp. on ULSI Sci. and Tech., p. 163, 1993.
• Takashi Ito. Photo-Excited Cleaning and Film Growth for ULSI, Proc. of Workshop on Photo-Excited Processes in Engineering, Proc. of Workshop on Photo-Excited Processes in Engineering, p. 110, 1993.
• Akira Sato, Youichi Momiyama, Yasuo Nara, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. A 0.5μm EEPROM Cell Using Poly-Si TFT Technology, Proc. 5lth Annual Device Research Conference, Proc. 5lth Annual Device Research Conference, 1993.
• Tatsuya Yamazaki, Kenichi Goto, Tetsu Fukano, Yasuo Nara, Toshihiro Sugii, Takashi Ito. 2l psec Switching 0.13μm-CMOS at Room Temperature Using High Performance Co Salicide Process, IEDM Dig. of Tech., IEDM Dig. of Tech., pp. 906-909, 1993.
• Takashi Ito, Rinshi Sugino, Yasuhiro Sato, Masaki Okuno, Akira Osawa, Takayuki Aoyama, Tatsuya Yamazaki, Yoshihiro Arimoto. Photo-Excited Cleaning of Silicon with Chlorine and Fluorine, MRS Symp. Proceeding, MRS Symp. Proceeding, 1992.
• Yoshihiro Arimoto, Shinpei Hijiya, Takashi Ito. Advanced Bipolar and MOS Devices Based on Silicon Wafer-Bonding, Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS, Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS, pp. 414-426, 1992.
• Yasuo Nara, Yoshio Sugita, Kei Horiuchi, Takashi Ito. Evaluation of Photoemitted Current from SiO2 Film on Silicon during Synchrotron Radiation lrradiation, Proc. of Microprocess Conference, Proc. of Microprocess Conference, pp. 184-185, 1992.
• Naoshi Higaki, Tetsu Fukano, Atsushi Fukuroda, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. A Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI, Dig. Tech. Papers of Symp. on VLSI Tech., Dig. Tech. Papers of Symp. on VLSI Tech., pp. 53-54, 1991.
• Yasuhisa Sato, Rinshi Sugino, Masaki Okuno, Nobuo Kikuchi, Junichi Teramae, Akinao Ogawa, Shinpei Hijiya, Takashi Ito. Photo-Excited Dry Cleaning for ULSI, Proc. of VLSI Symp. on Tech. System and Application, Proc. of VLSI Symp. on Tech. System and Application, 1991.
• Rinshi Sugino, Masaki Okuno, Yoshiko Okui, Mayumi Shigeno, Yasuhisa Sato, Akira Osawa, Takashi Ito. UV Excited Dry Cleaning of Silicon Surfaces Contaminated with lron and Aluminum, Proc. of 2nd Int. Symp. on Cleaning Technology in Semicon. Device Manufacturing, ECS Fall Meeting, Proc. of 2nd Int. Symp. on Cleaning Technology in Semicon. Device Manufacturing, ECS Fall Meeting, pp. 512-513, 1991.
• Takashi Ito. Etching of SiO2 Film by Synchrotron Radiation in Hydrogen and its Application to Low Temperature Surface Cleaning, Proceeding of New Aspects of Photon Induced Processes on Surfaces, First International Forum of Optoelectronics Industry, Proceeding of New Aspects of Photon Induced Processes on Surfaces, First International Forum of Optoelectronics Industry, p. 86, 1991.
• Satoru Watanabe, Noriaki Nakayama, Takashi Ito. Infrared Observation of Hydrogen-Terminated Silicon Surface with VUV Irradiation, Proceeding of New Aspects of Photon Induced Processes on Surfaces, First International Forum of Optoelectronics Industry, Proceeding of New Aspects of Photon Induced Processes on Surfaces, First International Forum of Optoelectronics Industry, p. 85, 1991.
• Takashi Ito. Wafer Dry Cleaning with Photo-Excited Halogen Radicals, Proc. Inst. of Environmental Sciences, 37th Annual Meeting, Proc. Inst. of Environmental Sciences, 37th Annual Meeting, pp. 808-813, 1991.
• Atsushi Fukuroda, Toru Miyabo, Manabu Kojima, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, pp. 168-169, 1991.
• Satoru Watanabe, Mayumi Shigeno, Noriaki Nakayama, Takashi Ito. Silicon Monohydride Termination of Silicon (111) Surface Formed by Boiling Water, Ext. Abst. of 1991 Int. Conf. on SSDM, Ext. Abst. of 1991 Int. Conf. on SSDM, pp. 502-503, 1991.
• Manabu Kojim, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed Epitaxial Base Transistors on Bonded SOI, IEEE 1991 ,Bipolar Circuits and Technology Meeting, IEEE 1991 ,Bipolar Circuits and Technology Meeting, pp. 63-66, 1991.
• Tatsuya Yamazaki, Itaru Namura, Toshihiro Sugii, Hiroshi Goto, Akinori Tahara, Takashi Ito. High Speed Si Hetero-Bipolar Transistor with a SiC Wide-gap Emitter and an Ultra-thin Heavily Doped Photoepitaxially Grown Base, Proc. IEEE 1991 Bipolar Circuits and Technology Meeting, Proc. IEEE 1991 Bipolar Circuits and Technology Meeting, pp. 71-74, 1991.
• Takashi Ito. Wafer Dry Cleaning with Photo-Excited Halogen Radicals, Proc. on SEMI/Korea Technology Symp., Proc. on SEMI/Korea Technology Symp., p. 20, 1991.
• Takashi Ito, Toshihiro Sugii, Tatsuya Yamazaki. SiC(F) Hetero-Emitter and Epitaxial Base Bipolar Transistors, 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials, 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials, 1991.
• Takashi Ito. Silicon Hetero-Bipolar Transistor Technologies, Proc. 7th Japan-Germany Technology Forum, Proc. 7th Japan-Germany Technology Forum, p. 35, 1991.
• Tatsuya Yamazaki, Ikuo Namura, Hiroshi Goto, Atsushi Tahara, Takashi Ito. A 11.7 GHz l/8 Divider using 43 GHz Si High Speed Bipolar Transistor with Photo-epitaxially Grown Ultra Thin Base, Tech. Digest of IEDM, Tech. Digest of IEDM, pp. 309-312, 1990.
• Takashi Ito, Rinshi Sugino, Satoru Watanabe, Yasuo Nara, Yasuhisa Sato. UV-Enhanced Dry Cleaning of Silicon Wafers, Proc. Int. Symp. on Cleaning Technology in Semicon. Device, Proc. Int. Symp. on Cleaning Technology in Semicon. Device, p. 114, 1990.
• Yasuhisa Sato, Rinshi Sugino, Masaki Okuno, Takashi Ito. Reliability Improvement of the MOS Structures Using Photo-Excited Dry Cleaning Before Oxidation, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, 1990.
• Toshihiro Sugii, Takayuki Aoyama, Yuji Furumura, Takashi Ito. SiC Growth and Its Application to Si-HBTs, Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures, Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures, p. 124, 1990.
• Kazuhisa Sugiyama, Takayuki lgarashi, Kazunori Moriki, Yoshikatsu Nagasawa, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori. Silicon- Hydrogen Bonds in Native Oxides Formed During Wet Chemical Treatments, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, 1990.
• Satoru Watanabe, Takashi Ito. Diborane Addition Effect on Second Order Reactions of Si Photo-CVD under Vacuum Ultraviolet lrradiation, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, pp. 345-346, 1990.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Process Technologies for Advanced Si Bipolar Devices, Ext. Abst, of Int. Conf. on SSDM, Ext. Abst, of Int. Conf. on SSDM, pp. 817-818, 1990.
• Kazuo Takase, Toshio Igarashi, Norio Miyata, Koji Moriki, Rinshi Sugino, Yasuo Nara, Takashi Ito, Minoru Fujisawa, Takeo Hattori. Native Oxide Formed During Wet Chemical Treatments, Ext. Abs. of 2lst Conf. on SSDM, Ext. Abs. of 2lst Conf. on SSDM, pp. 393-394, 1989.
• Kunihiro Suzuki, Tetsu Fukano, Hiroshi Ishiwari, Tatsuya Yamazaki, Masao Taguchi, Takashi Ito, Hajime Ishikawa. 50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth, Digest of Symp. on VLSI Technology, Digest of Symp. on VLSI Technology, pp. 91-93, 1989.
• Toshihiro Sugii, Tatsuya Yamazaki, Kunihiro Suzuki, Tetsu Fukano, Takashi Ito. Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 659-662, 1989.
• Satoru Watanabe, Tatsuya Yamazaki, Takashi Ito. Wavelength Dependence Boron Doping in Silicon Photochemical Vapor Deposition, Proc. of SPIE, Proc. of SPIE, Vol. 119, No. 10-1, pp. 104-108, 1989.
• Satoru Watanabe, Rinshi Sugino, Tatsuya Yamazaki, Yasuo Nara, Takashi Ito. Wafer-Cleaning with Photo-Excited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy, Dig. of 2nd MicroProcess Conf., Dig. of 2nd MicroProcess Conf., pp. 120-121, 1989.
• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Abrupt and Defect-free p+-n+ Junction Formed by Low-Temperature Photo-Epitaxy with Continuous Boron and Phosphorous Doping, Ext. Abs. of 2lst Conf. on SSDM, Ext. Abs. of 2lst Conf. on SSDM, pp. 61-62, 1989.
• Rinshi Sugino, Ryuji Takizawa, Yasuhisa Sato, Takashi Ito. Characterization of Si-SiO2 Interfaces Formed After Photo-Excited Cleaning, Ext. Abs. of 2lst Conf. on SSDM, Ext. Abs. of 2lst Conf. on SSDM, pp. 417-418, 1989.
• Takeo Hattori, Kazuki Takase, Hiroshi Yamagishi, Rinshi Sugino, Yasuo Nara, Takashi Ito. Chemical Structures of Native Oxides Formed During Wet Chemical Treatments, Abstract of Electronic Mat. Conf., Abstract of Electronic Mat. Conf., 1989.
• Satoru Watanabe, Tatsuya Yamazaki, Yasuo Nara, Takashi Ito. Photo- Enhanced Boron Doping in Low-Temperature Silicon Epitaxy and its FTIR Study, Ext. Abs. of 20th Conf. on SSDM, Ext. Abs. of 20th Conf. on SSDM, pp. 117-118, 1988.
• Takashi Kato, Takashi Ito, Hajime Ishikawa. In Situ,Carbon-Doped Aluminum Metallization for VLSI/ULSI Interconnection, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 458-460, 1988.
• Takayuki Aoyama, Toshihiro Sugii, Takashi Ito. Determination of Band Lineup In β-SiC/Si Hetero Junction for HBTs, Abs. 2nd Int. Conf. on Formation of Semiconductor Interfaces, Abs. 2nd Int. Conf. on Formation of Semiconductor Interfaces, p. 143, 1988.
• Tetsuo Eshita, Kunihiro Suzuki, Toru Hara, Fumio Mieno, Yuji Furumura, Mamoru Maeda, Toshihiro Sugii, Takashi Ito. Low-Temperature Heteroepitaxy of β- SiC on Si(111) Substrates, Proc. MRS Symp., pp. 357-362, 1988.
• Takashi Ito, Rinshi Sugino, Tatsuya Yamazaki, Satoru Watanabe, Yasuo Nara. Photochemical Cleaning of Silicon Wafers with Halogen Radicals, 1987 ECS Fall Meeting, 1987 ECS Fall Meeting, pp. 1076-1077, 1987.
• Tatsuya Yamazaki, Satoru Watanabe, Toshihiro Sugii, Takashi Ito. Ultra Shallow p+ /n Junction Formed by Photo-Enhanced Low-Temperature Epitaxy, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 586-589, 1987.
• Rinshi Sugino, Yasuo Nara, Tatsuya Yamazaki, Satoru Watanabe, Takashi Ito. Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals, Ext. Abs. of 19th Conf. on SSDM, Ext. Abs. of 19th Conf. on SSDM, pp. 207-208, 1987.
• Toshihiro Sugii, Tatsuya Yamazaki, Tetsu Fukano, Takashi Ito. Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy, Dig. of Symp. on VLSI Tech., Dig. of Symp. on VLSI Tech., pp. 35-36, 1987.
• Kunihiko Wada, Takashi Ito. Growth and Properties of Silicon Dioxide Films, Proc. Symp. on ULSI Science and Tech., ECS Spring Meeting, Proc. Symp. on ULSI Science and Tech., ECS Spring Meeting, p. 119, 1987.
• Takashi Ito, Hajime Ishikawa. Current Status of Surface Nitridation on Silicon and Silicon-Dioxide, Proc. 5th Int. Symp. on Silicon Mat. Sci, and Tech., ECS Fall Meeting, Proc. 5th Int. Symp. on Silicon Mat. Sci, and Tech., ECS Fall Meeting, pp. 484-497, 1986.
• Toshihiro Sugii, Takashi Ito, Yuji Furumura, Mikio Doki, Fumio Mieno, Mamoru Maeda. Epitaxial SiC Emitter for High Speed Bipolar VLSI's, Dig. Symp. on VLSI Tech., Dig. Symp. on VLSI Tech., pp. 45-46, 1986.
• Takashi Ito, Hajime Ishikawa. Thermal Nitridation Technologies for VLSI, Proc. Int. Conf. on Semicon. and Integrated Circ. Tech., Proc. Int. Conf. on Semicon. and Integrated Circ. Tech., pp. 53-54, 1986.
• Tatsuya Yamazaki, Rinshi Sugino, Takashi Ito, Hajime Ishikawa. Photo-Chemical Effects for Low Temperature Si Epitaxy, Ext. Abst. of 1986 Int. Conf. on SSDM, Ext. Abst. of 1986 Int. Conf. on SSDM, pp. 213-214, 1986.
• Masaru Muto, Takashi Kato, Takashi Ito, Hajime Ishikawa. ZrSi2 for LSI Contat System, Proc. of Tech. papers on Int. Symp. on VLSI Tech. Sys. and Appli., Proc. of Tech. papers on Int. Symp. on VLSI Tech. Sys. and Appli., pp. 143-144, 1985.
• Takashi Ito, Ichiro Kato, Hajime Ishikawa. Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide, MRS Symp. Proc. 38, MRS Symp. Proc. 38, pp. 474-485, 1985.
• Takashi Ito, Hiroshi Horie, Tetsu Fukano, Hajime Ishikawa. A Nitride Isolated Molybdenum-Polysilicon Gate Electrode, Dig. of Tech. Papers on 1985 Symp. on VLSI Tech., Dig. of Tech. Papers on 1985 Symp. on VLSI Tech., pp. 60-61, 1985.
• Masaru Muto, Takashi Kato, Takashi Ito, Hajime Ishikawa. Self-aligned Silicidation of Zr and Its Comparison with Ti, Ext. Abst. of 17th Conf. on SSDM, Ext. Abst. of 17th Conf. on SSDM, 1985.
• Tatsuya Yamazaki, Takashi Ito, Hajime Ishikawa. Disilane Photoepitaxy for VLSI, Dig. of Tech. Papers on 1984 Symp. on VLSI Tech., Dig. of Tech. Papers on 1984 Symp. on VLSI Tech., pp. 56-57, 1984.
• Tetsu Fukano, Takashi Ito, Tokushige Hisatsugu, Hajime Ishikawa. Ultra Sharp Trench Capacitors Formed by Peripheral Etching, Ext. Abst. of 16th (1984 International Conf. on SSDM, Ext. Abst. of 16th (1984 International Conf. on SSDM, pp. 471-472, 1984.
• Toshihiro Sugii, Takashi Ito, Hajime Ishikawa. Low Temperature Nitridation of Silicon by Excimer Laser lrradiation, Ext. Abst. of 16th (1984 International Conf. on SSDM, Ext. Abst. of 16th (1984 International Conf. on SSDM, pp. 433-444, 1984.
• Hiroshi Horie, Tetsu Fukano, Takashi Ito, Hajime Ishikawa. Multiple Self-Alignment MOS Technology (MUSA/MOS), Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 398-401, 1984.
• Takashi Ito, Ichiro Kato, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Thin Films for VLSI Circuits, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, pp. 295-301, 1983.
• Takashi Kato, Takashi Ito, Masao Taguchi, Tetsuo Nakamura, Hajime Ishikawa. Interfacial Oxidation of Ta205-Si Systems for High Density DRAM, Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., pp. 86-87, 1983.
• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Plasma Nitrided Silicon Dioxide Film for VLSI Gate Dielectrics, Elec. Mat. Conf., Elec. Mat. Conf., Vol. 6, No. 13, pp. 913-929, 1983.
• Kiyoshi Ozawa, Takashi Ito, Hajime Ishikawa. UV Resist Stripping for High Speed and Damage Free Process, Ext. Abst. of 15th Conf. on SSDM, Ext. Abst. of 15th Conf. on SSDM, pp. 125-126, 1983.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 116-117, 1982.
• Takashi Ito, Toshihiko Sugii, Tetsuo Nakamura. Aluminum Plasma CVD for VLSI Circuit Inter-connections, Dig. of Tech. Papers on 1982 Symp. on VLSI Tech., Dig. of Tech. Papers on 1982 Symp. on VLSI Tech., pp. 20-21, 1982.
• Masao Taguchi, Takashi Ito, Tetsu Fukano, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Capacitors for High Density RAMs, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 400-403, 1981.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Thin Gate Insulators for VLSI, Dig. of Tech. Papers on 1981 Symp. on VLSI Tech., Dig. of Tech. Papers on 1981 Symp. on VLSI Tech., pp. 72-73, 1981.
• Ichiro Kato, Takashi Ito, Shinichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2. Films for Thin Gate Insulators, Ext. Abs. on 13th Conf. on SSDM, Ext. Abs. on 13th Conf. on SSDM, pp. 73-74, 1981.
• Takashi Ito, Takao Nozaki, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitride Gate FET Technology for VLSI Devices, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 73-74, 1980.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Nobuo Toyokura, Hajime Ishikawa. Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 590-593, 1980.
• Takashi Ito, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitridation of Silicon in Advanced LSI Processing, Ext. Abs. on 12th Conf. on SSDM, Ext. Abs. on 12th Conf. on SSDM, pp. 9-10, 1980.
• Takashi Ito, Shinpei Hijiya, Hajime Ishikawa, Masaichi Shinoda. 0V Write/Erase EAROM Cells with Directly Nitrided Silicon Nitride Films as First Insulating Layers, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 284-286, 1977.
• Takashi Ito, Shinpei Hijiya, Hidetoshi Nishi, Masaichi Shinoda, Toshio Furuya. Interfacial Doping by Recoil Implantation for Nonvolatile Memories, Ext. Abs. on 9th Conf: on SSDM, Ext. Abs. on 9th Conf: on SSDM, pp. 61-62, 1977.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Shinpei Hijiya, Masaichi Shinoda, Yukio Fukukawa. Thermally Nitrided Silicon Films By Direct Reaction, Abs. of 150th ECS Fall Meeting, Abs. of 150th ECS Fall Meeting, p. 310, 1976.

国内会議発表 (査読有り)

• Shin-Ichiro Kuroki, Yuji Kawasaki, Koji Kotani, Takashi Ito, Katsuyoshi Washio. Crystal Growth of Highly Biaxially-Oriented Poly-Si Thin Films by W-Line Beam Continuous-Wave Laser Lateral Crystallization, AM-FPD2011, The proceedings of AM-FPD11, pp. 215-216, June 2011.
• Tetsu Fukano, Takashi Ito, Hajime Ishikawa. Microwave Annealing for Low Temperature VLSI Processing, Tech. Dig. of IEDM, pp. 224-225, 1985.

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