論文

• An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma, Japanese Journal of Applied Physics, Volume 63, Number 6, 066503, June 2024.  公式リンク  
  
• Yukimura Tokita, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 4, 04SP31, Apr. 2024.  公式リンク  
  
• Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer, Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, p. SC1015, Jan. 2023.  公式リンク  
  
• Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact, IEEE Journal of the Electron Devices Society, IEEE, Vol. 11, p. 15-21, Nov. 2022.  公式リンク  
  
• Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure, Scientific Reports, Vol. 12, pp. 17199, Oct. 2022.
• Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing, Japanese Journal of Applied Physics, Vol. 61, 075506, July 2022.
• M. Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, Yoshiaki Daigo, Ichiro Mizushima, T. Yoda, K. Kakushima. Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate, Japanese Journal of Applied Physics, Vol. 61, SH1011, June 2022.
• Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, Volume 61, June 2022.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP), Vol. 61, May 2022.
• Atsuki Miyata, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure, Japanese Journal of Applied Physics, 61, SH, SH1005, Apr. 2022.
• Ryota Shibukawa, Sung Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films, Japanese Journal of Applied Physics, Volume 61, Apr. 2022.
• Takamasa KAWANAGO, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya HOSHII, Kuniyuki Kakushima, Kazuo TSUTSUI, Hitoshi WAKABAYASHI. Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Emi Kano, Nobuyuki Ikarashi, Hitoshi Wakabayash. Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics (JJAP), Vol. 61, No. 2, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box, Journal of the Electron Devices Society (J-EDS), Vol. 9, p. 1117, Aug. 2021.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBA05, Apr. 2021.
• S-L. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, T-K. Chung, E. Chang, K. Kakushima. Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering, Applied Physics Letters, Vol. 118, No. 8, Page 82902, Feb. 2021.
• Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30901, Feb. 2021.
• Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. A possible origin of the large leakage current in ferroelectric Al1-xScxN films, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30907, Feb. 2021.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH10, Feb. 2021.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH04, Jan. 2021.
• Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui. N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation, Applied Physics Express (APEX), No. 2, pp. 21002, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH05, Jan. 2021.
• Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing, Journal of the Electron Devices Society (J-EDS), Vol. 9, Page 278-285, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation, Japanese Journal of Applied Physics (JJAP), Vol. 59, No. 10, Page 105501, Sept. 2020.
• Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo. Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 59, No. 8, Page 80906, Aug. 2020.
• Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs, IEEE Trans. On Semiconductor Manufactureing, Vol. 33, No. 2, pp. 159-165, May 2020.
• Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• Jinan Song, Lyu Wei Lin, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto. Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs, Japanese Journal of Applied Physics, Vol. 59, No. SG, Mar. 2020.
• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Kazuo Tsutsui, Yoshitada Morikawa. Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography, Japanese Journal of Applied Physics, Vol. 59, Jan. 2020.
• Kazunori Matsuda, Hiroki Uyama, Kazuo Tsutsui. Nonlinear Piezoresistance Coefficients of Semiconductors, Journal of Applied Physics, American Institute of Physics, Vol. 128, Dec. 2019.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization, Journal of the Electron Devices Society (J-EDS), IEEE, Vol. 7, No. 1, pp. 1258-1263, Dec. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing, Applied Physics Letters, Vol. 115, p. 192404, Nov. 2019.
• Kuan Ning Huang, Yueh-Chin Lin, Jia Ching Lin, Chia Chieh Hsu, Jin Hwa Lee, Chia-Hsun Wu, Jing Neng Yao, Heng-Tung Hsu, Venkatesan Nagarajan, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Edward Yi Chang, Chao Hsin Chien. Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications, Journal of Electronic Materials, Vol. 49, pp. 1348–1353, Nov. 2019.
• Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI. Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates, Japanese Journal of Applied Physics, Vol. 58, No. 6, pp. 061006, June 2019.  公式リンク  
  
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration, IEEE Journal of the Electron Devices Society, IEEE, Vol. 6, pp. 1251 - 1257, Nov. 2018.  公式リンク  
  
• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout, Journal of the Electron Devices Society (J-EDS), vol. 8, pp. 1244-1250, Nov. 2018.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi, N. Ikarashi. Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing, Journal of the Electron Devices Society, Vol. 7, No. 1, p. 2, Oct. 2018.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing, JPN J APPL PHYS, 57, 07MA04, June 2018.
• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakaw, Kuniyuki Kakushima. Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing, Microelectronics Reliability, vol. 84, pp. 226-229, May 2018.
• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima. Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors, Microelectronics Reliability, vol. 84, pp. 248-252, May 2018.
• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Shin-ichi Nishizawa, Hiromichi Ohashi. GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform, IET Power Electronics, Vol. 11, No. 4, pp. 689-694, Apr. 2018.
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization, Journal of Electrical Materials, Springer US, Vol. 47, No. 7, pp. 3497, Mar. 2018.
• N. Hayakawa, Iriya Muneta, Takumi Ohashi, Kenntarou Matsuura, Junnichi Shimizu, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control, Japan Journal of Applied Physics, IOP Publishing, Vol. 57, 04FP13, Mar. 2018.  公式リンク  
  
• Kazuo Tsutsui, Tomohiro Matsushita, Kotaro Natori, Takayuki Muro, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography, Nano Letters, Vol. 17, pp. 7533-7538, Nov. 2017.
• Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, Chia Chieh Hsu, Jin Hwa Lee, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Edward Yi Chang. Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application, IEEE Electron Device Letters, Vol. 38, No. 8, pp. 1101-1104, Aug. 2017.
• "K. Kakushima", "T. Seki", "H. Wakabayashi", "K. Tsutsui", "H. Iwai". Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates, Vacuum, Vol. 149, pp. 14-18, June 2017.
• Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness, Applied Physics Express, IOP Publishing, Vol. 10, Mar. 2017.  公式リンク  
  
• "Jun’ichi Shimizu", "Takumi Ohashi", "Kentaro Matsuura", "Iriya Muneta", "Kuniyuki Kakushima", "Kazuo Tsutsui", "Hitoshi Wakabayashi". High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs, Japanese Journal of Applied Physics (JJAP), Vol. 56, No. 4S, 2017.
• "R. Miyazawa", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "K. Kakushima". Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells, International Journal of High Speed Electronics and Systems (IJHSES), Vol. 25, No. 1-2, Page 1640008(7pages), Sept. 2016.
• "M.S. Hadi", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "K. Kakushima". Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes, Microelectronics Reliability, Vol. 63, pp. 42-45, Aug. 2016.
• "J. Chen", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "K. Kakushima". Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current, Microelectronic Reliability, Vol. 63, pp. 52-55, Aug. 2016.
• "Tomoyuki Suzuki", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Hiroshi Iwai", "Kuniyuki Kakushima". Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics, IEEE Electron Device Letters (EDL), Vol. 37, No. 5, pp. 618-620, May 2016.
• Yusuke Takei, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors, Japanese Journal of Applied Physics, Vol. 55, No. 4, Apr. 2016.
• "J. Chen", "T. Kawanago", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "D. Nohata", "H. Nohira", "K. Kakushima". La2O3 gate dielectrics for AlGaN/GaN HEMT, Microelectronics Reliability, Vol. 60, pp. 16-19, 2016.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, H. Wakabayashi. Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs, Japan Journal of Applied Physics, Vol. 54, No. 4S, Mar. 2015.
• "Yusuke Takei", "Masayuki Kamiya", "Kazuo Tsutsui", "Wataru Saito", "Kuniyuki Kakushima", "Hitoshi Wakabayashi", "Yoshinori Kataoka", "Hiroshi Iwai". Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, Physica Status Solidi A, Vol. 212, No. 5, pp. 1104-1109, Feb. 2015.
• "Mokh Hadi", "Shinichi Kano", "Kuniyuki Kakushima", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer, Semiconductor Science and Technology, Vol. 29, No. 11, Oct. 2014.
• "Yusuke Takei", "Mari Okamoto", "Wataru Saito", "Kazuo Tsutsui", "Kuniyuki Kakushima", "Hitoshi Wakabayashi", "Yoshinori Kataoka", "Hiroshi Iwai". Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, ECS Transactions, Vol. 61, No. 4, pp. 265-270, May 2014.
• "Y. Wu", "H. Hasegawa", "K. Kakushima", "K. Ohmori", "T. Watanabe", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "Y. Kataoka", "K. Natori", "K. Yamada", "H. Iwai". A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability, Microelectronics Reliability, Vol. 54, No. 5, pp. 899-904, May 2014.
• "Chunmeng Dou", "Tomoya Shoji", "Kazuhiro Nakajima", "Kuniyuki Kakushima", "Parhat Ahmet", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, pp. 725-729, Apr. 2014.
• "T. Kawanago", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT, IEEE Transaction on Electron Devices(T-ED), Vol. 61, No. 3, pp. 785-791, Feb. 2014.
• "K. Tuokedaerhan", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain, Applied Physics Letters (APL), Vol. 104, No. 2, Jan. 2014.
• "K. Tuokedaerhan", "R. Tan, K. Kakushima", "P. Ahmet", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "T. Hattori", "H. Iwai". Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application, Applied Physics Letters (APL), Vol. 103, Sept. 2013.
• "Keita Takahashi", "Kazuo Tsutsui". Growth of Thin Epitaxial CaxSr1-xF2/SrF2 Layers with Low Leakage Current on Ge Substrates, Japanese Journal of Applied Physics (JJAP), Vol. 52, No. 10R, Sept. 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, Kenji Natori, HIROSHI IWAI. Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure, Solid-State Electronics, Vol. 84, pp. 53-57, June 2013.
• Y. Wu, 竇春萌, F. Wei, Kuniyuki KAKUSHIMA, 大毛利健治, パールハットアヘメト, T. Watanabe, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, 片岡好則, takeo hattori, HIROSHI IWAI. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability, Japanese Journal of Applied Physics, Vol. 52, No. 4S, pp. 04CC28-1-04CC28-5, Apr. 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Hiroshi Nohira, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, Solid-State Electronics, Vol. 82, pp. 29-33, Apr. 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs, Solid-State Electronics, Vol. 74, pp. 2-6, Aug. 2012.
• マイマイティ マイマイティレャアティ, 久保田透, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡好則, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors, Microelectronics Reliability, Vol. 52, No. 6, pp. 1039-1042, June 2012.
• C. Dou, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer, Microelectronics Reliability, Vol. 32, No. 4, pp. 688-691, Apr. 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, 片岡好則, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Valance number transition and silicate formation of cerrium oxide on Si(100), Vacuum, Vol. 86, No. 10, pp. 1513-1516, Apr. 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡 好則, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs, Semiconductor Science and Technology, Vol. 27, No. 4, Mar. 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2, IEEE ELECTRON DEVICE LETTERS, Vol. 33, No. 3, pp. 423-425, Mar. 2012.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature, IEEE Transactions on Electron Devices, Vol. 59, No. 2, pp. 269-276, Feb. 2012.
• Takamasa Kawanago, 鈴木 拓也, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process, Solid-State Electronics, Vol. 68, pp. .68-72, Feb. 2012.
• ダリューシュザデ, Takashi Kanda, 山下晃司, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PD03-1-4, Oct. 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA04-1-4, Oct. 2011.
• 来山大祐, 久保田透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. [ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA05-1-5, Oct. 2011.
• ダリューシュザデ, Kuniyuki KAKUSHIMA, Takashi Kanda, Y.C.Lin, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques, Microelectronic Engineering, Vol. 88, No. 7, pp. 1109-1112, July 2011.
• 来山大祐, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3, Microelectronic Engineering, Vol. 88, No. 7, pp. 1330-1333, July 2011.
• DARYOUSH ZADEH, Soshi Sato, Kuniyuki KAKUSHIMA, A. Srivastava, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, C.K. Sarkar, HIROSHI IWAI. Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise, Microelectronics Reliability, Vol. 51, pp. 746-750, Apr. 2011.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of rare earth silicates for highly scaled gate dielectrics, Microelectronic Engineering, Vol. 87, No. 10, pp. 1868-1871, Oct. 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, M.Adachi, Koichi Okamoto, Soshi Sato, Jaeyeol Song, Takamasa Kawanago, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Interface and electrical properties of La-silicate for direct contact of high-k with silicon, Solid-State Electronics, Vol. 54, pp. 715-719, June 2010.
• A. Uedono, KAZUO TSUTSUI, S. Ishibashi, H. Watanabe, S. Kubota, Yasumasa Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam, Japanese Journal of Applied Physics, 49, 051301, May 2010.
• A. Uedono, KAZUO TSUTSUI, S. Ishibashi, H. Watanabe, S. Kubota, Y. Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam, Japanese Journal of Applied Physics, Vol. 49, 051301, May 2010.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 25, No. 6, 065008, May 2010.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. SrO capping effect for La2O3/ Ce-Silicate gate dielectrics, Microelectronics Reliability 50, pp. 356-359, Mar. 2010.
• Yusuke Kobayashi, Kuniyuki KAKUSHIMA, Ahmet Parhat, V.Rampogal Rao, KAZUO TSUTSUI, HIROSHI IWAI. Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness, Microelectronics Reliability 50, pp. 332-337, Mar. 2010.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, Kiichi Tachi, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric, Solid-State Electronics, Vol. 54, pp. 720-723, 2010.
• Kuniyuki KAKUSHIMA, M. Nakagawa, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric, Semiconductor Science and Technology, Vol. 25, No. 4, 045029, 2010.
• Takao Oshita, Keita Takahashi, Kazuo Tsutsui. Growthofultra-thinfluorideheterostructuresonGe(111) for quantumdevices, Journal of Crystal Growth, vol. 311, pp. 2224-2226, Jan. 2009.
• Tomotsune Koyanagi, Kiichi Tachi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation, Japanese Journal of Applied Physics, Vol. 48, 2009.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, Jaeyeol Song, Soshi Sato, Hiroshi Nohira, E. Ikenaga, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film, JOURNAL OF APPLIED PHYSICS, [ 145] K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui, N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009, Vol. 106, 2009.
• KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, PARHAT AHMET, HIROSHI IWAI. Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2, Microelectronic Engineering, Vol. 85, pp. 315-319, Feb. 2008.
• Ahmet Parhat, Nakagawa Kentaro, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability 48, Vol. 48, pp. 1769–1771, 2008.
• Ahmet Parhat, 中川健太郎, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability, Vol. 48, pp. 1769–1771, 2008.
• KAZUO TSUTSUI, T Matsuda, M Watanabe, Cheng-Guo Jin, 佐々木雄一朗, Bunji Mizuno, E Ikenaga, Kuniyuki KAKUSHIMA, Ahmet Parhat, T Maruizumi, Hiroshi Nohira, takeo hattori, HIROSHI IWAI. Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements, Journal of Applied Physics, Vol. 104, 093709, 2008.
• KAZUO TSUTSUI, T. Shiozawa, K. Nagahiro, Y. Ohishi, Kuniyuki KAKUSHIMA, Ahmet Parhat, N. Urushihara, M. Suzuki, HIROSHI IWAI. Improvement of Thermal Stability of Ni Silicide on N+-Si by Direct Deposition of Group III Element (Al, B) Thin Film at Ni/Si Interface, Microelectronic Engineering, Vol. 85, pp. 2000-2004, 2008.
• KAZUO TSUTSUI, Ruifei Xiang, K. Nagahiro, T. Shiozawa, Ahmet Parhat, Y. Okuno, M. Matsumoto, M. Kubota, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2, Microelectronic Engineering, Vol. 85, pp. 315-319, 2008.
• Reyes Joel Molina, A. Torres, W. Calleja, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Degradation and breakdown of W-La2O3 stack after annealing in N-2, JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 47, pp. 7076-7080, 2008.
• N. Urushihara, S. Iida, N. Sanada, M. Suzuki, D.F. Paul, S. Bryan, Y. Nakajima, T. Hanajiri, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, HIROSHI IWAI. Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, Vol. 26, pp. 668-672, 2008.
• Kuniyuki KAKUSHIMA, K. Okamoto, M. Adachi, Kiichi Tachi, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion, SOLID-STATE ELECTRONICS, Vol. 52, pp. 1280-1284, 2008.
• Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V.Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai. Parasitic Effects in Multi-Gate MOSFETs, IEICE TRANS. ELECTRON, Vol. E90-C, No. 10, pp. 2051-2056, Oct. 2007.
• N. S. Sokolov, I. V. Grekhov, S. Ikeda, A. K. Kaveev, A.V. Krupin, K. Saiki, K. Tsutsui, S. E. Tyaginov, M. I. Vexler. Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111), Microelectronic Engineering, vol. 84, pp. 2247-2250, Jan. 2007.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Improvement of interfacial properties with interfacial layer in La2O3 / Ge structure, Microelectronic Engineering, Vol. 84, pp. 2336-2339, 2007.
• Takamasa Kawanago, Kiichi Tachi, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application, Microelectronic Engineering, Vol. 84, pp. 2335-2338, 2007.
• Soshi Sato, Kiichi Tachi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Thermal-stability improvement of LaON thin film formed using nitrogen radicals, Microelectronic Engineering, Vol. 84, pp. 1894-1897, 2007.
• Motoki Maeda, Natsuko Matsudo, So Watanabe, Kazuo Tsutsui. Crystalline structure of epitaxial Ca_xMg_1-xF₂ alloys on Si(100) and Si(111) substrates, Thin Solid Films, Vol. 515, pp. 448-451, 2006.
• Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Effective mobility and interface-state density of La₂O₃ nMISFETs after post deposition annealing, IEICE Electronics Express, Vol. 3, No. 13, pp. 316-321, 2006.
• So Watanabe, Tsuyoshi Sugisaki, Yohei Toriumi, Motoki Maeda, Kazuo Tsutsui. Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates, Jpnese Journal of Applied Physics, Vol. 45, No. 6A, pp. 4934-4938, 2006.
• So Watanabe, Motoki Maeda, Tsuyoshi Sugisaki, Kazuo Tsutsui. Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process, Japanese Journal of Applied Physics, Vol. 44, No. 4B, pp. 2637-2641, 2005.
• Motoki Maeda, Joji Omae, So Watanabe, Yohei Toriumi, Kazuo Tsutsui. Surface Modification of Si Substrates by CdF₂ Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures, Journal of Crystal Growth, Vol. 278, pp. 643-648, 2005.
• Yongshik Kim, Kunihiro Miyauchi, Shun-ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai. Electrical Properties of Vacuum Annealed La₂O₃ Thin Films grown by E-Beam Evaporation, Japanese Journal of Applied Physics, Vol. 36, pp. 41-49, 2005.
• Motoki Maeda, Natsuko Matsudo, So Watanabe, Kazuo Tsutsui. Growth characteristics of ultra-thin epitaxial Ca_xMg_1-xF₂ alloys on Si(111) substrates, Journal of Crystal Growth, Vol. 285, pp. 572-578, 2005.
• Kazuo Tsutsui, Ryota Higaki, Yuichiro Sasaki, Takahisa Sato, Hideki Tamura, Katsumi Okashita, Bunji Mizuno, Hiroshi Iwai. Doping Effects from Neutral B₂H₆ Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping, Japanese Journal of Applied Physics, Vol. 44, No. 6A, pp. 3903-3907, 2005.
• Y. Sasaki, C.G. Jin, K. Okashita, H. Tamura, H. Ito, B. Mizuno, H. Sauddin, R. Higaki, T. Satoh, K. Majima, Y. Fukagawa, K. Takagi, I. Aiba, S. Ohmi, K. Tsutsui, H. Iwai. New method of Plasma doping with in-situ Helium pre-amorphization, Nuclear Instruments and Methods in Physics Research B, Vol. 237, pp. 41-45, 2005.
• J. A. Ng, Y. Kuroki, N. Sugii, K. Kakushima, S.-I. Ohmi, K. Tsutsui, T. Hattori, H. Iwai, H. Wong. Effects of low temperature annealing on the ultrathin La₂O₃ gate dielectric; comparison of post deposition annealing and post metallization annealing, Microelectronic Engineering, Vol. 80, pp. 206-209, 2005.
• C.G. Jin, Y. Sasaki, K. Okashita, H. Tamura, H. Ito, B. Mizuno, K. Tsutsui, S. Ohmi, H. Iwai. Ultra shallow p⁺/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation, Nuclear Instruments and Methods in Physics Research B, Vol. 237, pp. 58-61, 2005.
• So Watanabe, Motoki Maeda, Tsuyoshi Sugisaki, Kazuo Tsutsui. Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process, Ext. Abs. of Solid Sate Devices and Materials (SSDM), pp. 606-607, 2004.
• Motoki MAEDA, Joji OMAE, So WATANABE, Yohei TORIUMI, Kazuo TSUTSUI. Surface Modification of Si Substrates by CdF₂ Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures, Abs. of MBE2004 (2004 Molecular Beam Epitaxy), pp. 107-108, 2004.
• Y. Kim, S. Ohmi, K. Tsutsui, H. Iwai. Electrical Conduction Processes in Lanthana Thin Films prepared by E-Beam Evaporation, 206th ECS symposium, Proc. Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing, Vol. 2004-04, pp. 452-453, 2004.
• K. Tsutsui, R. Higaki, Y. Sasaki, T. Sato, H. Tamura, B. Mizuno, H. Iwai. Contribution and control of neutral gas absorption effects in the plasma doping of boron into Si, Ext. Abs. of IWJT2004(International Workshop on Junction Technology), pp. 46-49, 2004.
• Kazuo Tsutsui, Yuichiro Sasaki, Cheng-Guo Jin, Hideki Tamura, Bunji Mizuno, Ryota Higaki, Tkahisa Sato, Kenta Majima, Shun-ichiro Ohmi, Hiroshi Iwai. Ultra Shallow p⁺/n Junctions Fabricated by Plasma Doping and All Solid State Laser Annealing, Electrochemical Society Proceedings Advanced Short-Time Thermal Processing for Si- Based CMOS Devices II, Vol. 2004-01, pp. 106-111, 2004.
• Kazuo Tsutsui, Ryota Higaki, Takahisa Sato, Yuichiro Sasaki, Hideki Tamura, Bunji Mizuno, Hiroshi Iwai. Effects of Substrate Surface Conditions on Dose Controllability of Plasma Doping Process (Invited), Proc. of The 7th Int. Conf. on Solid State and Integrated Circuit Technology (ICSICT2004), pp. 439-444, 2004.
• Bunji Mizuno, Yuichiro Sasaki, Cheun-Guo Jin, Hideki Tamura, Katsumi Okashita, Hiroyuki Ito, Kazuo Tsutsui, Hiroshi Iwai. Plasma Doping (Invited), Proc. of The 7th Int. Conf. on Solid State and Integrated Circuit Technology (ICSICT2004), pp. 423-427, 2004.
• Y. Sasaki, C. G. Jin, H. Tamura, B. Mizuno, R. Higaki, T. Satoh, K. Majima, H. Sauddin, K. Takagi, S. Ohmi, K. Tsutsui, H. Iwai . B₂H₆ Plasma Doping with In-situ He Pre-amorphization, Tech. Dig. of Symp. on VLSI Technology, 2004.
• 渡邉聡, 杉崎剛, 前田元輝, 筒井一生. 弗化物共鳴トンネルダイオードにおける酸化効果を用いたCaF₂バリア層の絶縁性向上, 第65回応用物理学会学術連合講演会予稿集, pp. 1240, 2004.
• 前田元輝, 松土夏子, 渡邉聡, 筒井一生. Ca_xMg_1-xF₂混晶薄膜のSi(111)基板上へのエピタキシャル成長, 第65回応用物理学会学術連合講演会予稿集, pp. 1240, 2004.
• 鳥海陽平, 齋藤格広, 渡邉聡, 前田元輝, 筒井一生. 弗化物3重障壁共鳴トンネルダイオードにおける混晶井戸の有効性, 第65回応用物理学会学術連合講演会予稿集, pp. 1223, 2004.
• Yongshik Kim, Shun-ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai. Space-Charge-Limited Current Conductions in La2O3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing, Proc. of 34^th^ Europian Solid-State Device Research Conference (ESSDERC2004), pp. 81-88, 2004.
• Takahisa Sato, Ryota Higaki, Hideki Tamura, Yuichiro Sasaki, Bunji Mizuno, Kazuo Tsutsui, Hiroshi Iwai. Effects of Wet Cleaning Treatment on Dose of Impurity after Plasma Doping, Proc. of 34^th^ Europian Solid-State Device Research Conference (ESSDERC2004, pp. 149-152, 2004.
• Shun-ichiro Ohmi, Hiroyuki Yamamoto, Junichi Taguchi, Kazuo Tsutsui, Hiroshi Iwai. Effects of post dielectric deposition and post metallization annealing processes on metal/Dy2O3/Si(100) diode characteristics, Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp. 1873-1878, 2004.
• 中川健太郎, 宮内邦裕, 筒井一生, 岩井洋. 高誘電率希土類酸化物の積層構造に関する研究, 第65回応用物理学会学術連合講演会予稿集, pp. 687, 2004.
• C.G.Jin, Y. Sasaki, K. Tsutsui, S. Ohmi, B. Mizuno, H. Iwai. Estimation of Ultra-Shallow Plasma Doping(PD) Layerﾕs Optical Absorption Properties by Spectroscopic Ellipsometry (SE), Ext. Abs. of IWJT2004 (International Workshop on Junction Technology) , pp. 102-103, 2004.
• 吉崎智史, 吉田丈治, 大見俊一郎, 筒井一生, 岩井洋. La₂O₃をゲート絶縁膜に用いたMISFETの低周波ノイズのアニール温度依存性, 第65回応用物理学会学術連合講演会予稿集, pp. 686, 2004.
• 福山享, 金容, 大見俊一郎, 筒井一生, 岩井洋. 高誘電率La₂O₃薄膜におけるリーク電流機構の解析, 第65回応用物理学会学術連合講演会予稿集, pp. 686, 2004.
• 黒木裕介, 黄仁安, 栗山篤, 大見俊一郎, 筒井一生, 岩井洋. La₂O₃をゲート絶縁膜に用いたMISFETにおけるポストメタライゼーションアニールの効果に関する検討, 第65回応用物理学会学術連合講演会予稿集, pp. 686, 2004.
• モリナ・レイエスホエル, 栗山篤, 筒井一生, 岩井洋. 希土類酸化物薄膜におけるポストメタルアニールに関する検討(2), 第65回応用物理学会学術連合講演会予稿集, pp. 685, 2004.
• 眞嶋健太, 深川洋太郎, 田村秀貴, 岡下勝己, 佐々木雄一朗, 水野文二, 筒井一生, 岩井洋. プラズマドーピング法で形成した極浅p⁺n接合のホール測定, 第65回応用物理学会学術連合講演会予稿集, pp. 741, 2004.
• 相庭一穂, 佐藤貴久, 佐々木雄一朗, 筒井一生, 水野文二, 岩井洋. プラズマドーピング後の基板洗浄によるドーズ変化, 第65回応用物理学会学術連合講演会予稿集, pp. 741, 2004.
• 高木克洋, 佐藤貴久, 田村秀貴, 岡下勝己, 筒井一生, 佐々木雄一朗, 水野文二, 岩井洋. プラズマドーピングにおけるHeプラズマ前処理の不純物プロファイルへの効果, 第65回応用物理学会学術連合講演会予稿集, pp. 741, 2004.
• 岡下勝己, 佐々木雄一朗, 金成国, 田村秀貴, 水野文二, 筒井一生, 岩井洋. 極浅接合形成のためのプラズマ照射プレアモルファス化, 第65回応用物理学会学術連合講演会予稿集, pp. 740, 2004.
• 大前譲治, 前田元輝, 筒井一生. CdF₂分子線により表面改質したSi(111)基板上への弗化物共鳴トンネルダイオードの製作, 第65回応用物理学会学術連合講演会予稿集, pp. 1231, 2004.
• 佐々木雄一朗, 水野文二, 赤間貞洋, 檜垣良太, 大見俊一郎, 筒井一生, 岡下勝己, 前嶋聡, 吉川住和, 中山一郎, 岩井洋. プラズマドーピング法におけるH等の深さ分布プロファイルの挙動とコンタミの検討, 第50回応用物理関係連合講演会予稿集, pp. 941, 2003.
• 長井利明, 田中敦之, 筒井一生, 川崎宏治, 青柳克信. 電子ビームと水素ラジカルの併用によるCaF2表面改質と金属ドットの選択堆積, 第50回応用物理関係連合講演会予稿集, pp. 783, 2003.
• 檜垣良太, 筒井一生, 佐々木雄一朗, 水野文二, 吉川住和, 大見俊一郎, 岩井洋. プラズマ前処理を用いたガスドーピングにおける基板表面状態の影響, 第64回応用物理学会学術連合講演会予稿集, pp. 771, 2003.
• 赤間貞洋, 檜垣良太, 筒井一生, 佐々木雄一朗, 水野文二, 吉川住和, 大見俊一郎, 岩井洋. 室温ガスドーピングの表面反応機構, 第50回応用物理関係連合講演会予稿集, pp. 941, 2003.
• 前田元輝, 渡邉聡, 筒井一生. Cd-richCa_xCd_1-xF₂混晶超薄膜のSi(111)基板上における成長安定化機構, 第50回応用物理関係連合講演会予稿集, pp. 1478, 2003.
• 檜垣良太, 赤間貞洋, 筒井一生, 佐々木雄一朗, 水野文二, 吉川住和, 大見俊一郎, 岩井洋. 室温ガスドーピング法におけるドーズ量の制御, 第50回応用物理関係連合講演会予稿集, pp. 940, 2003.
• 渡邉聡, 前田元輝, 筒井一生. 弗化物混晶系ヘテロ構造を用いたシリコン基板上への共鳴トンネルダイオード, 電子情報通信学会技術研究報告, Vol. ED2002/SDM2002, No. 300/263, 2003.
• 前田元輝, 渡邉聡, 筒井一生. Cd-rich Ca_xCd_1-xF₂混晶を量子井戸層に用いた共鳴トンネルダイオードの電気特性評価, 第64回応用物理学会学術連合講演会予稿集, pp. 1252, 2003.
• 佐藤貴久, 檜垣良太, 筒井一生, 佐々木雄一郎, 田村秀樹, 金成国, 水野文二, 大見俊一郎, 岩井洋. プラズマドーピング前後のHF洗浄とドーズ量の変化, 第64回応用物理学会学術連合講演会予稿集, pp. 722, 2003.
• Motoki Maeda, So Watanabe, Kazuo Tsutsui. Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes, Japanese Journal of Applied Physics, Vol. 42, No. 10A, pp. L1216-L1218, 2003.
• 渡邉聡, 前田元輝, 筒井一生. 弗化物共鳴トンネルダイオードの特性におけるバイアス履歴依存現象の解明, 第50回応用物理関係連合講演会予稿集, pp. 1468, 2003.
• Motoki Maeda, So Watanabe, Kazuo Tsutsui. Heteroepitaxy of Cd-rich Ca_xCd_1-xF₂ Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes, Japanese Journal of Applied Physics, Vol. 42, No. 4B, pp. 2453, 2003.
• Hiroshi Kambayashi, Takuji Gotoh, Hiroshi Maeda, Kazuo Tsutsui. Growth Characteristics of Ca_xCd_1-xF₂ Films on Si Substrates Using CaF₂ Buffer Layer, Journal of Crystal Growth, Vol. 273-279, pp. 2061-2064, Apr. 2002.
• 渡邉聡, 前田元輝, 筒井一生. 弗化物ヘテロ共鳴トンネルダイオードにおけるバリアハイト制御, 第63回応用物理学会学術講演会予稿集, pp. 1204, 2002.
• 前田元輝, 渡邉聡, 筒井一生. Cd-rich Ca_xCd_1-xF₂混晶超薄膜のSi(111)基板上へのエピタキシャル成長特性, 第63回応用物理学会学術講演会予稿集, pp. 1204, 2002.
• 檜垣良太, 赤間貞洋, 大見俊一郎, 筒井一生, 佐々木雄一朗, 水野文二, 岩井洋. プラズマドーピングとプラズマ前処理を用いたガスドーピング, 第63回応用物理学会学術講演会, pp. 769, 2002.
• 長井利明, 田中敦之, 筒井一生, 川崎宏治, 青柳克信. CaF₂薄膜の電子ビーム表面改質における水素ラジカル併用効果, 第63回応用物理学会学術講演会予稿集, pp. 643, 2002.
• 川崎宏治, 金井大, 平山秀樹, 筒井一生, 青柳克信. 選択成長法により形成した縦型GaN/AlN量子ドットを用いた単一電子素子の作製, 第49回応用物理学関係連合講演会予稿集, pp. 211, 2002.
• 金井大, 川崎宏治, 平山秀樹, 筒井一生, 青柳克信. GaN量子ドットを用いた単一電子トランジスタの高温動作, 第49回応用物理学関係連合講演会予稿集, pp. 212, 2002.
• 今福周作, 筒井一生. 希薄酸素雰囲気中での電子線照射によるCaF₂薄膜の表面改質, 第49回応用物理学関係連合講演会予稿集, pp. 733, 2002.
• 高屋浩二, 長井利明, 筒井一生, 川崎宏治, 青柳克信. 自己整合的手法による金属結合量子ドット構造の形成, 第49回応用物理学関係連合講演会予稿集, pp. 1386, 2002.
• 渡邉聡, 神林宏, 関根広志, 筒井一生. Si基板上の活性層埋め込み型弗化物共鳴トンネルダイオードの製作, 第49回応用物理学関係連合講演会予稿集, pp. 933, 2002.
• 前田元輝, 神林宏, 筒井一生. Cd-rich Ca_xCd_1-xF₂混晶のSi(111)基板上へのエピタキシャル成長, 第49回応用物理学関係連合講演会予稿集, pp. 1374, 2002.
• Koji Kawasaki, Ikuo Nakamura, Hideki Hirayama, Kauo Tsutsui, Yoshinobu Aoyagi. Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy, Journal of Crystal Growth, Vol. 243, pp. 129-133, 2002.
• 寺山俊明, 関根広志, 筒井一生. 弗化物共鳴トンネルダイオードとSi-MOSFETの混載集積, 電子情報通信学会技術研究報告, Vol. ED2001, pp. 249, 2002.
• Toshiaki Terayama, Hiroshi Sekine, Kazuo Tsutsui. Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs, Japanese Journal of Applied Physics, Vol. 41, No. 4B, pp. 2598, 2002.
• 神林宏, 前田寛, 筒井一生. Si基板上のエピタキシャルCaCdF₂混晶層の電気的特性, 第62回応用物理学会学術講演会予稿集, pp. 1052, 2001.
• Toshimitsu Kobori, Kazuo Tsutsui. Molecular-beam epitaxy of conductive CdF₂ films on Si substrates by simultaneous Cd exposure, Applied Physics Letters, Vol. 78, No. 10, pp. 1406, 2001.
• Koji Kawasaki, Daisuke Yamazaki, Atsuhiro Kinoshita, Hideki Hirayama, Kazuo Tsutsui, Yoshinobu Aoyagi. GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors, Applied Physics Letters, Vol. 79, No. 14, pp. 2243-2245, 2001.
• Koji Kawasaki, Daisuke Yamazaki, Atsuhiro Kinoshita, Hideki Hirayama, Kazuo Tsutsui, Yoshinobu Aoyagi. GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors, Applied Physics Letters, Vol. 79, No. 14, pp. 2243, 2001.
• 山田聡, 平林文人, 筒井一生. エピタキシャル弗化物上への位置制御された金属極微細構造の選択形成, 電子情報通信学会技術研究報告, No. ED2000-247, pp. 31, 2001.
• Kazuo Tsutsui, Toshiaki Terayama, Hiroshi Sekine . Fluoride-Si Resonant Tunneling Diodes Co-integrated with Si-MOSFETs, 電子情報通信学会技術研究報告, No. ED2001-91, pp. 137, 2001.
• Patrick Le Maitre, 寺山俊明, 筒井一生. Simulation of static memory operation usig co-integration of fluoride-based resonant tunneling diodes and Si-MOSFET, 第48回応用物理学関係連合講演会予稿集, pp. 524/976, 2001.
• 山田聡, 今福周作, 高屋浩二, 筒井一生, 川崎宏治, 青柳克信. 電子ビーム位置制御法におけるCaF₂再成長プロセスの検討, 第48回応用物理学関係連合講演会予稿集, pp. 1344, 2001.
• 平林文人, 高屋浩二, 今福周作, 筒井一生, 川崎宏治, 青柳克信. 電子ビーム位置制御法による金属微細構造の形成におけるGaとAlの比較, 第48回応用物理学関係連合講演会予稿集, pp. 1344, 2001.
• 今福周作, 筒井一生. 電子線照射によるCaF₂表面の改質効果を利用したGaの選択堆積, 第62回応用物理学会学術講演会予稿集, pp. 553, 2001.
• 関根広志, 寺山俊明, 筒井一生. CdF₂/CaF₂共鳴トンネルダイオードとSi-MOSFETの混載回路の製作, 第62回応用物理学会学術講演会予稿集, pp. 367/735, 2001.
• KAZUO TSUTSUI. High-density-speed optical near-field recording-reading with a pyramidal silicon probe on a contact slider, Optics Letters, Vol. 25, No. 17, pp. 1279, 2000.
• 筒井一生. 突起型シリコンプローブアレイによる超高密度・超高速近接場光記録・再生, 第47回応用物理学関係連合講演会予稿集, pp. 1047, 2000.
• 寺山俊明, 熊谷史裕, 筒井一生. 高濃度イオン注入層上CdF₂/CaF₂共鳴トンネルダイオードの作製, 第61回応用物理学会学術講演会予稿集, pp. 401 or 835, 2000.
• 筒井一生. 自然形成GaNドットを用いた単電子トランジスタの製作, 第61回応用物理学会学術講演会予稿集, pp. 311, 2000.
• 筒井一生. 電子ビーム位置制御液滴エピタキシー法によるGaNドットの近接配置, 第61回応用物理学会学術講演会予稿集, pp. 311, 2000.
• 平林文人, 山田聡, 望月麻理恵, 筒井一生, 川崎宏治, 青柳克信. 電子ビーム位置制御法によるAl細線およびドット構造の作製, 第61回応用物理学会学術講演会予稿集, pp. 1182, 2000.
• Takuji Gotoh, Hiroshi Kambayashi, Kazuo Tsutsui. Epitaxial Growth of CaxCd1-xF2 Mixed Crystal Films on Si Substrates, Jpn. J. Appl. Phys., Vol. 39, No. 5B, pp. L476, 2000.
• Takuji Gotoh, Hiroshi Kambayashi, Kazuo Tsutsui. Epitaxial Growth of Ca_xCd_1-xF₂ Mixed Crystal Films on Si Substrates, Jpn. J. Appl. Phys., Vol. 39, No. 5B, pp. L476, 2000.
• 神林宏, 寺山俊明, 筒井一生. Si基板上へのCaCdF₂混晶のエピタキシャル成長(2)　-CaF₂バッファ層の効果-, 第61回応用物理学会学術講演会予稿集, pp. 401 or 835, 2000.
• 筒井一生. 液滴エピタキシー法により自然形成されたGaN量子ドットの光学特性, 第47回応用物理学関係連合講演会予稿集, pp. 365, 2000.
• 筒井一生. 電子ビーム位置制御液滴エピタキシー法によるGaN量子ドットアレイの形成, 第47回応用物理学関係連合講演会予稿集, pp. 365, 2000.
• 山田聡, 望月麻理恵, 平林文人, 筒井一生. 電子ビーム位置制御法によるGaドットアレイの形成　-CaF₂再成長による清浄・高選択プロセス-, 第47回応用物理学関係連合講演会予稿集, pp. 481 or 1413, 2000.
• 熊谷史裕, 寺山俊明, 筒井一生. Si基板上へのCdF₂/CaF₂共鳴トンネル構造の成長における基板方位オフ角依存性, 第47回応用物理学関係連合講演会予稿集, pp. 603, 2000.
• 後藤卓司, 神林宏, 筒井一生. Si基板上へのCaCdF₂混晶層のエピタキシャル成長, 第47回応用物理学関係連合講演会予稿集, pp. 604, 2000.
• 望月麻理恵, 山田聡, 平林文人, 筒井一生. 電子ビーム位置制御法によるナノドットアレイ, 電子情報通信学会技術研究報告, Vol. ED99-314, pp. 59, 2000.
• 望月麻理恵, 日村敦義, 川崎宏治, 筒井一生. 電子ビーム位置制御法によるCaF2上への高密度Gaドットアレイの形成とその機構, 第60回応用物理学会学術講演会予稿集, pp. 40, 1999.
• M. B. Lee, N. Atoda, K. Tsutsui, M. Ohtsu. Nanometric aperture arrays fabricated by wet and dry etching of silicon for near-field optical storage application, J. Vac. Sci. and Technol. B, No. Nov./Dec., 1999.
• 筒井一生. 超高密度・超高速光記録用光近接場スライダーの製作, 第60回応用物理学会学術講演会予稿集, pp. 848, 1999.
• 筒井一生. 液滴エピタキシー法により形成されるGaNドットの集束電子ビームによる位置制御, 第60回応用物理学会学術講演会予稿集, pp. 283, 1999.
• 筒井一生. 液滴エピタキシー法によるGaN量子ドットの自然形成, 第60回応用物理学会学術講演会予稿集, pp. 283, 1999.
• M. Mochizuki, A. Himura, K. Kawasaki, K. Tsutsui. High density Ga droplet arrays on CaF2 surface site-controlled by electron-beam exposure, 第18回電子材料シンポジウム（EMS-18）レコード, 1999.
• 日村敦義, 望月麻理恵, 川崎宏治, 筒井一生. 電子ビーム位置制御法によるCaF2上へのGaナノドットアレイの高密度形成, 第46回応用物理学関係連合講演会予稿集, pp. 519, 1999.
• 松原智樹, 川崎宏治, 望月麻理恵, 筒井一生. CaF2のステップエッジ上に自然形成させた金属多重トンネル接合を用いた単電子デバイス, 第46回応用物理学関係連合講演会予稿集, pp. 215, 1999.
• 川崎宏治, 筒井一生. 二次元島形成法によりCaF2/Si(111)基板上に成長させたGaAsの表面モフォロジー, 第46回応用物理学関係連合講演会予稿集, pp. 359, 1999.
• K. Kawasaki, M. Mochizuki, K. Tsutsui. Single electron devices formed by self-ordering metal nano-doroplet arrays on epitaxial CaF₂ film, Jpn. J. Appl. Phys., Vol. 38, No. 1B, pp. 418, 1999.
• K. Kawasaki, K. Tsutsui. Effects of the two-step growth method for GaAs on CaF₂/Si(111) with the electron beam surface modification technique, Jpn. J. Appl. Phys., Vol. 38, No. 3A, pp. 1521, 1999.
• KAZUO TSUTSUI. Silicon planar-apertured probe array for high-density near-field optical storage, Applied Optics, Vol. 38, No. 16, pp. 3566, 1999.
• KAZUO TSUTSUI. Subwavelength-sized phase-change recording with a silicon planar apertured probe, Proc. of SPIE, Near-Field Optics: Physics, Devices, and Information Processing, Vol. 3791, pp. 76, 1999.
• K. Tsutsui, K. Kawasaki, M. Mochizuki, T. Matsubara. Site controlled metal and semiconductor quantum dots on epitaxial fluoride films, Microelectronic Engineering, Vol. 47, pp. 135, 1999.
• M. M. Sarinanto, Y. Yamaguchi, K. Tsutsui. Study of thin ZnSe buffer layer for growth of GaAs on CaF₂/Si(111) heterosutructure, Thin Solid Films, Vol. 334, pp. 15, 1998.
• KAZUO TSUTSUI. Enhancing throughput over 100 times by a triple-tapered structure for nea-field optical fiber probe, Proc. of SPIE; Far- and Near-Field Optics: Physics and Information Processing, Vol. 3467, pp. 89, 1998.
• KAZUO TSUTSUI. Near field optics and its application to optical memory, Electronics and Communications in Japan, Part2, Vol. 81, No. 8, pp. 41, 1998.
• KAZUO TSUTSUI. Multitunneling junction of metal droplets formed on CaF┣D22┫D2 step edges in a self-assembling manner, Japanese Journal of Applied Physics, Vol. 37, No. 3B, pp. 1508, 1998.
• M. M. Sarinanto, K. Tsutsui. Epitaxial growth of SrF₂ on ZnSe(100) epitaxial films, Jpn. J. Appl. Phys., Vol. 37, No. 1A, pp. 253, 1998.
• A. Izumi, K. Tsutsui, N. S. Sokolov. Heteroepitaxial growth of CdF₂ layers on CaF₂/Si(111) by molecular beam epitaxy, Jpn. J. Appl. Phys., Vol. 37, No. 1A, pp. 295, 1998.
• 筒井一生. 近接場光学とその光メモリへの応用, 電子情報通信学会論文誌, Vol. J81-C-II, No. 3, pp. 326, 1998.
• K. Kawasaki, K. Tsutsui. Surface free energy modification of CaF₂ by atomic-height island formation on heteroepitaxy of GaAs on CaF₂, Applied Surface Science, Vol. 130-132, pp. 464, 1998.
• KAZUO TSUTSUI. ZnSe ionicity control layer inserted in GaAs/CaF┣D22┫D2(111)interface, Applied Surface Science, Vol. 117, No. 118, pp. 438, 1997.
• KAZUO TSUTSUI. Artificial control of dot sites for Ga droplet arrays on CaF┣D22┫D2 films by surface steps and electron beam modifications, Japanese Journal of Applied Physics, Vol. 36, No. 6B, pp. 4088, 1997.
• A. Izumi, N. Matsubara, Y. Kushida, K. Tsutsui. CdF┣D22┫D2/CaF┣D22┫D2 resonant tunneling diode fabricated on Si(111), Japanese Journal of Applied Physics, Vol. 36, No. 3B, pp. 1849, 1997.
• KAZUO TSUTSUI. Fabrication of site-controlled metal dot array by electron beam surface modification, Microelectronic Engineering, Vol. 35, pp. 245, 1997.
• A. Izumi, N. Matsubara, Y. Kushida, K. Tsutsui. CdF₂/CaF₂ resonant tunneling diode fabricated on Si(111), Jpn. J. Appl. Phys., Vol. 36, No. 3B, pp. 1849, 1997.
• KAZUO TSUTSUI. Effects of electron beam exposure conditions on the surface modification of CaF┣D22┫D2(111) for heteroepitaxy of GaAs/CaF┣D22┫D2 structure, Japanese Journal of Applied Physics, Vol. 35, No. 3, pp. 1701, 1996.
• A. Izumi, T. Hirai, K. Tsutsui, N.S. Sokolov. Study of band offsets in CdF₂/CaF₂/Si(111) heterostructure using X-ray photoelectron spectroscopy, Appl. Phys. Lett., Vol. 67, No. 19, pp. 2792, 1995.
• KAZUO TSUTSUI. Study of band offsets in CdF┣D22┫D2/CaF┣D22┫D2/Si(111)heterostructure using X-ray photoelectron spectroscopy, Applied Physics Letters, Vol. 67, No. 19, pp. 2792, 1995.
• KAZUO TSUTSUI. High quality CdF┣D22┫D2 layer growth on CaF┣D22┫D2/Si(111), Journal of Crystal Growth, Vol. 150, pp. 1115, 1995.
• KAZUO TSUTSUI. Study of Epitaxial Growth of Rotational-Twin-Free CaF┣D22┫D2 Films on Si(111), Japanese Journal of Applied Physics, Vol. 33, No. 2, pp. 1121, 1994.
• KAZUO TSUTSUI. Controlling the Profile of Nanostructure, Journal of Vaccum Science and Technology, Vol. B11, No. 6, pp. 2233, 1993.

著書

• 筒井一生. よくわかる電子デバイス, オーム社, オーム社, 1999.
• 筒井一生. 表面科学シリーズ4 表面・界面の電子状態, 丸善, 丸善, 1987.

国際会議発表 (査読有り)

• Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs, International Conference on Solid State Devices and Materials, Sept. 2023.
• Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure, Intermag 2023, May 2023.
• Ryo Ono, Shinya Imai, Takamasa Kawanago, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Shonosuke Kimura, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma, the International Workshop on Nitride Semiconductors 2022, Oct. 2022.
• Kazuto Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films, International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• R. Shibukawa, S. -L. Tsai, T. Hoshii, H. Wakbayashi, K. Tsutsui, K. Kakushima. Thermal stability of ferroelectric AlScN films, International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Sho Sasaki, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Observation of ferroelectricity in atomic layer deposited AlN film, International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Mitsuki Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer, International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation, International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi. Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region, International Conference on Solid State Devices and Materials, Sept. 2021.
• Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs, International Conference on Solid State Devices and Materials, Sept. 2021.
• Takuya Hamada, Taiga Horiguchi, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering, Internatonal Conference on Solid State Devices and Materials, Sept. 2021.
• Masaya Hamada, Takuya Hamada, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node, International Workshop on Junction Technology (IWJT2021), June 2021.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices, IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), pp. 217-219, Apr. 2021.
• Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Katsumi Satoh, Tomoko Matsudai, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology, International Electron Devices Meeting (IEDM) 2020, Dec. 2020.
• S. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Sunglin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Shigetaka Tomiya, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Takuya Hoshii, Hiromasa Okita, Taihei Matsuhashi, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, Akira Nakajima, Kuniyuki Kakushima, Hitoshi Wakabayashi, Jen-Inn Chyi, Kazuo Tsutsui. Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE, The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Nov. 2019.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. 3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Nov. 2019.
• H. Tanigawa, K. Matsuura, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• Jinhan Song, A. Ohta, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• Y. W. Lin, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka, T. Yokoya. Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites, T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya, Nov. 2019.
• T. Hiramoto, T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash. Switching of 3300V Scaled IGBT by 5V Gate Drive, ASICON (International Conference on ASIC), Oct. 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, S. Nshizawa, I. Omura, T. Hiramoto. Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs, Int. Conf. on Solide State Devices and Materials (SSDM2019), Sept. 2019.
• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET, Int. Conf. on Solide State Devices and Materials (SSDM2019), Sept. 2019.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing, Solid State Devices and Materials (SSDM2019), Sept. 2019.
• Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces, 13tu Int. Conf. on Nitride Semiconductor (ICNS), July 2019.
• K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi. Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration, Int. Workshop on Juction Technology (IWJT2019), June 2019.
• Iriya Muneta, Naoki Hayakawa, Takanori Shirokura, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetic tunnel devices with two-dimensional layered material MoS2, Collaborative Conference on Materials Research (CCMR) 2019, June 2019.
• Tomohiro Matsushita, Takayuki Muro, Kazuo Tsutsui, Takayoshi Yokoya. Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification, Int. Workshop on Juction Technology (IWJT2019), June 2019.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramo. 3300V Scaled IGBTs Driven by 5V Gate Voltag, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, K. Takeuchi, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, T. Hiramoto. Turn-Off Loss Improvement by IGBT Scaling, Int. Conf. on Solide State Devices and Materials (SSDM2019), May 2019.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.
• Takeya Inoue, Takuya Hoshii, Takuo Kikuchi, Hidehiko Yabuhara, Kazuyuki Ito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Junichi Tonotani, Kazuo Tsutsui. Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto. Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss, International Electron Devices Meeting (IEDM2018), Dec. 2018.
• K. Sasaki, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Minority Carrier Lifetime Measurement for SiC Epitaxial Layer, The 5th Meeting on Advanced Power Semiconductors, Nov. 2018.
• M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• T. Sakamoto, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, Y. Suzuki, N. Ikarashi, H. Wakabayashi. Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• Toyohiko Kinoshita, Tomohiro Matsushita, Takayuki Muro, Takuo Ohkochi, Hitoshi Osawa, Kouichi Hayashi, Fumihiko Matsui, Kazuo Tsutsui, Kotaro Natori, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Aya Taked, Kensei Terashim, Wataru Hosoda, Tetsuji Fukura, Yuukou Yano, Hirohkazu Fujiwara, Masanori Sunagawa, Hiromitsu Kato, Tamio Oguchi, Takanori Wakita, Yuuji Muraoka, Takayoshi Yokoya. Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites, 14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14), Oct. 2018.
• Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigyo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Sinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately, 44th European Solid-State Circuits Conference (ESSDERC2018), Sept. 2018.
• Kazuya Hisatsune, Yoshihisa Takaku, Kohei Sasa, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors, Int. Conf. on Sold State Devices and Materials (SSDM2018), Sept. 2018.
• I. Muneta, Danial B. Z., N. Hayakawa, K. Kakushima, K. Tsutsui, H. Wakabayashi. Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate, International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS), Aug. 2018.
• K. Kakushima, T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai. New methodology for evaluating minority carrier lifetime for process assessment, Symp. On VLSI Technology (VLSI2018), June 2018.
• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout, The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018), Mar. 2018.
• Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, HIROSHI IWAI, K. Kakushima. Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure, China Semiconductor Technology International Conference (CSTIC2018), Mar. 2018.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, pp. 104-106, Mar. 2018.
• Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui. Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography, 11th Int. Symp. on Atomic Level Characterization (ALC'17), Dec. 2017.
• Suguru Tatsunokuchi, Iriya Muneta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Photovoltaic Properties of Lateral Si Nano Wall Solar Cells, 2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017), Nov. 2017.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing, Advanced Metallization Conference 2017: 27th Asian Session, Oct. 2017.  公式リンク  
  
• N. Hayakawa, I. Muneta, T. Ohashi, K. Matsuura, J. Shimizu, K. Kakushima, K. Tsutsui, H. Wakabayashi. Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure, International Conference on Solid State Devices and Materials, Sept. 2017.
• Takuya Hoshii, Rumi Takayama, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate, International Conference on Solid-State Devices and Materials (SSDM2017), Sept. 2017.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi. Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET, IEEE Electron Device Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 222-223, June 2017.  公式リンク  
  
• S. Hirano, J. Shimizu, K. Matsuura, T. Ohashi, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 234-235, June 2017.  公式リンク  
  
• 岡田 泰典, 山口 晋平, 大橋 匠, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas, International Workshop on Junction Technology, June 2017.
• K. Kakushima, Yuta Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa. Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• K. Kakushima, T. Suzuki, T. Hoshii, I. Muneta, H. Wakabayashi, HIROSHI IWAI, Y. Aoki,H. Nohira Aoki, KAZUO TSUTSUI. Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• Y. M. Lei, T. Kaneko, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, M. Furuhashi, S. Tomohisa, S. Yamakawa. Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• Y. Ikeuchi, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, S.Ishikawa. Characteristics of Fe/pGaN Contact upon Annealing Process, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT, 62th International Electron Devices Meeting (IEDM2016), p. 268, Dec. 2016.
• Tomoyuki Suzuki, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Hiroshi Nohira, Kuniyuki Kakushima. Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC, International Conference on Solid State Devices and Materials, Sept. 2016.
• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Sin-ichi Nishizawa, Hiromichi Ohashi. Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs, 13th International Seminar on Power Semiconductors (ISPS), Aug. 2016.
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film, Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC), 2016.
• K. Tsutsui. Introduction of uneven structures under ohmic contacts to reduce contact resistances on AlGaN/GaN HEMTs, IEEE TENCON2015, Nov. 2015.
• A. Nakajima, S. Kubota, R. Kayanuma, K. Tsutsui, K. Kakushima, H. Wakabayashi, H. Iwai, S. Nishizawa, H. Ohashi. An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform, 2015 IEEE Compound Semiconductor IC Symposium (CSICS2015), Oct. 2015.
• Akira Nakajima, Shin-Ichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform, The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015), May 2015.
• M. Okamoto, K. Kakushima, Y. Kataoka, K. Natori, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure, WiPDA, Oct. 2014.
• T. Shoji, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells, 29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014), Sept. 2014.
• Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai. Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, The International Workshop on Nitride Semiconductors (IWN2014), Aug. 2014.
• Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai. Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, 225th ECS Meeting, May 2014.
• T. Takahashi, T. Tamura, K. Tsutsui. Fabrication of fluoride heterostructures on Si: High temperature growth with CoSi2 buffer layer controlling undesirable chemical reactions, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• T. Ohashi, H. Wakabayashi, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Akira Nakajima, Sin-ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors, The 26th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2014), 2014.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, Hitoshi Wakabayashi. Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs, International Conference on Solid State Devices and Materials, Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, 1074, 2014.
• DARYOUSH ZADEH, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction, IEDM 2013, 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes, China Semiconductor Technology International Conference (CSTIC) 2014, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode, 224th ECS Meeting in San Francisco, Oct. 2013.
• T. Seki, T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Electrical and Infrared Absorption Studies on La-silicate/Si Interface, IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013), Feb. 2013.
• K. Tsutsui. Analyses of Electrical Activation and Deactivation of Impurities Doped in Scaled-down Si Device Structures by X-ray Photoelectron Spectroscopy, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology 37 (WIMNACT-37), Feb. 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT, ESSDERC 2013, 2013.
• ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, 2013.
• T. Kamale, R. Tan, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, PRiME 2012, Oct. 2012.
• Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, S. Yamasaki, H. Iwai. TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal, PRiME 2012, Oct. 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai. Influence of Electrode Material for CaOx Based Resistive Switching, China Semiconductor Technology International Conference (CSTIC), Mar. 2012.
• T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. (100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture, 42nd European Solid-State Device Research Conference (ESSDERC 2012), 2012.
• Keita Takahashi, Yuji Hayashi, Ryosuke Kayanuma, Kazuo Tsutsui. Leakage Current Control of Fluoride Ultra-thin Films Grown on Ge Substrates, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• K. Kakushima, J. Kanehara, Y. Izumi, T. Muro, T. Kinoshita, P. Ahmet, K. Tsutsui, T. Hattori, H. Iwai. Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Y. Y. Illarionov, M. I. Vexler, S. M. Suturin, V. V. Fedorov, N. S. Sokolov, K. Tsutsui, K. Takahashi. Electron Tunneling in MIS Capacitors with MBE Grown Fluoride Layers on Si(111) and Ge(111): Role of Transvers Momentum Conservation, 17th Conference on Insulating Films on Semiconductors (INFOS-2011), June 2011.
• Ahmet Parhat, 来山大祐, 金田翼, 鈴木 拓也, Tomotsune Koyanagi, Miyuki Kouda, マイマイティ マイマイティレャアティ, Takamasa Kawanago, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm, CSTIC2011, 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• KAZUO TSUTSUI, Masaoki Tanaka, Norifumi Hoshino, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, T. Muro, T. Kinoshita, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• unknown unknown, Kuniyuki KAKUSHIMA, Ahmet Parhat, M. Geni, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• D. Kitayama, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai. TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT, 218th ECS Meeting, Oct. 2010.
• Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3 Gated MOS Device, ECS 218th Meeting, Oct. 2010.
• Y. Wu, Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, 西山彰, KENJI NATORI, takeo hattori, HIROSHI IWAI. Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface, ECS 218th Meeting, Oct. 2010.
• 来山大祐, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT, ECS 218th Meeting, Oct. 2010.
• Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation, tECS 218th Meeting, Oct. 2010.
• M. Mamatrishat, Miyuki Kouda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, A. Aierken, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, HIROSHI IWAI. Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics, ECS 218th Meeting, Oct. 2010.
• M.Bera, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Nobuyuki Sugii, 西山彰, takeo hattori, HIROSHI IWAI. Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge, ECS 218th Meeting, Oct. 2010.
• Keita Takahashi, Yuki Yoshizumi, Yuji Fukuoka, Noboru Saito, Kazuo Tsutsui. Epitaxial NiSi2 Buffer Technique for Fluoride Resonant Tunneling Devices on Si, 2010 Int. Conf. on Solid State Devices and Materials (SSDM2010), Sept. 2010.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks, ESSDERC 2010, 40th European Solid-State Device Research Conference, Sept. 2010.
• Keita Takahashi, Takao Oshita, Kazuo Tsutsui. Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111) and Its Application to Resonant Tunneling Diodes, 52nd Electronic Materials Conference (EMC2010), June 2010.
• Ahmet Parhat, Wataru Hosoda, unknown unknown, Yoshihisa Ohishi, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, HIROSHI IWAI. Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• Akira Uedono, KAZUO TSUTSUI, Shoji Ishibashi, Hiromichi Watanabe, Shoji Kubota, Kazuki Tenjinbayashi, Yasumasa Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Type Defects in Ultra-Shallow Junctions Fabricated Using Plasma Doping Studied by Positron Annihilation, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• KAZUO TSUTSUI, Norifumi Hoshino, Yasumasa Nakagawa, Masaoki Tanaka, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• A. Uedono, KAZUO TSUTSUI, S. Ishibashi, H. Watanabe, S. Kubota, Y. Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam, Japanese Journal of Applied Physics 49, 051301, May 2010.
• Wataru Hosoda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer, China Semiconductor Technology International Conference, pp. 1105-1110, Mar. 2010.
• AbudukelimuAbudureheman, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, HIROSHI IWAI, takeo hattori, KENJI NATORI. Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters, China Semiconductor Technology International Conference, pp. 1111-1116, Mar. 2010.
• Katuya Matano, Kiyohisa Funamizu, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric, China Semiconductor Technology International Conference, [, pp. 1129-1134, Mar. 2010.
• Hiroto Nakayama, Kuniyuki KAKUSHIMA, Ahmet Parhat, E.Ikenaga, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors, ECS 216th Meeting, vol. 25, No. 6, pp. 339-345, Oct. 2009.
• Kiyohisa Funamizu, Y.C. Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, E.Y. Chang, takeo hattori, HIROSHI IWAI. Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure, ECS 216th Meeting, vol. 25, No. 6, pp. 265-270, Oct. 2009.
• M.K.Bera, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge, ECS 216th Meeting, vol. 25, No. 6, pp. 67-77, Oct. 2009.
• Tomotsune Koyanagi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, AKIRA NISHIYAMA, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device, ECS 216th Meeting, vol. 25, No. 6, pp. 17-22, Oct. 2009.
• Hideaki Arai, Hideyuki Kamimura, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Reaction for Ni Silicidation of Si Nanowire, ECS 216th Meeting, vol. 25, No. 7, pp. 447-454, Oct. 2009.
• M.Mamatrishat, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks, ECS 216th Meeting, vol. 25, No. 7, pp. 253-257, Sept. 2009.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Kiichi Tachi, Miyuki Kouda, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm, ESSDERC 2009, 39th European Solid-State Device Research Conference, p. 403, Sept. 2009.
• Takahiro Nagata, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 知京豊裕, HIROSHI IWAI. On the thermal stability of nicket silicides, Future Trends in Microelectronics(FTM-2009) Workshop, June 2009.
• Takamasa Kawanago, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1629-1631, June 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Post metallization annealing study in La2O3/Ge MOS structure, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1638-1641, June 2009.
• Hideyuki Kamimura, Hideaki Arai, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact, ISTC /CSTIC2009, ISTC /CSTIC2009, pp. 58, Mar. 2009.
• Hiroki Fujisawa, A Srivastava, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, C.K. Sarkar, HIROSHI IWAI. Electrical Characterization of W/HfO2 MOSFETs with La2O3 Incorporation, ISTC /CSTIC2009, ISTC /CSTIC2009, pp. 53, Mar. 2009.
• H. Nakayama, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation, 216th ECS Meeting, 2009.
• M. Kouda, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• Y. Kobayashi, A. B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V. R. Rao, H. Iwai. Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. 0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• H. Nohira, Y. Takenaga, K. Kakushima, P. Ahmet, K. Tsutsui, H. Iwai. Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Okamoto, K. Tachi, S. Sato, J. Song, T. Kawanago, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• M. Hino, K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori, H. Iwai. Study on Stress Memorization by Argon Implantation and Annealing, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• B. Mizuno, Y. Sasaki, C. G. Jin, K. Okashita, K. Nakamoto, T. Kitaoka, K. Tsutsui, H. A. Sauddin, H. Iwai. Production-worthy approach of Plasma Doping (PD), The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Oct. 2008.
• Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai. Ni silicidation on Heavily Doped Si Substrates, The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Oct. 2008.
• K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• K. Tsutsui, M. Watanabe, Y. Nakagawa, T. Matsuda, Y. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira, T. Maruizumi, A. Ogura, T. Hattori, H. Iwai. New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• Y. Kobayashi, K. Tsutsui, K. Kakushima, P. Ahmet, V. R. Rao, H. Iwai. Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects, Int. Conf. on Solid State Devices and Materials (SSDM2008), Sept. 2008.
• Takao Oshita, Kazuo Tsutsui, Noboru Ishihara, Kazuya Masu. Scaling Trend of Analog Integrated Circuit with Process Variations on Future Ultra Deep Submicron CMOS Technology, International Conference on Solid State Devices and Materials (SSDM), International Conference on Solid State Devices and Materials (SSDM), D-2-2, pp. 83-84, Sept. 2008.
• K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Impact of Thin La2O3 Insertion for HfO2 MOSFET, 213th ECS Meeting, May 2008.
• Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai.. Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique, The 8th International Workshop on Junction Technology (IWJT2008), May 2008.
• K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, H. Iwai. Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si, 213th ECS Meeting, May 2008.
• Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers, 7th Int. Semiconductor Technology Conference (ECS-ISTC2008), May 2008.
• K. Tsutsui, T. Oshita, S. Watanabe, M. Maeda. Growth of Fluoride Quantum Well Heterostructures for Resonant Tunneling Devices on Si Substrates, ECS Transaction, vol. 13, no. 2, pp. 253-262, Jan. 2008.
• Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007), Nov. 2007.
• K.Tachi, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer, ECS Transactions, The Electrochmical Society, Vol. 11, No. 4, pp. 191-198, Oct. 2007.
• M.Adachi, K.Okamoto, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors, ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5, The Electrochemikal Society, Vol. 11, No. 4, pp. 157-167, Oct. 2007.
• K.Tsutsui, K.Nagahiro, T.Shiozawa, P.Ahmet, K.Kakushima, H.Iwai. Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes, ECS Transactions:ULSI Process Integration 5, The Electrochemical Society, Vol. 11, No. 6, pp. 207-213, Oct. 2007.
• [320] Koichi Okamoto, Manabu Adachi, Kuniyuki Kakushima, Parhat Ahmet, Nobuyuki Sugii, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation, ESSDERC 2007, Sept. 2007.
• Takashi Shiozawa, Koji Nagahiro, Kazuo Tsutsui, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai. Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition, ECS-ISTC2007, May 2007.
• Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai. Parasitic Effects Depending on Shape of Spacer Region on FinFETs, 211th ECS Meeting, May 2007.
• K. Tachi, H. Iwai, T. Hattori, N. Sugii, K. Tsutsui, P. Ahemt, K. Kakushima. Effect of Oxygen for Ultra-Thin La2O3 Film Deposition, 2006 Joint International Meeting of ECS, Oct. 2006.
• J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, I. Hiroshi. Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2, 2006 Joint International Meeting of ECS, Oct. 2006.
• Y. Shiino, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing, 2006 Joint International Meeting of ECS, Oct. 2006.
• H. Sauddin, Y. Sasaki, H. Ito, B. Mizuno, P. Ahmet, K. Kakushima, N. Sugii, K. Tsutsui, H. Iwai. Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping, 2006 Joint International Meeting of ECS, Oct. 2006.
• H. Nohira, T. Matsuda, K. Tachi, Y. Shiino, J. Song, Y. Kuroki, J. Ng, P. Ahmet, K. Kakushima, K. Tsutsui, E. Ikenaga, K. Kobayashi, H. Iwai, T. Hattori. Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer, 2006 Joint International Meeting of ECS, Oct. 2006.
• Y. Sasaki, H. Ito, K. Okashita, H. Tamura, C. G. Jin, B. Mizuno, T. Okumura, I. Aiba, Y. Fukagawa, H. Sauddin, K. Tsutsui, H. Iwai. Production-worthy USJ formation by self-regulatory plasma doping method, IIT2006, 2006.
• Youichi Kobayashi, Ruifei Xiang, Kazuo Tsutsui, Hiroshi Iwai. Formation of heat resistant Ni silicide by additional Hf layers, Materials for Advanced Metallization (MAM2005), Mar. 2005.
• Y. Kim, A. Kuriyama, I. Ueda, S. Ohmi, K. Tsutsui, H. Iwai. Electrical Characteristics of High-k La2O3 Thin Film Deposited by E-Beam Evaporation Method, 204th ECS symposium, Oct. 2003.
• Yongshik Kim, Atsushi Kuriyama, Isao Ueda, Shun-ichiro OHMI, Kazuo Tsutsui, HIROSHI IWAI. Analysis of Electrical Characteristics of La2O3 Thin Film Annealed in Vacuum and Others, 33rd European Solid-State Device Research Conference (ESSDERC2003), pp. 569-572, Sept. 2003.
• Ryota Higaki, Kazuo Tsutsui, Yuichiro Sasaki, Sadahiro Akama, Bunji Mizuno, Shun-ichiro OHMI, HIROSHI IWAI. Effect of gas phase absorption into Si substrates on plasma doping process, 33rd European Solid-State Device Research Conference (ESSDERC2003), pp. 231-234, Sept. 2003.
• Motoki Maeda, So Watanabe, Kazuo Tsutsui. Resonant Tunneling Devices on Si(111) Substrates Using Fluoride Alloy Heterostructures, 33rd European Solid-State Device Research Conference (ESSDERC2003), pp. 179-182, 2003.
• Y. Sasaki, B. Mizuno, S. Akama, R. Higaki, K. Tsutsui, S. Ohmi, H. Iwai. Helicon Wave Plasma Doping System, 3rd International Workshop on Junction Technology (IWJT2002), Dec. 2002.
• Y. Sasaki, B. Mizuno, S. Akama, R. Higaki, K. Tsutsui, S. Ohmi, H. Iwai. Gas Phase Doping at Room Temperature, 3rd International Workshop on Junction Technology (IWJT2002), Dec. 2002.
• Ikmi Kashiwagi, Chizuru Ohshima, Yongshik Kim, Shun-ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai. Dependence of Gd2O3 Thin Film Properties on Si Substrate Orienteation, IEEE Workshop on Microelectronics and Electron Devices (uE-ED2002), Oct. 2002.
• Motoki Maeda, Hiroshi Kambayashi, So Watanabe, Kazuo Tsutsui. Fluoride Resonant Tunneling Diodes Using Cd-rich CaxCd1-xF2/CaF2 Heterostructures on Si Substrates, 2002 Int. Conf. on Solid State Devices and Materials (SSDM2002), Sept. 2002.
• Kazuo Tsutsui, Hiroshi Sekine, Motoki Maeda, So Watanabe. Fluoride Resonant Tunneling Diodes for Co-integration with Si Devices, IEEE 2002 Silicon Nanoelectronics Workshop, June 2002.
• Kazuo Tsutsui, Toshiaki Terayama, Hiroshi Sekine, Hiroshi Kambayashi. Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs, 2001 Int. Nat. Conf. on Solid State Devices and Materials (SSDM2001), pp. 586, Sept. 2001.
• Kazuo Tsutsui, Toshiaki Terayama, Hiroshi Sekine, Patrick Le Maitre, Hiroshi Kambayashi. Fluoride-Si Resonant Tunneling Diodes Co-integrated with Si- MOSFETs, 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), July 2001.
• Hiroshi Kambayashi, Takuji Gotoh, Hiroshi Maeda, Kazuo Tsutsui. Growth Characteristics of CaxCd1-xF2 Films on Si Substrates Using CaF2 Buffer Layer, 13th Int. Conf. on Crystal Growth/11th Int. Conf. on Vapor Growth & Epitaxy(ICCG-13/ICVGE-11), July 2001.
• Kazuo Tsutsui, Hiroshi Kambayashi, Hiroshi Maeda. Growth of CaxCd1-xF2 alloy on Si substrates using very thin CaF2 buffer layer, 43rd 2001 Electronic Materials Conference, June 2001.
• K. Tsutsui, A. Himura, M. Mochizuki, K. Kawasaki. High density metal dot array formed by electron beam induced nucleation method, 1999 Int. Microprocesses and Nanotechnology Conferenc, July 1999.
• K. Tsutsui, K. Kawasaki, M. Mochizuki, T. Matsubara. Site controlled metal and semiconductor quantum dots on epitaxial fluoride films, 4th Int. Symp. on New Phenomena in Mesoscopic Structures, Hawaii, Dec. 1998.
• Koji Kawasaki, M. Mochizuki, Kazuo Tsutsui. Single electron transistors formed by self-ordering metal nanodroplet arrays on epitaxial CaF2 film, 2nd Int. Symp. on Formation, Physics and Device Application of Quantum dot Structures (QDS-98), May 1998.
• Koji Kawasaki, Kazuo Tsutsui. Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2, The 4th Int. Symp. on Atomically Controlled Surfaces and Interfaces (ACSI-4), Oct. 1997.
• Koji Kawasaki, Jun Takeshita, Kazuo Tsutsui. Multi-tunneling junctions of metal droplets formed on CaF2 step edges by self-assembling manner, 1997 Int. Conf. on Solid State Devices and Materials (SSDM), Sept. 1997.
• Mohanmad Musutafa Sarinanto, Yoji Yamaguchi, Kazuo Tsutsui. Study of thin ZnSe buffer layer for growth of GaAs on CaF2/Si(111) heterostructure, The 4th IUMRS Int. Conf. in Asia,, Sept. 1997.
• K. Uejima, K. Kawasaki, K. Tsutsui. Fabrication of Ga droplets array site-controlled by electron beam surface modification, The 9th Int. MicroProcess Conf., July 1996.

国内会議発表 (査読有り)

• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Magnetic property in sputtered MoS2 thin film on growth temperature, 第23回 半導体におけるスピン工学の基礎と応用（PASPS-23), Dec. 2018.
• 日野雅文, 吉田哲也, 小瀬村 大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋 厚志, 服部健雄, 岩井洋. SiN応力膜によるSi基板への歪記憶の検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2008.
• 日野雅文, 角嶋 邦之, パールハット アヘメト, 筒井 一生, 杉井 信之, 服部 健雄, 岩井 洋. HfO2/ La2O3のゲート絶縁膜を用いたSi-MOSFETの電気特性, 秋季第68回応用物理学会学術講演会, Nov. 2007.
• 小林勇介, 角嶋邦之, パールハット・アヘメト, V. R. ラオ, 筒井一生, 岩井洋. ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 880, Sept. 2007.
• 上村 英之, 足立 学, 角嶋 邦之, パールハット アヘメト, 筒井 一生, 杉井 信之, 服部 健雄, 岩井 洋. HfO2/SiO2 界面へのSc2O3 添加によるフラットバンド電圧シフト, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 820, Sept. 2007.
• 岡本晃一, 足立学, 角嶋邦之, パールハット・アヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. HfO2/Si 界面へのLa2O3 サブモノレイヤー添加による電気特性の変化, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 820, Sept. 2007.
• 宋在烈, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. La2O3/Ge MIS 構造における微量Si 界面層導入による電気特性の変化, 秋季第68回応用物理学会学術講演会, Sept. 2007.
• 藤澤 宏樹, 舘 喜一, 角嶋 邦之, パールハット・アヘメト, 筒井 一生, 杉井 信之, 服部 健雄, 岩井 洋. Alキャップ層がW/La2O3/Si MOS構造の電気特性に及ぼす影響, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 821, Sept. 2007.
• 幸田みゆき, 川那子高暢, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Sc2O3ゲート絶縁膜のリーク電流機構の解析, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会 講演予稿集, pp. 820, Sept. 2007.
• 佐藤創志, 舘喜一, 宋在烈, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. ラジカル窒化によるLa_2O3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）, 電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス, 電子情報通信学会, Vol. 107, No. 85, pp. 71-74, May 2007.
• 小林勇介, 筒井一生, 角嶋邦之, V. Hariharan, V.R. Rao, パールハットアヘメト, 岩井洋. FinFETのSpacer領域形状変化のデバイス特性への影響, 春季第54回応用物理学会学術講演会, 春季第54回応用物理学会学術講演会予稿集, 応用物理学会, No. 02, pp. 924, Mar. 2007.

国際会議発表 (査読なし・不明)

• H. Nishida, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. A simulation study on the transient leakage current analysis of a GaN epitaxial layer, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• "Atsuhiro Ohta, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima". Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• A. Miyata, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• "Kazuto Mizutani, Yu-Wei Lin, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima". Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Y.-W. Lin, K. Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y.-F. Tsao, T.-J. Huang, H.-T. Hsu, K. Kakushima. Ferroelectric HfO2 Capacitors for Varctor Application in GHz, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• K. Tsutsui, K. Natori, T. Ogawa, T. Muro, T. Matsuishita, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, K. Hayashi, F. Matsui, T. Kinoshita. Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• Takuya Hamada, Shinpei Yamaguchi, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• Yuki Kanazawa, Yohei Fukumoto, Syouichi Uechi, Kenji Ohoyama, Naohisa Happo, Masahide Harada, Kenichi Oikawa, Yasuhiro Inamura, Kazuo Tsutsui, Kouichi Hayashi. Quantitative investigation of local structure of heavy doped Si by neutron atomic resolution holography, The 4th international Symposium of Quantum Beam Science at Ibaraki University, Oct. 2019.
• K. Hisatsune, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, K. Kakushima. Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors, 235th ECS Meeting, May 2019.
• K. Sasaki, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer, 235th ECS Meeting, May 2019.
• J. Molina, H. Iwatsuka, T. Hoshii, S. Ohmi, H. Funakubo, A. Hori, I. Fujiwara, H. Wakabayashi, K. Tsutsui, K. Kakushima. Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode, 235th ECS Meeting, May 2019.
• Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Kazuo Tsutsui. Electrical properties of selectively grown GaN channel for FinFETs, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.
• Takuya Hoshii, Shuma Tsuruta, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.
• Tomohiro Matsushita, Takayuki Muro, Toyohiko Kinoshita, Fumihiko Matsui, Hiroshi Daimon, Naohisa Happo, Sinya Hosokokawa, Kenji Ohoyama, Kazuo Tsutsui, Takayoshi Yokoya, Kouichi Hayashi. Three-dimensional atomic imaging of dopants using atomic resolution holography, 14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14), Oct. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography, International Conference on Solid-State Devices and Materials (SSDM2018), Sept. 2018.
• D. Saito, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Reliability of SiC Schottky Diodes with Mo2C Electrode, ECS Meeting, May 2018.
• C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3, ECS Meeting, May 2018.
• H. Kataoka, H. Iwai, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. A Defect Density Profile Extraction Method for GaN Epi-Wafers, ECS Meeting, Apr. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique, Intnational Workshop on Junction Technology (IWJT2018), Mar. 2018.
• K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. 3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat), ASICON2017, Proceedings of International Conference on ASIC, Vol. 2017-October, pp. 1137-1140, Oct. 2017.  公式リンク  
  
• Yusuke Takei, Tomohiro Shimoda, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai. Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns, 2015 Material Research Society (MRS) Fall Meeting, Nov. 2015.
• Shunsuke Kubota, Rei Kayanuma, Akira Nakajima, Shin-ichi Nishizawa, Shin-ichi Nishizawa, Hiromichi Ohashi, Hitoshi Wakabayashi, Kazuo Tsutsui. P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation, 2015 Material Research Society (MRS) Fall Meeting, Nov. 2015.
• K. Tsutsui. GaN based power transistors: Proposals for low-loss operations, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• K. Terayama, A. Nakajima, S. Nishizawa, H. Ohasi, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai. Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Kamiya, Y. Takei, W. Saito, K. Kakushima, H. Wakabayashi, Y. Kataoka, K. Tsutsui, H. Iwai. Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• T. Kato, T.Inamura, A.Sasaki, K.Aoki, K.Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Thickness-dependent electrical characterization of β‐FeSi2, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Minjae Yoon, K. Terayama, A. Nakajima, S. Nichizawa, H. Ohasi, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai. Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Motoki, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama, Feb. 2014.
• Y. Ito, H. Hori, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y.Kataoka, A.Nishiyama, N. Sugii, K. Natori, H. Iwai. Proposal of junction formation process for solar cells made of silicon microstructures, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• H. Hasegawa, Y.Wu, J.Song, K. Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Y. Nakamura, K. Kakushima, Y. Kataoka, A. Nishiyama, H. Wakabayashi, N. Sugii, K. Tsutsui, K. Natori, H. Iwai. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics: WIMNACT, Feb. 2014.
• M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• 雷 一鳴, Shu Munekiyo, Kuniyuki KAKUSHIMA, Takamasa Kawanago, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, M. Furuhashi, N. Miura, S. Yamakawa. Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• 関拓也, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111), The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, Akira Nishiyama, Nobuyuki Sugii, 片岡好則, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Effect of pretreatment for high-/k//InGaAs interface property, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Taichi Inamura, Takafumi Katou, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on silicide semiconductors for high efficiency thin film photovoltaic devices, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Jiangning Chen, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, 齋藤渉. Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• wei li, 佐々木亮人, 大図秀行, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, HIROSHI IWAI. Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• unknown unknown, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, 大毛利健治, T. Watanabe, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, Keisaku Yamada, HIROSHI IWAI. Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY, 2014.
• Mari Okamoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiS, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014.
• 中島 昭, Hiroaki Yonezawa, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, 西澤伸一, 大橋弘通, Hitoshi Wakabayashi, HIROSHI IWAI. One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors, The 26th International Symposium on Power Semiconductor Devices and ICs(ISPSD 2014), 2014.
• Takumi Ohashi, Hitoshi Wakabayashi, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, KAZUO TSUTSUI, HIROSHI IWAI. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hayato Hori, Yuuma Itou, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Effects of substrate back bias on solar cells formed on thin SOI structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Sin Man, Rei Kayanuma, Yusuke Takei, T. Takahashi, M. Shimizu, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Kazuma Terayama, 中島 昭, 西澤伸一, 大橋弘通, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. Caluculation of ultimate on-resistance in GaN lateral HFETs using device simulation, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroaki Yonezawa, Rei Kayanuma, 中島 昭, 西澤伸一, 大橋弘通, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, HIROSHI IWAI. AlGaN/GaN-based p-channel HFETs with wide-operating temperature, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yuuma Itou, Hayato Hori, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Schottky barrier height reduction process for silicide/Si interfaces, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yusuke Takei, Mari Okamoto, S. Man, Ryosuke Kayanuma, Masayuki Kamiya, 齋藤渉, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT, 2014.
• Yoshihiro Matsukawa, Mari Okamoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Takafumi Katou, Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristic of b-FeSi2, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroki Hasegawa, Y. Wu, 宋 禛漢, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Tomoya Shoji, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroaki Imamura, Taichi Inamura, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films, J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• 吉原亮, Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Interface control process toward un-pinned metal/germanium Schottky contact, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kenji Natori, takeo hattori, HIROSHI IWAI. Atomically flat interface of La-silicate/Si with W2C gate electrodes, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, 杉井信之, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 87-91, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 385-389, Oct. 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 61-64, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET, 41st European Solid-State Device Research Conference, 2013.
• 小山将央, Naoto Shigemori, Kenji Ozawa, Kiichi Tachi, Kuniyuki KAKUSHIMA, O. Nakatsuka, 大毛利健治, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source, 41st European Solid-State Device Research Conference, 2013.
• Kuniyuki KAKUSHIMA, Jun Kanehara, takeo hattori, KAZUO TSUTSUI, HIROSHI IWAI. Boron depth profile of a plasma immersed substrate by XPS analysis, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, KENJI NATORI, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, [G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• マイマイティ マイマイティレャアティ, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• unknown unknown, A. Ablimit, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electron transport in ballistic diodes: influence of phonon generation in drain region, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• DARYOUSH ZADEH, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of metal Schottky junction for InGaAs substrate, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• K.Tuokedaerhan, 金田翼, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of annealing ambient for La2O3/Si capacitor, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 来山大祐, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. [Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Ryuji Hosoi, Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive switching properties of Ce oxides, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel Ni silicidation technology for Schottky diode formation, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent phonon limited electron mobility of Si nanowire, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kazuki Matsumoto, 小山将央, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si fin and nanowire structures, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Jun Kanehara, Yusuke Takei, Youhei Miyata, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kouhei Akita, Jun Kanehara, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. [517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Tasuku Kaneda, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 157-164, 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, 中塚理, パールハットアヘメト, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100), 15th International Conference on Thin Films, 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure, 15th International Conference on Thin Films, 2013.
• Yuya Suzuki, ダリューシュザデ, Ryuji Hosoi, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation, 15th International Conference on Thin Films, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, Miranda Enrique, takeo hattori, HIROSHI IWAI. Influence electrode materials on CeOx based resistive switching, CSTIC 2012, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Wei Li, 中島一裕, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Interface State Density of 3-dimensional Si channel, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Transient Switching Characteristics of Ce-oxide Resistive Switching Devices, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuya Suzuki, ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface controlled metal contact for n-type diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Stacked Ni-Silicidation Process for Schottky Barrier FET, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent resistivity change of Ni-silicides in nano-region, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Infrared absorption study of La-silicate gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Surface Treatments for Metal Contact on p-type Diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Novel Ohmic Contact Process for n-Ge Substrates, R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 宋 禛漢, 小山将央, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 中塚理, 大毛利健治, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Atomically flat Ni-silicide/Si interface using NiSi2 sputtering, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Mari Okamoto, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), February 18, 2013, , Japan, 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. International Symposium on Next-Generation Electronics(ISNE 2013), International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. Interface State Density of Passivation/Nanowire Interface, The 1st International Symposium on Nano-Wire Si Solar Cells/ MEXT “FUTURE-PV Innovation” Project, 2013.
• Kuniyuki KAKUSHIMA, 吉原亮, KAZUO TSUTSUI, HIROSHI IWAI. A Low Temperature Ohmic Contact Process for n-type Ge Substrates, 2013 13th International Workshop on Junction Technology(IWJT2013), 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 9, pp. 217-221, 2012.
• Tohtarhan Kamal, R. Tan, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 281-284, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure, ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,, ECS Transactions, Vol. 50, No. 3, pp. 447-450, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive swirching properties of Ce oxides, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, [550] K. Nakajima, W. Li, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Interface state density measurements of 3D silicon channel by charge pumping method”, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Daisuke Kitayama, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• K. Tuokedaerhan, Tasuku Kaneda, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Annealing Ambient for La2O3/Si Capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by conductance method, Interface state density measurements of 3D silicon channel by conductance method, 2012.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• DARYOUSH ZADEH, Ryuji Hosoi, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Characterization and improvement of high-k/InGaAs devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Heat Generation within Drain Region on Transport of Hot Electrons, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• マイマイティ マイマイティレャアティ, 関拓也, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kuniyuki KAKUSHIMA, Jun Kanehara, takeo hattori, KAZUO TSUTSUI, HIROSHI IWAI. Boron depth profile of a plasma immersed substrate by XPS analysis, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates, CSTIC 2012, 2012.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Wei Li, 中島一裕, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method, CSTIC 2012, 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Y. Izumi, T. Muro, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures, 2012 12th International Workshop on Junction Technology(IWJT2012), 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Kuniyuki KAKUSHIMA, Yuta Tamura, 吉原亮, KAZUO TSUTSUI, HIROSHI IWAI. Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability, K. Kakushima, Y. Tamura, R. Yoshihara, K. Tsutsui, H. Iwai, 2012.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process, ECS 222nd Meeting, ECS Transactions, 2012.
• Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 145-150, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 119-124, 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics, ECS 220th Meeting,ECS Transactions, ECS Transactions, Vol. 41, No. 7, pp. 119-124, 2011.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, Tsukuba Nanotechnology Symposium(TNS’11), 2011.
• C. Dou, 向井 弘樹, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure, 219th ECS Meeting, 2011.
• Ahmet Parhat, 来山大祐, 金田翼, 鈴木 拓也, Tomotsune Koyanagi, Miyuki Kouda, マイマイティ マイマイティレャアティ, Takamasa Kawanago, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks, ,219th ECS Meeting, 2011.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation, CSTIC2011, 2011.
• Takashi Kanda, ダリューシュザデ, Y. C. Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y. Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors, CSTIC2011, 2011.
• 来山大祐, 久保田 透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, HIROSHI IWAI. Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 金田翼, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effect of rare earth oxide capping for La-based gate oxides, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Takamasa Kawanago, 鈴木 拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. An effective process for oxygen defect suppression for La-based oxide gate dielectric, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 小山将央, Naoto Shigemori, Hideaki Arai, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Lateral encroachment of Ni silicide into silicon nanowire, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. An effective suppression process for Ni silicide enchroachment into Si nanowire, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• ダリューシュザデ, Takashi Kanda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, 来山大祐, Miyuki Kouda, Jaeyeol Song, Takamasa Kawanago, M. Mamatrishat, Kiichi Tachi, M. K. Bera, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, Keisaku Yamada, HIROSHI IWAI. Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability, 2010 Symposium on VLSI Technology, June 2010.
• Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. La-based oxides for High-k Gate Dielectric Application, 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), 2006 8th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, pp. 408-411, Oct. 2006.
• K. Nagahiro, K. Tsutsui, T. Shiozawa, R. Xiang, P. Ahmet, K. Kakushima, Y. Okuno, M. Matsumoto, M. Kubota, H. Iwai. Thermal Stability of NiSi Controlled by Post Silicidation Metal Doping Method, 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), 2006 8th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, pp. 466-468, Oct. 2006.
• Kazuo Tsutsui, So Watanabe, Motoki Maeda, Tsuyoshi Sugisaki, Yohei Toriumi. Resonant Tunneling Diodes on Si Substrates Using Fluoride Heterostructures and Feasibility of Application to Integrated Circuits, 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), 2006 8th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, pp. 1058-1061, Oct. 2006.
• Kazuo Tsutsui, So Watanabe, Tsuyoshi Sugisaki, Yohei Toriumi, Motoki Maeda. Fluoride Resonant Tunneling Diodes using Lattice-Matched Buffer Layers on Si Substrates, 34th European Solid-State Device Research Conference (ESSDERC2006), ESSDERC2006, pp. 439-442, Sept. 2006.
• Kazuo Tsutsui, So Watanabe, Tsuyoshi Sugisaki, Yohei Toriumi, Motoki Maeda. Resonant Tunneling Diodes Formed by Fluoride Heterostructures for Co-Integration with CMOS Devices, 2006 IEEE Silicon Nanoelectronics Workshop, 2006 IEEE Silicon Nanoelectronics Workshop, pp. 45-46, June 2006.
• Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai. Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi₂, The 6th International Workshop on Junction Technology (IWJT2006), Ext. Abstract of The 6th International Workshop on Junction Technology, pp. 188-191, May 2006.
• Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Kazuo Tsusui, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai. Irregular Increase in Sheet Resistance of Ni Silicides at Transition Temperature Range from NiSi to NiSi₂ Depending on Annealing Time, ECS-ISTC2006, Semiconductor Technology (ISTC2006), The Electrochemical Society Inc., Vol. 2006-3, pp. 253-257, Mar. 2006.
• Kazuo Tsutsui, Yuichiro Sasaki, Cheng-Guo Jin, Hideki Tamura, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Hendriansyah Sauddin, Kenta Majima, Takahisa Satoh, Yotaro Fukagawa, Kuniyuki Kakushima, Hiroshi Iwai. Formation of Ultra-Shallow Junctions by Plasma Doping, ECS-ISTC2006, Semiconductor Technology (ISTC2006) The Electrochemical Society Inc., Vol. 2006-3, pp. 232-241, Mar. 2006.
• Issui Aiba, Cheng-Guo Jin, Yuichiro Sasaki, Kazuo Tsutsui, Hideki Tamura, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai. Photo Resist Removal Process Using Wet Treatment after Plasma Doping, ECS-ISTC2006, Semiconductor Technology (ISTC2006), The Electrochemical Society Inc., Vol. 2006-3, pp. 295-296, Mar. 2006.
• So Watanabe, Yohei Toriumi, Motoki Maeda Tsuyoshi Sugisaki, Kazuo Tsutsui. Fluoride Resonant Tunneling Diodes on Si Substrates, 2005 International Semiconductor Device Research Symposium, Proc. of 2005 International Semiconductor Device Research Symposium, pp. TP3-05, Dec. 2005.
• So Watanabe, Tsuyoshi Sugisaki, Yohei Toriumi, Motoki Maeda, Kazuo Tsutsui. Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates, 2005 Int. Conf. on Solid State Devices and Materials, Ext. Abs. of 2005 Int. Conf. on Solid State Devices and Materials, pp. 160-161, Sept. 2005.
• Motoki Maeda, Natsuko Matsudo, So Watanabe, Kazuo Tsutsui. Study on crystalline structure of Ca_xMg_1-xF₂ alloy composed of cubic fluorite CaF₂ and tetragonal rutile MgF₂ on Si, 13th International Congress on Thin Films, Abstract book of 13th International Congress on Thin Films, pp. 44, June 2005.
• Natsuko Matsudo, Motoki Maeda, So Watanabe, Kazuo Tsutsui. Epitaxial Growth of Ca_xMg_1-xF₂ Alloy for Fluoride Ultra-Thin Heterostructures on Si Substrates, 47th Annual TMS Electronic Materials Conference, Abstract of 47th Annual TMS Electronic Materials Conference, pp. 105, June 2005.
• H. Sauddin, H. Tamura, K. Okashita, Y. Sasaki, H. Ito, B. Mizuno, K. Kakushima, K. Tsutsui, H. Iwai. Reverse Current of Plasma Doped p⁺ /n Ultra-Shallow Junction, 5th International Workshop on Junction Technology (IWJT2005), Ext. Abs. of 5th International Workshop on Junction Technology, pp. 75-78, June 2005.
• K. Tsutsui, K. Majima, Y. Fukagawa, Y. Sasaki, K. Okashita, H. Tamura, K. Kakushima, H. Ito, B. Mizuno, H. Iwai. Analysis of Conductivity in Ultra-shallow p⁺ Layers Formed by Plasma Doping, 5th International Workshop on Junction Technology (IWJT2005), Ext. Abs. of 5th International Workshop on Junction Technology, pp. 73-74, June 2005.
• I. Aiba, Y. Sasaki, K. Okashita, H. Tamura, Y. Fukagawa, K. Tsutsui, H. Ito, K. Kakushima, B. Mizuno, H. Iwai. Feasibility Study of Plasma Doping on Si Substrates with Photo-Resist Patterns, 5th International Workshop on Junction Technology (IWJT2005), Ext. Abs. of 5th International Workshop on Junction Technology, pp. 71-72, June 2005.
• Patrick Le Maitre, Toshiaki Terayama, Kazuo Tsutsui. Simulation of an SRAM cell using co-integration of fluoride-based resonant tunneling diodes and Si- MOSFET, 2001 Silicon Nanoelectronics Workshop, June 2001.
• Koji Kawasaki, Daisuke Yamazaki, Kazuo Tsutsui, Yoshinobu Aoyagi. Control of formation sites of self-assembling GaN dots by focused electron beam exposure, 1999 Mat. Res. Soc. Fall Meeting, Nov. 1999.

国内会議発表 (査読なし・不明)

• 今井 慎也, 梶川 亮介, 川那子 高暢, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 梶川 亮介, 川那子 高暢, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 濱田 昌也, 松浦 賢太朗, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact, 第70回応用物理学会春季学術講演会, Mar. 2023.
• Peilong Wang, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs, 70th JSAP Spring meeting, Mar. 2023.
• 宗田 伊理也, 白倉 孝典, ファム ナムハイ, 角嶋 邦之, 筒井 一生, 若林 整. 強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 立松 真一, 濱田 昌也, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. アニール処理によるWS2-Niエッジコンタクト特性の向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 小野 凌, 今井 慎也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 今井 慎也, 小野 凌, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. MoS2膜質のスパッタ成膜レート依存性調査, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 水谷 一翔, 星井 拓也, 川那子 高暢, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 宗田 伊理也, 白倉 孝典, PHAM NAM HAI, 角嶋 邦之, 筒井 一生, 若林 整. Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS2, 第63回フラーレン・ナノチューブ･グラフェン総合シンポジウム, Aug. 2022.
• 阿野 響太郎, 星井 拓也, 若林 整, 筒井 一生, 依田 孝, 角嶋 邦之. ゲート付きSiC pnダイオードの電気特性評価, 第83回応用物理学会秋季学術講演会, Aug. 2022.
• 宗田 伊理也, 白倉 孝典, ファム ナム ハイ, 角嶋 邦之, 筒井 一生, 若林 整. 二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調, 2022年第69回応用物理学会春季学術講演会, Mar. 2022.
• 小森 勇太, 木村 安希, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性, 第82回応用物理学会秋季学術講演会, Sept. 2021.
• 小森 勇太, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性, 第69回応用物理学会春季学術講演会, Sept. 2021.
• 竹内走一郎, 古賀峻丞, 田中晶貴, 孫澤旭, 橋本由介, 星井拓也, 筒井一生, 松下智裕. AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析, 日本物理学会第76回年次大会, Mar. 2021.
• 筒井一生, 濱田拓也, 高山 研, 金 相佑, 星井拓也, 角嶋邦之, 若林 整, 高橋言緒, 井手利英, 清水三聡. 選択成長法を用いたGaN 系FinFET, 電気学会電子デバイス研究会, Mar. 2021.
• 筒井 一生, 松橋 泰平, 星井 拓也, 角嶋 邦之, 若林 整, 永山 勉, 樋口 隆弘, 加藤 慎一, 谷村 英昭, 室 隆桂之, 松下 智裕, 森川 良忠. AsおよびBの共ドープによるSi中Asクラスターの特性制御, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 久恒 悠介, 金 相佑, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. 横型GaN FinFETの構造最適化についての検討, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 松田 和典, 生田 壮馬, 中谷 友哉, 長岡 史郎, 筒井 一生. Geのピエゾ抵抗効果（㈵）, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 木村 安希, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 門 龍翔, 横川 凌, 沼沢 陽一郎, 筒井 一生, 角嶋 邦之, 小椋 厚志. Si-IGBT作製プロセスにおける水素熱処理の影響, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 高山 研, 太田 貴士, 佐々木 満孝, 向井 勇人, 濱田 拓也, 高橋 言雄, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 木村 安希, 星井 拓也, 宮野 清孝, 布上 真也, 名古 肇, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 松橋 泰平, 星井 拓也, 沖田 寛昌, 中島 昭, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板における2DEG枯渇電圧の解析的導出, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 松浦 賢太朗, 濱田 昌也, 濱田 拓也, 谷川 晴紀, 坂本 拓朗, 堀 敦, 宗田 伊理也, 川那子 高暢, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 渡辺正裕, 執行直之, 星井拓也, 古川和由, 角嶋邦之, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内 潔, 宗田伊里也, 若林 整, 中島 昭, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋. トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション, 電子情報通信学会 SDM(シリコン材料・デバイス)研究会, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 273, pp. 45-48, Nov. 2019.
• 高山 研, 向井 勇人, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三総, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. GaN Fin構造選択成長における低抵抗領域の発生原因の検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 沖田 寛昌, 星井 拓也, 松橋 泰平, Sanyal Indraneel, Chen Yu-Chih, Ju Ying-Hao, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, Chyi Jen-Inn, 筒井 一生. TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing, The 80th JSAP Autumn meeting, Sept. 2019.
• 宋 ジンハン, 太田 惇丈, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 山岸 朋彦, 堀 敦, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 草深 一樹, Sunglin Tsai, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. スパッタリングによって形成したAlScN膜のリーク電流の評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 太田 惇丈, 宋 禛漢, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. 原子層堆積法を用いたイットリウムシリケート薄膜の形成, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 西田 宗史, 星井 拓也, 片岡 寛明, 筒井 一生, 角嶋 邦之, 若林 整. ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 宮田 篤希, 齋藤 大樹, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. 4H-SiCエピタキシャル層によるX線検出に関する検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 神林 郁哉, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. Si(111)基板上GaNのためのMgF2バッファの検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 蔡 松霖, 草深 一樹, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. スパッタリングを用いたAlScN膜の形成, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 昌也, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 堀口 大河, 濱田 拓也, 辰巳 哲也, 冨谷 茂隆, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 木村 安希, 久永 真之佑, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 谷川 晴紀, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. 正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 五十嵐 智, 望月 祐輔, 谷川 晴紀, 濱田 昌也, 松浦 賢太朗, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 今井 慎也, 濱田 昌也, 五十嵐 智, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 硫化プロセスにおけるスパッタMoS2膜質向上の重要性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 松橋 泰平, 星井 拓也, 沖田 寛昌, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, 中島 昭, 角嶋 邦之, 若林 整, Jen-Inn Chyi, 筒井 一生. TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 拓也, 堀口 大河, 辰巳 哲也, 冨谷 茂隆, 濱田 昌也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 向井 勇人, 髙山 研, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 選択成長法を用いたGaN FinFETの作製, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 井上 毅哉, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, 角嶋邦之, 星井 拓也, 古川 和由, 渡辺正裕, 執行 直之, 筒井一生, 岩井洋, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通, 平本 俊郎. 5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス), 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 118, No. 429, pp. 39-44, Aug. 2019.
• 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価, 日本結晶成長学会ナノエピ分科会 第11回ナノ構造・エピタキシャル成長講演会, June 2019.
• 筒井一生, 松下 智裕, 名取 鼓太郞, 小川 達博, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋邦之, 若林整, 林 好一, 松井 文彦, 木下 豊彦. 光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 96, pp. 23-27, June 2019.
• 濱田 拓也, 向井 勇人, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井 一生, 松下 智裕, 名取 鼓太郞, 小川 達博, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 谷川 晴紀, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井 一生, 松下 智裕, 名取 鼓太郞, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井一生, 松下智裕, 室隆桂之, 森川良忠, 名取鼓太郎, 小川達博, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦. 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.
• 松浦賢太朗, 清水淳一, 外山真矢人, 大橋匠, 坂本拓朗, 宗田伊理也, 石原聖也, 角嶋邦之, 筒井一生, 小椋厚志, 若林整. 大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Growth temperature dependence of magnetic property of sputtered MoS2 thin film, The 79th JSAP Autumn meeting, Sept. 2018.
• 松浦 賢太朗, 清水 淳一, 外山 真矢人, 大橋 匠, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 小川 達博, 名取 鼓太郎, 星井 拓也, 仲武 昌史, 渡辺 義夫, 永山 勉, 樋口 隆弘, 加藤 慎一, 谷村 英昭, 角嶋 邦之, 若林 整, 筒井 一生. フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 谷川 晴紀, 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 向井 勇人, 濱田 拓也, 高橋 言緒, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 五十嵐 智, 松浦 賢太朗, 濱田 昌也, 谷川 晴紀, 坂本 拓朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 佐々木 杏民, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響, Sept. 2018.
• 佐々 康平, 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 酸化セリウムを挿入したMIMキャパシタの充放電特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 岩塚 春樹, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. Siを導入したHfO2のMIMキャパシタの容量特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 久永 真之佑, 渡部 拓巳, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 鶴田 脩真, 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 清水 孝, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. TMAHによる表面処理のp型GaN/金属コンタクト特性への影響, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 井上 毅哉, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 神林 郁哉, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 濱田拓也, 向井勇人, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第82回半導体・集積回路シンポジウム, Aug. 2018.
• 安重 英祐, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和, 第65回応用物理学会春季学術講演会, Mar. 2018.
• Zulkornain Bin Danial, 宗田 伊理也, 早川 直希, 角嶋 邦之, 筒井 一生, 若林 整. Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 坂本 拓朗, 大橋 匠, 松浦 賢太朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減, Mar. 2018.
• 大橋 匠, 坂本 拓朗, 松浦 賢太朗, 清水 淳一, 外山 真矢人, 石原 聖也, 日比野 祐介, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. Migration制御したスパッタリング法による2次元層状MoS2成膜, 第65回応用物理学会春季学術講演会, Mar. 2018.
• Chen-Yi Su, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3, 65th JSAP Spring meeting, Mar. 2018.
• 筒井一生, 角嶋邦之, 星井 拓也, 中島 昭, 西澤 伸一, 若林整, 宗田伊理也, 佐藤 克己, 末代 知子, 齋藤 渉, 更屋 拓哉, 伊藤 一夫, 福井 宗利, 鈴木 慎一, 小林 正治, 高倉 俊彦, 平本 俊郎, 小椋 厚志, 沼沢 陽一郎, 大村 一郎, 大橋 弘通, 岩井洋. 三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術), 電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 電気学会, Vol. 2017, No. 74, pp. 1-6, Nov. 2017.
• 篠原 健朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 早川直希, 宗田伊理也, 大橋匠, 松浦賢太朗, 清水淳一, 角嶋邦之, 筒井一生, 若林整. トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 外山 真矢人, 大橋 匠, 松浦 賢太朗, 清水 淳一, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 龍口 傑, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 岩井 洋, 角嶋 邦之. 横型Siナノウォール太陽電池の発電特性に関する検討, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 安重 英祐, 大橋 匠, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• Chunmeng Dou, Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• 小路智也, 伊藤勇磨, 堀隼人, 宮澤遼太, 嘉藤貴史, 角嶋邦之, 若林整, 筒井一生, 片岡好則, 岩井洋. Surface States, Potential and Interface Control for Si Nanowire PV, 文部科学省「革新的エネルギー研究開発拠点形成事業」第2回国際シンポジウム ナノワイヤー太陽電池 ～最先端の太陽電池研究で福島復興へ～, 2014.
• 神谷真行, 武井優典, 齋藤渉, 角嶋邦之, 若林整, 片岡好則, 筒井一生, 岩井洋. AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性, 第61回応用物理学会春季学術講演会, 2014.
• 伊藤勇磨, 堀隼人, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 微細Si構造を利用した太陽電池に適した接合プロセスの提案, 第61回応用物理学会春季学術講演会, 2014.
• 米澤宏昭, 萱沼怜, 中島 昭, 西澤伸一, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋. 広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET, 第61回応用物理学会春季学術講演会, 2014.
• 寺山一真, 中島 昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋. デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算, 第61回応用物理学会春季学術講演会, 2014.
• 堀隼人, 伊藤勇磨, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 薄膜SOI太陽電池の発電特性への基板バイアス効果, 第61回応用物理学会春季学術講演会, 2014.
• 武井優典, 岡本真里, マンシン, 萱沼怜, 神谷真行, 齋藤渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性, 第61回応用物理学会春季学術講演会, 2014.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性, 第61回応用物理学会春季学術講演会, 2014.
• Yoon Minjae, 寺山一真, 中島 昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋. デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証, 第61回応用物理学会春季学術講演会, 2014.
• 雷 一鳴, 宗清修, 角嶋邦之, 川那子高暢, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 古橋 壮之, 三浦 成久, 山川 聡. ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析, 第61回応用物理学会春季学術講演会, 2014.
• 劉 璞誠, 竇春萌, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 譚錫昊, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係, 第61回応用物理学会春季学術講演会（2014年3月17日～3月20日）, 2014.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Siナノワイヤー曲面における保護膜界面準位密度の研究, 第61回応用物理学会春季学術講演会, 2014.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 大橋弘通, 岩井洋, 齋藤渉. TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第61回応用物理学会春季学術講演会, 2014.
• 今村浩章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価, 第61回応用物理学会春季学術講演会, 2014.
• 吉原亮, 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子, 第61回応用物理学会春季学術講演会, 2014.
• 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現, 第61回応用物理学会春季学術講演会, 2014.
• 関拓也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響, 第61回応用物理学会春季学術講演会, 2014.
• 稲村太一, 嘉藤貴史, 佐々木亮人, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. β-FeSi2の抵抗率熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• LiWei, 佐々木亮人, 大図 秀行, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 単斜晶WO3薄膜抵抗率の熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• 陳江寧, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性, 第61回応用物理学会春季学術講演会, 2014.
• 呉研, 長谷川明紀, 角嶋邦之, 渡辺 孝信, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性, 第61回応用物理学会春季学術講演会, 2014.
• Tuokedaerhan Kamale, Shuhei Hosoda, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. W2Cゲート電極によるLa-silicate MOSFETの移動度改善, 第61回応用物理学会春季学術講演会, 2014.
• ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 大嶺洋, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 立体Si構造における局所的な界面準位密度の抽出, ゲートスタック研究会 ―材料・プロセス・評価の物理―（第19回研究会）, 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 石川昂, 小路智也, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた三次元Si構造の界面準位密度測定, 第74回応用物理学会秋季学術講演会, 2013.
• 米澤宏昭, 中島 昭, 西澤 伸一, 大橋 弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋. AlGaN/GaN系pチャンネルHFETの製作, 第74回応用物理学会秋季学術講演会, 2013.
• 武井優典, 神谷真行, 寺山一真, 米澤宏昭, 齋藤 渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 神谷真行, 寺山一真, 武井優典, 齋藤 渉, 角嶋邦之, 若林整, 片岡好則, 筒井一生, 岩井洋. AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性, 第74回応用物理学会秋季学術講演会, 2013.
• 大橋匠, 若林整, 角嶋邦之, 杉井信之, 西山彰, 片岡好則, 名取研二, 筒井一生, 岩井洋. 単層MoS2チャネルを用いたn-MOSFETの性能見積もり, [第74回応用物理学会秋季学術講演会, 2013.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 嘉藤貴史, 稲村太一, 佐々木 亮人, 青木 克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 劉 璞誠, 米澤宏昭, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. AlGaNのドライエッチングへのBcl3の影響に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 譚錫昊, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 元木雅章, 吉原亮, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 宗清修, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響, 第74回応用物理学会秋季学術講演会, 2013.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上, 第74回応用物理学会秋季学術講演会, 2013.
• 中村嘉基, 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 若林整, 杉井信之, 筒井一生, 名取研二, 岩井洋. W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価, 第74回応用物理学会秋季学術講演会, 2013.
• 小路智也, 石川昂, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定, 第74回応用物理学会秋季学術講演会, 2013.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第74回応用物理学会秋季学術講演会, 2013.
• 今村浩章, 稲村太一, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価, 第74回応用物理学会秋季学術講演会, 2013.
• 鹿国強, 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響, 第74回応用物理学会秋季学術講演会, 2013.
• 宋 禛漢, 松本一輝, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 服部健雄, 岩井洋. Niシリサイドナノワイヤ抵抗率のNi膜厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 鈴木佑哉, 細井隆司, ダリューシュザデ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析, 第72回応用物理学会学術講演会, 2011.
• 常石佳奈, 来山大祐, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性, 第72回応用物理学会学術講演会, 2011.
• 田村雄太, 角嶋邦之, 中塚 理, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響, 第72回応用物理学会学術講演会, 2011.
• 細田倫央, 李映勲, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 岩井洋. 矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性, 第72回応用物理学会学術講演会, 2011.
• 叶真一, MokhammadSholihul Hadi, 竇春萌, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性, 第72回応用物理学会学術講演会, 2011.
• Kamale Tuokedaerhan, 金田翼, マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響, 第72回応用物理学会学術講演会, 2011.
• 関 拓也, 来山大祐, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. High-k/Si 直接接合構造における界面準位の定量評価について, 第72回応用物理学会学術講演会, 2011.
• 田中 祐樹, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響, 第72回応用物理学会学術講演会, 2011.
• LiWei, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価, 第72回応用物理学会学術講演会, 2011.
• 吉原 亮, 角嶋邦之, パールハットアヘメト, 中塚理, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性, 第72回応用物理学会学術講演会, 2011.
• 金原潤, 宮田陽平, 秋田洸平, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, パールハットアヘメト, 角嶋邦之, 服部健雄, 岩井洋. Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布, 第72回応用物理学会学術講演会, 2011.
• 宮田陽平, 金原潤, 難波覚, 三角元力, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, 角嶋邦之, パールハットアヘメト, 服部健雄, 岩井洋. 軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析, 第72回応用物理学会学術講演会, 2011.
• 角嶋邦之, 金原潤, 筒井一生, 服部健雄, 岩井洋. 高濃度ボロンドープ飼料の角度分解X線光電子分光による濃度分布解析, 第72回応用物理学会学術講演会, 2011.
• 松本一輝, 小山将央, 呉研, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討, 第72回応用物理学会学術講演会, 2011.
• 田中正興, 金原潤, 宮田陽平, 角嶋邦之, パールハットアヘメト, 室隆桂之, 木下豊彦, 野平博司, 筒井一生, 室田 淳一, 服部健雄, 岩井洋. Siエピタキシャル層にドープされたボロンの軟X線光電子分光, 第７１回応用物理学会学術講演会, Sept. 2010.
• 竇 春萌, マイマイティ マイマイティレャアティ, ダリューシュザデ, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 呉研, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測, 第７１回応用物理学会学術講演会, Sept. 2010.
• 細井隆司, 神田高志, ダリューシュザデ, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. 絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 金田翼, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価, 第７１回応用物理学会学術講演会, Sept. 2010.
• 中島 一裕, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. チャージポンピング法による立体Si構造の界面準位密度の評価, 第７１回応用物理学会学術講演会, Sept. 2010.
• 小山 将央, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. 窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討, 第７１回応用物理学会学術講演会, Sept. 2010.
• マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 鈴木 拓也, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用, 第７１回応用物理学会学術講演会, Sept. 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果, 第７１回応用物理学会学術講演会, Sept. 2010.
• 角嶋邦之, 小柳友常, 来山大祐, 幸田みゆき, 宋在烈, 佐藤創志, 川那子高暢, M. マイマイティ, 舘喜一, M.K. Bera, パールハットアヘメト, 野平博司, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 山田啓作, 岩井洋. LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御, 応用物理学会分科会 シリコンテクノロジー, ，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）, No. 127, pp. 4-8, July 2010.
• 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討, 電子情報通信学会技術研究報告 pp.17-22, June 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討, 電子情報通信学会技術研究報告 pp.43-48, June 2010.
• 神田高志, 船水清永, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-141, Mar. 2010.
• 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-098, Mar. 2010.
• 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類酸化物をキャップすることによるMOSFETの電気特性の改善, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-097, Mar. 2010.
• 小澤健児, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3 MOSFETへのCeOxキャップによる電気特性の改善, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-096, Mar. 2010.
• ダリューシュ ザデ, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-095, Mar. 2010.
• 来山 大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-094, Mar. 2010.
• 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜中のSiナノワイヤへのNi拡散の制御, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-269, Mar. 2010.
• 田中正興, 星野憲文, 筒井一生, 野平博司, 室隆桂之, 加藤有香子, 木下豊彦, パールハットアヘメト, 角嶋邦之, 服部健雄, 岩井洋. 光電子分光により検出したSi中のAsおよびPの化学結合状態の評価, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-191, Mar. 2010.
• 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸素添加がWゲートMOSデバイスの電気特性に与える影響, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-151, Mar. 2010.
• 中島一裕, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Interface state density of 3-D structured Si using charge pumping method, 複合創造領域シンポジウム, 2010.
• 川那子高暢, 鈴木 拓也, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric, 複合創造領域シンポジウム, 2010.
• 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation, 複合創造領域シンポジウム, 2010.
• 金田翼, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Effect of Rare Earth Oxide Capping for La-based Gate Oxides, 複合創造領域シンポジウム, 2010.
• マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 岩井洋. Remote Coulomb and roughness scatterings in gate oxide scaling, 複合創造領域シンポジウム, 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling, 複合創造領域シンポジウム, 2010.
• 久保田透, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Spectroscopic analysis of interface state density in high-k/Si structure, 複合創造領域シンポジウム, 2010.
• ダリューシュザデ, 神田高志, 細井隆司, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As, 複合創造領域シンポジウム, 2010.
• 竇春萌, 向井弘樹, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Feasibility study of Ce oxide for resistive RAM application, 複合創造領域シンポジウム, 2010.
• 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation, 複合創造領域シンポジウム, 2010.
• AbudukelimuAbudureheman, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. The Effect of Scattering in Drain Region of Ballistic Channel Diode, 複合創造領域シンポジウム, 2010.
• 小山将央, 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Lateral encroachment of Ni silicide into Si nanowire, 複合創造領域シンポジウム, 2010.
• 呉研, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface, 複合創造領域シンポジウム, 2010.
• Hiroto Nakayama, Kuniyuki KAKUSHIMA, Ahmet Parhat, E.Ikenaga, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• A.Abudukelimu, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• M.Mamatrishat, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Wataru Hosoda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Katuya Matano, Kuniyuki KAKUSHIMA, Ahmet Parhat, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Threshold Voltage Control in p-MOSFET with High-k Gate dielectric, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Yusuke Kobayashi, Kuniyuki KAKUSHIMA, Ahmet Parhat, V.Ramgopal Rao, KAZUO TSUTSUI, HIROSHI IWAI. Short-channel effects on FinFETs induced by inappropriate fin widths, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Hideaki Arai, Hideyuki Kamimura, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Reaction for Ni Silicidation of Si Nanowire, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Kiyohisa Funamizu, Takashi Kanda, Y.C.Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• 船水清永, Yueh-Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, Edward Yi Chang, 服部健雄, 岩井洋. High-k ゲート絶縁膜を用いたInxGa1-xAs MOS構造の研究, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 837, July 2009.
• 岩井洋, 山田啓作, 大毛利健二, 筒井一生, 角嶋邦之, パールハットアヘメト, 佐藤創志, 上村英之, 新井英朗. トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 0, pp. 147, Mar. 2009.
• 岩井洋, 名取研二, 白石賢二, 山田啓作, 大毛利健二, 筒井一生, 角嶋邦之, パールハットアヘメト. シリコンナノワイヤFET研究の現状とロードマップ作成の考え方, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 0, pp. 155, Mar. 2009.
• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La2O3MOSデバイスへのSrO導入による電気特性の変化, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 細田亘, 野口浩平, パールハットアヘメト, 角嶋邦之, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用, 第56回応用物理学関係連合講演会, 第56回応用物理学会予稿集, 応用物理学会, No. 2, pp. 868, Mar. 2009.
• 宋在烈, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 840, Mar. 2009.
• 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 小林勇介, 角嶋邦之, パールハットアヘメト, V.R. Rao, 筒井一生, 岩井洋. FinFETの構造ばらつきによるオン電流のばらつきの検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 898, Mar. 2009.
• 星野憲文, 中川恭成, 野平博司, 室 隆桂之, 加藤 有香子, 甲斐隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 木下 豊彦, 筒井一生, 服部健雄, 岩井洋. 光電子分光によるSi中Asの化学結合状態評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2009.
• 中山寛人, 日野雅文, 永田晃基, 小瀬村大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋厚志, 服部健雄, 岩井洋. As注入とSiN応力膜によるpoly-Siへの歪記憶の検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 869, Mar. 2009.
• 又野克哉, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Ge層挿入によるLa2O3-MOSキャパシタのVFB制御, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 横田知之, 酒井一憲, パールハットアヘメト, 筒井一生, 岩井洋. 反復剥離法による3次元Fin構造中ドーピングプロファイル測定の提案, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 873, Mar. 2009.
• 新井英朗, 上村英之, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. SiナノワイヤへのNiシリサイド形成の評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 901, Mar. 2009.
• 佐藤創志, 上村英之, 新井英朗, 角嶋邦之, パールハットアヘメト, 大毛利健二, 筒井一生, 杉井信之, 服部健雄, 山田啓作, 岩井洋. 四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 901, Mar. 2009.
• 中山寛人, 日野雅文, 服部健雄, 杉井信之, 筒井一生, パールハットアヘメト, 角嶋邦之, 小椋厚志, 永田 晃基, 吉田 哲也, 小瀬村大亮, 岩井洋. Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 743, Sept. 2008.
• 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. La2O3/Si直接接合構造における界面特性の評価, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 702, Sept. 2008.
• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La203系MOSFETへのMg挿入による電気特性の変化, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 702, Sept. 2008.
• 新井英朗, 上村英之, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 服部健雄, 杉井信之, 岩井洋. 熱酸化によるSi ナノワイヤの作製とその電気特性, 秋季第69回応用物理学会学術講演会, 応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 768, Sept. 2008.
• 船水清永, 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 703, Sept. 2008.
• 小林勇介, 角嶋邦之, パールハットアヘメト, ラオ ラムゴパル, 筒井一生, 岩井洋. FinFETの閾値変動における短チャネル効果による影響の切り分け, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 753, Sept. 2008.
• 又野克哉, 野口 浩平, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 751, Sept. 2008.
• 細田亘, 野口浩平, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 751, Sept. 2008.
• 酒井一憲, 中川恭成, 横田知之, 金成国, 岡下勝己, 佐々木雄一朗, パールハットアヘメト, 角嶋邦之, 水野文二, 服部健雄, 筒井一生, 岩井洋. 3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 749, Sept. 2008.
• 佐藤創志, 上村英之, 新井英朗, 大毛利健二, 角嶋邦之, パールハットアヘメト, 筒井一生, 服部健雄, 杉井信之, 山田啓作, 岩井洋. Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 735, Sept. 2008.
• 中川恭成, 野平博司, 酒井一憲, 横田 知之, 甲斐 隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 服部健雄, 筒井一生, 岩井洋. 光電子分光によるSi中Asの活性化状態の深さ方向分布評価, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 738, Sept. 2008.
• 宋在烈, 舘喜一, 岡本晃一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 2, pp. 849, Mar. 2008.
• 岡本晃一, 舘喜一, 足立学, 佐藤創志, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会 予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.
• 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeO2/La2O3積層ゲート絶縁膜の電気特性評価, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 850, Mar. 2008.
• 野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Er層界面挿入によるNiシリサイドのショットキー障壁変調技術, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 879, Mar. 2008.
• パールハット アヘメト, 筒井一生, 角嶋邦之, 杉井 信之, 知京 豊裕, 服部健雄, 長田 貴弘, 岩井洋. 高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 0, pp. 896, Mar. 2008.
• 足立学, 岡本晃一, 舘喜一, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 上村英之, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 大毛利 健二, 服部健雄, 岩井洋. 熱酸化によるSiナノワイヤ形状の酸化条件依存性, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 913, Mar. 2008.
• 小林 勇介, 角嶋邦之, パールハットアヘメト, 筒井一生, V.R. Rao, 岩井洋. FinFETにおけるショートチャンネル効果のフィン幅依存症, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 925, Mar. 2008.
• 酒井一憲, 渡邉将光, 中川恭成, 金 成国, 岡下 勝己, 佐々木雄一朗, パールハットアヘメト, 角嶋邦之, 水野 文二, 服部健雄, 筒井一生, 岩井洋. 極浅接合プロファイリングのための反復犠牲酸化エッチング技術, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 900, Mar. 2008.
• 渡邉　聡, 三浦　圭, 斉藤格広, 前田元輝, 筒井一生. Ca_xCd_1-xF₂混晶バリアを用いた非対称弗化物共鳴トンネルダイオードの検討, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 3, pp. 1266, Aug. 2006.
• 角嶋邦之, アヘメトパールハット, 筒井一生, 岩井　洋. La₂O₃の次世代ゲート絶縁膜への応用, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 73, Aug. 2006.
• 齋藤格広, 前田元輝, 渡邉　聡, 筒井一生. 弗化物共鳴トンネルデバイス縦方向集積のためのCaF₂バッファ層ポスト酸化の検討, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 3, pp. 1266, Aug. 2006.
• 川那子高暢, 椎野泰洋, ヘンドリアンシャーサウッディン, 角嶋邦之, アヘメトパールハット, 筒井一生, 杉井信之, 服部健雄, 岩井　洋. Sc₂O₃ゲート絶縁膜を用いたMISFETの作製と特性評価, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 718, Aug. 2006.
• 佐藤創志, 舘　喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井　洋. La₂O₃膜電子ビーム蒸着時の酸素供給による熱安定性向上効果, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 718, Aug. 2006.
• 岡本晃一, 宋　在烈, 福山　享, 角嶋邦之, アヘメトパールハット, 杉井信之, 筒井一生, 服部健雄, 岩井　洋. La₂O₃ MIMキャパシタの電気特性の熱処理依存性, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 719, Aug. 2006.
• 濱島英孝, 渡邉　聡, 前田元輝, 筒井一生. Si基板上Sr_xCd_1-xF₂混晶の成長特性とその共鳴トンネルデバイスへの応用, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 3, pp. 1265, Aug. 2006.
• 小林勇介, Hariharan V., 角島邦之, 筒井一生, 岩井　洋, Rao V.R.. FinFETの寄生効果低減の為のゲート-ソース/ドレイン間素子形状の最適化, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 800, Aug. 2006.
• 足立　学, 永廣侯治, 塩澤崇史, パールハットアヘメト, 角嶋邦之, 筒井一生, 岩井　洋. 異種金属のPSMD(モノシリサイド形成後金属添加)法によるNiSiの耐熱性向上, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 774, Aug. 2006.
• 大石善久, 永廣侯治, 塩澤崇史, パールハットアヘメト, 角嶋邦之, 筒井一生, 岩井　洋. Al層界面挿入によるNi⁺-Si基板上Niシリサイドの耐熱性向上, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 773, Aug. 2006.
• 松田　徹, 野平博司, 池永英司, 小林勇介, 金　成国, 岡下勝巳, 佐々木雄一朗, 伊藤裕之, 角嶋邦之, 筒井一生, 水野文二, 岩井　洋, 服部健雄. プラズマドープしたボロンの化学結合形態とその深さ方向分布のSpike RTAによる変化, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 770, Aug. 2006.
• 両角康宏, 小林勇介, 角嶋邦之, アヘメトパールハット, 筒井一生, 杉井信之, 岩井　洋. High-k膜を用いた三次元トランジスタの数値解析, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会予稿集, Vol. 2, pp. 806, Aug. 2006.
• 塩澤崇史, 項　瑞飛, 永廣侯治, アヘメトパールハット, 角嶋邦之, 筒井一生, 岩井　洋, 奥野泰利, 松元道一, 久保田正文. NiSiからNiSi₂への相転移温度領域におけるシート抵抗増加特性の評価, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 911, Mar. 2006.
• 永廣侯治, 項　瑞飛, 塩澤崇史, パールハットアハメト, 角嶋邦之, 筒井一生, 岩井　洋, 奥野泰利, 松元道一, 久保田正文. Niシリサイド形成における異種金属積層添加効果の検討, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 911, Mar. 2006.
• 小林勇介, Hariharan Venkatnarayan, 角島邦之, 筒井一生, 岩井　洋, Rao Ramgopal. FinFETのゲート-ソース/ドレイン間寄生効果の素子形状依存性, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 934, Mar. 2006.
• 中川昌幸, 吉崎智史, 宋　在烈, 張　偉源, 奈良安雄, 安平光雄, 大塚文雄, 有門経敏, 中村邦雄, 角嶋邦之, パールハットアヘメト, 筒井一生, 青木　均, 岩井　洋. Sub-100 nm High-k MOSFETの高周波歪み特性, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 938, Mar. 2006.
• 齋藤格広, 前田元輝, 渡辺　聡, 筒井一生. Si基板上に縦方向集積した弗化物共鳴トンネルデバイスの研究, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 3, pp. 1482, Mar. 2006.
• 濱島英孝, 前田元輝, 渡邉　聡, 筒井一生. Si上弗化物共鳴トンネル素子におけるSr_xCd_1-xF₂混晶井戸層の提案, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 3, pp. 1482, Mar. 2006.
• 野平博司, 松田　徹, 舘　喜一, 椎野泰洋, 宋　在烈, 黒木裕介, ン　ジン アン, パールハットアヘメト, 角嶋邦之, 筒井一生, 池永英司, 小林啓介, 岩井　洋, 服部健雄. LaO_X/Si界面組成遷移層の熱安定性, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 833, Mar. 2006.
• 椎野泰洋, 中川健太郎, 角嶋邦之, パールハットアへメト, 杉井信之, 服部健雄, 筒井一生, 岩井　洋. La₂O₃/Sc₂O₃積層構造ゲート絶縁膜による耐熱性向上に関する検討, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 834, Mar. 2006.
• 舘　喜一, 黒木裕介, 黄　仁安, 角嶋邦之, パールハットアハメト, 筒井一生, 杉井信之, 服部健雄, 岩井　洋. La₂O₃-nMISFET電気特性の金属微量添加による効果, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 835, Mar. 2006.
• 宋　在烈, 福山　享, 角嶋邦之, アヘメトパールハット, 筒井一生, 杉井信之, 服部健雄, 岩井　洋. 熱処理におけるLa₂O₃/n-Ge(100)界面のXPS分析, 第53回応用物理学関係連合講演会, 第53回応用物理学関係連合講演会予稿集, Vol. 2, pp. 837, Mar. 2006.
• Sauddin Hendriansyah, 田村秀貴, 岡下勝己, 佐々木雄一朗, 伊藤裕之, 水野文二, 角嶋邦之, 筒井一生, 岩井洋. プラズマドーピング法で形成したメサ型p⁺/n接合の逆方向電流の評価, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 2, pp. 723, Sept. 2005.
• 大前譲治, 前田元輝, 杉崎剛, 渡邉聡, 筒井一生. 弗化物ヘテロデバイス集積化に向けたCdF₂分子線によるSi基板表面改質法, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1214, Sept. 2005.
• 松田徹, 野平博司, 池永英司, 相庭一穂, 深川洋太郎, 田村英貴, 岡下勝巳, 金成国, 佐々木雄一朗, 伊藤裕之, 角嶋邦之, 筒井一生, 水野文二, 岩井洋, 服部健雄. シリコン表面近傍にプラズマドープしたボロン原子の化学結合状態, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 2, pp. 723, Sept. 2005.
• 松土夏子, 前田元輝, 渡邉聡, 筒井一生. Si基板上エピタキシャルCa_xMg_1-xF₂混晶超薄膜の電気的特性, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1213, Sept. 2005.
• 杉崎剛, 渡辺聡, 前田元輝, 筒井一生. Si(100)基板V溝上の弗化物混晶系共鳴トンネルダイオードの作製, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1213, Sept. 2005.
• 斎藤格広, 渡邉聡, 前田元輝, 筒井一生. 弗化物多層構造による縦方向集積共鳴トンネルデバイスの製作, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 3, pp. 1213, Sept. 2005.
• 深川洋太郎, 相庭一穂, 小林勇介, 田村秀貴, 岡下勝己, 佐々木雄一朗, 水野文二, 筒井一生, 角嶋邦之, 岩井洋. プラズマドーピングで形成したp⁺層の極浅化に伴う電気伝導特性の変化, 第66回応用物理学会学術連合講演会, 第66回応用物理学会学術連合講演会予稿集, Vol. 2, pp. 723, Sept. 2005.
• F. Hirabayashi, S. Yamada, KOJI KAWASAKI, K. Tsutsui. Dot arrays fabricated by electron beam site control method and its application to single electron devices, Dot arrays fabricated by electron beam site control method and its application to single electron devices, Sept. 2000.

その他の論文・著書など

• 筒井一生. Si基板上のフッ化物共鳴トンネルダイオード, 応用物理, vol. 78, no. 5, pp. 432-436, May 2009.
• 筒井 一生. 弗化物共鳴トンネル素子とそのCMOS集積化への展望, 電子情報通信学会誌, vol. 91, no. 2, pp. 1642-1645, Feb. 2008.

特許など

• 星井拓也, 筒井一生. ｐチャネルＧａＮＭＯＳデバイス及びその製造方法. 特許. 公開. 国立大学法人東京工業大学. 2021/08/25. 特願2021-137005. 2023/03/09. 特開2023-031488. 2023.
• AHMETPARHAT, マイマイティ マイマイティレシャティ, 岩井洋, 服部健雄, 筒井一生, 角嶋邦之. 半導体素子. 特許. 公開. 国立大学法人東京工業大学. 2011/12/27. 特願2011-285538. 2013/07/08. 特開2013-135135. 2013.
• Parhat　AHMET, 岩井洋, 筒井一生, 角嶋邦之, 服部　健雄, 知京　豊裕. 半導体装置及びコンデンサ. 特許. 公開. 国立大学法人東京工業大学, 独立行政法人 物質・材料研究機構. 2007/03/06. 特願2007-056151. 2008/09/18. 特開2008-218827. 2008.
• 岩井洋, 筒井一生, Parhat　AHMET, 角嶋邦之, 松元　道一, 奥野　泰利, 久保田　正文, 上田　誠二. 半導体装置及びその製造方法. 特許. 公開. 国立大学法人東京工業大学, 松下電器産業　株式会社. 2006/05/30. 特願2006-149763. 2007/12/13. 特開2007-324187. 2007.
• 岩井洋, 筒井一生, 角嶋　邦之, 奥野　泰利, 松元　道一, 久保田　正文, 上田　誠二. 半導体装置及びその製造方法. 特許. 公開. 国立大学法人東京工業大学, 松下電器産業　株式会社. 2005/12/09. 特願2005-355808. 2007/06/07. 特開2007-142347. 2007.

学位論文

• アルカリ土類金属弗化物を用いた化合物半導体SOI構造のヘテロエピタキシーに関する研究,  本文,  Doctor of Engineering,  東京工業大学,  1986/--/--, 

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